S13V Search Results
S13V Price and Stock
TE Connectivity 2MM-HSD-S13-VS-00-F-TRP13P 2MM SHRD HDR SRVT SMD 0.1AU TRW/CAP MOQ Reduction |
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2MM-HSD-S13-VS-00-F-TRP |
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TE Connectivity 2MM-HSP-S13-VT-01-T-TRP13P 2MM PL HDR SRVT 2.2 SN TR W/CAP MOQ Reduction |
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2MM-HSP-S13-VT-01-T-TRP |
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TE Connectivity 2MM-HSP-S13-VT-02-M-TRP13P 2MM PL HDR SRVT 2.8 0.38AU TR W/CAP MOQ Reduction |
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2MM-HSP-S13-VT-02-M-TRP |
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TE Connectivity 2MM-R-S13-VT-02-F-TB13P 2MM B-B REC SRVT 2.7 0.1AU TB MOQ Reduction |
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2MM-R-S13-VT-02-F-TB |
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TE Connectivity 2MM-HSP-S13-VT-02-M-TB13P 2MM PL HDR SRVT 2.8 0.38AU TB MOQ Reduction |
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2MM-HSP-S13-VT-02-M-TB |
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S13V Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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L79H05
Abstract: L79K L79M12
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l79m00t-sk-fi-13l79m05l79m10+8 | |
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Contextual Info: ooozavmc A3a sost dm za A3U JO L:8 133HS ONiMVda y^oisno 31V3S 61100 UU91S< 0 1 Q 3 1 0 ld lS 3 d on 0NiMvya 3QOO 30V3 LV tO O Ll - f l l 3 Z IS 03dS yoioi^ {a33V^0Vd 3dVl 13^00d ‘sav31 3NIM lino ‘I0[t9'0]^0' ‘ivony^A ‘Aiamssv 3i0vid303y U 0 l| D J 0 d j0 3 |
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133hs31v3suu91ssav31+6 | |
PQ09SZ
Abstract: PQ05SZ1 PQ05SZ1T PQ05SZ1U PQ05SZ5 PQ05SZ5T PH107 Low Power-Loss Voltage Regulators precision Absolute Value Circuit
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pq05sz5/51/5t/5pq05sz1/11/1t/1upq05sz5/51/5t/5upq05sz5/pq05sz1+13 | |
dt5 tuner module
Abstract: op102 ITT Semiconductors D78P0 D0122 ddt237
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upd78023upd78024upd78p024ieu-1373a+12 | |
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Contextual Info: U / 0 S08t LJO L 133HS 0 8 31V0S t001918-g o o — 01 Q310ldlS3d aaiAoisno o n i mv j o 03 oa A3d ONONIM VdO 3Q03 30VO V - T [CL-0]S00- 1H0I3M LV tOO Ll ~ f l l 3ZIS 03dS NOLLVOIIddV joioia ‘savaa onim Z Z f L—8 0 L u n o ‘ao[t9'o]320' ‘IVOliy^A ‘A3aA3SSV 330Vld303a |
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t001918-g310ldls3d330vld303a09v09+6 | |
EIA364
Abstract: EIA-364
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10012-leia364eia-364 | |
L348
Abstract: ddr 200pin SO DIMM
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26jun09ul94v-0320pcs31mar2000+2 | |
vmi x50
Abstract: lzp 1045
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mil-std-45662vmi x50lzp 1045 | |
001-2S806
Abstract: D19D 2s806 11BD6 X310N n3ss
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x310n031vtx310w19w3ssv+11 | |
KM736V789Contextual Info: KM736V789 128Kx36 Synchronous SRAM 128Kx36-Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. • 2 Stage Pipelined operation with 4 Burst. • On-Chip Address Counter. • Self-Timed Write Cycle. • On-Chip Address and Control Registers. |
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km736v789100-tqfp-1420a128kx36 | |
TMS27256Contextual Info: T TE XA S INS TR UC/UP 2SE D 0^1722 QGV'ìSMT I TMS370CX32 8 -BIT MICROCONTROLLERS T -V 7 -/7 -0 * FEBRUARY 1990 • • TMS370 Configured Microcontroller — PACT Module — A/D Module — Data EEPROM Module FN AND FJ PACKAGES (TOP VIEW) LU (/} 00 S f f l l O ' f O N i - Q r lu a . Û . O L Q . £ L C L Q . a . > < Û tr o o o o o o o o P o |
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tms370cx32tms370tms27256 | |
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Contextual Info: TOSHIBA • TCmBMÛ 00EÔS3Ô 143 ■ THM72V2010AG/ATG-60/70 PRELIMINARY 2,097,152 WORDS X 72 BIT DYNAMIC RAM MODULE Description The THM72V2010AG/ATG is a 2,097,152 words by 72 bits dynamic RAM moduie which assembled 9 pcs of TC51V17800ANJ/ ANT on the printed circuit board. This module is optimized for application to the systems which are required high density and |
