S1M TP Search Results

Contextual Info: S1D-Q … S1M-Q S1D-Q … S1M-Q Surface Mount Silicon Rectifier Diodes AEC-Q101 Silizium-Gleichrichterdioden für die Oberflächenmontage (AEC-Q101) Version 2013-10-21 Nominal current – Nennstrom ± 0.2 2.2 ± 0.2 2.1 ± 0.2 5 0.15 Type Typ 4.5 1.5 ±0.1

s1M SOT-23

Abstract: Q68000-A6475 Q68000-A6476
Contextual Info: NPN Silicon Darlington Transistors SMBTA 13 SMBTA 14 High DC current gain ● High collector current ● Collector-emitter saturation voltage ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBTA 13 SMBTA 14 s1M s1N Q68000-A6475

MMBTA13

Abstract: MMBTA14 SMBTA13 SMBTA14 s1M MMBTA13
Contextual Info: SMBTA13/ MMBTA13, SMBTA14/ MMBTA14 NPN Silicon Darlington Transistors 3
High DC current gain
High collector current
Low collector-emitter saturation voltage 2 1 Pin Configuration VPS05161 Type Marking Package SMBTA13/ MMBTA13 s1M 1=B 2=E 3=C SOT23 SMBTA14/ MMBTA14

Contextual Info: SMBTA13/ MMBTA13, SMBTA14/ MMBTA14 NPN Silicon Darlington Transistors 3
High DC current gain
High collector current
Low collector-emitter saturation voltage 2 1 Pin Configuration VPS05161 Type Marking Package SMBTA13/ MMBTA13 s1M 1=B 2=E 3=C SOT23 SMBTA14/ MMBTA14

intel iPLDLV22V10

Abstract: 29049
Contextual Info: in te l AIOWAMKSB 0[M F (S1M A ¥0®M ÎPLDLV22V10-5 LOW VOLTAGE, ELECTRICALLY ERASABLE 10-MACRQCELL CMOS PLD Low Voltage, Low Current, High Speed Upgrade to BiCMOS/Bipolar 22V10 and CMOS Equivalents 10 Macrocells with Programmable I/O Architecture (Registered/

Contextual Info: SMBTA13/ MMBTA13, SMBTA14/ MMBTA14 NPN Silicon Darlington Transistors 3
High DC current gain
High collector current
Low collector-emitter saturation voltage 2 1 Pin Configuration VPS05161 Type Marking Package SMBTA13/ MMBTA13 s1M 1=B 2=E 3=C SOT23 SMBTA14/ MMBTA14

darlington sot23 npn

Abstract: S1M sot23 SMBTA13 SMBTA14
Contextual Info: SMBTA13, SMBTA14 NPN Silicon Darlington Transistors 3
High DC current gain
High collector current
Low collector-emitter saturation voltage 2 1 Type Marking Pin Configuration SMBTA13 s1M 1=B 2=E 3=C SOT23 SMBTA14 s1N 1=B 2=E 3=C SOT23 VPS05161 Package

Contextual Info: SMBTA13, SMBTA14 NPN Silicon Darlington Transistors 3
High DC current gain
High collector current
Low collector-emitter saturation voltage 2 1 Type Marking Pin Configuration SMBTA13 s1M 1=B 2=E 3=C SOT23 SMBTA14 s1N 1=B 2=E 3=C SOT23 VPS05161 Package

Contextual Info: SMBTA 13, SMBTA 14 NPN Silicon Darlington Transistors 3
High DC current gain
High collector current
Low collector-emitter saturation voltage 2 1 Type Marking Pin Configuration SMBTA 13 s1M 1=B 2=E 3=C SOT-23 SMBTA 14 s1N 1=B 2=E 3=C SOT-23 VPS05161 Package

c 2562

Abstract: SN74ALS666 SN74ALS667 SN54ALS666
Contextual Info: SN54ALS666, SN54ALS667. SN74ALS666. SN74ALS667 8-BIT D TYPE TRANSPARENT READ BACK LATCHES W IT H 3 STATE O UTPUTS D 2 8 5 5 , JUNE 1 9 8 4 - S1M 54ALS666 J T P AC KA G E SN74ALS666 . . D W OR N T PAC KAG E 3-S tate l/O-Type Read-Back Inputs Bus-Structured Pinout

Contextual Info: Sensors Infrared light emitting diode, side-view mold type SIM-20ST The S1M-20ST is a GaAs infrared light em itting diode housed in clear plastic. Side em ission with a <f> 1.85 mm lens and a 950 nm spectrum suitable for silicon detectors m ake it an ideal light source for sensors. It is particularly suited

