S11 HALL Search Results

AMF100540L

Abstract: AMF100540L2500AT AMF160840D87181AT S1156 AMF160840D87181BT AMF100540L0620AT AMF100540L2450AT 2400-2500MHz
Contextual Info: MD-MDE015-201212 Multilayer Chip LPF AMF1005 L / AMF1608D Series Features Applications • Ultra Small Size and Low Profile  Mobile phone 1.0mm（L）x0.5mm（W）×0.4mm（H） typ.  RF Module 1.0mm（L）×0.5mm（W）×0.5mm（H） typ. Antenna Switch Module

130-082

Abstract: IC TB 1237 AN NEC 7812 amplifier simulation circuit C band FET transistor s-parameters s2p n34018h AN1022 CS 5609 transistor NEC 7812 IC LM 7812
Contextual Info: California Eastern Laboratories AN1022 APPLICATION NOTE Designing Low Noise Amplifiers for PCS Application ABSTRACT DEVICE CHOICE AND CHARACTERISTIC This application note will review the process by which microwave amplifier designers choose their designs based

130-082

Abstract: Transistor LM 7812 NEC 7812 34018 2052-1215 NEc hemt CS 5609 NE34018 equivalent transistor NEC 7812 IC LM 7812
Contextual Info: California Eastern Laboratories AN1022 APPLICATION NOTE Designing Low Noise Amplifiers for PCS Application ABSTRACT DEVICE CHOICE AND CHARACTERISTIC This application note will review the process by which microwave amplifier designers choose their designs based

rogers* 4403

Abstract: rogers 4403 HMC454 HMC454ST89
Contextual Info: V00.1004 PRODUCT APPLICATION NOTE Designing with the HMC454ST89 Amplifier Utilizing Small Signal S-parameters General Description The HMC454ST89 is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor HBT ½ watt MMIC amplifier operating between 0.4 and 2.5 GHz. Packaged in a low cost industry standard SOT89, the amplifier gain

Contextual Info: Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK V00.1004 PRODUCT APPLICATION NOTE Designing with the HMC454ST89 Amplifier Utilizing Small Signal S-parameters

esm-ba2

Abstract: ESM-BT421 esm 107 ESM-BA303 ESM-BT411 ESM-BA202 ESM-BT401 ESM-BA302 ESM-BA201 ESM-2H201
Contextual Info: Safety Relays ESM/ ESM-F More than safety. Safety More than safety. Around the world – the Swabian specialists in motion sequence control for mechanical and systems engineering. Emil Euchner, the company’s founder and inventor of the multiple limit switch, circa 1928.

autotransformer starter medium voltage

Abstract: H9208 relay HM 810
Contextual Info: www.toshiba.com/ind 2013 Toshiba International Corporation • Rev. 130222 Industrial Catalog 2013 13131 W. Little York Road • Houston, TX 77041 Tel: 713-466-0277 Fax: 713-466-8773 US: 800-231-1412 Canada: 800-872-2792 Mexico: 800-527-1204 2013 Industrial Catalog

2n3478

Abstract: RF Transistor s-parameter
Contextual Info: Test & Measurement Application Note 95-1 H S-Parameter Techniques for Faster, More Accurate Network Design http://www.hp.com/go/tmappnotes H Contents 1. Foreword and Introduction 2. Two-Port Network Theory 3. Using S-Parameters 4. Network Calculations with Scattering Parameters

AMF1608B2450A1T

Abstract: AMF1005B2450AT AMF1608B2450B1T 2400-2500MHz
Contextual Info: MD-MDE013-201212 Multilayer Chip BPF AMF1005B / AMF1608B Series Applications Features • Mobile phone  Ultra Small Size and Low Profile 1.6mm（L）x0.8mm（W）×0.4mm（H） typ.  W-LAN , Bluetooth , etc. 1.0mm（L）×0.5mm（W）×0.4mm（H） typ.

ATF10236

Abstract: FET K 2611 TRANSISTOR BD 137-10 AGILENT 9988 microstripline ATF-10136 transistor equivalent 2274 table chart ATF-10736 HP346A MSA-0686
Contextual Info: Using the ATF-10236 in Low Noise Amplifier Applications in the UHF Through 1.7 GHz Frequency Range Application Note 1076 Introduction GaAs FET devices are typically used in low-noise amplifiers in the microwave frequency region where silicon transistors can’t

ATF-10736

Abstract: AN-G005 ATF10236 ATF-10236 ATF10136 ATF-10136 HP346A MSA-0686 TK11650U TL05
Contextual Info: Using the ATF-10236 in Low Noise Amplifier Applications in␣ the UHF through 1.7 GHz Frequency Range Application Note 1076 Introduction GaAs FET devices are typically used in low-noise amplifiers in the microwave frequency region where silicon transistors can’t

3G antenna design

Abstract: 987650* "molex"
Contextual Info: Molex’s class-leading 2.4/5GHz standalone antennas combine ground-plane-independent design with high-radiation efficiency to give customers better connectivity and reduced development time for wireless devices Key to any wireless applications that impact the most critical design variables

