S-550 EQUIVALENT Search Results

F25NM50N

Abstract: W25NM50 p25nm50 B25NM50N p25nm50n W25NM STP25NM50 W25NM50N
Contextual Info: STx25NM50N N-channel 500 V, 0.11 Ω, 22 A MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247 Features Type VDSS @Tjmax RDS(on) max ID 3 ) s ( ct 3 STB25NM50N 550 V < 0.140 Ω 22 A STB25NM50N-1 550 V < 0.140 Ω 22 A STF25NM50N 550 V < 0.140 Ω

a7125

Abstract: A745 MAGNETIC HEAD circuit Differentiator peak detect
Contextual Info: m^ _ ù M M SSI 550 4-Channel Magnetic Tape Read Circuit s _ k m s "in n o v a t oDRS r s in in t e g r a t io n IN //iN Preliminary Data Sheet GENERAL DESCRIPTION FEATURES Silicon System s’ SSI 550 combines magnetic tape head read signal a m plification and processing onto a single

Transistor - BC 547, CL 100

Abstract: bc 104 npn transistor transistor C 548 B bc 408 equivalent BC548BC bc 558 equivalent bc 103 transistor c 548 equivalent of BC 399 NPN Transistor TRANSISTOR C 557 B
Contextual Info: BC546*BC 547 *BC 548 *BC549. BC 550 NPN S IL IC O N TR A N S IS T O R T R A N S IS T O R N P N S IL IC IU M Compì, of BC 556 at 560 Preferred device D is p o s itif recommandé General purpose BC 546/BC 547/BC 548 Usage général BC 546/BC 547/BC 548 Low noise BC 549/BC 550

C 548 B

Abstract: B549C BC650 C 547 B TRANSISTOR BC650 transistor bc 549 equivalent transistor C 548 B C547B TRANSISTOR BC 550 c transistor c 548
Contextual Info: asc D • fi 23S hü S Q Q Q m S Q T M S I E G _ T - 2~ 9 ~ Z / NPN Silicon Transistors BC 546 - BC 550 SIEMENS AKTIENGESELLSCHAF . 25C 04190 D - BC 546, BC 547, BC 548, BC 549 and BC 550 are epitaxial NPN silicon planar transistors in TO 92 plastic packages 10 A 3 DIN 41868 . They are intended for use in AF input and

Contextual Info: LM X 2306, L M X 2 31 6, LM X 2326 LMX2306/LMX2316/LMX2326 PLLatinum Low Power Frequency Synthesizer for RF PersonalCommunications LMX2306 - 550 MHz LMX2316 -1.2 GHz LM X 23262.8 GHz Te x a s In s t r u m e n t s Literature Number: SNAS016F t OBSOLETE a l

mc 4011

Abstract: MIL-S-19500 1N6304 1N6305 1N6306 DO-203AB
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be cotrpleted by 30 September 1994 INCH-POUND MIL-S-19500/550A 30 June 1994 SUPERSEDING MIL-S-19500/550 USAF 21 Dec enter 1981 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DI00E, SILICON, FAST-RECOVERY, HIGH CURRENT

Contextual Info: 61 1 59 50 MI CROSEMI CORP/POWER - !- OS 02E 00514 D 7 DE I b l l S T S D Q O G D s m ~'33~ZeT □ M~ CCC6003 TECHNOLOGY 15 A, 550 V, NPN Darlington Power Transistor Chip • Triple Diffused, Glass Passivated ■ Contact Metallization: Base and emitter-aluminum

DAC8850

Abstract: Texas Instruments 8010 *C8550 DAC85501 DAC8550
Contextual Info: DA C8 550 DAC8550 www.ti.com SLAS476E – MARCH 2006 – REVISED MARCH 2012 16-BIT, ULTRA-LOW GLITCH, VOLTAGE OUTPUT DIGITAL-TO-ANALOG CONVERTER Check for Samples: DAC8550 FEATURES 1 • Relative Accuracy: 3LSB • Glitch Energy: 0.1nV-s • MicroPower Operation:

DAC8550

Contextual Info: DA C8 550 DAC8550 www.ti.com SLAS476E – MARCH 2006 – REVISED MARCH 2012 16-BIT, ULTRA-LOW GLITCH, VOLTAGE OUTPUT DIGITAL-TO-ANALOG CONVERTER Check for Samples: DAC8550 FEATURES 1 • Relative Accuracy: 3LSB • Glitch Energy: 0.1nV-s • MicroPower Operation:

Contextual Info: GENNUM c or p o r a t i Medium Power Class B Amplifier on 550 LC55Ü DATA SHEET FEATURES DESCRIPTION • 23 dB class A preamp & 40 dB class B output stage The LC 550 is a low v o lta g e linear m o n o lith ic in te g ra te d c irc u it a m plifier. It Is co m p ris e d of tw o s ep arate a m p lifie rs

Contextual Info: SANKEN ELECTRIC CO LTD STA304A 5SE D • TTTGTm □ D D l G EJi4 i^b ISAKJ Under development Silicon NPN Triple Diffused Planar [Maximum Ratings (Ta = 25°C) ÉâV J Î ï .*: s s m n C ollector-to-B ase Voltage VCBO 550 V C ollector-to-E m itter Voltage