Contextual Info: DENSE-PAC MICROSYSTEMS 32 Megabit C M O S SRAM D P S1M X32M L/D PS1M X32M W PRELIMINARY DESCRIPTION: PIN-OUT DIAGRAM The D P S 1 M X 3 2 M L /D P S 1 M X 3 2 M W is a 1 M e g x 32 high density, high-speed Static Random Access M em ory SRAM module, intended

Contextual Info: MCC TM Micro Commercial Components S1A THRU S1M
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Lead Free Finish/Rohs Compliant Note1 ("P"Suffix designates Compliant. See ordering information)

Contextual Info: MCC TM Micro Commercial Components S1A THRU S1M
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • x 1 Amp Silicon Rectifier 50 to 1000 Volts For Surface Mount Applications

S1M a4

Contextual Info: a W M S1M 1-XD EX I/I/HITE M I C R O E L E C T R O N I C S IM x l SRAM MONOLITHIC ADVANCED* FEATURES • PIN CONFIGURATION TOP VIEW 32 3 VCC A11 C 2 31 D N C A I2 C 3 NCC 4 29 H as 28 D A7 A15C 7 26 D A 5 27 H A6 NCC 8 25 □ A4 A16C 9 A 1 7 C 10 24 H A 3

Philips date CODE MARKING

Abstract: SMD MARKING CODE S1 DO214AC SMD MARKING CODE s1k diode SMD MARKING CODE s1j S1J taiwan smd diode s1B MCD802 MARKING CODE S1M SMA Philips MARKING CODE smd Product type marking code 039
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 S1 series SMA controlled avalanche rectifiers Product specification 2000 Feb 14 Philips Semiconductors Product specification SMA controlled avalanche rectifiers S1 series FEATURES DESCRIPTION • Glass passivated

diode S1J

Abstract: S1J taiwan S1m diode s1j diode s1m tp diode s1m sma diode s1g sma MCD801 DIODE S1M DO-214AC VS1M
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 S1 series SMA controlled avalanche rectifiers Product specification 2000 Feb 14 Philips Semiconductors Product specification SMA controlled avalanche rectifiers S1 series FEATURES DESCRIPTION • Glass passivated

Contextual Info: FS1MM SURFACE MOUNT GLASS PASSIVATED RECTIFIER REVERSE VOLTAGE – 1000 Volts FORWARD CURRENT – 1 Ampere FEATURES DO-222AA • Very low profile package – 0.80mm • High efficiency • Low forward voltage drop, low power loss • For use in low voltage, high frequency inverters,

230v dc 8a rectifier diode

Contextual Info: Application Note 1884 ISL6731AEVAL1Z and ISL6731BEVAL1Z: Boost CCM PFC for 300W Universal Input Adaptors Introduction Design Specifications This application note describes the design and implementation of a 390V, 300W, Continuous Conduction Mode CCM Boost PFC converter using the ISL6731A,

Contextual Info: FS1MM SURFACE MOUNT GLASS PASSIVATED RECTIFIER REVERSE VOLTAGE – 1000 Volts FORWARD CURRENT – 1 Ampere FEATURES DO-222AA • Very low profile package – 0.80mm • High efficiency • Low forward voltage drop, low power loss • For use in low voltage, high frequency inverters,

SIC 330n

Abstract: ISL6730 S1m diode
Contextual Info: Application Note 1830 Author: Alan Yu ISL6730AEVAL1Z and ISL6730CEVAL1Z: Boost CCM PFC for 90W Universal Input Adaptors Introduction Design Specifications This application note describes the design and implementation of a 390V, 90W, Continuous Conduction Mode CCM Boost PFC

IN5406 diode

Abstract: B32672P4684K TDK common mode choke film diode s1m c7 diode in5406
Contextual Info: Application Note 1876 Author: Alan Yu ISL6730BEVAL1Z and ISL6730DEVAL1Z: Boost CCM PFC for 300W Universal Input Adaptors Introduction Design Specifications This application note describes the design and implementation of a 390V, 300W, Continuous Conduction Mode CCM Boost

Contextual Info: M/HITE /MICROELECTRONICS 1M x32 SRAM 3.3V MODULE W S1M32V-XG3X ADVANCED* FEATURES • A c c e s s T im e s of 17, 20, 25ns ■ Low Pow er CM OS ■ 84 lead, 28mm CQFP, Packag e 511 ■ Built-in Decoupling Caps and M u ltip le Ground Pins fo r Low Noise Operation

S1M A3

Contextual Info: WS1M8-XXX Hi-REUASIUTY PRODUCT 2x512Kx8 DUALITHIC SRAM FEATURES O rg a n iz e d as t w o b a n k s o f 5 1 2 K x 8 • A c c e s s T i m e s 17, 2 0, 2 5, 3 5, 4 5, 5 5 n s C o m m e r c ia l, I n d u s tr ia l a n d M i l i t a r y T e m p e r a t u r e R a nges