S1114 Search Results

variable coil 27mhz

Abstract: 27mhz S1114J sumida variable coil
Contextual Info: RF COILS < Pin Type: S Series> Type: S1114J ◆ Product Description ・φ11.9 Max.14.5mm Max. Height. ・Inductance: 5 H Max. ・Operating frequency:150MHz Max. ・In addition to the reference versions of parameters shown here, custom designs are available to meet your exact requirements.

electron Detector

Abstract: S11142 United Detector silicon photodiode electron electron gun SE-171
Contextual Info: Electron beam detector Si photodiode S11141 S11142 High sensitivity, direct detection of low energy 2 keV or more electron beams Features Applications Direct detection of low energy (2 keV or more) electron beams with high sensitivity Backscattered electron detector for scanning electron

Contextual Info: Electron beam detector Si photodiode S11141 S11142 High sensitivity, direct detection of low energy 2 keV or more electron beams Features Applications Direct detection of low energy (2 keV or more) electron beams with high sensitivity Backscattered electron detector for scanning electron

Contextual Info: 電子線検出用 Siフォトダイオード S11141-10 S11142-10 低エネルギー 1 keV以上 の電子線を高感度に 直接検出 特長 用途 低エネルギー (1 keV以上)の電子線を高感度に直接検出 走査電子顕微鏡 (SEM)の反射電子検出器

Contextual Info: Electron beam detector Si photodiode S11141 S11142 High sensitivity, direct detection of low energy 2 keV or more electron beams Features Applications Direct detection of low energy (2 keV or more) electron beams with high sensitivity Backscattered electron detector for scanning electron

S11141

Abstract: S11142
Contextual Info: 電子線検出用 Siフォトダイオード S11141 S11142 低エネルギー 2 keV以上 の電子線を高感度に 直接検出 特長 用途 低エネルギー (2 keV以上)の電子線を高感度に直接検出 走査電子顕微鏡 (SEM)の反射電子検出器

dg468dv

Contextual Info: DG467, DG468 Vishay Siliconix Low Power, High Voltage SPST Analog Switches DESCRIPTION FEATURES The DG467 and DG468 are dual supply single-pole/singlethrow SPST switches. On resistance is 10  maximum and flatness is 2  max over the specified analog signal range.

near IR photodiodes

Abstract: S8745-01 S8558
Contextual Info: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5

Contextual Info: DG604 Vishay Siliconix 1.0 pC Charge Injection, 100 pA Leakage, 4-Channel Multiplexer FEATURES DESCRIPTION • Halogen-free according to IEC 61249-2-21 Definition • Ultra low charge injection ± 1 pC, typ. over the full analog signal range • Leakage current < 0.5 nA max. at 85 °C

DG2722

Contextual Info: DG2722 Vishay Siliconix 2 Port, USB 2.0 High Speed 480 Mbps Switch, DPDT Analog Switch DESCRIPTION FEATURES The DG2722 is 2 port high speed analog switch optimized for USB 2.0 signal switching. The DG2722 switch is configured in DPDT. It handles bidirectional signal flow, achieving a

DG2726

Contextual Info: DG2730 Vishay Siliconix 2 Port, USB 2.0 High Speed 480 Mbps Switch, DPDT Analog Switch DESCRIPTION FEATURES The DG2730 is 2 port high speed analog switch optimized for USB 2.0 signal switching. The DG2730 switch is configured in DPDT. It handles bidirectional signal flow, achieving a

FUJITSU MICROWAVE TRANSISTOR

Abstract: class A push pull power amplifier 150w FLL1500IU-2C FLL1500 Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz 4433b IMT-2000 push pull class AB RF linear S110 transistor
Contextual Info: FUJITSU APPLICATION NOTE - No 004 150-W, 2.11- 2.17 GHz Push-Pull Amplifier For IMT-2000 BaseStation Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average • Easy tuning for Power, WCDMA ACPR, and IMD • Over 150 Watts Pout over entire band

