S25D Search Results

S25D30

Abstract: S25D60
Contextual Info: S25D30PT CHENMKO ENTERPRISE CO.,LTD THRU SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 30 - 60 Volts S25D60PT CURRENT 25 Amperes FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Metal Silicon junction, majority carrier conduction

s25d30-s25d45

Abstract: S25D S25D30 S25D60
Contextual Info: MOSPEC S25D30 thru S25D60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

T919

Abstract: S25D S25D30 S25D45 S25D50 S25D60 V01TAGE
Contextual Info: Bk MOSPEC S25D30 Thru S25D60 Schottky Barrier Rectifiers SCHOTTKY BARR IER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact.

sgs25D

Contextual Info: 3ÜE V • TTE' ÌSB? D0 3GbS b T ■ r r 7 SGS-THOMSON ^ 7 # r IL U m « ! SG S25DA080D S G S-THOMSON NPN DARLINGTON POWER MODULE . POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS * LOW Rth JUNCTION TO CASE . FREEWHELING DIODE . ADAPTED FOR HIGH POWER SWITCHING

S25D

Abstract: S25D30 S25D45 S25D50 S25D60 V01TAGE
Contextual Info: S25D30 Thru S25D60 mospec Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact.

SGS25DB070D

Abstract: LC 0809 HALF BRIDGE NPN DARLINGTON POWER MODULE NPN DARLINGTON POWER MODULE sgs25D
Contextual Info: 3QE D • rz 7 ^ 7# TWSB? Q030bcJb D ■ SC S-TH O M SO N KilD DlH] [l[LiOU^(Q lD(gi s g S-THOMSON '" f ‘3> W 5 SG S25DB070D HALF BRIDGE NPN DARLINGTON POWER MODULE . POWER MODULE WITH INTERNAL ISOLA­ TION (2500V RMS) . LOW Rth JUNCTION TO CASE > FREEWHEELING DIODE

smd lg diode

Abstract: Q62703Q1640 Q62703-Q1608 diodes siemens Q62703-Q1657 smd code LR S25000 diode s250 S250-D0 S250
Contextual Info: L I Q3E D • ISIEG ô235büS 001feilST_T LR S250 LU S250 Light Emitting Diodes T '-'V I-Jf SIEMENS AKTIEN6ESELLSCHAF LEDs-single and double diodes • • • • • • Backlighting of LCDs Proximity switches Touch keyboards Failure Indications on SMD PC boards

Contextual Info: S25B thru S25JR Silicon Standard Recovery Diode VRRM = 100 V - 600 V IF = 25 A Features • High Surge Capability • Types from 100 V to 600 V VRRM DO-4 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode.

Contextual Info: S25B R THRU S25Q(R) DACO SEMICONDUCTOR CO., LTD. STANDARD RECOVERY DIODES STUD TYPE 25A Features 25Amp Rectifier 50-1200 Volts High Surge Capability Types up to 1200V V RRM DO-4 B Maximum Ratings N Operating Temperature: -65 C to +175 Storage Temperature: -65 C to +200

Contextual Info: MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

marking S25G

Abstract: S25G S25K s25b
Contextual Info: MCC S25A THRU S25M
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# Features • • • • • 25 Amp Recovery Rectifier Low Cost Low Forward Voltage Drop High Current Capability High Surge Current Capability

S46B

Abstract: CXA1992BR S36D S16S
Contextual Info: CXA1992BR RF Signal Processing Servo Amplifier For the availability of this product, please contact the sales office. Description The CXA1992BR is a bipolar IC developed for CD player RF signal processing and servo control. Features • Automatic focus bias adjustment circuit

Contextual Info: 19-1090; Rev 0; 6/96 A I^ X IV M 6 8 H C 11/B id ire c tio n a l-C o m p a tib le #iP R e s e t C irc u it This device perform s a single function: it asserts a reset signal w henever the V c c supply voltage falls below a p r e s e t t h r e s h o ld o r w h e n e v e r m a n u a l re s e t is

SRA255

Contextual Info: MCC 12 AMPERE I DO-4 1N1199A 1N1200A 1N1202A 1N1204A 1N1206A 1N3671A 1N3673A 50 100 200 400 600 800 1000 Package Outline Pg. A-9 12 12 12 12 12 12 12 150 150 150 150 150 150 150 240 240 240 240 240 240 240 3000 2500 2000 1500 1000 1000 1000 1.35 1.35 1.35

