S25100 Search Results
S25100 Datasheets (8)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| S25100 | Microsemi | Silicon Power Rectifiers | Scan | 121.89KB | 2 | ||
| S25100 | Microsemi | Silicon Power Rectifier | Scan | 129.46KB | 2 | ||
| S25-1000 | Sussex Semiconductor | 25 AMP STANDARD RECOVERY RECTIFIER DIE | Original | 73.72KB | 3 | ||
| S25-1000 | Sussex Semiconductor | .25 TO 16 AMP STANDARD RECOVERY RECTIFIER FLIP-DIE | Original | 148.01KB | 7 | ||
| S25-1000-75 | Sussex Semiconductor | .25 TO 16 AMP STANDARD RECOVERY RECTIFIER FLIP-DIE | Original | 148.01KB | 7 | ||
| S25-1000-75 | Sussex Semiconductor | RECTIFIER DIE | Original | 88.64KB | 4 | ||
| S25-100-50 | Sussex Semiconductor | RECTIFIER DIE | Original | 88.64KB | 4 | ||
| S25-100-50 | Sussex Semiconductor | .25 TO 16 AMP STANDARD RECOVERY RECTIFIER FLIP-DIE | Original | 148.01KB | 7 |
S25100 Price and Stock
ABB Low Voltage Products and Systems 2CDS251001R0278Circuit breaker; 230/400VAC; Inom: 2A; Poles: 1; Charact: Z; 6kA |
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2CDS251001R0278 | 74 | 1 |
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ABB Low Voltage Products and Systems 2CDS251001R0034Circuit breaker; 230/400VAC; Inom: 3A; Poles: 1; Charact: C; 6kA |
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2CDS251001R0034 | 41 | 1 |
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ABB Low Voltage Products and Systems 2CDS251001R0324Circuit breaker; 230/400VAC; Inom: 32A; Poles: 1; Charact: C; 6kA |
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2CDS251001R0324 | 8 | 1 |
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ABB Low Voltage Products and Systems 2CDS251001R0405Circuit breaker; 230/400VAC; Inom: 40A; Poles: 1; Charact: B; 6kA |
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2CDS251001R0405 | 8 | 1 |
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ABB Low Voltage Products and Systems 2CDS251001R0318Circuit breaker; 230/400VAC; Inom: 3A; Poles: 1; Charact: Z; 6kA |
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2CDS251001R0318 | 4 | 1 |
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S25100 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
FQS25050F
Abstract: FQ-S15100N FQ-WD010 S25100 FQ-S25100N FQ-S25100F FQ-WD002 FQ-WN002 FQ-S25050F W4S1-05B
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Original |
ron247omron247nl-2132q180-e1-02a+10 | |
Sussex Semiconductor
Abstract: rectifier diode piv table 1N647 s16 transistor 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006
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sussex semiconductorrectifier diode piv table1n647s16 transistor+6 | |
S25400
Abstract: Sussex Semiconductor 100 Amp current 1000 volt diode s16 transistor SE 40 RECTIFIER 1N4001 1N4002 1N4003 1N4004 1N4005
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s25400sussex semiconductor100 amp current 1000 volt diodes16 transistor+6 | |
S-25C256RContextual Info: M e r o o n e s " ^ ^ u s A SbE * m 0123443 SRAM °D01Sflb tío • s e i j S-25256RS-25C256RS-251000RS-25C1000RS-2510A ■ FEATURES The S-25256R and the S-25C256R are 256K 32Kx8 -bit C M OS static RAMs. The use of a 6-transistor memory cell provides low standby current, wide operating voltage range |
OCR Scan |
d01sflbs-25256rs-25c256r32kx8+2 | |
OMRON EE-sx 412
Abstract: transistor D526 equivalent OMRON ee-sx 416 CS1W-CN118 cable OMRON sysmac c20 programming manual RELAY RM2 TR1 NJ-30 R88D-KN user manual error codes
