S 80 W Search Results

BU180

Abstract: bu180a TIP162A tip147 T1P130 texas instruments tip35 Texas Instruments TIP36C tip142 T066 TIP110
Contextual Info: T exas In s t r u m e n t s Com plem entary Darlingtons > Device Type O O cj V 60 80 100 60 80 100 60 80 100 60 80 100 60 80 100 60 80 100 60 80 100 60 80 100 200 V 60 80 100 60 80 100 60 80 100 60 80 100 60 80 100 60 80 100 60 80 100 60 80 100 200 ouu o w

AA1282HX-AT

Abstract: AA1752MB-AT AA1281UX-AW AA1281HB-AT AA1251MS-AT ADDA USA AA1252MS-AT AA8251MB-AT AA1281HX-AT AA128
Contextual Info: ADDA USA AC FAN SPECIFICATIONS Frame Size Model Part No. Bearing Type 80 X 80 X 25 AA8251MB-AT AW B,S,or X 80 X 80 X 25 AA8252MX-AT(AW) B,S,or X 80 X 80 X 38 AA8381HS-AT(AW) B,S,or X 80 X 80 X 38 AA8381MS-AT(AW) B,S,or X 80 X 80 X 38 AA8382HS-AT(AW) B,S,or X

SF5D14

Abstract: SF10D41 SF5D42 SF5J13 SF5J42 SF10GZ47 SF8D41 SF8J41 SF5B42 SF5D13
Contextual Info: - 18 - * 5È di/dt 121 It s m 1 50Hz) t=2-10ms Tj Vd (A) (A2 S) (V) (V//< s) (°C) 80 32. 00 60 18. 00 90 40. 00 80 32. 00 100 80 32. 00 100 au 32. 00 60 18. 00 60 18. 00 90 40. 00 80 32. 00 100 80 32. 00 100 oo nn 80 L. \jyj 80 100 1/2VDRM 32. 00 60 18. 00

2SD797Y

Abstract: 2SD1041 str5 1561-1008 pt2909 1561-1010 IR802
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A fT t0N r hFE 'CBO Max Max Max on ON) Min (HZ) (A) (s) Max (Ohms) 80 80 80 80 80 80 80 80 80 80 175 175 175 175 175 175 175 175 175 200 80 200 V (BR)CEO PD (CE)sat Toper Max (°C)

Contextual Info: GEC PLESSEY SEMICONDS 12 II • 37b855E 0001630 S H P L S B T -Ü S -W -I3 SP8792A 200MHz + 80/81 SP8793A 200MHz + 40/41 The SP8792A and SP8793A are low power programmable +80/81 and +40/41 counters w hich operate over the full M ilitary tem perature range. They divide by 80 40 when the

diode Z47

Abstract: z43 diode Z5.6 Z3.3 S360 DIODE 02CZ5 diode Z27 S368 diode zener z6 1s diode
Contextual Info: Diodes Signal Diode for General Purpose R atino V r V lo im A ) Switching Diode Schottky Barrier Diode Zener Diode use S-M IN I (SOT-23MOD) BO 80 — — _ — HN2D01FU _ 80 80 _ — — — HN2D02FU BO 80 80 — ssc SS M use 1SS362 1S S368 USM — 1S S 352

Contextual Info: GEC PLESSEY S i S E M I C O N D U C T O R S DS 3294- 1 SP8792 225MHz -5- 80/81 SP8793 225MHz -s- 40/41 WITH ON-CHIP VOLTAGE REGULATOR The SP8792 AND SP8793 are low power programmable +80/81 and +40/41 counter, tem perature range: -40°C to +85°C.They divide by 80 40 w hen control input is in the high

Contextual Info: MCC 8 0 AMPERE S C H O TTK Y / M IN IM O D -SM / SURFACE M O U N T FST8120SM FST8130SM FST8135SM FST8140SM FST8145SM FST8160SM FST8180SM FST81100SM 20 30 35 40 45 60 80 100 80 80 80 80 80 80 80 80 110 110 110 110 110 110 110 110 800 800 800 800 800 800 800

