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    S1P TRANSISTOR Search Results

    S1P TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA012
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TPCP8514
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 Datasheet

    S1P TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    h22e

    Contextual Info: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBT2907AW PNP Type Marking SMBT2222A/MMBT2222A s1P 1 Pin Configuration 1=B 2=E Package


    Original     		SMBT2222A/MMBT2222A SMBT2907AW SMBT2222A/MMBT2222A h22e PDF

    npn 2222 transistor

    Abstract: s1P SOT23 SMBT2222A SOT23 SMBT2222A SMBT2907A MARKING s1P MARKING 1B SOT23 EHN00056
    Contextual Info: SMBT2222A NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings


    Original     		SMBT2222A SMBT2907A VPS05161 2222/A EHP00744 EHP00745 Jul-11-2001 npn 2222 transistor s1P SOT23 SMBT2222A SOT23 SMBT2222A SMBT2907A MARKING s1P MARKING 1B SOT23 EHN00056 PDF

    br 2222 npn

    Abstract: SMBT2222A SMBT2907A
    Contextual Info: SMBT2222A NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings


    Original     		SMBT2222A SMBT2907A VPS05161 2222/A EHP00744 EHP00745 May-29-2001 br 2222 npn SMBT2222A SMBT2907A PDF

    h11E

    Contextual Info: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBT2907A / MMBT2907A PNP • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P


    Original     		SMBT2222A/MMBT2222A SMBT2907A MMBT2907A SMBT2222A/MMBT2222A h11E PDF

    SMBT2907AW

    Abstract: MARKING s1P smbt2222a sot23 marking code S1p MARKING BCW66 77 ic marking code transistor marking code 24 24 marking code transistor transf SMBT2222A SOT23
    Contextual Info: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBT2907AW PNP 1 • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P Pin Configuration


    Original     		SMBT2222A/MMBT2222A SMBT2907AW SMBT2222A/MMBT2222A BCW66 SMBT2907AW MARKING s1P smbt2222a sot23 marking code S1p MARKING BCW66 77 ic marking code transistor marking code 24 24 marking code transistor transf SMBT2222A SOT23 PDF

    s1P SOT23

    Abstract: 619 SOT23-3 h11e
    Contextual Info: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBT2907AW PNP 1 • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P Pin Configuration


    Original     		SMBT2222A/MMBT2222A SMBT2907AW SMBT2222A/MMBT2222A s1P SOT23 619 SOT23-3 h11e PDF

    MARKING s1P

    Contextual Info: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2907A PNP 2 1 Type SMBT2222A/ MMBT2222A Marking s1P 1=B Pin Configuration 2=E 3=C VPS05161


    Original     		SMBT2222A/ MMBT2222A SMBT2907A VPS05161 MARKING s1P PDF

    Contextual Info: FJX2222A NPN Epitaxial Silicon Transistor Features • General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 3 Marking S1P 2 1 SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol


    Original     		FJX2222A 325mW OT-323 PDF

    transistor s1p

    Abstract: MARKING S1P S1P transistor FJX2222A ESBC Fairchild dual NPN silicon transistor
    Contextual Info: FJX2222A NPN Epitaxial Silicon Transistor Features • General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 3 Marking S1P 2 1 SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol


    Original     		FJX2222A 325mW OT-323 transistor s1p MARKING S1P S1P transistor FJX2222A ESBC Fairchild dual NPN silicon transistor PDF

    npn 2222 transistor

    Abstract: MMBT2222A SMBT2222A SMBT2907A MARKING s1P
    Contextual Info: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2907A PNP 2 1 Type SMBT2222A/ MMBT2222A Marking s1P 1=B Pin Configuration 2=E 3=C VPS05161


    Original     		SMBT2222A/ MMBT2222A SMBT2907A VPS05161 2222/A EHP00744 EHP00745 npn 2222 transistor MMBT2222A SMBT2222A SMBT2907A MARKING s1P PDF

    Contextual Info: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2907A PNP 2 1 Type SMBT2222A/ MMBT2222A Marking s1P 1=B Pin Configuration 2=E 3=C VPS05161


    Original     		SMBT2222A/ MMBT2222A SMBT2907A VPS05161 PDF

    MARKING s1P

    Abstract: 99V0
    Contextual Info: SMBT2222A NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings


    Original     		SMBT2222A SMBT2907A VPS05161 Nov-30-2001 2222/A EHP00742 EHP00743 MARKING s1P 99V0 PDF

    Motorola transistors MRF

    Abstract: motorola MRF agilent ads balun LDMOS push pull EB212 MRF19125 MRF21180
    Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by EB212/D SEMICONDUCTOR ENGINEERING BULLETIN EB212 Using Data Sheet Impedances for RF LDMOS Devices Prepared by: Darin Wagner Motorola Semiconductor Products Sector Freescale Semiconductor, Inc.


