S2DA MARKING CODE Search Results

S2M marking code

Abstract: S2M Device marking code
Contextual Info: S2A/A - S2M/A 1.5A SURFACE MOUNT GLASS PASSIVATED RECTIFIER SPICE MODELS: S2A S2B S2D S2G S2J S2K S2M S2AA S2BA S2DA S2GA S2JA S2KA S2MA Features • · · · Glass Passivated Die Construction Low Forward Voltage Drop and High Current Capability Surge Overload Rating to 50A Peak

marking code 63, sma package

Abstract: S2A-13 S2AA-13 S2M marking code
Contextual Info: S2A/A - S2M/A 1.5A SURFACE MOUNT GLASS PASSIVATED RECTIFIER SPICE MODELS: S2A S2B S2D S2G S2J S2K S2M S2AA S2BA S2DA S2GA S2JA S2KA S2MA Features • · · · Glass Passivated Die Construction Low Forward Voltage Drop and High Current Capability Surge Overload Rating to 50A Peak

S2M marking code

Abstract: marking code 15 SMA
Contextual Info: S2A/A - S2M/A 1.5A SURFACE MOUNT GLASS PASSIVATED RECTIFIER SPICE MODELS: S2A S2B S2D S2G S2J S2K S2M S2AA S2BA S2DA S2GA S2JA S2KA S2MA Features • · · · Glass Passivated Die Construction Low Forward Voltage Drop and High Current Capability Surge Overload Rating to 50A Peak

marking CODE S2A

Abstract: S2M Device marking code S2M marking code S2A-13 S2A-13-F S2AA-13 marking code 15 SMA SMA MARKING S2J
Contextual Info: S2A/A - S2M/A 1.5A SURFACE MOUNT GLASS PASSIVATED RECTIFIER SPICE MODELS: S2A S2B S2D S2G S2J S2K S2M S2AA S2BA S2DA S2GA S2JA S2KA S2MA Features • · · · · Glass Passivated Die Construction Low Forward Voltage Drop and High Current Capability Surge Overload Rating to 50A Peak

marking CODE S2A

Abstract: diode s2m marking CODE GA marking codes S2M Device marking code
Contextual Info: S2A/A - S2M/A 1.5A SURFACE MOUNT GLASS PASSIVATED RECTIFIER SPICE MODELS: S2A S2B S2D S2G S2J S2K S2M S2AA S2BA S2DA S2GA S2JA S2KA S2MA Features • · · · Glass Passivated Die Construction Low Forward Voltage Drop and High Current Capability Surge Overload Rating to 50A Peak

Contextual Info: S2A/A - S2M/A 1.5A SURFACE MOUNT GLASS PASSIVATED RECTIFIER SPICE MODELS: S2A S2B S2D S2G S2J S2K S2M S2AA S2BA S2DA S2GA S2JA S2KA S2MA Features • · · · Glass Passivated Die Construction Low Forward Voltage Drop and High Current Capability Surge Overload Rating to 50A Peak

Contextual Info: SPICE MODELS: S2A S2B S2D S2G S2J S2K S2M S2AA S2BA S2DA S2GA S2JA S2KA S2MA S2A/A - S2M/A 1.5A SURFACE MOUNT GLASS PASSIVATED RECTIFIER Features • · · · · Glass Passivated Die Construction Low Forward Voltage Drop and High Current Capability Surge Overload Rating to 50A Peak

S2M marking code

Abstract: S2A-13-F S2AA-13-F
Contextual Info: SPICE MODELS: S2A S2B S2D S2G S2J S2K S2M S2AA S2BA S2DA S2GA S2JA S2KA S2MA S2A/A - S2M/A 1.5A SURFACE MOUNT GLASS PASSIVATED RECTIFIER Features • · · · · Glass Passivated Die Construction Low Forward Voltage Drop and High Current Capability Surge Overload Rating to 50A Peak

s2da marking code

Contextual Info: BL GALAXY ELECTRICAL S2AA - S2MA 111REVERSE VOLTAGE: 50 - 1000 V CURRENT: 2.0 A SURFACE MOUNT RECTIFIER FEATURES DO - 214AC SMA Plastic package has underwriters laboratory 111 flammability classification 94V-0 For surface mounted applications Low profile package

S2MA

Contextual Info: BL GALAXY ELECTRICAL S2AA - S2MA 111REVERSE VOLTAGE: 50 - 1000 V CURRENT: 1.5 A SURFACE MOUNT RECTIFIER FEATURES DO - 214AC SMA Plastic package has underwriters laboratory 111 flammability classification 94V-0 For surface mounted applications Low profile package

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

TB03100M

Abstract: TRIPLE ZENER DIODE ARRAY Dual N-Channel mosfet sot-363 Dual P-Channel mosfet sot-363 thyristor tt 330 n16 DMMT847B sot26 sot363 transistor ALL4150 sot-363 MARKING n10 diode marking code LY sot-353
Contextual Info: Product Catalog 2002/2003 Click to go to: - Table of Contents - New Products List - Index Click: part numbers > data sheets Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2002/2003 Specifications are subject to change without notice.

smd marking 911 zener

Abstract: d3g smd NPN Transistor smd code LY 83 marking codes transistors a8 sot-23 TRANSISTOR SMD MARKING CODE s2a 1045ct mosfet SOD-123 a18 W06* MARKING smd code KBJ 3580 6045pt
Contextual Info: RETURN TO SHORT FORM TABLE OF CONTENTS ################################### RETURN TO SHORT FORM INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Short Form Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 September 1999 Specifications are subject to change without notice.

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

mur1650

Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and

A14F diode

Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
Contextual Info: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.

equivalent components of diode 1N5399

Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
Contextual Info: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

FE16B

Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Contextual Info: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

transistor U1620R

Abstract: fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100
Contextual Info: MUR1620CTR Preferred Device SWITCHMODE Dual Ultrafast Power Rectifier . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave

PK MUR 460

Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
Contextual Info: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,