TC4009UBR

Contextual Info: TC4008BP DYNAMIC ELECTRICAL CHARACTERISTICS Ta=25°C, V S s=OV, CL= 50P F CHARA C T E R I S T I C SYMBOL MIN. TEST COND I T I O N V DD TYP. MAX. 80 200 UNIT (V) 5 _ 10 - 50 100 15 _ 40 80 5 _ 80 200 10 - 50 100 - 40 80 Output Tr a n s i t i o n Time (Low to High)

MMBTA55

Abstract: MMBTA56
Contextual Info: MMBTA55 MMBTA56 Driver PNP 3 1 2 SOT-23 V CEO MMBTA55 -60 -60 -4.0 -5 MMBTA56 -80 -80 -4.0 MMBTA55=2H, MMBTA56=2GM - 3 MMBTA55 MMBTA56 -60 -80 - MMBTA55 MMBTA56 -60 -80 - -4.0 I B =0) -6 -8 S MMBTA55 MMBTA56 _ 300us, Duty Cycle < _ 2.0% 3.Pulse Test:Pulse Width <

Contextual Info: PBfflIGEC P L E S S E Y DS 3294- 1 SP8792 225MHz h- 80/81 SP8793 225MHz + 40/41 WITH ON-CHIP VOLTAGE REGULATOR TheSP8792AN D SP8793 are low power programmable +80/81 and +40/41 counter, temperature range: -40°C to +85°C.They divide by 80 40 when control input is in the high

1GM sot-23

Abstract: MMBTA05 MMBTA06
Contextual Info: MMBTA05 MMBTA06 Driver NPN 3 1 2 SOT-23 VCEO MMBTA05 60 60 4.0 MMBTA06 80 80 4.0 MMBTA05=1H, MMBTA06=1GM 3 MMBTA05 MMBTA06 60 80 MMBTA05 MMBTA06 60 80 4.0 I B =0) 6 8 S MMBTA05 MMBTA06 0.1 u 0.1 0.1 u 3.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2.0%

C120H04Q

Abstract: CTB23L CTG-34S 273B C120H05Q C60P40FE CTB-24L CTG-31S tv 11s CTG21S
Contextual Info: - *Ì » £ C60P40FE C80H03Q C80H04Q C80H05Q C80H06Q tt £ B * W - B * i '/ 9 B X i 'J h B * 4 '/ 9 - Pr s m Vr s m kf (V) I # £ H Vr Vj Io (V) (V) (V) (A) V 440 35 45 55 65 400 30 40 50 60 60 80 80 80 80 35 45 55 65 35 30 40 50 60 30 120 120 120 120

CT011

Abstract: CTG-34S RJi 30 h1 273B C120H04Q C120H05Q C60P40FE CTB-24L CTG-31S tv 11s
Contextual Info: - *Ì » £ C60P40FE C80H03Q C80H04Q C80H05Q C80H06Q tt £ B * W - B * i '/ 9 B X i 'J h B * 4 '/ 9 - Pr s m Vr s m kf (V) I # £ H Vr Vj Io (V) (V) (V) (A) V 440 35 45 55 65 400 30 40 50 60 60 80 80 80 80 35 45 55 65 35 30 40 50 60 30 120 120 120 120

CT011

Abstract: CTB24L CTG-34S C120H04Q CTB34M CTG-33S CTB-34 1 273B C120H05Q C60P40FE
Contextual Info: - *Ì » £ C60P40FE C80H03Q C80H04Q C80H05Q C80H06Q tt £ B * W - B * i '/ 9 B X i 'J h B * 4 '/ 9 - Pr s m Vr s m kf (V) I # £ H Vr Vj Io (V) (V) (V) (A) V 440 35 45 55 65 400 30 40 50 60 60 80 80 80 80 35 45 55 65 35 30 40 50 60 30 120 120 120 120