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thm72v2010ag/atg-60/70thm72v2010ag/atgtc51v17800anj/095mw+6 | |
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Contextual Info: 9NIMVHQ 0 3 3 N I9 N 3 /° Jd 00 d 3S 9 A 3d 62 1- 9d I Jo I;I | 133HS A3 a O N IM Vda 31V 3S HBW O lSflD 3 3 0 H oi 2 ON £>N I wv d d y1S 3a v 3CIOO 39VO 1-801 33d S I D f K l Od d a 3 S I Vd H 9IH d 3QV3 H QdVO 6 $ 9 j s >|3 0 j g Od •p 3WVN ’ A '9 |
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133hs1s31v1nih33ni9n133fgns+6 | |
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Contextual Info: Vm to -s-f 96ES5IS ivoNsatJosra mu 138 mm sod N33H3 f ia ’SIN *d n i s a m x s n a N i u3annN snwwq 3iva Jfl EAOMdctf Nnwua 3TVDS u i o o ’o r a o j ^ i s o d ^ o a u u o o ’m m m noLwinsiw Liieoj sio 'Ot Tonvnma . 3 IN 0 H X IS 0 J NMVd 310H 13V1N00 |
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n33h313v1n0096csxss39wm+4 | |
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TNY 176 PN EQUIVALENT
Abstract: AY-5-8100 TFK 7 segment displays AY5-8100 7-segment display tfk FTC S211 TNY 177 PN EQUIVALENT saa1130 TNY 176 PN AY-3-8500
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tny 176 pn equivalentay-5-8100tfk 7 segment displaysay5-8100+6 | |
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Contextual Info: ooozavme A3a sost dm tH A3èl 3 JO L 08 31V3S 133HS 9 01 6 ^ Q 3 1 0 ld lS 3 d O N iM V d a 9 6L L 00 LV ^ on 0 N iM v y a 3QOO 30V 3 U 0 l| D J 0 d j0 3 S O IU O jp 9 |3 03dS ddanriN Id V d L—9601915 2-9601915 5-9601915 t- 9 6 0 1 9 1 5 5-9601915 9-9601915 |
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sav313i0vid303ys310nvsn0isn31a+1 | |
90n33
Abstract: AN313V IH33
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y39wnn13v1nooslalh003ia33a33+6 | |
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Contextual Info: THM3610B0AS/ASG -70/80 1,048,576 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM3610B0AS/ASG is a 1,048,576 word by 36 bit dynamic RAM module which is assembled with 2TC5118180AJ devices on the printed circuit board. This module can be as well used as 2,097,152 word by 16 |
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thm3610b0as/asg2tc5118180aj3inou133139sv/sv08019+4 | |
tr-611Contextual Info: q4340 This is to certify that the evaluation described herein was designed and executed by personnel of Contech Research, Inc. It was performed with the concurrence of Samtec Corporation of New Albany, IN, who was the test sponsor. All equipment and measuring instruments used during testing were |
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q4340mil-std-45662tr-611 | |
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Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2011 1 2 RELEASED FOR PUBLICATION LOC DIST R E V IS IO N S ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION, p DESCRIPTION LTR N1 DWN DATE REVISED ECR-1 1 - 0 1 6 2 5 1 , E C R - 1 1-0241 25 GOLD FLASH RANGE ON SOLDERING AREA |
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FX-102
Abstract: MS-212 TCL04 TRANSISTOR BC 187 mPD78023
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mpd78024mpd78023mpd78p024ieu-1373a+6 | |
15Y SMD TRANSISTOR
Abstract: SSM2044 free transistor equivalent book 2sc DAC02 PMI SSM-2045 1V120 1N9148 ssm2100 sharp laser diodes SSM2142 SPICE MODEL
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ssm-201315y smd transistorssm2044free transistor equivalent book 2sc+7 | |
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Contextual Info: Housing Model Nc. C ir c uits Q -•/1 hag D menstons mm<n. Standard type Retainer mountable 2 XAP-Q2Y-1 XARP-02V 3 XAP-Q3Y-1 XARP-03V 5.0 .197] 4 XAP-04V-1 X ARP-04V 7.5{ .295] 5 XAP-05V-1 XARP-05V 6 XAP-06V-1 XARP-06V 7 XAP-07V-1 XARP-07V F=sr=r S'j'd ir: |
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Contextual Info: MAY 30,1997 TEST REPORT #97144 QUALIFICATION TESTING SOLC/TOLC SAMTEC CORPORATION APPROVED BY: MAX PEEL PRESIDENT AND DIRECTOR OF ADVANCED RESEARCH CONTECH RESEARCH, INC. L ~-Jqiijzii$ Contech Research CERTIFICATION This is to certify that the evaluation described herein was |
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10012-l97144rf | |