S4291 Search Results

Contextual Info: Temic Silicon»:_ S.9939DY D ual E nhancem ent-M ode M O SFETs N- and P-Channel Product Summary V d s (V) rDS(on) ( ß ) I d (A) 0.05 @ VGS = 10 V ±3.5 0.07 @ VGs = 6 V ±3 0.08 @ VGs = 4.5 V ±2.5 0.10 @ VGs = - ±3.5 30 iov 0.12 @ VGS = —6V

S4291

Abstract: BSC094N03S JESD22 sth25
Contextual Info: BSC094N03S G OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 30 V R DS on ,max 9.4 mΩ ID 35 A 1) • Qualified according to JEDEC for target applications

Contextual Info: BSC094N03S G OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 30 V R DS on ,max 9.4 mΩ ID 35 A 1) • Qualified according to JEDEC for target applications

SI9945DY

Contextual Info: Tem ic Siliconix_ _ SÌ9945DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 60 •DS(on) ( ß ) I d (A) 0.10 @ V os = 10 V ±3.3 0.20 @ VGS = 4.5 V ±2.5 D2 d 2 V S O -8 ~8~| D, ~7~| D, ~6~| D2 o 2 l~ T ~ 5~l D2

si6956

Contextual Info: Tem ic siiiconix_SÌ6956DQ Dual N-Channel Enhancement-Mode MOSFET Product Summary V Ds V «•DS(on) ( Q ) I d (A ) 0.09 @ V GS = 10 V ± 2.5 0.175 @ V GS = 4.5 V ± 1.8 20 D, d2 o Q TSSOP-8 o2 ■ J5 s. S2 N-Channel M OSFET N-Channel M OSFET

Contextual Info: T e m ic siiicoiiix_ SÌ6542DQ Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS(V) FDSion) (Q) I d (A) N-Channel 20 P-Channel 20 0.09 @ VGs = 10 V 0.175 @ VGS = 4.5 V 0.17 @ VGS = - 10 V 0.32 @ VGS = -4.5 V ±2.5

2x58

Abstract: 4699 2x52
Contextual Info: O iûtUutâttZ 4699 O UTPUT PENTODE PENTHODE D E SORTIE ENDPENTHODE H ea t i n g C hauffage Hei z u n g kg3.m t ! indirect by A.C.j parallel supply Indirect par C.A.; a l i m e n tation en parallèle : indirekt durch Wechselstrom! P a r a l l e l speisung

Si9948DY

Contextual Info: Si9948DY Siliconix Dual PĆChannel EnhancementĆMode MOSFET Product Summary VDS V -60 rDS(on) (W) ID (A) 0.28 @ VGS = -10 V "2.0 0.50 @ VGS = -4.5 V "1.6 S1 S2 SOĆ8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View G1 G2 D1 D1 D2 D2 PĆChannel MOSFET PĆChannel MOSFET

Si9933DY

Contextual Info: Si9933DY Siliconix Dual PĆChannel EnhancementĆMode MOSFET Product Summary VDS V -20 rDS(on) (W) ID (A) 0.11 @ VGS = -4.5 V "3.4 0.15 @ VGS = -3.0 V "2.9 0.19 @ VGS = -2.7 V "2.6 S1 S2 SOĆ8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View G2 D1 D1 PĆChannel MOSFET

g2ns

Contextual Info: T e m ic sii.coni«_ SÌ9933DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V n>S(on> ( ß ) I d (A) -20 0.11 @ VGS = -4.5 V 0.15@ V g s = -3.0 V 0.19 @ VGs = -2.7 V ±3.4 ±2.9 ±2.6 Si Q S2 Q SO -8 XI D T~1 D XI D

Contextual Info: Tem ic siiiconix_ SÌ9925DY Dual N-Channel Enhancement-Mode MOSFET Product Summary 20 r D S on ( ^ ) I d (A) 0.05 @ VGs = 4.5 V ±5.0 0.06 @ VGS = 3.0 V ±4.2 0.08 @ VGS = 2.5 V ± 3.6 AS[ AJ\ V S O -8 s, [X ~ n D, G| [ T T 1 D,

