S 3240 Search Results

3050c

Abstract: 3090c A 3050C SI-3050CA 3120C 3240c SI-3090CA SI-3120C A 3120c -3090C
Contextual Info: SI — 3000C '> U — X 1.5A l * * 5 Ë f ê T , = 25*C )-V / aí : 35V (SI-3050C , S I-3090C ) 40V (SI-3120C , SI-3150C ) 45V (SI-3240C ) V t2 : 35V (SI-3050C , S I-3090C ) 40V (SI-3120C , S I-3150C ) 45V (SI-3240C ) lo u r : 1.5A f i f a » 'J'M tD 5 S S i i / 'J - X • ' / Í j i z - J í t , ' J i ~ h •

Contextual Info: IF IN DOUBT - ASK DRAWING No.:- H2073Z01 S fN — <S> <s + i r\ rv s> CD s> S> S> + + T T NOT TO SCALE R 0.50 THIRD ANGLE PROJECTION A L L DIMENSIONS IN mm 1.57 KNURL APPROX 0.40 PITCH OUTSIDE (S CD l> CN Q \ <S> N N . A7///A t l\ CO (N Si I V s' f r*-

3240B

Contextual Info: Ordering num ber:EN 3240B ^_ 1 S S 3 5 1 Silicon Epitaxial Schottky Barrier Diode U H F Detector, M ixer Applications F eatu re s • Series connection of 2 elements in a small-sized package facilitates high-density mounting and permits lSS351-applied equipment to be made smaller.

ELM32405LA-S

Abstract: SS510
Contextual Info: Single P-channel MOSFET ELM 32405LA-S • General description B F e a tu re s ELM32405LA-S uses advanced trench technology to provide excellentRds on , low gate charge and low gate resistance. • Vds=-30V • Id=-12A • Rds(on) < 45mQ (Vgs=-10V) • Rds(on) < 75mQ (Vgs=-4.5V)

250M

Contextual Info: Single N-channel MOSFET ELM 32406LA-S • General description B F e a tu re s ELM 32406LA-S u ses ad vanced tre n c h te c h n o lo g y to provide excellent Rds on , low gate charge and low gate resistance. • Vds=25V • Id=65A • Rds(on) <8.5m Q (Vgs=10V)

Contextual Info: Single P-channel MOSFET ELM 32403LA-S • General description B F e a tu re s ELM 32403LA-S u ses ad vanced tre n c h te c h n o lo g y to provide excellent Rds on , low gate charge and low gate resistance. • Vds=-40V • Id=-8A • Rds(on) < 55mQ (Vgs=-10V)

Contextual Info: 33 h W S S S S December 1992 H S -8 2 C 3 7 A R H Radiation Hardened CMOS High Performance Programmable DMA Controller Pinouts Features 40 DIP 38510 OUTLINE D5, CONFIGURATION 3 TOP VIEW • Radiation Hardened - Total Dose >105 RAD Si - Transient Upset > 10 RAD(SI)/s

iC-NK

Contextual Info: •/ 5 0 /■&. a* * r r /?/<*£ COS’SK/? TUBS S'/AS/J'r/ss S/ -*z.sir£-0 COA'£>t/C7~Q*. - * 2 0 - / + S j/R C R A F T C A 0 L C S ¿ frrt’AV/w? yjs j/votv/v f N S TAL L A T lO /s/ TOOL R£F£R£NC£S FA 2 I 8 1 S //V7?< TX NO. 2 .- /*~. £ > . O S /

Contextual Info: £ F IL A M E N T R E P L A C E M E N T L E D s - T1 • D ir e c t r e p la c e m e n t fo r T 1 M F S X 3 s 6 .0 J I o CO Q 2 .0 -HL [D • F it s p r o fe s s io n a l a n d m ilit a ry s t y le p u s h b u tto n s I • R e v e r s e p o la rity o p t io n s

