S2V 3 Search Results

s3h-02

Abstract: S52A s3vc0 S2V20 S2LA20 s19j S1K20H S1K40 S2K20 S2K40
Contextual Info: -71 m tft te & % Vr s m Vrrm V (V) Vr 1FM T fc# (A) (° C ) lo, If * [si & n £ & I Rtnax VFtnax IFSM m M - & fc fk ft * m <d ^ m S1K 20H S1K 40 S2K 20 S2K 20H S 2K 40 S2L20U S2L40 S2L40 S2L60 S2LA20 S2V 20 S2V 60 S 3 H -0 2 S 3K 40 S3L20U m n a m n ñ

marking code SOT23 SSi

Abstract: MARKING code SSi SOT23 code marking ssi sot-23 O ssi SOT-23
Contextual Info: SIEMENS PNP Silicon Darlington Transistors SMBTA 63 SMBTA 64 • High collector current • High DC current gain Type Marking Ordering Code tape and reel PinCïonfigui ation 1 2 3 Package1) SMBTA 63 SMBTA 64 s2U s2V Q68000-A2625 Q68000-A2485 B SOT-23 E C

clock ma 1042

Abstract: C502A P602-00DC PLL602-00DC A-0303
Contextual Info: PLL602-00 Multiplier XO IC Die for 12 to 25MHz Parallel Resonant Crystals FEATURES DIE CONFIGURATION • • • • VDD VDD S0V S1V S2V Integrated crystal oscillator circuitry XO . Low phase noise (-135dBc @ 10kHz offset) selectable frequency multipliers (x1, x2, x4, x8

clock ma 1042

Abstract: max 474 ic data X62M
Contextual Info: PL502-00 Multiplier VCXO IC Die for 12 to 25MHz Parallel Resonant Crys tals •     XIN 27 XOUT 29 VDD S0V S1V S2V  65 mil VDD Integrated voltage-controlled crystal oscillator circuitry VCXO (pull range 500ppm minimum). Low phase noise (-125dBc @ 10kHz offset and

S2V 80

Abstract: S2V 3 S2V 12
Contextual Info: SHINDENGEN General Purpose Rectifiers Single OUTLINE DIMENSIONS S2V60 Unit : mm 600V 1.7A FEATURES High voltage High reliability with superior moisture resistance Applicable to Automatic Insertion APPLICATION Conventional Rectification Power source Power Supply

S3V 8* Rectifier

Abstract: s4vb s4vb 10 46 s4vb bridge rectifier
Contextual Info: Large Ifsm I-I S MD • — 0 .8 -1 A - 0 .4 -1 A 1-1.5A Bridge * • S I P - 4~6A *?i gDiodes j 1 0 -2 5 A * S Q IP ;• 2 .3 -2 0 A 2 -1 0 A 1 5 -5 0 A * SI ZB □ S1NB □ S1W B A D S1YB □ S1ZB □ S1NB □ S1 WB(A) □ S1VB □ D2SBA □ — D 2SBD L — Low Noise

S2V 80

Abstract: f17a S2V 15 S2V 3 S2V20
Contextual Info: SHINDENGEN General Purpose Rectifiers Single OUTLINE DIMENSIONS S2V20 Unit : mm 200V 1.7A FEATURES High voltage High reliability with superior moisture resistance Applicable to Automatic Insertion APPLICATION Conventional Rectification Power source Power Supply

PLG100-VH

Abstract: PLG150-DX Yamaha XG PLG100-XG PLG150-PF PLG150 PLG150-AN Yamaha PLG150-VL yamaha keyboard
Contextual Info: Introducing the y S80 Working with XGworks 3.0 Lite XGworks 3.0 Lite is a Windows sequencing program included on the S80 CDROM. It can house several different software plug-ins designed to act as Voice Editors for the Modular Synthesis Plug-in System. The

MPY600

Abstract: MPY600AP 25VY
Contextual Info: 185 - MPY600 v ± V CC = ± id 5 V , *?• m ( 0 ^5 # Burr B r o w n T a= 2 5 r ) 4k ft MPY600AP * 'h ; * * ¥ 1 * £ ± 1 ,- y2 ± 2 y z ,- z 2 ± 2 A-umtEmw ± 2 .2 V ± 2 .5 V TtyM v 100 / / l . 5 h l E K 'J - 7 Y +l 11 > I SV R «E a t) m sm m c a

M5M5255CP

Abstract: m5m5255cfp
Contextual Info: MITSUBISHI LSI* M5M5255CP, FP, KP-55LL,-55XL, -70LL.-70XL 262144-BIT 32768-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION This M5M5255CP,FP,KP is a 262144-bit CMOS static RAMS organized as 32768-words by B-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of

VR-63B

Abstract: VR-61 VR-61B VR-61S VR-61U VR-62B
Contextual Info: - 278- ft B VR-61 VR-61B VR-61B VR-61S VR-61T VR-61U VR-62B VR-63B VRAY6 VRAY15 & a m * 'J i? y PSH P W (mHO :k £ fe V RRM V r I sm (V ) (A) (V ) 300 7. 5 fT ^ T C i f y >r '• / >>r y 300 * y ^ > * ') is > %jM7C 8 6. 5 I f. I fm * (mA) ]S V f (V ) m in

c3v2

Abstract: E526HN-100318 S3V 09 e526hna-100079 TOKO Inductance Test 10EZ TOKO 10EZ E526H E526HNA-100311 S2V 80 TOKO Inductance Test 10K
Contextual Info: 98 MC120 Î3TOKO Moktod Colls TYPE MC120 Space Wound: Inductance Range 0.04-0.21 jiH Close Wound: Inductance Range0.04-0.53|iH Frequency Range: 3 0 -1 5 0 M H z': Temperature Coefficient: I5 0 p p m /°C , max. 1 II t fj Unit: mm Features • Popular for low profile applications.

