S2L 92 Search Results

1283310

Abstract: LB1807 lb1809 148781 front panel ls36 1-57748-0
Contextual Info: Minimate Range - S2L/B2L 3.5 Since conductors with cable sizes of up to 1 mm2 can be connected, the Minimate Range is a positive alternative to 2.5/2.54 mm pitch connectors. In particular because it uses up to 10% less space on the PCB. At the same time, due to its tension

WEIDM

Abstract: powermate
Contextual Info: Printed Circuit Board Connectors Many of our printed circuit board connectors are specialists. To help you to keep track of the variety, we have arranged our pin headers and socket blocks by their features. Weidmueller offers five different product families:

s2l 78

Abstract: 281-1406-ND 281-1408-ND 281-1448-ND 12AWG 281-1414-ND Weidmuller BLZ 5.08 281-1943-ND 281-1181-ND 281-1849-ND
Contextual Info: p114-118 Weidmuller Term. Blk 3/6/06 10:01 AM Page 1 Terminal Blocks 6.2 4.4 8.3 Ø 1.3 16.75 Specifications: • Screw Clamp • UL: 300V @ 10A • 14AWG • Pin Length: 4.5mm Specifications: • Screw Clamp • UL: 300V @ 10A • 14AWG • Pin Length: 4.5mm

APT5010B

Contextual Info: • 0 2 5 7 * 10 ^ DÜG22Q2 bTT APT5010B2VR ADVANCED POW ER Te c h n o lo g y 500V 47A 0.100Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

zo 107 NA P 611

Abstract: BFR96 L 0403 817 BFR96T
Contextual Info: TEMIC BFR96T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band an­ tenna amplifier. Features • High power gain

Contextual Info: I Ordering number : ENN6578 NPN Epitaxial Planar Silicon Transistor EC3H07B UHF to S Band Low-Noise Amplifier and OSC Applications Package Dimensions Features unit : mm • Low noise : NF=1.5dB typ f=2GHz . • High cut-off frequency : fx=10G H z typ (V cE =l V). 2 1 8 3

kl SN 102 94-0

Abstract: WV2 marking marking WV2 Q 371 Transistor BFQ67WI
Contextual Info: TEMIC BFQ67W Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications Low noise small signal amplifiers up to 2 GHz. This tran­ sistor has superior noise figure and associated gain

955 539 ic

Abstract: BFP81 0211s ix 0640
Contextual Info: Tem ic BFP81 Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features • Small feedback capacitance • Low noise figure

temic 0675

Abstract: 7334
Contextual Info: Tem ic BFQ81 Semiconductors Silicon NPN Planer RF Transistor Applications Electrostatic sensitive device. Observe precautions for handling. M RF amplifier up to 2 GHz, especially for mobile telephone. Features • Small feedback capacitance • Low noise figure

f39e

Contextual Info: 0 N t e œ (D N “ I o - - tsd — — I 3 > - J 7. 2. ^ Z h . -— (HOLE' O l A 'O 'i FIG.3 j ;z: - 708-5302 F/ G, 2 *>DIH*i U^-C J £ > 'rc t> — - — I a. a n « a e m i* 6. « • A _ k o N . a c c u m u la t e ^ \ TOLERANCE f.sc 3125-'" *7 i» >- :7~c o S 3 S 5 - N Û . 2<t? Z3

din 3141

Contextual Info: TEMIC BFW92A Semiconductors Silicon NPN Planar RF Transistor Applications Electrostatic sensitive device. Observe precautions for handling. ^ Wide band RF amplifier up to GHz range. Features • High power gain • Low noise figure BFW92A Marking: BFW92A Plastic case TO 50

ML 1557 b transistor

Contextual Info: T e m ic BFS17/BFS17R S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package l R E1— 1

ML 1557 b transistor

Abstract: lm 1766 ic LM 748
Contextual Info: TEMIC BFR90A S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain

lm 538 n ic

Abstract: BFR90
Contextual Info: TEMIC BFR90 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain •

Contextual Info: TEMIC BFS17AW S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications W ide-band, low noise, small signal amplifiers up to UHF frequencies, high speed logic applications and oscillator

Contextual Info: TEMIC BFR96TS S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain

Contextual Info: Temic BFS17A/BFS17AR S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications W ide-band, low noise, small signal amplifiers up to UHF frequencies, high speed logic applications and oscillator ap­

sl2 357

Abstract: ML 1557 b transistor telefunken P 152 MT a3 sot 343
Contextual Info: Temic BFP93A S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF amplifier up to GHz range. Features • High power gain • Low noise figure • High transition frequency

sl2 357

Abstract: ML 1557 b transistor transistor MW 882
Contextual Info: Temic BFP93AW S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF amplifier up to GHz range. Features • High power gain • Low noise figure • High transition frequency

max341

Abstract: MAX345CPE MAX345EJE
Contextual Info: Æ / J X I / k l H igh Voltage C M O S /D M O S A nalog S w itch es _ F e a tu re s The MAX341/43/45/48 are CMOS/DMOS analog switches intended for high voltage use as well as high reliability general purpose applications. The operating supply range is ±20V to ±50V or +20V to

TS3310

Contextual Info: TS3310 A True 150-nA IQ, 0.9-3.6VIN, Selectable 1.8-5VOUT Instant-OnTM Boost Converter FEATURES DESCRIPTION  Ultra-Efficient Boost Converter: Active Mode, No-load Supply Current: 150nA Efficiency: Up to 92% Input Voltage Range: 0.9V-3.6V Delivers up to 35mA at 3VSTORE from 1.2VIN

TS3310

Contextual Info: TS3310 A True 150-nA IQ, 0.9-3.6VIN, Selectable 1.8-5VOUT Instant-OnTM Boost Converter FEATURES  Ultra-Efficient Boost Converter: Active Mode, No-load Supply Current: 150nA Efficiency: Up to 92% Input Voltage Range: 0.9V-3.6V Delivers up to 35mA at 3VSTORE from 1.2VIN

Contextual Info: B U R R -B R O W N PCM1727 n = n = n ^aeemaC— Stereo Audio DIGITAL-TO-ANALOG CONVERTER WITH PROGRAMMABLE DUAL PLL FEATURES DESCRIPTION • ACCEPTS 16-, 20-, OR 24-BIT INPUT DATA • COMPLETE STEREO DAC: Includes Digital Filter and Output Amp • DYNAMIC RANGE: 92dB

NE674

Abstract: NE67483 NE67483B
Contextual Info: PRELIMINARY DATA SHEET_ M E C / G a A s / M E S f e t NE674 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure N F = 1.4 dBTYP. a tf= 1 2 G H z • High associated gain G a = 1 0 dBTYP, a t f = 1 2 GHz • Gate width: Wg = 280 ¿¿m