S1A 57 Search Results

Contextual Info: ♦ • ♦ • ♦ • P • R • E • L • I • IVI • I • N ♦ A • R • Y ♦ • ♦ ♦ • • S1A THRU S1J SURFACE MOUNT RECTIFIER VOLTAGE - 50 to 600 Volts CU R R EN T - 1.0 Am peres FEATURES ♦ ♦ ♦ ♦ ♦ For surface mounted applications

Contextual Info: PI5V330S Low On-Resistance Wideband/Video Quad 2-Channel Mux/DeMux Features Description • • • • • • • • • High-performance solution to switch between video sources Wide bandwidth: 570 MHz typical Low On-Resistance: 5Ω (typical) Low crosstalk at 10 MHz: –80dB

Contextual Info: 0.5 Ω CMOS 1.65 V to 3.6 V Dual SPDT/2:1 MUX ADG836L FEATURES FUNCTIONAL BLOCK DIAGRAM 0.5 Ω typical on resistance 0.8 Ω maximum on resistance at 125°C 1.65 V to 3.6 V operation Automotive temperature range: –40°C to +125°C Guaranteed leakage specifications up to 125°C

Contextual Info: 0.5 Ω CMOS 1.65 V TO 3.6 V Dual SPDT/2:1 MUX ADG836 FEATURES ADG836 0.5 Ω typical on resistance 0.8 Ω maximum on resistance at 125°C 1.65 V to 3.6 V operation Automotive temperature range: –40°C to +125°C High current carrying capability: 300 mA continuous

S1A 57

Contextual Info: Preliminary Technical Data FEATURES +1.8 V to +5.5 V operation Ultra-Low On resistance: 0.5 Ω typical 0.8 Ω max at 5V supply Excellent audio performance, ultralow Distortion: 0.01 Ω typical 0.2 Ω max Ron flatness High current carrying capability: 400 mA continuous

ADG836L

Abstract: ADG836LYRM ADG836LYRM-REEL ADG836LYRM-REEL7 MO-187BA RM-10
Contextual Info: 0.5 Ω CMOS 1.65 V to 3.6 V Dual SPDT/2:1 MUX ADG836L FEATURES FUNCTIONAL BLOCK DIAGRAM 0.5 Ω typical on resistance 0.8 Ω maximum on resistance at 125°C 1.65 V to 3.6 V operation Automotive temperature range: –40°C to +125°C Guaranteed leakage specifications up to 125°C

ADG836

Abstract: ADG836YRM ADG836YRM-REEL ADG836YRM-REEL7 MO-187-BA RM-10 ADG836YRMZ
Contextual Info: 0.5 Ω CMOS 1.65 V TO 3.6 V Dual SPDT/2:1 MUX ADG836 FEATURES ADG836 0.5 Ω typical on resistance 0.8 Ω maximum on resistance at 125°C 1.65 V to 3.6 V operation Automotive temperature range: –40°C to +125°C High current carrying capability: 300 mA continuous

LT1060

Abstract: LT-1060 4th-order active bandpass filter 400KHz tlc106 MOO14 TLC1060 LTC1060AMJ LTC1060 LTC1060ACN LTC1060CN
Contextual Info: LTC1060 Universal Dual Filter Building Block U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Guaranteed Filter Specification for ±2.37V and ±5V Supply Operates Up to 30kHz Low Power and 88dB Dynamic Range at ±2.5V Supply Center Frequency Q Product Up to 1.6MHz

MOO14

Contextual Info: LTC1060 Universal Dual Filter Building Block FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Guaranteed Filter Specification for ±2.37V and ±5V Supply Operates Up to 30kHz Low Power and 88dB Dynamic Range at ±2.5V Supply Center Frequency Q Product Up to 1.6MHz

DG636EN-T1-E4

Abstract: DG636E TSSOP14 DG636
Contextual Info: New Product DG636 Vishay Siliconix 0.5 pC Charge Injection, 100 pA Leakage, Dual SPDT Analog Switch DESCRIPTION FEATURES The DG636 is an analog CMOS, dual SPDT switch, designed to operate from a + 2.7 V to + 12 V single supply or from ± 2.7 V to ± 5.0 V, dual supplies. The DG636 is fully

117pF

Abstract: DG636E DG636
Contextual Info: New Product DG636 Vishay Siliconix 0.5 pC Charge Injection, 100 pA Leakage, Dual SPDT Analog Switch DESCRIPTION FEATURES The DG636 is an analog CMOS, dual SPDT switch, designed to operate from a + 2.7 V to + 12 V single supply or from ± 2.7 V to ± 5.0 V, dual supplies. The DG636 is fully

