S120625 Search Results
S120625 Price and Stock
Bimba Manufacturing Company MRS-120.625-DCYLINDER, O.L. MRS, MAGNETIC REED SWITCH MRS; 1-1/4IN BORE; STROKE: 0.625IN; DB |
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MRS-120.625-D | Bulk | 5 Weeks | 1 |
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Bimba Manufacturing Company MRS-120.625-DXPCYLINDER, O.L. MRS, MAGNETIC REED SWITCH MRS; 1-1/4IN BORE; STROKE: 0.625IN; DB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MRS-120.625-DXP | Bulk | 5 Weeks | 1 |
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Bimba Manufacturing Company MRS-120.625-DXPZCYLINDER, O.L. MRS, MAGNETIC REED SWITCH MRS; 1-1/4IN BORE; STROKE: 0.625IN; DB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MRS-120.625-DXPZ | Bulk | 5 Weeks | 1 |
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Get Quote | |||||
S120625 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: SiHP25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
Original |
SiHP25N40D O-220AB 2011/65/EU 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: SiHP25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
Original |
SiHP25N40D 2011/65/EU O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SiHG25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Optimal Design 450 RDS(on) max. at 25 °C () VGS = 10 V 0.17 Qg max. (nC) 88 Qgs (nC) |
Original |
SiHG25N40D 2011/65/EU O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
|
Contextual Info: SiHP25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
Original |
SiHP25N40D O-220AB 2011/65/EU 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
|
Contextual Info: SiHP25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
Original |
SiHP25N40D O-220AB 2011/65/EU 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
|
Contextual Info: SiHG25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Optimal Design 450 RDS(on) max. at 25 °C () VGS = 10 V 0.17 Qg max. (nC) 88 Qgs (nC) |
Original |
SiHG25N40D 2011/65/EU O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
|
Contextual Info: SiHP25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
Original |
SiHP25N40D 2011/65/EU O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
S120625Contextual Info: SiHG25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Optimal Design 450 RDS(on) max. at 25 °C () VGS = 10 V 0.17 Qg max. (nC) 88 Qgs (nC) |
Original |
SiHG25N40D 2011/65/EU O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 S120625 | |
|
Contextual Info: SiHP25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
Original |
SiHP25N40D 2011/65/EU O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
S120625Contextual Info: SiHG25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Optimal Design 450 RDS(on) max. at 25 °C () VGS = 10 V 0.17 Qg max. (nC) 88 Qgs (nC) |
Original |
SiHG25N40D 2011/65/EU O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 S120625 | |
|
Contextual Info: SiHG25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Optimal Design 450 RDS(on) max. at 25 °C () VGS = 10 V 0.17 Qg max. (nC) 88 Qgs (nC) |
Original |
SiHG25N40D 2011/65/EU O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 |