54LS244

Contextual Info: M MOTOROLA M ilita ry 5 4 L S 2 4 4 O c tal Buffer/Line D river W ith 3 -S ta te O utputs (N on-Inverting) fe s É Îte ié M ELECTRICALLY TESTED PER: Ml L-M-38510/32403 M llll The 54LS244 is an Octal Buffer and Line driver designed to be employed as a memory address driver, clock driver and bus oriented

NEF-2A

Contextual Info: REV IS IO N S REV 1 - 1 DESCRIPTION INITIAL RELEASE | □ATE 0 5 /1 4 /0 4 1 APPROVED 1 A,D.M. . S ' s t s . s ' Sj V ////M 9/32-40 NEF-2A .375 HEX SPACER LDCKWASHER NOTES: FLAT WASHER MATERIALS: PROPRIETARY INFORMATION NOT TO BE RELEASED WITHOUT WRITTEN PERMISSION

2n3055

Abstract: 2N3238 2N4211 2N3667 2N3055 TO-3 2N3235 2N3236 2N3239 2N3240 2N5412
Contextual Info: E L E C T R O N IC S , IN C . COLLECTOR CURRENT = V C E O s u s V o lts D e v ic e N o C áse v CBO V o lts 2N 3055 JA N 2N 3055 JT X 2N 3055 2N 3235 2N 3236 2N 3238 2N 3239 2N 3240 2N 3667 2N 5412 2N 5881 2N 5882 2N 6253 2N 6254 2N 6470 2N6471 2N 6472

ic DPD

Abstract: CS5336 vk200 philips GS53 cs53379
Contextual Info: CRY S TA L S E M I C O N D U C T O R 3fiE ]> B 254b324 00030^0 dÛÊ0 ¡3Si£2~3F£<•’ S m £Z3r^r3r^sk a e s z b m w B B os? ^ a B & m r fl S H C Y S CS5336 CS5337 CS5338 CS5339 Semiconductor Corporation 16-Bit, Stereo A/D Converters for Digital Audio

EGD06-08

Abstract: EGG06-08 M21CA EGE06-04 EGH16-16 EGN13-16 EGE16-08 EGG06-04 EGD06-06 EGP13-16
Contextual Info: - 44 - S Sä 2 tt g Vr s m V Vr r m VnR M (V) It c a v ) Te ("O (A) 5E I*t It s m (¿*n (50Hz) t = 2 - 1 0 m s (A) (A2 S) d i/ dt (Vß fé PGM Tj s) (°C) Vd (V) (W) P g c a v j VGR M Ig f m Tj Tstg Ir r m 1R D U (V) (A) (“O CC) (mA) (f) Tj CC) EGD06-06

27mhz remote control transmitter circuit

Abstract: LLC resonant full bridge schematic 27mhz remote control transmitter schematics resonant half bridge schematic 5 pin iso mini relay with 12 volts 0.1 uF non polarized capacitor FERRITE TRANSFORMER ee capacitor 0,22uf 275 ac x2 TRANSISTOR FS 2025 LEONE RELAY sc5
Contextual Info: AN93 S i 2 4 9 3 / S i 2 4 5 7 / S i 2 4 3 4 / S i 2 4 1 5 / S i 2 4 0 4 M o d e m D e s i g n e r ’s G u i d e Introduction double-sided and single-sided layouts with options for through-hole isolation components. Additionally, evaluation boards, useful for evaluating the modem

PK MUR 460

Abstract: transistor PUK 102 PK 002 bt 2N8834 221A-04 2N6648 2N6833 2N6834 50s01 M3520
Contextual Info: MQTORCLA SC 12E D I X S T R S /R F b 3 fc,7 2 S 4 GOâMbâl 4 | MOTOROLA • SEMICONDUCTOR TECHNICAL DATA 2N6833 2N6834 De s i g n e r ’ s D a t a She et 6.0 AMPERE NPN SILICON POWER TRANSISTORS SWITCHMODE III SERIES NPN SILICON POWER TRANSISTORS 4 6 0 VOLTS

