S12308 Search Results
S12308 Price and Stock
Amphenol Corporation HS1230800000GPluggable Terminal Blocks TB SP CLA PARALLEL/T |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
HS1230800000G |
|
Get Quote | ||||||||
Amphenol Corporation HS1230810000GPluggable Terminal Blocks TB SP CL INTERLACE/T |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
HS1230810000G |
|
Get Quote | ||||||||
Glenair Inc 390HS011NF2308L4-715Circular MIL Spec Backshells SPLASH PRF CBL SEAL RC LOW STRT LIGHT |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
390HS011NF2308L4-715 |
|
Get Quote |
S12308 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
s12308Contextual Info: SiHU7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.6 Qg max. (nC) 40 Qgs (nC) 5 Qgd (nC) 9 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg |
Original |
SiHU7N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 s12308 | |
Contextual Info: SiHP7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 40 Qgs (nC) 5 Qgd (nC) • • • • • 0.6 9 Configuration |
Original |
SiHP7N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
tc 3086
Abstract: s12308
|
Original |
SiHP7N60E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 tc 3086 s12308 | |
s12308
Abstract: SiA477EDJ ZENER 106B
|
Original |
SiA477EDJ SC-70-6L-Single SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 s12308 ZENER 106B | |
Contextual Info: SPICE Device Model Si7117DN www.vishay.com Vishay Siliconix P-Channel 150 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
Si7117DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
s12308Contextual Info: Si1077X Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.078 at VGS = - 4.5 V - 1.4 0.098 at VGS = - 2.5 V -1 0.130 at VGS = - 1.8 V -1 0.188 at VGS = - 1.5 V - 0.3 TrenchFET Power MOSFET Typical ESD Performance 2500 V |
Original |
Si1077X SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 s12308 | |
si1077
Abstract: SOT-563
|
Original |
Si1077X SC-89 Si1077X-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 si1077 SOT-563 | |
tc 3086Contextual Info: SiHF7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.6 Qg max. (nC) 40 Qgs (nC) 5 Qgd (nC) 9 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg |
Original |
SiHF7N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 tc 3086 |