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    S13018 Search Results

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    ECS International Inc ECS-130-18-33-JGN-TR

    Crystals 13MHz 18pF 20ppm -40C +85C
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    Mouser Electronics ECS-130-18-33-JGN-TR
    • 1 $0.50
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    • 10000 $0.27
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    ECS International Inc ECS-130-18-5PLX-AGN-TR

    Crystals CRYSTAL 25.000 MHZ 18PF SMD,CSM-7X,+/-30ppm,+/-30ppm,18pF,30 Ohm,Fundamental,-40C - 85C,HC49/US,0.449" L x 0.189" W (11.40mm x 4.80mm),0.126" (3.20mm)
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    Mouser Electronics ECS-130-18-5PLX-AGN-TR
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    Amphenol Corporation TS13018C0000G

    Pluggable Terminal Blocks 762 TB PLU PLU WF HOOK/E
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    Mouser Electronics TS13018C0000G
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    Amphenol Corporation TS13018A0000G

    Pluggable Terminal Blocks 762 TB PLU PLU HOOK/E
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    Mouser Electronics TS13018A0000G
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    Amphenol Corporation TS13018B0000G

    Pluggable Terminal Blocks 762 TB PLU PLU HOOK/BACK
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    Mouser Electronics TS13018B0000G
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    S13018 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SPICE Device Model Si4156DY www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    Si4156DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    sic780

    Abstract: s13018 D22 diode marking code E22/6/AT22LV10/Q62901/MAX4936ACTO -datasheet
    Contextual Info: SiC780, SiC780A Vishay Siliconix Integrated DrMOS Power Stage DESCRIPTION FEATURES The SiC780 is an integrated power stage solution optimized for synchronous buck applications offering high current, high efficiency and high power density. Packaged in Vishay's


    Original
    SiC780, SiC780A SiC780 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A s13018 D22 diode marking code E22/6/AT22LV10/Q62901/MAX4936ACTO -datasheet PDF

    Contextual Info: SPICE Device Model Si4154DY www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    Si4154DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF