S150A6 Search Results
S150A6 Datasheets Context Search
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Contextual Info: TY.S150A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 150 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM A (1) C (2) |
Original |
s150a6ty056s150a6otty080s150a6outy093s150a6ou+2 | |
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Contextual Info: TY.S150A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 150 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM A (1) C (2) |
Original |
s150a6ty056s150a6ot2002/95/ec2011/65/eu+2 | |
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Contextual Info: TY.S150A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 150 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM A (1) C (2) |
Original |
s150a6ty056s150a6otty080s150a6outy093s150a6ou+4 |