S4116 Search Results

MOSFET driver 175C

Abstract: SUM110N04-04 S-41166
Contextual Info: SUM110N04-04 Vishay Siliconix N-Channel 40-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 40 0.0035 @ VGS = 10 V 110 a D TrenchFETr Power MOSFET D 175_C Junction Temperature APPLICATIONS D D Automotive − ABS − 12-V EPS − Motor Drivers

Contextual Info: Tape Information Vishay Siliconix TO-251 DPAK SHORT LEAD (T1 METHOD) T 4.0 G J See Note 1 See Note 4 E R D See Note 4 16.0 B A 12.0 See Note 1 A M Marking On Plastic Upward K Section A-A Direction of Flow Package Orientation NOTES: 1. 10 sprocket hole pitch cumulative tolerance 0.2.

Si5515DC

Contextual Info: Si5515DC Vishay Siliconix Complementary 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel ID (A) 0.040 @ VGS = 4.5 V 5.9 0.045 @ VGS = 2.5 V 5.6 0.052 @ VGS = 1.8 V 5.2 APPLICATIONS 0.086 @ VGS = −4.5 V −4.1 D Load Switching for Portable Devices

SUD50N02-09P

Contextual Info: SUD50N02-09P Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0095 @ VGS = 10 V 20 0.017 @ VGS = 4.5 V 15 APPLICATIONS VDS (V) 20 D TO-252 Drain Connected to Tab G D TrenchFETr Power MOSFET 175_C Junction Temperature

SUD50N024-09P

Contextual Info: SUD50N024-09P Vishay Siliconix N-Channel 22-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)d 0.0095 @ VGS = 10 V 49 0.017 @ VGS = 4.5 V 36 VDS (V) 24c D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency

df52

Contextual Info: SIEMENS SFD13N05L SPU13N05L SIPMOS Power T ransistor • N channel • Enhancement mode • Logic Level • Avalanche-rated •d i//d f rated Pin 1 • 175°C operating temperature G Pin 2 Pin 3 D S Type Vds b ^DS on Package O rdering Code SPD13N05L 55 V

Contextual Info: 2 1 THIS COPY IS PROVIDED ON A RESTRICTED BASIS AND IS NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANDUIT CORP. PANDUIT PART NUMBER MLT4SH-LP316 MLT6SH-LP316 MLT8SH-LP316 MLT10SH-LP316 MLT12SH-Q316 .88 22.4 B .75 .02 [19.1] MAX BUNDLE DIAMETER

SUD50N02-12P

Contextual Info: SUD50N02-12P Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.012 @ VGS = 10 V 40c 0.026 @ VGS = 4.5 V 27c APPLICATIONS VDS (V) 20 D TO-252 Drain Connected to Tab G D TrenchFETr Power MOSFET 175_C Junction Temperature

hollingsworth h270

Abstract: TL3080 MIL-T-7928/1 R3454B XR5109N R4271S TL3061 MS25036 XR1858SN tl3062
Contextual Info: How to use your catalog This catalog is organized for your convenience in specifying and ordering Hollingsworth Solderless Terminals. The table of Contents lists major sections and highlights the content of each. Each section is preceded by an explanation of the

12p mosfet

Abstract: SUD50N02-12P
Contextual Info: SUD50N02-12P Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.012 @ VGS = 10 V 40c 0.026 @ VGS = 4.5 V 27c APPLICATIONS VDS (V) 20 D TO-252 Drain Connected to Tab G D TrenchFETr Power MOSFET 175_C Junction Temperature

TO252-DPAK

Contextual Info: Tape Information Vishay Siliconix TO-252 DPAK (T1 METHOD) T 4.0 G J See Note 1 See Note 4 E R D See Note 4 16.0 B A 12.0 See Note 1 A M Marking On Plastic Upward K Section A-A Direction of Flow Package Orientation NOTES: 1. 10 sprocket hole pitch cumulative tolerance 0.2.