ATA06211

Abstract: ATA06211D1C
Contextual Info: ATA06211 AGC Transimpedance Amplifier SONET OC-12 PRELIMINARY DATA SHEET-Rev 4 FEATURES • Single +5 Volt Supply · Automatic Gain Control · -32 dBm Sensitivity · 0 dBm Optical Overload · 550 MHz Bandwidth APPLICATIONS · SONET OC-12 /SDH STM-4 622Mb/s

features cypress flash 370

Abstract: cypress flash 370 device cypress flash 370
Contextual Info: Revision: Monday, January 4,1993 57E D • 550=1^2 □ D D tlQ21 573 ■ CYP 07 CY7C373 C VPRESS SEMICONDUCTOR PRELIMINARY 7M CYPRESS SEMICONDUCTOR 64-Macrocell Flash PLD perform ance o f the 22V10 to high-density PLD s. Features • 64 m acrocells in four logic blocks

Contextual Info: _ S TR ATO -TH ERM Terminals & Splices for High Temperature Applications Catalog 1307612 Revised 7-01 Product Facts • Product available in tem­ perature ranges of 500°F t f e t m , 550°F [288°C], 650°F[343°C] and 1200°F [649°C] ■ Product employs the

Contextual Info: CY27C020 ADVANCED INFORMATION if CYPRESS Features 256K x 8 CMOS EPROM Functional Description • CM O S for optim um speed/power • H igh speed — *aa — 70 ns max. • Low power — 140 mW max. — Less th a n 550 jiW when deselected • Byte-wide memory organization

K1500E

Abstract: K1100A
Contextual Info: TECCÔR ELECTRONICS INC fiê ? 2 ô n 24E D DOGISHS S "-ZS-OG [¡t e c c o r III ELECTRONICS, INC. 1801 HURD DRIVE IRVING, TEXAS 75038-4385 •PHONE 214/580-1515 FAX 214/550-1309 SIDAC 95-330 VOLTS} t General Description Applications The Sidac is a silicon bilateral voltage triggered

IPC-610A

Abstract: MK200
Contextual Info: MK200 SERIES DC/DC CONVERTERS iiHerpoint P remi er P ^ So oker TECHNICAL PREVIEW l i t i u n s — — - j * 8a" TYPICAL C H A RACTE RIS TICS : Tc = 25°C, full load, V jn = 28 VDC unless otherwise specified. Weight Operating Temperature Range Case Synchronization: 450 to 550 kHz

Contextual Info: R F M 2 3 BP R F M 2 3 BP I S M T R A N S C E I V E R M O D U L E V2.0 Features Frequency Range 433/868/915MHz ISM bands Sensitivity = –120 dBm Output power range +30 dBm Max RFM23BP Low Power Consumption 25 mA receive 550 mA @ +30 dBm transmit Data Rate = 0.123 to 256 kbps

ac3n

Abstract: A25473S
Contextual Info: SILICONIX INC 03 8254735 j j * SILICONIX ~ M r |ß E 5 4 7 3 5 0015500 0 3E ING 1 12 5 0 0 D • r 5 7 ^ 7 - u ^ S j7 2 4 0 Siliconix incorporated 12-Bit CMOS Voltage-Output DAC FEATURES BENEFITS APPLICATIONS • Fast Voltage Settling Time: 550 ns to 0.01%

1n5399 equivalent

Abstract: scr rca 40A GTO thyristor rca thyristor D2101 G5001A SCR GTO 1N2862 D3202 S3901S
Contextual Info: 1TR Product Matrix GTO Product Matrix For H o rizontal-D eflectîon Circuits TO-22ÛAB P <3 RCA ITR's * TO 3 VERSAW A TT Com m utating Retrace 8A 'T(RM S) 'TSM (60 Hz) 'T(D C ) 'TSM <60 Hz) Com m utating (Retrace) 8A 100A Trace 8A 100A 100A 400 450 500 550

PIN Photodiode For CATV Receiver

Abstract: 2610B CATV MHW 2610A
Contextual Info: ORTEL CORP 45E D H bfllTô'iS DDDD21Ô S B30RT ¿ m m DataSheet ^ 111^ c o r p o r a t i o n _ ,_ T~- t / f - O l 2610A/B Broadband Photodiode Module • • • • 10-550 MHz High responsivity >0.85 A/W Impedance matched output, 7 dB gain

d 331 TRANSISTOR equivalent

Abstract: RCA-40934 rca transistor rca 40934 RCA 40934 transistor 100 watt hf transistor 12 volt 7470 ic 300 watt hf transistor 12 volt VK20009-3B 40934
Contextual Info: File No. 550 n U fB /T n RF Pow er Transistors Solid State Division 40934 High-Pow er Silicon N -P -N V H F /U H F Transistor 1 2 .5 -V o lt T y p e F o r Class C A m p lifie r A pp licatio n s Features: • Low-inductance radial leads — particularly useful for stripttne circuits

Contextual Info: ADVANCE INFORMATION Semiconductor ju iy 1998 LM X 2 3 5 0 / L M X 2 3 5 2 P L L a t i n u m F r a c t io n a l N RF I In t e g e r N IF Dual L o w P o w e r F r e q u e n c y S y n t h e s i z e r LM X2352 1.2 G Hz/550 M Hz General Description For 1he RF PLL, a highly tlexible 16 level program m able

Contextual Info: P L3 : 50 m ating C ycle s No G a s T e st P erform ance Level P L2 : 250 m ating C ycle s 4 d ays G as T e st S4 : 0,7 6p m A u or equivalent PdNi P art N um ber P art N um ber P art N um ber Nb of C ontacts 06 10 14 16 20 26 30 34 40 50 60 64 06 10 14 16