S-550 EQUIVALENT Search Results

F25NM50N

Abstract: W25NM50 p25nm50 B25NM50N p25nm50n W25NM STP25NM50 W25NM50N
Contextual Info: STx25NM50N N-channel 500 V, 0.11 Ω, 22 A MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247 Features Type VDSS @Tjmax RDS(on) max ID 3 ) s ( ct 3 STB25NM50N 550 V < 0.140 Ω 22 A STB25NM50N-1 550 V < 0.140 Ω 22 A STF25NM50N 550 V < 0.140 Ω

a7125

Abstract: A745 MAGNETIC HEAD circuit Differentiator peak detect
Contextual Info: m^ _ ù M M SSI 550 4-Channel Magnetic Tape Read Circuit s _ k m s "in n o v a t oDRS r s in in t e g r a t io n IN //iN Preliminary Data Sheet GENERAL DESCRIPTION FEATURES Silicon System s’ SSI 550 combines magnetic tape head read signal a m plification and processing onto a single

Transistor - BC 547, CL 100

Abstract: bc 104 npn transistor transistor C 548 B bc 408 equivalent BC548BC bc 558 equivalent bc 103 transistor c 548 equivalent of BC 399 NPN Transistor TRANSISTOR C 557 B
Contextual Info: BC546*BC 547 *BC 548 *BC549. BC 550 NPN S IL IC O N TR A N S IS T O R T R A N S IS T O R N P N S IL IC IU M Compì, of BC 556 at 560 Preferred device D is p o s itif recommandé General purpose BC 546/BC 547/BC 548 Usage général BC 546/BC 547/BC 548 Low noise BC 549/BC 550

C 548 B

Abstract: B549C BC650 C 547 B TRANSISTOR BC650 transistor bc 549 equivalent transistor C 548 B C547B TRANSISTOR BC 550 c transistor c 548
Contextual Info: asc D • fi 23S hü S Q Q Q m S Q T M S I E G _ T - 2~ 9 ~ Z / NPN Silicon Transistors BC 546 - BC 550 SIEMENS AKTIENGESELLSCHAF . 25C 04190 D - BC 546, BC 547, BC 548, BC 549 and BC 550 are epitaxial NPN silicon planar transistors in TO 92 plastic packages 10 A 3 DIN 41868 . They are intended for use in AF input and

A775

Abstract: a7125 A7-12 A7-13 DC DC INPUT 24V OUTPUT 8V magnetic tape head preamplifier A7525 A7325 a7725
Contextual Info: SiliconMkms SSI 550 4-Channel Magnetic Tape Read Circuit INNOVATORS IN / INTEGRATION Preliminary Data Sheet GENERAL DESCRIPTION FEATURES Silicon System s’ SSI 550 combines magnetic tape head read signal am plification and processing onto a single integrated circuit. The device accepts up to 4 centertapped m agnetic read heads connected directly to the

M3-125-SAT

Abstract: INGT165B INGR165B finisar app note FINISAR TOP MARKING v23826-k305 5179009-6
Contextual Info: PRODUCT DATASHEET Order this document by ING_TRF_DS The GigaSTaR optical piggyback board ING_TRF represents an easy-to-use implementation of a full-duplex GigaSTaR High-Speed link with 2.64 Gbit/s 2 x 1.32 Gbit/s bandwidth for long distance transmission (up to 550 m) on multimode

Contextual Info: LM X 2306, L M X 2 31 6, LM X 2326 LMX2306/LMX2316/LMX2326 PLLatinum Low Power Frequency Synthesizer for RF PersonalCommunications LMX2306 - 550 MHz LMX2316 -1.2 GHz LM X 23262.8 GHz Te x a s In s t r u m e n t s Literature Number: SNAS016F t OBSOLETE a l

mc 4011

Abstract: MIL-S-19500 1N6304 1N6305 1N6306 DO-203AB
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be cotrpleted by 30 September 1994 INCH-POUND MIL-S-19500/550A 30 June 1994 SUPERSEDING MIL-S-19500/550 USAF 21 Dec enter 1981 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DI00E, SILICON, FAST-RECOVERY, HIGH CURRENT

Contextual Info: 61 1 59 50 MI CROSEMI CORP/POWER - !- OS 02E 00514 D 7 DE I b l l S T S D Q O G D s m ~'33~ZeT □ M~ CCC6003 TECHNOLOGY 15 A, 550 V, NPN Darlington Power Transistor Chip • Triple Diffused, Glass Passivated ■ Contact Metallization: Base and emitter-aluminum

DAC8850

Abstract: Texas Instruments 8010 *C8550 DAC85501 DAC8550
Contextual Info: DA C8 550 DAC8550 www.ti.com SLAS476E – MARCH 2006 – REVISED MARCH 2012 16-BIT, ULTRA-LOW GLITCH, VOLTAGE OUTPUT DIGITAL-TO-ANALOG CONVERTER Check for Samples: DAC8550 FEATURES 1 • Relative Accuracy: 3LSB • Glitch Energy: 0.1nV-s • MicroPower Operation:

DAC8850

Abstract: sk 8010 DAC8550
Contextual Info: DA C8 550 DAC8550 www.ti.com SLAS476E – MARCH 2006 – REVISED MARCH 2012 16-BIT, ULTRA-LOW GLITCH, VOLTAGE OUTPUT DIGITAL-TO-ANALOG CONVERTER Check for Samples: DAC8550 FEATURES 1 • Relative Accuracy: 3LSB • Glitch Energy: 0.1nV-s • MicroPower Operation:

