S2V 3 Search Results

s3h-02

Abstract: S52A s3vc0 S2V20 S2LA20 s19j S1K20H S1K40 S2K20 S2K40
Contextual Info: -71 m tft te & % Vr s m Vrrm V (V) Vr 1FM T fc# (A) (° C ) lo, If * [si & n £ & I Rtnax VFtnax IFSM m M - & fc fk ft * m <d ^ m S1K 20H S1K 40 S2K 20 S2K 20H S 2K 40 S2L20U S2L40 S2L40 S2L60 S2LA20 S2V 20 S2V 60 S 3 H -0 2 S 3K 40 S3L20U m n a m n ñ

Contextual Info: SIEMENS PNP Silicon Darlington Transistors SMBTA 63 SMBTA 64 • High collector current • High DC current gain Type Marking Ordering Code tape and reel PinCïonfigur ation 1 2 3 Package1) SMBTA 63 SMBTA 64 s2U s2V Q68000-A2625 Q68000-A2485 B SOT-23 E C

15d smd transistor

Abstract: C502A P502-50DC PLL502-50 PLL502-50DC A0303-03J
Contextual Info: VCXO IC Die for 20 to 52MHz Parallel Resonant Crystals •     XIN 27 XOUT 29 VCON 31 S2V 23 S1V 25 S0V VDD 65 mil VDD  Integrated voltage-controlled crystal oscillator circuitry VCXO (pull range 380ppm minimum). Selectable frequency dividers (x1, 1/2, 1/4, 1/8)

C502B

Abstract: clock ma 1042
Contextual Info: PL602-00 Multiplier XO IC Die for 12 to 25MHz Parallel Resonant Crystals FEATURES DIE CONFIGURATION •     VDD VDD S0V S1V S2V Integrated crystal oscillator circuitry XO . Low phase noise (-125dBc @ 10kHz offset and 155.52MHz output) Selectable frequency multipliers (x1, x2, x4, x8

marking code SOT23 SSi

Abstract: MARKING code SSi SOT23 code marking ssi sot-23 O ssi SOT-23
Contextual Info: SIEMENS PNP Silicon Darlington Transistors SMBTA 63 SMBTA 64 • High collector current • High DC current gain Type Marking Ordering Code tape and reel PinCïonfigui ation 1 2 3 Package1) SMBTA 63 SMBTA 64 s2U s2V Q68000-A2625 Q68000-A2485 B SOT-23 E C

Contextual Info: SMBTA63, SMBTA64 PNP Silicon Darlington Transistors 3
High collector current
High DC current gain 2 1 Type Marking Pin Configuration SMBTA63 s2U 1=B 2=E 3=C SOT23 SMBTA64 s2V 1=B 2=E 3=C SOT23 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage

clock ma 1042

Abstract: C502A P602-00DC PLL602-00DC A-0303
Contextual Info: PLL602-00 Multiplier XO IC Die for 12 to 25MHz Parallel Resonant Crystals FEATURES DIE CONFIGURATION • • • • VDD VDD S0V S1V S2V Integrated crystal oscillator circuitry XO . Low phase noise (-135dBc @ 10kHz offset) selectable frequency multipliers (x1, x2, x4, x8

clock ma 1042

Abstract: max 474 ic data X62M
Contextual Info: PL502-00 Multiplier VCXO IC Die for 12 to 25MHz Parallel Resonant Crys tals •     XIN 27 XOUT 29 VDD S0V S1V S2V  65 mil VDD Integrated voltage-controlled crystal oscillator circuitry VCXO (pull range 500ppm minimum). Low phase noise (-125dBc @ 10kHz offset and

EHP00364

Contextual Info: SMBTA 63, SMBTA 64 PNP Silicon Darlington Transistors 3 • High collector current • High DC current gain 2 1 Type Marking Pin Configuration SMBTA 63 s2U 1=B 2=E 3=C SOT-23 SMBTA 64 s2V 1=B 2=E 3=C SOT-23 VPS05161 Package Maximum Ratings Parameter Symbol

Contextual Info: > I CD I O DIMENSIONS IN METRIC DO NOT SCALE DRAWING sMM DWG. NO. S D -5 9 2 3 3 -9 0 * * 2—I Ftf □ll|l m cu on © " V' h rfK S P ^ - > ^ sh” > v,r ;34+P 7;d 'H -P 7; S 5 S * y_, i ^ a s 4gc3-H-5S-S2V.' § S=SV 4 ¡1 - S S 2 I •■! i s I sDH-oJW-iiSii "0^3

S2V 80

Abstract: S2V 3 S2V 12
Contextual Info: SHINDENGEN General Purpose Rectifiers Single OUTLINE DIMENSIONS S2V60 Unit : mm 600V 1.7A FEATURES High voltage High reliability with superior moisture resistance Applicable to Automatic Insertion APPLICATION Conventional Rectification Power source Power Supply

S3V 8* Rectifier

Abstract: s4vb s4vb 10 46 s4vb bridge rectifier
Contextual Info: Large Ifsm I-I S MD • — 0 .8 -1 A - 0 .4 -1 A 1-1.5A Bridge * • S I P - 4~6A *?i gDiodes j 1 0 -2 5 A * S Q IP ;• 2 .3 -2 0 A 2 -1 0 A 1 5 -5 0 A * SI ZB □ S1NB □ S1W B A D S1YB □ S1ZB □ S1NB □ S1 WB(A) □ S1VB □ D2SBA □ — D 2SBD L — Low Noise