SONY OPTICAL PICK-UP 313

Abstract: tzc 500 32 resistance CXA1992R S25D S36D S49b
Contextual Info: CXA1992R Preliminary RF Signal Processing Servo Amplifier For the availability of this product, please contact the sales office. Description The CXA1992R is a bipolar IC developed for CD player RF signal processing and servo control. This IC supports three-spot optical system pickups.

s45d

Abstract: CXA1992BR S36D S46B S49b E9721 cxa1992ar DIODE S45d
Contextual Info: CXA1992BR RF Signal Processing Servo Amplifier Description The CXA1992BR is a bipolar IC developed for CD player RF signal processing and servo control. Features • Automatic focus bias adjustment circuit • Automatic tracking balance and gain adjustment

SONY OPTICAL PICK-UP 313

Abstract: S46B photo diode input 11uA output S49b a50 s15 100k 12p CD Laser pickup focus tracking dual laser optical pickup tzc 500 32 resistance CXA1992BR S36D
Contextual Info: CXA1992BR RF Signal Processing Servo Amplifier Description The CXA1992BR is a bipolar IC developed for CD player RF signal processing and servo control. Features • Automatic focus bias adjustment circuit • Automatic tracking balance and gain adjustment

B2X84C12

Abstract: MBR30100 MBR400100CT RS1005M UF5407G mur640 fst83100 MBR1535 MUR140G BC548
Contextual Info: MCC P A R T IN D E X PART NUMBER 1-5KE10 C {A) 1.5KE100(C)(A) 1-5KE11(C)(A) 1.5KE110fC)(A) 1.5KE12(C)(A) 1.5KE120(C)(A) 1-5KE13(C)(A) 1.5KE130(C)(A) 1.5KE15(C)(A) 1.5KE150(C){A) 1.5KE16(C)(A) 1.5KE160(C)(A) 1-5KE17(C)(A) 1.5KE170(C)(A) 1.5KE18(C)(A) 1.5KE180(C)(A)

E173

Contextual Info: IRIMS KSWE6. c "yKMmnnmnnmnnnnnnnnnnnnn nnmm/KMmmn r w w w w w w w w w w w w w w v v M v B B B B B B B B BBBBBBBBBBBBBQQBBQBBÉ uy\j\jj\j\j\jju\j\juru\jururu\j\j\j\j\j -4. 12[-75°o í 3a;< 000300030000009000000 \|/\^UUUUUUUUUUUUUUUUUU15UUUU U iy U U 0/ r 1 r7 n v n i N

s45d

Abstract: s26d s46d
Contextual Info: JVWIXAJVK fiP 19-2000; Rev 0; 6/96 Open-Drain SO T R eset C ircuit This d e vice perform s a single function: it asserts a reset signal w henever the V c c su p p ly voltage falls below a preset threshold or whenever m anual reset is asserted. Reset rem ains asserted for an internally program m ed

Contextual Info: S25B thru S25JR Silicon Standard Recovery Diode VRRM = 50 V - 1200 V IF =25 A Features • High Surge Capability • Types up to 1200 V VRRM DO-4 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base.

eye response curve

Abstract: S250-DO S250 smd lg diode diode s250 diode LR smd Q62703-Q1539 TA 7503 Q62703-Q1516 Q62703-Q1517
Contextual Info: L Q3E D • ISIEG ô235büS 001feilST_T LR S250 LU S250 Light Emitting Diodes T '-'V I-J f SIEMENS AKTIEN6ESELLSCHAF LED s-single and double diodes • • • • • • Backlighting of LCDs Proximity switches Touch keyboards Failure Indications on SMD PC boards

Contextual Info: S25B thru S25JR Silicon Standard Recovery Diode VRRM = 50 V - 1200 V IF =25 A Features • High Surge Capability • Types up to 1200 V VRRM DO-4 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base.

CCT108

Abstract: BYS26 lf 1458 rc2324dp transistor BU 102
Contextual Info: / o RC2324AC-E Modem Designer’s Guide Rockwell Table of Contents 1 Summary .