Contextual Info: DG540, DG541, DG542 Vishay Siliconix Wideband/Video “T” Switches DESCRIPTION FEATURES The DG540, DG541, DG542 are high performance monolithic wideband/video switches designed for switching RF, video and digital signals. By utilizing a "T" switch configuration on each channel, these devices achieve

schleifring

Contextual Info: SOLARE ENERGIE Für die Windenergie- und Solartechnik fertigt Rübsamen einbaufertige Bauteile mit teils stattlichen Dimensionen. Hergestellt werden diese aus hochvergütetem Stahl, Aluminium oder Buntmetall per Metalldrücken und Tiefziehen. Per Metalldrücken

Contextual Info: SQM120N04-1m8 Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.0018 ID (A) • TrenchFET Power MOSFET 120 Configuration

c945 TRANSISTOR equivalent

Abstract: UPD4538 C945 b C945 c945 w 53 KC945 TRANSISTOR c945 p c945 equivalent C945 plastic transistor c945
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC1830 FILTER-CONTAINING VIDEO CHROMA, SYNCHRONIZING SIGNAL PROCESSING LSI COMPATIBLE WITH NTSC/PAL SYSTEM DESCRIPTION The µPC1830 is a filter-containing video chroma, synchronizing signal processing LSI compatible with the NTSC/

S8558

Contextual Info: セレクションガイド 2014.5 Siフォトダイオード 紫 外 ~ 近 赤 外 域 放 射 線 に 対 応した ラ イ ン アップ Si PHOTODIODE S i P h o t o d i o d e Siフォトダイオード 紫 外 ∼ 近 赤 外 域 、放 射 線 に 対 応した ラ イ ン アップ

socket s1

Abstract: diode s1 61 diode s1 77 diode s1 85 S124 040 d10 diode s1 diode s1 74 HW-133-PQ160 S1 18
Contextual Info: P1 TTL0 P1 D3 A1 TTL3 A2 TTL6 A3 TTL9 A4 D2 D1 D0 S1-90 S1-82 S1-79 S1-77 TTL1 TTL4 B2 TTL7 B3 TTL10 B4 A5 TTL12 B5 AID5 A6 TTL14 B6 AID4 A7 PVCC B7 AID0 A8 PVSP B8 AID1 A9 TTL18 B9 AID2 A10 AGND B10 AID3 A11 TTL44 B11 AID7 A12 AGND B12 AGND A13 AGND B13 CGND

Contextual Info: Si4840/44-DEMO Si4840/44 D EMO B OARD U SER ’ S G UIDE 1. Features  ATDD analog tune and digital display FM/AM/SW radio  Worldwide FM band support from 64 to 109 MHz with 5 default sub-bands: FM1 FM2 FM3 FM4 FM5 

Contextual Info: SQM120N04-1m8 Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.0018 ID (A) • TrenchFET Power MOSFET 120 Configuration

DG9421

Contextual Info: DG9421, DG9422 Vishay Siliconix Precision Low-Voltage, Low-Glitch CMOS Analog Switches DESCRIPTION FEATURES Using BiCMOS wafer fabrication technology allows the DG9421, DG9422 to operate on single and dual supplies. Designed for optimal performance at single 5 V and dual

HX8369

Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
Contextual Info: DOC No. HX8369-A00-DS HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver Version 02 October, 2010 HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents October, 2010

XC95108XL

Abstract: si122 ISA-96 HW-133 RH A4 130 XC95144XL IS9B TTL-45 SI-122
Contextual Info: P1 P1 TTLO TTL3 TTL6 TTL9 AID6 AID5 _Q3_ A1 A2 A3 A4 5 1-B O _Q2_ 5 1 -7 4 DI 5 1 -7 1 _BD_ S I— 69 TT L1 TTL4 TTL7 TTL10 GND A5 TTL12 A6 TTL14 P1 5 1 -8 2 TTL2 5 1 -8 7 TTL5 C2 B3 TTL8 C3 B4 TTL11 C4 B7 AI DO A8 +5V B8 AID1 A9 TTL18 B9 AID3 AID7 All TTL44

S1114

Contextual Info: E-Series RF 2:1 Transformer 10 - 1000 MHz ETC2-1-4 V3.00 SM-22 Features ● 2:1 Impedance Ratio Specifications @ 25°C Frequency Range 10 - 1000 MHz Insertion Loss 10 - 1000 MHz 15 - 800 MHz 20 - 550 MHz 40 - 300 MHz Maximum 3 dB 2 dB 1 dB 0.5 dB Schematic