S1111 Search Results

Contextual Info: I 31 I I File No. I 384-20080725A ISHEET 1/1 -14.500 .9 0 — 1 -9 .0 0 i0 .1 0 - CO O •0.28 O. 50 o CN CN i S1111m T CD in in O) in SPECIFICATIONS C ontact Current Rating: 0.5A Voltage Rating: 40 V C ontact Resistance: 30 Milliohms Maximum c L $ ’ Insulation Resistance:

SI1013CX

Abstract: 71377
Contextual Info: Si1013CX Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.760 at VGS = - 4.5 V - 0.45 1.040 at VGS = - 2.5 V - 0.40 1.5 at VGS = - 1.8 V - 1.5 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: New Product Si4774DY Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0095 at VGS = 10 V 16 0.0120 at VGS = 4.5 V 15 VDS (V) 30 Qg (Typ.) 9.5 nC SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D • Halogen-free According to IEC 61249-2-21

si4286

Contextual Info: Si4286DY Vishay Siliconix Dual N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0325 at VGS = 10 V 7 0.040 at VGS = 4.5 V 6.3 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET

Contextual Info: SUP90N10-8m8P Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 100 0.0088 at VGS = 10 V 90d 97 • TrenchFET Power MOSFET • 175 °C Junction Temperature RoHS • 100 % Rg and UIS Tested COMPLIANT

Contextual Info: DG2015 Vishay Siliconix Low-Voltage, Low RON, Dual DPDT Analog Switch DESCRIPTION FEATURES The DG2015 is a dual double-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed, low on-resistance and small physical size, the

Contextual Info: SUP90N10-8m8P Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 100 0.0088 at VGS = 10 V 90d 97 • TrenchFET Power MOSFET • 175 °C Junction Temperature RoHS • 100 % Rg and UIS Tested COMPLIANT

Contextual Info: New Product SiS780DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.0135 at VGS = 10 V 18a 0.0175 at VGS = 4.5 V 18a Qg (Typ.) 7.3 nC • Halogen-free According to IEC 61249-2-21

Contextual Info: DG2017 Vishay Siliconix Low-Voltage, Low RON, Dual DPDT Analog Switch DESCRIPTION FEATURES The DG2017 is a dual DPDT double-pole/double-throw , optimized for high performance analog switching, and specifically designed to benefit portable audio applications.

8254aa

Abstract: capacitor NED je8 S-8353A33MC-IQS-T2 S-8254 battery c2u G83 PNP Transistor b9d s2914 S-8355M50MC-MDJ-T2 AVR 8335 M6M80041
Contextual Info: Network Components Business Unit CMOS IC Product Catalogue 2002-2003 October 2002 SII offers data sheets on the Internet. On SII-IC.COM, SII offers data sheets which summarize the specifications of each IC. For the latest information, access the following WEB site.

diode s1 77

Abstract: S124 diode s1 diode s1 74 socket s1 S1-100 S1-128
Contextual Info: P1 TTL0 P1 D3 A1 TTL3 A2 TTL6 A3 TTL9 A4 D2 D1 D0 S1-118 S1-110 S1-103 S1-100 TTL1 TTL8 C3 B4 TTL11 C4 TTL13 C5 TTL15 C6 TTL16 C7 TTL17 C8 TTL19 C9 AGND C10 PVCC C11 TTL20 C12 TTL21 C13 TTL22 C14 TTL23 C15 TTL24 C16 TTL25 C17 PVCC C18 TTL26 C19 PVPP C20 TTL28

Contextual Info: SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) () VGS = 10 V 0.38 Qg (Max.) (nC) • 100 % Avalanche Tested 68 Qgs (nC) • Gate Charge Improved

Contextual Info: Si7216DN Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () ID (A) 0.032 at VGS = 10 V 6e 0.039 at VGS = 4.5 V 5e Qg (Typ.) 5.5 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Contextual Info: Si4724 Vishay Siliconix N-Channel Synchronous MOSFETs With Break-Before-Make DESCRIPTION FEATURES The Si4724CY N-Channel synchronous MOSFET with break-before-make BBM is a high speed driver designed to operate in high frequency DC/DC switchmode power supplies. It’s purpose is to simplify the use of N-Channel

Contextual Info: SiS782DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) () 30 0.0095 at VGS = 10 V 16 0.0120 at VGS = 4.5 V 16 Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm APPLICATIONS 3.30 mm 1 S 2 • Notebook PC

Contextual Info: New Product Si4774DY Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0095 at VGS = 10 V 16 0.0120 at VGS = 4.5 V 15 VDS (V) 30 Qg (Typ.) 9.5 nC SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D • Halogen-free According to IEC 61249-2-21

Contextual Info: Si4724 Vishay Siliconix N-Channel Synchronous MOSFETs With Break-Before-Make DESCRIPTION FEATURES The Si4724CY N-Channel synchronous MOSFET with break-before-make BBM is a high speed driver designed to operate in high frequency DC/DC switchmode power supplies. It’s purpose is to simplify the use of N-Channel

HP7004A

Abstract: 1417K4A SLLU007A TLK2500 HP83480 BERT 240-1018-1-ND lucent laser 2.5 Gbps
Contextual Info: TLK2500 Serdes EVM Kit Setup and Usage User’s Guide March 2000 Mixed Signal Products SLLU007A IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information

S-1111

Abstract: S-1121 S-1121B26MC-N2L-TF
Contextual Info: S-1111/1121系列 高纹波抑制率 低压差型 CMOS电压稳压器 www.sii-ic.com Rev.5.0_00 Seiko Instruments Inc., 2002-2010 S-1111/1121 系列是使用 CMOS 技术开发的低压差, 高精度输出电压, 低消耗电流正电压型电压稳压器。

Contextual Info: Si7635DP Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0049 at VGS = 10 V - 40 0.0075 at VGS = 4.5 V - 40 VDS (V) - 20 Qg (Typ.) 21.5 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product SiS780DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.0135 at VGS = 10 V 18a 0.0175 at VGS = 4.5 V 18a Qg (Typ.) 7.3 nC • Halogen-free According to IEC 61249-2-21

S-1010A

Abstract: S1200A S1010 S-12 A146 S-2111AW 10029A
Contextual Info: １０ mmでDIPピンコンパチブル。半透明平ノブ付きも登場！ DIP型ロータリコードスイッチ ROTARY CODED SWITCHES S-1000A/2000A 内部構造図 RoHS 指令対応 RoHS compliant INTERNAL STRUCTURE S-1000A / 2000A series ス イ

Contextual Info: 01/21/2004 16:20 FAI 2194774856 OKAYA ELECTRIC 00 0 1 Okaya Electric America Inc. 503 Wall Street, Valparaiso, Indiana 4Ó363 Ph: 219-477-4488 / Fax: 21 9-477-4856 SPECIFICATION FOR APPROVAL MODEL TYPE: LCD MODULE MODEL N U M B E rT Î^ 6~ \ g l'? o ^ LQ S~ ~(\

IDC14M

Abstract: 3M2514-6002UB SMT-1210 RD4A "Digital Oscilloscope" SLLU011 TLK2201 HP83480 HP7004A 240-1018-1-ND
Contextual Info: TLK2201 Serdes EVM Kit Setup and Usage User’s Guide July 2000 Mixed Signal DSP Solutions SLLU011 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information