Contextual Info: 35E D • A23b320 0Q172Ô4 2 « S I P PNP Silicon Darlington transistors SMBTA 63 SIEMENS/ SPCL, SEMICONDS SM BTA64 High collector current High DC current gain Type Marking Ordering code or versions in bulk Ordering code for versions on 8 mm-tape Package

SN7525N

Abstract: SN7524N
Contextual Info: FEATURES ABSOLUTE MAXIMUM RATINGS • • • • Differential Input Voltage Vc c Strobe & Gain Input Voltages Storage Temperature Operating Temperature Power Dissipation DUAL SENSE AMPS =4mV THRESHOLD UNCERTAINTY DESIGN VERSATILITY 25ns PROPAGATION DELAY

S2VC

Abstract: S3VC S1F-C S3SI S3FC s4si s2f-c 32-32NS-2A s4sd 32-32NS
Contextual Info: Przełączniki serii S.F-. 57 Standardowe przełączniki dźwigniowe, wyprowadzenia fastonowe S2F-I • • • • S4F-I S3F-D S1F-I Fot. 2 Fot. 1 przełączanie dźwignią wyprowadzenia fastonowe 1, 2, 3 i 4 polowe * natężenie przełączanych prądów 20 A / 125 VAC

506b

Abstract: VR-61 VR-61B VR-61S VR-61U VR-62B VR-63B
Contextual Info: 278- - B VR-61 VR-61B VR-61B VR-61S VR-61T VR-61U VR-62B VR-63B VRAY6 VRAY15 & f t :k £ fe J 15 |S] f $ t t Vf » S B E ®]S Ik W Vc * 4 = BV r • f ® fti ffl # I Rmax * f l = V f (V PSH P VRRM Vr I sm I f . r f *«= I fm* If («A) (V) I r (A) (V) I r ( h A) </i A) Vr (V)

DIODE 24B

Abstract: DIODE S2v DIODE in s2v Mitsubishi transistor circuit diagram for je 182 g
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM800HA-24B j HIGH POWER SWITCHING USE [ INSULATED TYPE | QM800HA-24B • • • • • Ic Collector c u rre n t. 800A V cex Collector-em itter v o lta g e 1200V hFE DC current g a in . 750

Contextual Info: U —Jl' R ! 5 { i 178 / ij —Jl' R25 i*330) Reel size iM78(EIAJ R 15)/R e e l size ?*330(EIAJ R25) biz C ase No. 1Z D evice ^ - X No. Case No. 1 ZM 1Z type K Order code 4 0 6 2 4 0 7 2 -r“ T - Yl > X" Taping ~'f i± Dimensions |j j ±o- (12mm Ifg) M R:

ADG1421BRMZ

Abstract: 08487 adg1421 ADG1422 10 lead analog devices b 11 S2V 80 ADG1423 ADG1433 S2V 3 10-Lead LFCSP footprint
Contextual Info: 2.1 Ω On Resistance, ±15 V/+12 V/±5 V iCMOS Dual SPST Switches ADG1421/ADG1422/ADG1423 FEATURES FUNCTIONAL BLOCK DIAGRAM 2.1 Ω on resistance 0.5 Ω maximum on resistance flatness Up to 250 mA continuous current Fully specified at +12 V, ±15 V, ±5 V No VL supply required

d2758

Abstract: DIODE in s2v
Contextual Info: DS3680I QUAD TELEPHONE RELAY DRIVER SLRS014B- D27S6, MARCH 1966 - REVISED APRIL 1993 Designed for -S2-V Battery Operation D O R N PA C K A G E TOP VIEW 50-mA Output Current Capability Input Compatible With TTL and CMOS 1 IN + [ 1 IN— [ 2 IN— [ 2 IN + [

6116 block diagram

Contextual Info: Irillll I V i l l l September 1989 HM 6116 DATA SHEET_ 2kx8 GENERAL PURPOSE CMOS SRAM FEATURES TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS SINGLE 5 VOLT SUPPLY EQUAL CYCLE AND ACCESS TIME NO CLOCK AND STROBES REQUIRED GATED INPUTS WIDE TEMPERATURE RANGE : - 55 TO + 125 C

Contextual Info: LOGIC DEVICES INC 8K X 8 Static RAM 2bE D Low Power FEATURES • 55L.5Ì05 aOGlG3b 7 ■ L 7 C 1 8 5 / L 7 C L 1 8 5 DESCRIPTION 'T ¥ ¿ - 2 3 -/1 li data may be retained in inactive stor­ The L7C185 and L7CL185 are highperformance, low-power CMOS static age with a supply voltage as low as

Contextual Info: LOGIC DEVICES INC 2bE D • SSbSTGS OGQlQib 3 ■ 2 x 4 K x 16 Cache-Data Static RAM DESCRIPTION FEATURES □ 2 x 4K x 16 or 8K x 16 Cache-Data Static RAM with Direct Map or Two-Way Set Associative □ Auto-Powerdown Design □ Advanced CMOS Technology

Contextual Info: MITSUBISHI LSlS M5M51008AP,FP,VP,RV-55L,-55LL 1048576-BIT 131072-WORD BY 8-BIT CM0S STATIC RAM DESCRIPTION The PIN CONFIGURATION (TOP VIEW) M 5 M 5 1 0 0 8 A P , FP, V P , RV are a 1 0 4 8 5 7 6 - b it CMOS s ta tic R A M o rga n ized as 1 3 1 0 7 2 w o rd b y 8 - b it w h ic h are