S 82 Search Results

471kd14

Abstract: 431kd14 201KD14 271KD14 471KD20 511kd14 471KD14 varistor 181KD14 391KD14 431kd20
Contextual Info: S Series Super High Surge Part No. 182KD14-S 152KD14-S 112KD14-S 102KD14-S 911KD14-S 821KD14-S 781KD14-S 751KD14-S 681KD14-S 621KD14-S 561KD14-S 511KD14-S 471KD14-S 431KD14-S 391KD14-S 361KD14-S 331KD14-S 301KD14-S 271KD14-S 251KD14-S 241KD14-S 221KD14-S

diode zener ZD 153

Abstract: zener zd 501 diode zener ZD 103 zener diode 562 CRD Diode diode zener ZD 101 crd e102 DIODE S202 E-152 E-452
Contextual Info: Power derating Pinch-off current Temperature The compensation of current reduction due to self heating 100 Pinch-off current mA 400 350 300 S-183 S-153 S-123 S-103 S-822 10 S-562 S-452 S-352 S-272 S-202 S-152 S-102 S-701 S-501 S-301 250 200 1.0 150 100 S-101

Contextual Info: WIRE-WOUND CHIP INDUCTOR - FERRITE/OPEN TYPE A C L IcI Part Number 1210H S-121EFS 1210H S-151EFS 1210H S-181EFS 1210H S-221EFS 1210HS-271E FS 1210H S-331EFS 1210H S-391EFS 1210H S-471EFS 1210H S-561EFS 1210HS-681E FS 1210H S-821EFS 1210H S -102E F S 1210HS- 1 2 2 E F S

38XF

Abstract: S-8435
Contextual Info: CMOS IC PACKAGE TABLE A UNIT: mm E SC-82AB SC-88A E 2.1 D 2.0 A 1.1max S-808XXNP S-8110/20XNP SOT-23-3 E 2.1 D 2.0 A 1.0max S-75VXXANC S-75LXXANC SOT-23-5 S-808XXMP S-807XXSX S-809XXMP S-812XXSG S-816AXXAMC S-8321/22AXMP S-8323/27/24/28XXMC S-8520/21XXMC 8MSOP

SIEMENS saw sensor

Abstract: c619 siemens matsua saw 45 S 867
Contextual Info: Index of Types Type Page C C 619 C 620 C 621 Page S 39 41, 42 43, 44 K K 1150 K 164 K 220 K 227 K 276 K 350 K 45 K 500 Type 45 49, 50 46 64 74 47 72, 73 68 S 153 S 235 S 236 S 237 S 238 S 364 S 464 S 861 S 863 S 867 S 869 S 891 76 77 78, 79 80 81, 82 83 84

82C11

Abstract: um82c11 82450 um82290 AN/parallel port 378
Contextual Info: I UMC UM82290 ~S S S S S S S S S sin9ie- ° hip Muiti-i/o y Features • An integrated chip of PC/AT serial/parallel add-on card. ■ Including 2 serial ports 82450 ■ Also including 1 print port (UM82C11) ■ And also I/O decoder included. General Description

powerblock dd 82 S 800

Abstract: powerblock dd TT 46 tt200f
Contextual Info: Fast Powerblock Modules Fast Diodes VRRM = 400 800 1200 1600 2000 2400 Fast Thyristors V RRM = 200 DD 46 S TT 46 F DD 61 S TT 71 F DD 62 S TT 81 F DD 81 S TT 101 F DD 82 S TT 111 F DD 121 S TT 180 F DD 122 S TT 200 F DD 230 S TZ 285 S DD 241 S TZ 335 F DD 242 S

Contextual Info: PACKAGE OUTLINES Page S O D 84 408 S O D 100 409 S O D 106 410 SO D 113 411 S O T 82 412 S O T 93 413 S O T 186 414 S O T 186A 415 S O T 1 99 416 S O T 223 417 SO T404 418 T O 2 20A B 419 T O 220A C 420

Contextual Info: NOTES: 2. 3. 4. R E V 1S I O N S 82-6348 DRAWING M A T E R I A L S OF C O N S T R U C T I O N : BODY - S T A I N L E S S S T E E L , P A S S I V A T E D HEX NUT, - B R A S S A S T M - B 1 6 H 0 2 , C 3 6 0 0 0 , N I C K E L P L A T E D ( . 0 0 0 0 8 0

ZBSC-8-82

Contextual Info: 8 Way-0° Power Splitter/Combiner ZBSC-8-82+ Typical Performance Curves Isolation Insertion Loss 80 13.5 Insertion Loss S-1 Insertion Loss S-2 75 13.0 Insertion Loss S-3 Insertion Loss S-4 70 12.5 Insertion Loss S-5 Insertion Loss S-6 12.0 Insertion Loss S-8

