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    Amphenol Corporation HS1230800000G

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    Amphenol Corporation HS1230810000G

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    Amphenol Anytek HS1230800000G

    HS 5.08 4*3P GREY ; SOLDER PINS IN LINE/ MARK
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    Interstate Connecting Components HS1230800000G
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    Amphenol Anytek HS1230810000G

    HS-5.08- 4*3P GREY ; SOLDER PINS STAGGERED BY HALF PIN SPACING/ MARK
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    S12308 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    s12308

    Contextual Info: SiHU7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.6 Qg max. (nC) 40 Qgs (nC) 5 Qgd (nC) 9 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


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    sihu7n60e2002/95/ec2011/65/eujs709a+202-oct-12s12308 PDF

    Contextual Info: SiHP7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 40 Qgs (nC) 5 Qgd (nC) • • • • • 0.6 9 Configuration


    Original
    sihp7n60e2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    tc 3086

    Abstract: s12308
    Contextual Info: SiHP7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 40 Qgs (nC) 5 Qgd (nC) • • • • • 0.6 9 Configuration


    Original
    sihp7n60eo-220ab2002/95/ec2011/65/eu+4js709a02-oct-12tc 3086s12308 PDF

    s12308

    Abstract: SiA477EDJ ZENER 106B
    Contextual Info: SiA477EDJ Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A)a Qg (Typ.) - 12 0.0140 at VGS = - 4.5 V 0.0160 at VGS = - 3.7 V 0.0190 at VGS = - 2.5 V 0.0330 at VGS = - 1.8 V - 12 - 12 - 12 - 12 34.7 nC PowerPAK SC-70-6L-Single


    Original
    sia477edjsc-70-6l-singlesc-702002/95/ec+52011/65/eujs709a02-oct-12s12308zener 106b PDF

    Contextual Info: SPICE Device Model Si7117DN www.vishay.com Vishay Siliconix P-Channel 150 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    si7117dn2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    s12308

    Contextual Info: Si1077X Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.078 at VGS = - 4.5 V - 1.4 0.098 at VGS = - 2.5 V -1 0.130 at VGS = - 1.8 V -1 0.188 at VGS = - 1.5 V - 0.3 TrenchFET Power MOSFET Typical ESD Performance 2500 V


    Original
    si1077xsc-892002/95/ec2011/65/eu+3js709a02-oct-12s12308 PDF

    si1077

    Abstract: SOT-563
    Contextual Info: Si1077X Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.078 at VGS = - 4.5 V - 1.4 0.098 at VGS = - 2.5 V -1 0.130 at VGS = - 1.8 V -1 0.188 at VGS = - 1.5 V - 0.3 TrenchFET Power MOSFET Typical ESD Performance 2500 V


    Original
    si1077xsc-89si1077x-t1-ge32002/95/ec+52011/65/eujs709a02-oct-12si1077sot-563 PDF

    tc 3086

    Contextual Info: SiHF7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.6 Qg max. (nC) 40 Qgs (nC) 5 Qgd (nC) 9 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original
    sihf7n60eo-2202002/95/ec2011/65/eu+3js709a02-oct-12tc 3086 PDF