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x302-e3-06omron ee-sx 412transistor d526 equivalentomron ee-sx 416+5 | |
FQ-AC2
Abstract: FQS20100N FQ-WD005 fqs15
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d-711547032-811-0/fax847-843-7900/fax6835-3011/fax+6 | |
100 Amp current 1000 volt diode
Abstract: Rectifier 6 amp 200 volt S25400 100 Amp current 1000 volt rectifier SE 40 RECTIFIER MPS 726 S3-500-150 S3-50-150 S25-50-50 S1-1000-150
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100 amp current 1000 volt dioderectifier 6 amp 200 volts25400100 amp current 1000 volt rectifier+6 | |
1N1199C
Abstract: 1N1205C S25160 1N1202C 1N1204C 1N1200C 1N1201C 1N1203C 1N3615 1N3616
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OCR Scan |
1n1199c1n36151n1200c1n3616+9 | |
DIODE 1N649
Abstract: SZUFD16 1.5ke series SZU16 Sussex Semiconductor 1N4172A 1N4973 SFD16 S100 p4k 20a
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szu35szz35szufd16szzd16+12 | |
s16 transistor
Abstract: 1N5804 S25400 S3-400-150 S1-400-150 S1-600-150 S1-800-150 S3-100-150 51000200 S3-500-150
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s40-600-50s16-600-50s5-600-50s16 transistor+9 | |
1N1199C
Abstract: 1N1200C R25JT 1N1202C 1n1206c 1N1201C 1N1203C 1N3615 1N3616 1N3617
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OCR Scan |
s/r251n1199c1n36151n1200c+9 | |
1N1202CContextual Info: Silicon Power Rectifier S / R 2 5 Seríes Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes J 1 h Notes: A . 1 il J I F R t 1 1 E 1. 1 0 - 3 2 UNF3A 2. Full threads within 2 1 / 2 threads 3. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is |
OCR Scan |
1n1199cs/r251n1202c | |
S25400
Abstract: se 140 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 S4020 1N5402
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s40-600-50s16-600-50s5-600-50s25400+9 | |
1N1199C
Abstract: 1N1202C 1N1200C 1N1201C 1N1203C 1N3615 1N3616 1N3617 1N3618 S2520
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OCR Scan |
s/r251n1199c1n36151n1200c+7 | |
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Contextual Info: S-251000A ►UNDER DEVELOPMENT 1M-bit CMOS static RAM The S-251000A is a 1,048,576-bit CM OS static RAM organized as 1 2 8 K X 8 , based on a 6-transistor cell design, and fabricated using Sll’s advanced CM OS process. The S -251000A features low standby current, wide |
OCR Scan |
s-251000a576-bit-251000a32-pin+1 | |
s16 transistor
Abstract: 1N4006 1N4007 1N5402 1N645 1N647 1N4001 1N4002 1N4003 1N4004
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orderin700s40-600s16-600s5-600+10 | |
S100-600
Abstract: 100 Amp current 1000 volt diode diode 1N5408 specifications 1n5408n Sussex Semiconductor 1N649 s16 transistor 1N4002 1N4003 1N4005
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specificat700s40-600s16-600s5-600+10 | |
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Contextual Info: Silicon P o w er R e c t i f i e r eries Dim Inches M in im um 1 Jh i L IL il N o te s: J t F t a i E 1. 1 0 - 3 2 UNF3A 2. Full th re a d s w ith in 2 1 / 2 th re a d s 3. S ta n d a rd P o la rity : S tu d is C a th o d e R everse P o la rity : S tu d is |
OCR Scan |
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Contextual Info: S-251001A ►UNDER DEVELOPMENT 1M-bit CMOS static RAM The S-251001A is a 1,048,576-bit CMOS static RAM organized as 128KX8, based on a 6-transistor cell design, and fabricated using Sll’s advanced CMOS process. The S-251001A features low standby current, wide |
OCR Scan |
s-251001a576-bit128kx832-pin+1 | |