DG636

Abstract: TSSOP14
Contextual Info: DG636 Vishay Siliconix 0.5 pC Charge Injection, 100 pA Leakage, Dual SPDT Analog Switch DESCRIPTION FEATURES The DG636 is an analog CMOS, dual SPDT switch, designed to operate from a + 2.7 V to + 12 V single supply or from ± 2.7 V to ± 5.0 V, dual supplies. The DG636 is fully

SR704U

Abstract: VDMOS S1A 57
Contextual Info: polyfet rf devices SR704U General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

ADG836

Abstract: ADG836YCP ADG836YCP-REEL ADG836YCP-REEL7 ADG836YRM ADG836YRM-REEL ADG836YRM-REEL7 RM-10
Contextual Info: 0.5  CMOS 1.65 V TO 3.6 V Dual SPDT/2:1 MUX ADG836 FEATURES 0.5  Typical On Resistance 0.8  Maximum On Resistance at 125°C 1.65 V to 3.6 V Operation Automotive Temperature Range: –40°C to +125°C High Current Carrying Capability: 300 mA Continuous

A11312

Abstract: DG636E DG636 dg636en-t1-e4
Contextual Info: DG636 Vishay Siliconix 0.5 pC Charge Injection, 100 pA Leakage, Dual SPDT Analog Switch DESCRIPTION FEATURES The DG636 is an analog CMOS, dual SPDT switch, designed to operate from a + 2.7 V to + 12 V single supply or from ± 2.7 V to ± 5.0 V, dual supplies. The DG636 is fully

DG636E

Abstract: DG636
Contextual Info: DG636 Vishay Siliconix 0.5 pC Charge Injection, 100 pA Leakage, Dual SPDT Analog Switch DESCRIPTION FEATURES The DG636 is an analog CMOS, dual SPDT switch, designed to operate from a + 2.7 V to + 12 V single supply or from ± 2.7 V to ± 5.0 V, dual supplies. The DG636 is fully

DG9636

Abstract: S1A 57
Contextual Info: DG9636 Vishay Siliconix Dual SPDT Analog Switch DESCRIPTION FEATURES The DG9636 is a CMOS, dual SPDT analog switch designed to operate from + 2.7 V to + 12 V, single supply. All control logic inputs have a guaranteed 1.65 V logic HIGH threshold when operation from a + 12 V power supply. This makes the

SR704U

Contextual Info: polyfet rf devices SR704U General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Contextual Info: polyfet rf devices SR704U General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Contextual Info: polyfet rf devices SR704U General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Contextual Info: A\ INCH MM .156 .44 7 .487 .570 .614 .625 1.247 1.375 1.687 2.989 3.96 11.35 12.37 14.48 15.60 15.88 3Ü.67 34.93 42.85 75.92 DATA CONTAINED IN THIS DOCUMENT IS PROPRIETARY TO TROMPETER ELECTRONICS INC. AND SHALL NOT BE DISCLOSED, COPIED OR USED FOR PROCUREMENT ORMANUFACTURE WITHOUT EXPRESS WRITTEN PERMISSION.

DG636

Contextual Info: DG636 Vishay Siliconix 0.5 pC Charge Injection, 100 pA Leakage, Dual SPDT Analog Switch DESCRIPTION FEATURES The DG636 is an analog CMOS, dual SPDT switch, designed to operate from a + 2.7 V to + 12 V single supply or from ± 2.7 V to ± 5.0 V, dual supplies. The DG636 is fully

DG636

Contextual Info: DG636 Vishay Siliconix 0.5 pC Charge Injection, 100 pA Leakage, Dual SPDT Analog Switch DESCRIPTION FEATURES The DG636 is an analog CMOS, dual SPDT switch, designed to operate from a + 2.7 V to + 12 V single supply or from ± 2.7 V to ± 5.0 V, dual supplies. The DG636 is fully

DG636E

Abstract: DG636
Contextual Info: DG636 Vishay Siliconix 0.5 pC Charge Injection, 100 pA Leakage, Dual SPDT Analog Switch DESCRIPTION FEATURES The DG636 is an analog CMOS, dual SPDT switch, designed to operate from a + 2.7 V to + 12 V single supply or from ± 2.7 V to ± 5.0 V, dual supplies. The DG636 is fully