SUD50N02-11P

Contextual Info: SUD50N02-11P Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 20 D D D D ID (A)a 0.011 @ VGS = 10 V 18 0.020 @ VGS = 4.5 V 13.5 APPLICATIONS D TO-252 Drain Connected to Tab G D TrenchFETr Power MOSFET 175_C Junction Temperature

41168

Abstract: VISHAY 34D SUD50N02409P
Contextual Info: SUD50N024-09P Vishay Siliconix N-Channel 22-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)d 0.0095 @ VGS = 10 V 49 0.017 @ VGS = 4.5 V 36 VDS (V) 24c D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency

41168

Abstract: SUD50N02-09P
Contextual Info: SUD50N02-09P Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0095 @ VGS = 10 V 20 0.017 @ VGS = 4.5 V 15 APPLICATIONS VDS (V) 20 D TO-252 Drain Connected to Tab G D TrenchFETr Power MOSFET 175_C Junction Temperature

Contextual Info: 2 1 THIS COPY IS PROVIDED ON A RESTRICTED BASIS AND IS NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANDUIT CORP. MAX. BUNDLE DIA [mm] 2" [51] 4" [102] 6" [152] 8" [203] 10" [254] PART NO. MSC2W38T15-L6 MSC4W38T15-L6 MSC6W38T15-L6 MSC8W38T15-L6

S-41166

Abstract: SUM110N04-04 SUM110N04-04-E3
Contextual Info: SUM110N04-04 Vishay Siliconix N-Channel 40-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 40 0.0035 @ VGS = 10 V 110 a D TrenchFETr Power MOSFET D 175_C Junction Temperature APPLICATIONS D D Automotive − ABS − 12-V EPS − Motor Drivers

Contextual Info: SUD50N02-09P Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0095 @ VGS = 10 V 20 0.017 @ VGS = 4.5 V 15 APPLICATIONS VDS (V) 20 TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency

ic vertical la 78141

Abstract: IC LA 78141 schematic LA 78141 tv application circuit 4116 ram tda 78141 TMS4500 LA 78141 VERTICAL 21L14 mitsubishi elevator circuit diagram 4464 64k dram
Contextual Info: MOS Memory Data Book 1984 Commercial and Military Specifications ♦ Texas In str u m en ts Alphanumeric Index, Table of Contents, Selection Guide Interchangeability Guide Glossary/Timing Conventions/Data Sheet Structure Dynamic RAM and Memory Support Devices

S-41166

Contextual Info: T H IS COPY IS PROVIDED ON A RESTRICTED BAS IS AND IS NOT TO BE USED O - .88 IN ANY WAY DETRIM ENTAL TO THE INTERESTS OF PANDUIT CORP. PANDUIT PART MAX.BUNDLE PACKAGE LENGTH NO. DIA. Q T Y . "L " + / -.3" [ 7 ] MLT4D5H-Q316 4" [ 102 ] 25 29.5" [ 749 ]

S4120

Contextual Info: CMOS STATIC RAM 256K 64K x 4-BIT PRELIMINARY IDT 61298S IDT 61298L FEATURES: DESCRIPTION: • Fast Output Enable (5E ) pin available lor added system flexibility The IDT61298 is a 262,144-bit high-speed static RAM organized as 64K x 4. It is fabricated using IDT's high-performance, high-reliabllity tech nolog y-C E M O S . This state-of-the-art technology,

Si5515DC

Abstract: vishay MOSFET code marking
Contextual Info: Si5515DC Vishay Siliconix Complementary 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel ID (A) 0.040 @ VGS = 4.5 V 5.9 0.045 @ VGS = 2.5 V 5.6 0.052 @ VGS = 1.8 V 5.2 APPLICATIONS 0.086 @ VGS = −4.5 V −4.1 D Load Switching for Portable Devices

SUD50N02-09P

Contextual Info: SUD50N02-09P Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0095 @ VGS = 10 V 20 0.017 @ VGS = 4.5 V 15 APPLICATIONS VDS (V) 20 D TO-252 Drain Connected to Tab G D TrenchFETr Power MOSFET 175_C Junction Temperature

SUD50N02-11P

Contextual Info: SUD50N02-11P Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 20 D D D D ID (A)a 0.011 @ VGS = 10 V 18 0.020 @ VGS = 4.5 V 13.5 APPLICATIONS D TO-252 Drain Connected to Tab G D TrenchFETr Power MOSFET 175_C Junction Temperature

Contextual Info: Tape Information Vishay Siliconix TO-252 DPAK REVERSE LEAD (T1 METHOD) T 4.0 G J See Note 1 See Note 4 E R D See Note 4 16.0 B A 12.0 See Note 1 A M Marking On Heatsink Upward K Section A-A Direction of Flow Package Orientation NOTES: 1. 10 sprocket hole pitch cumulative tolerance 0.2.