S2V 80

Abstract: f17a S2V 15 S2V 3 S2V20
Contextual Info: SHINDENGEN General Purpose Rectifiers Single OUTLINE DIMENSIONS S2V20 Unit : mm 200V 1.7A FEATURES High voltage High reliability with superior moisture resistance Applicable to Automatic Insertion APPLICATION Conventional Rectification Power source Power Supply

Contextual Info: MITSUBISHI LSIs M5M5255CP,FP,KP-55LL,-55XL, -70LL,-70XL 262144-BfT 32768-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION This M5M5255CP.FP.KP is a 262144-bit CMOS static RAMs organized as 32768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of

LD 7522

Abstract: ld 7523 SN7523N SN7524N SN7525N SN7522N
Contextual Info: FEATURES ABSOLUTE MAXIMUM RATINGS . • . • Differential Input Voltage VCC Strobe & Gain Input Voltages Storage Temperature Operating Temperature Power Dissipation DUAL SENSE AMPS ±4mV THRESHOLD UNCERTAINTY DESIGN VERSATILITY 25ns PROPAGATION DELAY ±5V

Contextual Info: SCHOTTKY BARRIER DIODE C16T03Q C16T04Q 17.7A/30— 40V SQUARE-PAK FEATURES ° Similar to TO-263AB Case, Surface Mount Device ° Dual Diodes - Cathode Common » Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability ° 30 Volts through 100 Volts Types Available

PLG100-VH

Abstract: PLG150-DX Yamaha XG PLG100-XG PLG150-PF PLG150 PLG150-AN Yamaha PLG150-VL yamaha keyboard
Contextual Info: Introducing the y S80 Working with XGworks 3.0 Lite XGworks 3.0 Lite is a Windows sequencing program included on the S80 CDROM. It can house several different software plug-ins designed to act as Voice Editors for the Modular Synthesis Plug-in System. The

MPY600

Abstract: MPY600AP 25VY
Contextual Info: 185 - MPY600 v ± V CC = ± id 5 V , *?• m ( 0 ^5 # Burr B r o w n T a= 2 5 r ) 4k ft MPY600AP * 'h ; * * ¥ 1 * £ ± 1 ,- y2 ± 2 y z ,- z 2 ± 2 A-umtEmw ± 2 .2 V ± 2 .5 V TtyM v 100 / / l . 5 h l E K 'J - 7 Y +l 11 > I SV R «E a t) m sm m c a

M5M5255CP

Abstract: m5m5255cfp
Contextual Info: MITSUBISHI LSI* M5M5255CP, FP, KP-55LL,-55XL, -70LL.-70XL 262144-BIT 32768-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION This M5M5255CP,FP,KP is a 262144-bit CMOS static RAMS organized as 32768-words by B-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of

VR-61

Abstract: VR-61B VR-61S VR-61U VR-62B VR-63B
Contextual Info: - 278- ft B & PSH W VR-61 VR-61B VR-61B VR-61S VR-61T VR-61U VR-62B VR-63B VRAY6 VRAY15 a m * 'J i? y fT ^T C i f y >r '•/ >>r y * y ^ > * ' ) is > %jM7C :k £ fe VRRM Vr I sm I f . I fm* (mHO (V) (V) (A) (mA) 300 150 150 7. 5 150 150 150 300 150 150 150

VR-63B

Abstract: VR-61 VR-61B VR-61S VR-61U VR-62B
Contextual Info: - 278- ft B VR-61 VR-61B VR-61B VR-61S VR-61T VR-61U VR-62B VR-63B VRAY6 VRAY15 & a m * 'J i? y PSH P W (mHO :k £ fe V RRM V r I sm (V ) (A) (V ) 300 7. 5 fT ^ T C i f y >r '• / >>r y 300 * y ^ > * ') is > %jM7C 8 6. 5 I f. I fm * (mA) ]S V f (V ) m in

VR-61

Abstract: VR-61B VR-61S VR-61U VR-62B VR-63B
Contextual Info: - 278- ft B VR-61 VR-61B VR-61B VR-61S VR-61T VR-61U VR-62B VR-63B VRAY6 VRAY15 & a m * 'J i? y PSH P W (mHO :k £ fe V RRM V r I sm (V ) (A) (V ) 300 7. 5 fT ^ T C i f y >r '• / >>r y 300 * y ^ > * ') is > %jM7C 8 6. 5 I f. I fm * (mA) ]S V f (V ) m in

c3v2

Abstract: E526HN-100318 S3V 09 e526hna-100079 TOKO Inductance Test 10EZ TOKO 10EZ E526H E526HNA-100311 S2V 80 TOKO Inductance Test 10K
Contextual Info: 98 MC120 Î3TOKO Moktod Colls TYPE MC120 Space Wound: Inductance Range 0.04-0.21 jiH Close Wound: Inductance Range0.04-0.53|iH Frequency Range: 3 0 -1 5 0 M H z': Temperature Coefficient: I5 0 p p m /°C , max. 1 II t fj Unit: mm Features • Popular for low profile applications.

Contextual Info: 35E D • A23b320 0Q172Ô4 2 « S I P PNP Silicon Darlington transistors SMBTA 63 SIEMENS/ SPCL, SEMICONDS SM BTA64 High collector current High DC current gain Type Marking Ordering code or versions in bulk Ordering code for versions on 8 mm-tape Package