2SD2159

Abstract: 2SC2500 2SC3345 2SC105 LM 3243 N 2SC3246H 2SC2879 2SC3227 2SC3225 2SC3296
Contextual Info: - m € £ tt Manuf. T y p e No. 3 ft SANYO S 2Ë TOS H IBA m NEC B ÍL H IT A C H I K ± Ü F U J IT S U fê T = s M A T S U S H IT A M IT S U B IS H I □ — ROHM 15 7 A 2SD 966 2SC3242A 2S Ü 1384 2SD 667 2S C 1 059 2 S C 3 244 2S C 2 061 2S C 2 611 2S C 2 637

34992

Abstract: SSC5100 F232-10 pinpad 78568
Contextual Info: S-n 0 S SYSTEMS INC 5bE D • 7 cï 3 S tl D c1 G ODI Sb b SSC5000 'Ib? M S MO Series 0.8u HIGH SPEED CMOS STANDARD CELL SERIES° 7 ■ DESCRIPTION The S-MOS SSC5000 standard cell series is a 0.8 micron drawn family of standard cell circuits. It is manufactured on S-MOS’ state-of-the-art 0.8 micron double-metal N-well CMOS process. It Is comprised of 20

jd 1803 IC

Abstract: JD 1803 jd 1803 data sheet Mil JAN jm38510 Cross Reference LM 4017 decade counter driver bistable multivibrator using ic 555 UC1895 integrate JD 1803 eltek flatpack jd 1803 data
Contextual Info: R E A L MILITARY SEMICONDUCTORS SELECTION GUIDE 2002 W O R L D S I G N A L P R O S E S S I N G TM Important Information AMERICAS PRODUCT INFORMATION Product Information Center PIC . . . . . . . . . . . .(972) 644-5580 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(800) 477-8924

d2816

Abstract: d2824 d2864-xx D2822 D2832 C001XX D2808-XX
Contextual Info: □2XX X-01 / D 2 X X X -2 1 S H EET 2 OF 2 I F IN DOUBT - ASK NOT TO S CALE THIRD ANGLE PROJECTION A L L DIMENSIONS IN r CONTACTS: MATERIAL - S H E L L = BRASS CLIP = BERYLLIUM COPPER FINISH - 01 = S H E L L TIN, CLIP: GOLO 21 = S H E L L TIN, CLIPiGOLD FLASH

1990- 2335 optocoupler

Abstract: philips 3139 147 tv tuner TDA6101Q equivalent TDA3827 tda6100 ofw g 3201 ica v94 display OFW G 3352 BB515 pj 2309 smd diode
Contextual Info: Philips S em iconductors S em ico n d u cto rs fo r Television and V id eo S ystem s Contents PART A page SELECTION GUIDE Functional index 5 Numerical index 17 Maintainance list 27 GENERAL Quality 31 Pro Electron type numbering system for Discrete Semiconductors

7805B

Abstract: hyb 511
Contextual Info: SIEM ENS Contents Page In tr o d u c tio n . 8 S u m m a ry o f T y p e s incl. ordering c o d e s . 9

54LS541

Contextual Info: F ± RE V IS IO N S DATE D E S C R IP T IO N LTR Change t pHZ maximum lim i t s to 29/41 28 JAN ns and t p ^ maximum lim i t s to 18/26 1987 A APPRO VED tm yUL. ns. Convert to m ilit a r y drawing fo rm a t. Delete minimum lim i t s from I j L Make c o rre c tio n s to ta b le I Vq^ .

ha 741 ic

Abstract: lm290 ota ca 3080
Contextual Info: •3S [U L 1- INI vJ u=l -1U Hi . . . % O P E R A T IO N A L A M P L IF IE R S PAGE S E L E C T IO N G U ID E . 3 -4 O P E R A T IO N A L A M P L IF IE R S D A T A S H E E T S