S47D

Contextual Info: T e m ic siiiconix_ SÌ6447DQ P-Channel Enhancement-Mode MOSFET Product Summary VDS V *DS(on) (Œ) 0.09@ Vg s = -10 V 0.16 @ Vos = -4.5 V 20 I d (A) ±3.2 ±2.4 S' Q TSSOP-8 D d s [T su • SÌ6447DQ T| D 3 s T] s ‘ Source Pins 2, 3. 6 and 7

HA20

Contextual Info: Tem ic siiicoim_ SÌ9936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (ß ) 30 I d (A) 0.050 @ Vos = 10 V ±5.0 0.080 @ Vos = 4.5 V ±3.9 u D| SO-8 u D, D2 D2 «j i O Si Ô S2 N -C h an n el M O S F E T N -C h an n el M O S F E T

Si9925DY

Contextual Info: Si9925DY Siliconix Dual NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.05 @ VGS = 4.5 V "5.0 0.06 @ VGS = 3.0 V "4.2 0.08 @ VGS = 2.5 V "3.6 D1 D1 D2 D2 SOĆ8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 NĆChannel MOSFET

Si9936DY

Contextual Info: Si9936DY Siliconix Dual NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V "3.9 D1 D1 D2 D2 SOĆ8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View G2 S1 S2 NĆChannel MOSFET NĆChannel MOSFET

Si9959DY

Abstract: Si9945DY
Contextual Info: Si9959DY Siliconix Dual NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.30 @ VGS = 10 V "2.0 0.50 @ VGS = 5 V "0.6 For higher performance see Si9945DY D1 D1 D2 D2 SOĆ8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View

Contextual Info: BSC094N03S G OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 30 V R DS on ,max 9.4 mΩ ID 35 A 1) • Qualified according to JEDEC for target applications

Contextual Info: Tem ic siiiconix_SÌ6436DQ N-Channel Enhancement-Mode MOSFET Product Summary VD S V rDS(on) ( ß ) I d (A) 0.045 @ V q s = 10 V ± 4 .4 0.070 @ V GS = 4.5 V ± 3 .5 30 D O TSSOP-8 'S o u rc e Pins 2, 3, 6 a n d 7 m ust be tied com m on.

si6953

Contextual Info: Temic siiiconix_ SÌ6953DQ Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V 20 r DS(on> ( ß ) I d (A) 0.17 @ Vr,s = - 1 0 V ±1.9 0.32 @ Vo s = -4 .5 V ± 1.3 St O Si Q T S S O P -8 ° -ig ; Top View Ô D. P-Channel MOSFKT

si9928

Abstract: 13S8
Contextual Info: T e m ic siiiconix_ SÌ9928DY Dual Enhancement-Mode MOSFETs N- and P-Channel Product Summary V Ds ( V ) N -C hannel 20 P-Channel -2 0 r DS(on) (Q ) I d (A) 0.05 (a) VGs = 4.5 V ± 5 .0 0.06 C«’ V GS = 3.0 V ± 4 .2 0.08 <S) V q s = 2.7 V

Si9945DY

Contextual Info: Si9945DY Siliconix Dual NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.10 @ VGS = 10 V "3.3 0.20 @ VGS = 4.5 V "2.5 D1 D1 D2 D2 SOĆ8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View G2 S1 S2 NĆChannel MOSFET NĆChannel MOSFET

Si9435DY

Contextual Info: Si9435DY Siliconix PĆChannel EnhancementĆMode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.055 @ VGS = -10 V "5.1 0.07 @ VGS = -6 V "4.6 0.105 @ VGS = -4.5 V "3.6 -30 S S S SOĆ8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D Top View G D D D D PĆChannel MOSFET

Si9939DY

Contextual Info: Si9939DY Siliconix Dual EnhancementĆMode MOSFETs NĆ and PĆChannel Product Summary VDS (V) NĆChannel Ch l rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "3.5 0.07 @ VGS = 6 V "3 0.08 @ VGS = 4.5 V "2.5 0.10 @ VGS = -10 V "3.5 0.12 @ VGS = -6V "3 0.16 @ VGS = -4.5 V

94n03s

Contextual Info: BSC094N03S G OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 30 V R DS on ,max 9.4 mΩ ID 35 A 1) • Qualified according to JEDEC for target applications