Contextual Info: U92U3 Low-Current RFIC Downconverter Features « • The TQ9203 RFIC Downconverter is a multifunction RF front end designed for the high dynamic range cellular communications standards. The design of the TQ9203 provides a 2.5 dB system noise figure for excellent sensitivity, and a good signal

ROHM capacitor 100nf 50v 0603 x7r

Abstract: 80pf philips Trimmer capacitors MCH185C103KK application notes sa602 DFC2R SA620 0805CG569C9BB0 DFC2R881 SA601 SMV 142
Contextual Info: INTEGRATED CIRCUITS AN1777 Low voltage front-end circuits: SA601, SA620 M. B. Judson Philips Semiconductors 1997 Aug 20 Philips Semiconductors Application note Low voltage front-end circuits: SA601, SA620 AN1777 Author: M. B. Judson CONTENTS I. Introduction . . . . . . . . . . . . . . . . . . . . . . . . .

DUAL PWM 50 DUTY

Abstract: full bridge driver -allegro A3971SLB h bridge driver by pwm
Contextual Info: DUAL DMOS FULL-BRIDGE DRIVER ADVANCE INFORMATION Subject to change without notice October 1, 1999 24 LOGIC SUPPLY 2 23 PWM2 S10 3 22 S20 OUT1A 4 21 OUT2A LOAD SUPPLY1 5 20 LOAD SUPPLY2 GROUND 6 19 GROUND GROUND LOGIC GROUND VDD NC VBB1 VBB2 LOGIC 1 LOGIC

SAS SFF-8087

Abstract: SAS SFF-8086 SAS SFF-8484 SFF8484 pinout SFF-8484 cj cl a17 IPASS SAS SFF-8086 SFF-8087 SFF-8643 pinout
Contextual Info: 10 I MATERIAL 79576-5000 79576-5001 79576-5002 79576-5003 79576-5004 79576-9000 79576-9001 79576-9002 79576-9003 79576-9004 79576-5020 79576-5021 79576-5022 79576-5023 79576-5024 APPS I PASS ON BP I PASS ON BP I PASS ON BP I PASS ON BP I PASS ON BP I PASS ON CTRL

s11 hall magnetic sensor

Contextual Info: WHITE PAPER: WP016 eGaN FET Small Signal RF Performance eGaN® FET Small Signal RF Performance EFFICIENT POWER CONVERSION Michael de Rooij, Ph.D., Executive Director of Applications Engineering and Johan Strydom, Ph.D., V.P., Applications, Efficient Power Conversion Corporation

yg 2025

Abstract: HP346A 2305 isolator AT-30511 AT-31011 AT-32033 ATF-10236 AN-G004 equivalent transistor K 3532
Contextual Info: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors

HP346A

Abstract: D2030 5091-9311E 47433 W02 SOT23 AT-30511 AT-31011 AT-32033 ATF-10236 Hewlett-Packard transistor microwave
Contextual Info: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors

ANTENNA dipole

Contextual Info: M ModFLEX A Accessorie es – 2.4 GH Hz Dipole Antenna A DATASHEET 2.4 GHzz – 2.5 GHz G Dipo ole 2dBii Antenn na for Re everse Polarity P SMA O ORDERIN NG INFOR RMATION N Order Number 001-0001 1 D Description 2.4 4 GHz dipole antenna for reverse r polariity SMA conn

2.4 GHz dipole antenna

Abstract: 2400-2500MHz
Contextual Info: M ModFLEX A Accessorie es – 2.4 GH Hz Dipole Antenna A DATASHEET 2.4 GHzz – 2.5 GHz G Dipo ole 2dBii Antenn na for Re everse Polarity P SMA O ORDERIN NG INFOR RMATION N Order Number 001-0001 1 D Description 2.4 4 GHz dipole antenna for reverse r polariity SMA conn

Contextual Info: M ModFLEX A Accessorie es – 2.4 GH Hz Dipole Antenna A DATASHEET 2.4 GHzz – 2.5 GHz G Dipo ole 2dBii Antenn na for Re everse Polarity P SMA O ORDERIN NG INFOR RMATION N Order Number 001-0001 1 D Description 2.4 4 GHz dipole antenna for reverse r polariity SMA conn

SOT143 L03

Abstract: L0523 D2030 L03 sot143 yg 2025 microstripline FR4 AT-30511 AT-31011 W02 SOT23 ATF-10236
Contextual Info: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note AN 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors offer state-ofthe-art noise figure and gain performance with low power

rf mems switch spst

Abstract: SKY13317-373 Hittite RF Switch SOI military switch EDN handbook rf3024 SKY13317-373LF RF3023 RF3025 2SMES-01
Contextual Info: R F switching options: The right fit might come with a loss Manufacturers are offering SOI and MEMS alternatives to PIN-diode, GaAs, and electromechanical switches for a variety of RF applications, but you need to understand RF-switch specs before you commit to a new technology.