4cmv

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-454BA80 4M-W ORD BY 80-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description The M C -4 54B A 80 is a 4 ,1 9 4 ,3 0 4 w o rd s by 80 b its syn ch ro n o u s d yn a m ic RAM m odule on w hich 20 p ie ce s of 16 M

skiip 11 nec 06 1

Abstract: skiip 13 nec 06 3
Contextual Info: s e MIKRO n SKiiP 11 NEC 06 - SKiiP 11 NEC 06 I Absolute Maximum Ratings S ym bol C ond itions 1 Values Units Theatsink ~ 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Theatsink = 25 / 80 °C tp < 1 ms, Theatsink “ 25 / 80 °C 600 ±20 1 4 /1 0 2 8 /2 0

RF540

Abstract: IRF540 IRF540FI b17a q02c IRF540 application IRF541 IRF541FI IRF542 IRF542FI
Contextual Info: r z 7 SCS-TH O M SO N ^7# R{flO IS i[L[i®irMD©i S G S -T H 0M S 0N TYPE IRF540 IRF540FI IRF541 IRF541FI IRF542 IRF542FI IRF543 IRF543FI V dss 100 V 100 V 80 V 80 V 100 V 100 V 80 V 80 V ^DS on 0.077 fi 0.077 fi 0.077 fi 0.077 fi 0.100 fi 0.100 fi 0.100 Q

MSM6599B

Abstract: MSM6698 QFP100-P-1420-0
Contextual Info: E2B0024-27-Y2 OKI Semiconductor MSM6599B This version: Nov. 1997 Previous version: Mar. 1996 80-DOT S E G M E N T DRIVER GENERAL DESCRIPTION The MSM6599B is a dot matrix LCD segment driver LSI which consists of two 80-bit latches, an 80-bit level shifter and an 80-bit 4-level driver.

Si4896DY

Abstract: Si4896DY-T1
Contextual Info: Si4896DY Vishay Siliconix N-Channel 80-V D-S MOSFET PRODUCT SUMMARY VDS (V) 80 rDS(on) (W) ID (A) 0.0165 @ VGS = 10 V 9.5 0.022 @ VGS = 6.0 V 8.3 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4896DY Si4896DY-T1 (with Tape and Reel)

Contextual Info: • /* Photo Interrupters N SUN LED El«îctrical Data Shape * Part No. Material Peak Wave Length nm CTR Rise Time (us) Typ. Fall Time (us) Typ. Figure No. 1 80 70 13 - 80 70 14 - 80 70 15 1 80 70 16 V c E (S A T ) IF(mA) I Min.(%) IF(mA) ; IC(mA) Max.(V)

HV7708PG

Abstract: HV77 HV577
Contextual Info: HV77 yj Supertax inc. h v s ? HV79 32 MHz, 64-Channel Serial To Parallel Converter With Push-Pull Outputs Ordering Information Package Options Device 80 Lead Quad Ceramic Gullwing 80 Lead Quad Plastic Gullwing Die 80 Lead Quad Ceramic Gullwing MIL-STD-883 Processed*)

Contextual Info: Weller DSX 80 80 Watt Desoldering Tool For WR3M Rework Station Product Details Catalog No. UPC Code Fits Station Wattage Temperature Range Voltage Supplied Tip s Iron Stand 0051319099 037103225276 WR3M 80 W 150° F to 850° F 24 V DX112 (0051314299) WDH30

Contextual Info: S P SPT7868 T 10-BIT, 80 MSPS A/D CONVERTER SIGNAL PROCESSING TECHNOLOGIES ADVANCE INFORMATION FEATURES APPLICATIONS • Target Sample Rate: 80 MSPS at 340 mW • 9.2 Effective Number of Bits at / iN = 15 MHz and / s = 80 MSPS • Full-Scale Input Range = 2 VP.P