D2L DIODE

Abstract: D4L DIODE 74fct2823 74fct2821 diode d2l 48
Contextual Info: Q Q S 54/74FC T821 q s s 4 /7 4 f c t 823 q s 5 4 /7 4 f c t s 25 H ig h S p e e d C M O S B u s In te r fa c e 8 , 9 & 1 0 -b it R e g is te r s Q S 54/74F C T 2821 q s 5 4 /7 4 f c t 28 23 Q S 54 /7 4F C T 28 25 FEATURES/BENEFITS • Pin and function compatible to the 74F821/3/5

powerblock dd 82 S 800

Abstract: thyristor tt 121 powerblock thyristor DATASHEET diode S 335 TT 46 powerblock dd thyristor thyristor modules thyristor TT 46
Contextual Info: Fast Powerblock Modules Fast Diode Modules VRRM = 400 800 Fast Thyristor Modules 1200 1600 2000 2400 VRRM = 200 600 1000 1400 TT 46 F DD 46 S TT 71 F DD 61 S TT 81 F DD 62 S TT 101 F DD 81 S TT 111 F DD 82 S TT 180 F DD 121 S TT 200 F DD 122 S TZ 285 S DD 230 S

ZBSC-8-82

Contextual Info: 8 Way-0° Power Splitter/Combiner ZBSC-8-82+ Typical Performance Data AMP. UNBAL. dB INSERTION LOSS FREQ. S-1 S-2 S-3 (dB) S-4 S-5 S-6 S-8 10.00 30.00 50.00 60.00 80.00 100.00 120.00 140.00 160.00 180.00 200.00 220.00 240.00 250.00 300.00 350.00 400.00 450.00

B80C

Contextual Info: B EE D • ô23b32Q Q017131 T « SIP PNP Silicon Switching Transistors _ S IE M E N S / SPCLi BSS 80 S 82 T ' SEM ICO N D S _ High D C current gain Low collector-emitter saturation voltage Complementary types: B S S 79, B S S 81 NPN Type BSS

Contextual Info: R E V I S S 82-5956-RFX NOTE: DRAWI NG M A T E R I A L S OF C O N S T R U C T I O N : S H E L L , O U T E R 3 0 D V , I NNER BODY = B R A S S , N I C K E L C O N T A C T P I N , S O L D E R NUT : B R A S S , G O L D P L A T E D R E T A I N E R RING = S T A I N L E S S S T E E L , NATURAL

Contextual Info: S T S 8216 S amHop Microelectronics C orp. MAY . 12 2006 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S 20V ID R DS ON 6A S uper high dense cell design for low R DS (ON ). ( mΩ ) Max 22 @ V G S = 4.0V

8208

Abstract: s8208 S-8208
Contextual Info: S T S 8208 S amHop Microelectronics C orp. J an. 03 2006 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( mW ) Max R ugged and reliable. 27 @ V G S = 4.0V

ZBSC-8-82

Contextual Info: 8 Way-0° Power Splitter/Combiner ZBSC-8-82+ Typical Performance Data MHz 1 AMP. UNBAL. TOTAL LOSS1 FREQ. ISOLATION (dB) (dB) S-1 S-2 S-3 (dB) S-4 S-5 S-6 S-8 10.00 30.00 50.00 60.00 80.00 100.00 120.00 140.00 160.00 180.00 200.00 220.00 240.00 250.00 300.00

8205E

Contextual Info: S T S 8205E S amHop Microelectronics C orp. J an. 03 2006 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( mW ) Max R ugged and reliable. 30 @ V G S = 4.0V

8203-E

Contextual Info: S T G 8203E S amHop Microelectronics C orp. J an. 10 ,2008 V er1.0 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON R ugged and reliable. S urface Mount P ackage. E S D P rotected. 27.5 @ V G S = 4.0V

S8201

Contextual Info: S T S 8201 S amHop Microelectronics C orp. J an. 03 2006 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( mW ) Max R ugged and reliable. 27 @ V G S = 4.0V

8218E

Abstract: DON10
Contextual Info: S T S 8218 S amHop Microelectronics C orp. J UN. 29 2006 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S 20V ID R DS ON 6A S uper high dense cell design for low R DS (ON ). ( mΩ ) Max 22 @ V G S = 4.0V

SN74AS821

Abstract: bd 9d 916J AM29821 D2825 SN54AS821 SN54AS822 SN74AS822 I9101
Contextual Info: S N 54A S 821, S N 54A S 822, S N 74A S 821, S N 74A S822 10 BIT BUS INTERFACE FLIP-FLOPS W ITH 3-STATE OUTPUTS D 2 8 2 5 , D E C E M B E R 1 9 8 3 - R E V IS E D J A N U A R Y 1 9 8 6 S N 5 4 A S 8 2 1 . . . J T PAC KA G E S N 7 4 A S 8 2 1 . . . D W OR N T P AC KAG E

Contextual Info: SbE D m 0041b0fl ê 3 3 « S C T H 712^237 7V/-^ ^ S G S-THONSON S G S -T H O M S O N ^ iO T @ iD g iT M M 8 2 1 , A TM M 829, A TEMPERATURE COMPENSATED ZENER DIODES N E W S E R IE A B S O L U T E R A TIN G S (limiting values P aram eter Symbol Plot Power Dissipation