    Original     		EB212/D EB212 Motorola transistors MRF motorola MRF agilent ads balun LDMOS push pull EB212 MRF19125 MRF21180 PDF

    agilent ads balun

    Abstract: EB212 MRF19125 MRF21180 J493 advanced design system
    Contextual Info: Freescale Semiconductor Engineering Bulletin EB212 Rev. 0, 1/2004 Using Data Sheet Impedances for RF LDMOS Devices By: Darin Wagner INTRODUCTION This document explains the format used by Freescale for presenting LDMOS impedance information for both single - ended and push - pull devices on RF Power data


    Original     		EB212 agilent ads balun EB212 MRF19125 MRF21180 J493 advanced design system PDF

    transistor s1p

    Abstract: S1P transistor S1p MARKING F1 SOT-323
    Contextual Info: FJX2222A FJX2222A General Purpose Transistor 2 1 NPN Epitaxial Silicon Transistor SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCES Collector-Emitter Voltage


    Original     		FJX2222A OT-323 transistor s1p S1P transistor S1p MARKING F1 SOT-323 PDF

    2222 NPN

    Abstract: br 2222 npn npn 2222 2222a 2222 2907 pnp 2222 A DSA0032624 equivalent of 2222 NPN Q68000-A6473
    Contextual Info: NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A High DC current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Complementary types: SMBT 2907, SMBT 2907 A PNP ● Type Marking Ordering Code (tape and reel) Pin Configuration


    Original     		Q68000-A6481 Q68000-A6473 OT-23 2222 NPN br 2222 npn npn 2222 2222a 2222 2907 pnp 2222 A DSA0032624 equivalent of 2222 NPN Q68000-A6473 PDF

    MARKING s1P

    Abstract: FJX2222A transistor s1p
    Contextual Info: FJX2222A FJX2222A General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		FJX2222A 325mW OT-323 MARKING s1P FJX2222A transistor s1p PDF

    2222a

    Abstract: br 2222 npn 2222 A npn 2222 Q68000-A6473 Q68000-A6481 tr 2222 2222av marking code sot-23 697 NPN transistors sot-23 26
    Contextual Info: NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A High DC current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Complementary types: SMBT 2907, SMBT 2907 A PNP ● 2 3 1 Type Marking Ordering Code (tape and reel) Pin Configuration


    Original     		Q68000-A6481 Q68000-A6473 OT-23 2222a br 2222 npn 2222 A npn 2222 Q68000-A6473 Q68000-A6481 tr 2222 2222av marking code sot-23 697 NPN transistors sot-23 26 PDF

    2222a

    Abstract: npn 2222 2222 NPN br 2222 npn 2222 A 2222
    Contextual Info: NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A High DC current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Complementary types: SMBT 2907, SMBT 2907 A PNP ● Type Marking Ordering Code (tape and reel) Pin Configuration


    Original     		Q68000-A6481 Q68000-A6473 OT-23 2222a npn 2222 2222 NPN br 2222 npn 2222 A 2222 PDF

    MARKING s1P

    Abstract: FJX2222A transistor s1p
    Contextual Info: FJX2222A FJX2222A 3 General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		FJX2222A 325mW OT-323 75opment. MARKING s1P FJX2222A transistor s1p PDF

    MARKING s1P

    Abstract: FJX2222A
    Contextual Info: FJX2222A FJX2222A 3 General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		FJX2222A 325mW OT-323 75ner MARKING s1P FJX2222A PDF

    CHT2222APT

    Abstract: transistor s1p
    Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHT2222APT SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * Low voltage Max.=40V . * High saturation current capability.


    Original     		CHT2222APT OT-23 OT-23) 600mA) 200ns CHT2222APT transistor s1p PDF

    transistor s1p

    Abstract: CHT4401PT SOT23 timer ic S1p MARKING
    Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHT4401PT SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SOT-23 * Low voltage Max.=40V . * High saturation current capability.


    Original     		CHT4401PT OT-23 600mA) 200ns transistor s1p CHT4401PT SOT23 timer ic S1p MARKING PDF

    Contextual Info: SIEMENS NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: SMBT 2907, SMBT 2907 A PNP Type Marking Ordering Code (tape and reel) PinC Contigui ation


    OCR Scan     		Q68000-A6481 Q68000-A6473 OT-23 2222/A fi235bD5 0155S2S a235b05 012552b PDF