S12308 Search Results
S12308 Price and Stock
Amphenol Corporation HS1230800000G- Bulk (Alt: HS1230800000G) |
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HS1230800000G | Bulk | 2,020 |
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HS1230800000G | 16 Weeks | 2,020 |
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Amphenol Corporation HS1230810000G- Bulk (Alt: HS1230810000G) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HS1230810000G | Bulk | 2,020 |
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HS1230810000G | 16 Weeks | 2,020 |
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Amphenol Anytek HS1230800000GHS 5.08 4*3P GREY ; SOLDER PINS IN LINE/ MARK |
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HS1230800000G | Bulk | 2,020 |
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HS1230800000G |
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Amphenol Anytek HS1230810000GHS-5.08- 4*3P GREY ; SOLDER PINS STAGGERED BY HALF PIN SPACING/ MARK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HS1230810000G | Bulk | 2,020 |
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HS1230810000G |
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S12308 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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s12308Contextual Info: SiHU7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.6 Qg max. (nC) 40 Qgs (nC) 5 Qgd (nC) 9 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg |
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sihu7n60e2002/95/ec2011/65/eujs709a+2 | |
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Contextual Info: SiHP7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 40 Qgs (nC) 5 Qgd (nC) • • • • • 0.6 9 Configuration |
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sihp7n60e2002/95/ec2011/65/eujs709a+1 | |
tc 3086
Abstract: s12308
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sihp7n60eo-220ab2002/95/ec2011/65/eu+4 | |
s12308
Abstract: SiA477EDJ ZENER 106B
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sia477edjsc-70-6l-singlesc-702002/95/ec+5 | |
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Contextual Info: SPICE Device Model Si7117DN www.vishay.com Vishay Siliconix P-Channel 150 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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si7117dn2002/95/ec2011/65/eujs709a+1 | |
s12308Contextual Info: Si1077X Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.078 at VGS = - 4.5 V - 1.4 0.098 at VGS = - 2.5 V -1 0.130 at VGS = - 1.8 V -1 0.188 at VGS = - 1.5 V - 0.3 TrenchFET Power MOSFET Typical ESD Performance 2500 V |
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si1077xsc-892002/95/ec2011/65/eu+3 | |
si1077
Abstract: SOT-563
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si1077xsc-89si1077x-t1-ge32002/95/ec+5 | |
tc 3086Contextual Info: SiHF7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.6 Qg max. (nC) 40 Qgs (nC) 5 Qgd (nC) 9 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg |
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sihf7n60eo-2202002/95/ec2011/65/eu+3 |