S3588 Search Results

Contextual Info: Si PIN photodiode S2744/S3588-08, -09 Large active area Si PIN photodiodes Features Applications Sensitivity matching with BGO and CsI TI scintillators Scintillation detectors High quantum efficiency (Unsealed type): QE=85 % (λ=540 nm) Hodoscopes Low capacitance

Contextual Info: Si PINフォトダイオード S2744/S3588-08, -09 大面積Si PINフォトダイオード 特長 用途 BGOCsI TI シンチレータに適した感度 高量子効率 (未封止タイプ): QE=85 % (λ=540 nm) シンチレーション検出 低容量 TOFカウンタ

S2744-08

Abstract: S2744-09 S3588-08 S3588-09
Contextual Info: PHOTODIODE Si PIN photodiode S2744/S3588-08, -09 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)

Contextual Info: Si PIN Photodiodes 4 Type No. Dimensional Outline (P.47)/ Window Material Package Active Area Effective Size Active Area (mm) (mm2) 25 S5106 @/R Ceramic 5X5 S5107 ® /R Chip-carrier 10X10 100 S3590-01 S3590-08 ® /R S3204-08 @/R S3584-08 S3588-08 Photo Sensitivity S Typ. (A/W)

Contextual Info: PHOTODIODE Si PIN photodiode S2744/S3588-08, -09 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)

Contextual Info: Si PIN photodiode S2744/S3588-08, -09 Large active area Si PIN photodiodes Features Applications Sensitivity matching with BGO and CsI TI scintillators Scintillation detectors High quantum efficiency (Unsealed type): QE=85 % (λ=540 nm) Hodoscopes Low capacitance

S2744-08

Abstract: S2744-09 S3588-08 S3588-09
Contextual Info: PHOTODIODE Si PIN photodiode S2744/S3588-08, -09 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)

scintillator

Abstract: S2744-08 S3588-08
Contextual Info: PHOTODIODE Si PIN photodiode S2744/S3588-08 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)

Contextual Info: PHOTODIODE Si PIN photodiode S2744/S3588-08, -09 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)

S2744-08

Abstract: S2744-09 S3588-08 S3588-09 PIN photodiode 420 nm
Contextual Info: PHOTODIODE Si PIN photodiode S2744/S3588-08, -09 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)

Contextual Info: Si PIN Photodiodes 4 Type No. Dimensional Outline (P.40-43)/ Window Material*' S1223 S1223 01 S3071 S3072 S1863-01 S3883 S3399 S5106 S5107 S3590 01 S3590 03 S3590 05 S3588 03 *1 W i n d o w m aterial, O /K K /K © /K ® /K ® /K ® /R ® /R Short Photo Sensitivity S (A/W) Typ.

Contextual Info: 0003b2fi HSt HPKJ PIN Silicon Photodiodes 3 Range Peak Sensitivity Wavelength À A p (nm) (nm) Spectral Dimensional Type No. Outline Package (P.42,43) Active Area Effective Size Active Area (mm) ( m m 2) 2.77X2.77 7.7 S2506-02 • S2506-04 S4707-01 S5077

S3588-01

Abstract: S3590-01 S2744-01 S2744
Contextual Info: Large-area Si PIN Photodiodes P h o to S e n s itiv ity S T y p . T ype N o. R e m a rk s O u t* ’ lin e W in d o w * 2 M a te r ia l A c tiv e * 3 A re a S p e c tr a l R esponse R ange m m (n m ) Peak S e n sitivity W avelength Ap (n m ) 3 20 to 1060

near IR photodiodes

Abstract: S8745-01 S8558
Contextual Info: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5

S2973-01

Abstract: S3590-01 S5573 S6775 S1223 S1223-01 SS077 S3590 S5077 S6968
Contextual Info: Si PIN Photodiodes 1 Dimensional Outline Type No. (P.46)/ Window Material ‘ 1 S5821 Active E f f e c t iv e Package ¡Area Size (mm) s Pe c tra l Response Range Area x ! xp (mm2) (nm) ¡ (nm) Short Circuit Current Photo Sensitivity S (A W ) T Peak Active

P4950

Contextual Info: Si PIN Photodiodes 5 Type No. I Dimensional Outline (P.49, 50)/ Window Material *1 Package (mm) S5106 /R Ceramic S5107 @ /R Chip-carrier 57509 ; ; Active Effective j Active Area Size; Area ! 5 x 5 10 x 10 j : 2xio ® r ; (mm2) Spectral Response Range

S8558

Contextual Info: セレクションガイド 2014.5 Siフォトダイオード 紫 外 ~ 近 赤 外 域 放 射 線 に 対 応した ラ イ ン アップ Si PHOTODIODE S i P h o t o d i o d e Siフォトダイオード 紫 外 ∼ 近 赤 外 域 、放 射 線 に 対 応した ラ イ ン アップ

Contextual Info: Large-area Si PIN Photodiodes Type N o. R e m a rk s O u t-*1 line W in d o w *2 M a te ria l A c tiv e *3 A re a S p e c tra l R esponse R ange 300 f i m Wafer Thickness Types 10 x 10 mm active area S3590-08 o 10 x 10 10 x 20 mm active area 10 X 20 S3204-08

S3407

Abstract: S4036 S5533
Contextual Info: Dimensional Outlines Unit : m m O S1226-18BQ, etc. 0 S1190-01, etc. 0 S2386-18L # 5 4 -0 2 WI NDOW iy o *o¿ ^ 4 PS > 0 j o 0 S5531, S5532, S5533 0 S2216-01, etc. O S1190-13 2 ^ r> 4 t ü i- 4 fih ‘ :i i V* 4 6>cj • 0 1 : o -cP -l: • > *'<i Y", 5 K 1 y jtj ¡Inirosiln . it«- ijl.iss!

S5532

Contextual Info: GGG3bEb bfl3 • HPKJ PIN Silicon Photodiodes 2 Dimensional Outline Type No. Package Window Material* S4280 O /K S5531 O /L 3-pin T O -1 8 with lens S4752 O /K 3-pin T O -1 8 S4753 ^ S5533 * Effective Size Active Area (mm) (mm!) ¿ 0 .8 0.5 Peak Spectral

LS 2027 audio amp

Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Contextual Info: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3

GaP photodiode APD

Abstract: uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode
Contextual Info: Index by Type No Type No. Name Page S1087. .Si Photodiode Visible/Visible to IR Range, tor General Photometry . 22, 23 S1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23

S3407

Contextual Info: • 4 2 2 ^ 0 ^ 0DD31.22 T3A ■ HPKJ Silicon Photodiodes Visible/Visible to IR Range Dimensional CM ie Type No. (P.41-43V Window Material"1 S1087 Package Effective Area Size Active Area Spectral Response Photo Sensitivity S Typ. (A/W) Peak . Sensitivity

S2216 02

Abstract: 54752 S1190-03
Contextual Info: Replacement Devices For former devices not listed in this catalog, we recommend using the following replacement devices. These de­ vices are not 100 % compatible with the former devices in specifications including their package dimensions. Please consult us for more details.