DAC8550

Contextual Info: DA C8 550 DAC8550 www.ti.com SLAS476E – MARCH 2006 – REVISED MARCH 2012 16-BIT, ULTRA-LOW GLITCH, VOLTAGE OUTPUT DIGITAL-TO-ANALOG CONVERTER Check for Samples: DAC8550 FEATURES 1 • Relative Accuracy: 3LSB • Glitch Energy: 0.1nV-s • MicroPower Operation:

DAC8550

Contextual Info: DA C8 550 DAC8550 www.ti.com SLAS476E – MARCH 2006 – REVISED MARCH 2012 16-BIT, ULTRA-LOW GLITCH, VOLTAGE OUTPUT DIGITAL-TO-ANALOG CONVERTER Check for Samples: DAC8550 FEATURES 1 • Relative Accuracy: 3LSB • Glitch Energy: 0.1nV-s • MicroPower Operation:

DAC8550

Contextual Info: DA C8 550 DAC8550 www.ti.com SLAS476E – MARCH 2006 – REVISED MARCH 2012 16-BIT, ULTRA-LOW GLITCH, VOLTAGE OUTPUT DIGITAL-TO-ANALOG CONVERTER Check for Samples: DAC8550 FEATURES 1 • Relative Accuracy: 3LSB • Glitch Energy: 0.1nV-s • MicroPower Operation:

Contextual Info: SANKEN ELECTRIC CO LTD STA304A 5SE D • TTTGTm □ D D l G EJi4 i^b ISAKJ Under development Silicon NPN Triple Diffused Planar [Maximum Ratings (Ta = 25°C) ÉâV J Î ï .*: s s m n C ollector-to-B ase Voltage VCBO 550 V C ollector-to-E m itter Voltage

ATA06211

Abstract: ATA06211D1C
Contextual Info: ATA06211 AGC Transimpedance Amplifier SONET OC-12 PRELIMINARY DATA SHEET-Rev 4 FEATURES • Single +5 Volt Supply · Automatic Gain Control · -32 dBm Sensitivity · 0 dBm Optical Overload · 550 MHz Bandwidth APPLICATIONS · SONET OC-12 /SDH STM-4 622Mb/s

HP5385A

Contextual Info: a t i o n a l S e m i c o n d u c t o r S eptem ber 1999 LMX2306/LMX2316/LMX2326 PLLatinum Low Power Frequency Synthesizer for RF Personal Communications LMX2306 550 MHz LMX2316 1.2 GHz LMX2326 2.8 GHz General Description Features The LM X 2306/16/26 are m onolithic, integrated frequency

Contextual Info: • Transistor Arrays STA Type No Ve» m-' ma le (V ) ' 60 ± 10 4'8 1000 S T A 3 0 2A —50 - 4 - 8 1000 STA3Q 3A 100 4 8. 1000 S T A 3 0 4A 550 1 2 S T A 3 1 2A ~~ S T A 3 2 2A 100 4 8 1000 io S T A 4 0 4A 200 3 6 1000 IO S T A 4 0 6A 0^10 6 2000 S T A 4 0 7A

dyna image

Abstract: 7864
Contextual Info: a iE i Q S b 072 Q O G Q n ? D 1 — 127- T H O M S O N MIL ET S P A T I A U X TH 7864 Ho] H9J usj L12J LtâJ 115J Ht! Lül Lül lüJ Area Array CCD* Image Sensor TH 7864 576 x 550 Pixels with Antiblooming Fully Compatible Standard with CCIR TV Image 2/3"

features cypress flash 370

Abstract: cypress flash 370 device cypress flash 370
Contextual Info: Revision: Monday, January 4,1993 57E D • 550=1^2 □ D D tlQ21 573 ■ CYP 07 CY7C373 C VPRESS SEMICONDUCTOR PRELIMINARY 7M CYPRESS SEMICONDUCTOR 64-Macrocell Flash PLD perform ance o f the 22V10 to high-density PLD s. Features • 64 m acrocells in four logic blocks

Contextual Info: _ S TR ATO -TH ERM Terminals & Splices for High Temperature Applications Catalog 1307612 Revised 7-01 Product Facts • Product available in tem­ perature ranges of 500°F t f e t m , 550°F [288°C], 650°F[343°C] and 1200°F [649°C] ■ Product employs the

Contextual Info: S'IE D • =iGSt.a75 0 G 0 0 2 Q S 4 t - w - s s " — 135 — THOMSON MIL ET SPATIAUX [ 20 J |19J ia j |7J [I 6 J H5j Area Array CCD* Image Sensor TH 7866 LuJ l l i l Lui luJ TH 7866 488 x 550 Pixels with Antiblooming • m m m m m mr Ti mmi i öi II Compatible with EIA RS170 TV Stan­

Contextual Info: CY7C185 CY7C186 CYPRESS SEMICONDUCTOR 8 ,1 9 2 x 8 Static R/W RAM Functional Description Features A u tom atic pow er-dow n w hen d eselected C M O S for op tim u m sp eed /p ow er H igh speed — 20 ns Low active power — 550 mW Low S tan d b y Pow er — 110 mW

sm 4109 smd

Contextual Info: CY7C251 CY7C254 0 CYPRESS Features • C M O S for optim um speed/power • W indowed for reprogram m ability • High speed Low power — 550 mW com m ercial — 660 mW (m ilitary) • • D irect replacem ent for b ipolar PR O M s • C apable o f w ith stan d in g > 2 0 0 1 V