S10C Search Results

S10C100

Abstract: S10C70 S10C80 S10C90
Contextual Info: Ek MOSPEC S10C70 thru S10C100 Schottky Barrier Rectifiers S C H O T T K Y B A R R IE R R E C T IF IE R S Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact.

S10C30

Abstract: S10C60
Contextual Info: MOSPEC S10C30 thru S10C60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency

S10C150C

Abstract: MOSPEC
Contextual Info: MOSPEC S10C150C Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency

Contextual Info: MOSPEC Schottky Barrier Rectifiers S10C70 Thru S10C100

Contextual Info: S10C70PT CHENMKO ENTERPRISE CO.,LTD THRU SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 70 - 100 Volts S10C100PT CURRENT 10 Amperes FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Metal Silicon junction, majority carrier conduction

MOSPEC S10C45 SCHOTTKY BARRIER RECTIFIERS

Abstract: S10C30 S10C45 S10C50 S10C60 FSM 12.5 S10c
Contextual Info: MOSPEC S10C30 thru S10C60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact.

S10C30

Abstract: S10C60
Contextual Info: MOSPEC S10C30 thru S10C60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

S10C30

Abstract: S10C45 S10C50 S10C60
Contextual Info: Bk MOSPEC S10C30 thru S10C60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact.

Contextual Info: S10CG, S10CJ, S10CK, S10CM www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated pallet chip junction • Low forward voltage drop • Low leakage current

S10C30CE

Abstract: S10C60CE
Contextual Info: MOSPEC S10C30CE thru S10C60CE Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency

S10C100

Abstract: S10C70 S10C80 S10C90
Contextual Info: MOSPEC S10C70 Thru S10C100 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS - Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

S10C100

Abstract: S10C70 S10C80 S10C90
Contextual Info: Sk MOSPEC S10C70 thru S10C100 Schottky Barrier Rectifiers SCHOTTKY B A RRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact,

S10C45

Abstract: S10C40P S10C30
Contextual Info: S10C30PT CHENMKO ENTERPRISE CO.,LTD THRU SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 30 - 60 Volts S10C60PT CURRENT 10 Amperes FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Metal Silicon junction, majority carrier conduction

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

SAB 8048 P 220 SM 590

Abstract: MAA 723 MADE S18B micro controller based cfl Inverter soc 512a d74c 4X16 lcd 1514c 8 lcd digit counter s1bc
Contextual Info: PCF84C633A J V_ SINGLE-CHIP 8-BIT MICROCONTROLLER WITH LCD DRIVERS, DERIVATIVE PORT, TIMER/CAPTURE AND TIMER/COUNTER DESCRIPTION IMPORTANT The PCF84C633A is a microcontroller with 20 on-chip liquid crystal display LCD outputs. These can be configured for

PIC18F67K90

Abstract: str w 6152 PIC18FXXKXX diode prx 2814 433 00 PIC18F85K90 PIC18F87K90 PIC32 PICC-18 PIC18f example codes CTMU rs232 to rj11 4 pin
Contextual Info: PIC18F87K90 Family Data Sheet 64/80-Pin, High-Performance Microcontrollers with LCD Driver and nanoWatt XLP Technology  2011 Microchip Technology Inc. DS39957C Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

Contextual Info: SD303C.C Series Vishay High Power Products Fast Recovery Diodes Hockey PUK Version , 350 A FEATURES • High power FAST recovery diode series • 1.0 to 2.0 µs recovery time RoHS COMPLIANT • High voltage ratings up to 2500 V • High current capability

Contextual Info: VS-SD803C.C Series www.vishay.com Vishay Semiconductors Fast Recovery Diodes Hockey PUK Version , 845 A FEATURES • • • • • • • • • • • • B-43 PRODUCT SUMMARY IF(AV) 845 A Package B-43 Circuit configuration Single diode High power FAST recovery diode series

S15C

Abstract: S20C SD603C
Contextual Info: Bulletin I2068 rev. C 04/00 SD603C.C SERIES Hockey Puk Version FAST RECOVERY DIODES Features High power FAST recovery diode series 600A 1.0 to 2.0 µs recovery time High voltage ratings up to 2200V High current capability Optimized turn on and turn off characteristics

Contextual Info: SD603C.C Series Vishay Semiconductors Fast Recovery Diodes Hockey PUK Version , 600 A FEATURES • High power FAST recovery diode series • 1.0 to 2.0 µs recovery time RoHS COMPLIANT • High voltage ratings up to 2200 V • High current capability • Optimized turn-on and turn-off characteristics

86CH29

Abstract: PS3 coler TMP86CH29F IQR 2400 piezoelectric buzzer connected to microcontroller
Contextual Info: TOSHIBA 1999-9-17 TOSHIBA Original CMOS 8-bit Microcontroller TLCS-870/C Series TMP86C829U/F, TMP86CH29U/F, TMP86CM29U/F, TMP86PM29U/F Databook 10th Edition T O S H IB A C O RPO RA TIO N TOSHIBA TMP86C829/H29/M29 Under Development CMOS 8-Bit Microcontroller

DIODE mur 120

Contextual Info: ÏK I\ TOSHIBA IV l i TMP86CK74A/CM74A CMOS 8 -Bit Microcontroller TMP86CK74A/TMP86CM74A TMP86CK74A/CM74A is a low power, high-speed and high-performance 8-bit single chip microcomputer, including large capacity ROM/RAM, input/output ports, m ultiple timer/counter, serial interface, 8-bit AD

TSP50C04

Abstract: BD 4914 MX 0541 TSP5220 TSP50C12 BA 59 04AF P DAC 0804 interfacing DAC with 0830 microprocessor LCD 16PIN mozart
Contextual Info: TSP50C0x/1x Family Speech Synthesizer Design Manual 2000 Linear Products SPSS011D IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information

VS100B-12

Abstract: VS15C-12 P-209 VS30C-5 VS150B VS50B-24 p209
Contextual Info: uutm /k VS-SERIES DENSEI-LAMBDA Single output 10W - 150W Model name VS 100B-24 I Rated Output Voltage Output Wattage Series Name PC Board Type Power Supply • Features C • € marking Low Voltage Directive • Input: 100V A C (85~132V AC) • Single O utput:10W ,15W ,30W ,50W ,75W ,100W ,150W