S 2230 Search Results

STV-3-0

Abstract: 2SK949-M
Contextual Info: 2 S K 9 4 9 -M S IP M O S F U JI P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F - I S E R I E S Outline Drawings • Features • High speed sw itching • Low o n-resistance • No secondary b reakd ow n • Low driving p ow er • High vo ltag e

oms 450

Abstract: 2SK1086-M A2131 P channel MOSFET 10A schematic
Contextual Info: 2SK1086-M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S Outline Drawings • Features 1High current k 5 *0 2 'Low on-resistance »No secondary breakdown 2 7±0 2 >l_ow driving power 1High forward Transconductance

Contextual Info: 0rd6rNn ^ “ MOTOROLA Semiconductor Components M C10EP33 SO -8, D SUFFIX 8 - L E A D P L A S T IC S O IC P A C K A G E C A S E 751 ORDERING INFORMATION f*+ / * , t r - * * J s v ü w ' / F 1 * .v J ,v J / I vdA vj M C 10EP33D "• S O IC vü Product Preview

2SK1917

Abstract: SiC POWER MOSFET 2SK1917-M ups electrical symbols A2266
Contextual Info: 2SK1917-M S IP M O S F U JI P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET ^ • Features SER IE S ■ Outline Drawings • High speed sw itching • Low o n-resistance • N o secondary breakdow n • Low driving p o w er • High voltage • Vc,s = ± 3 0 V G uarantee

5sV80

Abstract: A2138 00GE schematic symbol for n channel fet xldr 1088-M 088-M 2sk1
Contextual Info: 2SK1088-M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S Outline Drawings • Features • High current • Low on-resistance • No secondary b reakdow n • Low driving p o w er • High fo rw a rd T ransconductance

Contextual Info: SI G E C P L E S S E Y SEPTEMBER 1997 SEMI CO NDUC TOR S DS4246-3.3 DCR1475SY PHASE CONTROL THYRISTOR KEY PARAMETERS VDRM 3000V ' , , 2220A ' 46000A dVdt* 1000V/ os dl/dt 300A/(os APPLICATIONS • High Power Drives. ■ High Voltage Power Supplies. t a v t s m

2SK1083-M

Abstract: 000201 A2126
Contextual Info: 2SK1083-M S IP M O S F U JI P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S O utline D raw ings •Features High current ♦02 4 5*0 2 Low on-resistance No secondary breakdow n Low driving p o w er 'H ig h fo rw ard T ransconductance

2MI50F-050

Contextual Info: 2MI50F-050 S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET _ _ _ - _ . M O S -F E T M O D U L E • Features • Low on-resistance • High current • Insulated to elements and metal base

2SK1659

Abstract: 2SK1659-L ajo3
Contextual Info: 2SK1 659-L,S S IP M O S " F U JI p o w e r m o s - f e t N-CHANNEL SILICON POWER MOS-FET • Features ■ O u tlin e Drawings • High speed switching • • • • Low on-resistance No secondary breakdown Low driving power High voltage ■ Applications

pj 899 diode

Abstract: pj 899 2sk mosfet DD01 it900
Contextual Info: 2 S K 1 5 1 2 MAE 1> • 52307=12 ÜDDlflES ISS C0LH1ER SEMICONDUCTOR INC Scope This specifies Fuji power MOSFET Outline I Construction Q ) Application IS ) Outview “ Ial*i£ > S 3 2 i«i "2O5 3 _j a 3 5 o 0: « ? “ &Ô “ a ORu is e t oi¿ £s § s S

Contextual Info: ERC81-004 3 a O u tlin e D ra w in g s SCHOTTKY BARRIER DIODE Features • H tf : M a rkin g Lo w V F • X -f A 5 —a —K : äi S u p e r h ig h speed s w itc h in g . C olor c o d e : S ilv e r us*« H ig h re lia b ility by p la n e r d e s ig n . ✓

SIR662

Contextual Info: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0027 at VGS = 10 V 60 0.0035 at VGS = 4.5 V 60 VDS (V) 60 Qg (Typ.) 30 nC PowerPAK SO-8 D S 6.15 mm S 2 S 3 G 4 G D 8 D 7 D 6 D 5 Bottom View

YG911S3

Contextual Info: YG911S3 5A • Outline Drawing l o w l o s s s u p e r h ig h s p e e d r e c t i f i e r ■ Features • Insulated package by fully overmolding • Lo w V f • Super high speed switching • High reliability by planer design ■ Applications • High speed power switching

F179

Abstract: SC-65 ap 4502
Contextual Info: 2 S K 1 5 1 2 MAE 1> • 52307=12 ÜDDlflES ISS C0LH1ER SEMICONDUCTOR INC Scope This sp e c ifie s Fuji power MOSFET Outline I Construction Q ) Application IS ) Outview “ Ia l*i£ > S 3 2 i«i "2O5 3 _j a 3 5 o 0: &Ô “« a? “ORu is e t oi¿ £s §s S

24A24

Contextual Info: VG/CA-B Alternate Insert Positions Special Insert A lte rna tions Sp ecia l insert a lternations are m a rke d b y p o s itio n . T h e p o sition n u m b e r Contact Arrangem ent Position of C on ta d Arrangem ent 1 2 S -1 1 2 S -2 12 S A 1 0 12 8 3 8 12

Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C1237D5PM Microcontroller identical to LM4F130C4QR D ATA SHE E T D S -T M 4C 1237 D5 P M - 1 4 9 9 5 . 2 6 6 7 S P M S 356A C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright

Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C1237H6PZ Microcontroller identical to LM4F132H5QC D ATA SHE E T D S -T M 4C 1237 H6 P Z - 1 4 9 9 5 . 2 6 6 7 S P M S 362A C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright

2SK2098-01M

Abstract: 2sk2098
Contextual Info: 2SK2098-01M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET _ _ _ - FAP-III SERIES • Features • • • • • • Outline Drawings High current Low on-resistance No secondary breakdown

Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C1237E6PM Microcontroller identical to LM4F130E5QR D ATA SH E E T D S -T M 4C 1237 E 6 P M - 1 4 9 9 5 . 2 6 6 7 S P M S 358A C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright

Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C1233H6PGE Microcontroller identical to LM4F122H5QD D ATA SHE E T D S -T M 4C 1233 H6 P G E - 1 4 9 9 5 . 2 6 6 7 S P M S 350A C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright

Contextual Info: 22307*12 0 0 D 4 1 S 5 7T4 S PE CI F I CAT ION DEVICE NAME 1G B T TYPE NAME : 1M B C 1 5 - 0 6 0 SPEC. No. : MS 5 F 3 5 2 0 DATE : Jun. -25-1996 Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE DRAWN ,Wl CHECKED fi*,

ESAC92-02B

Abstract: Collmer SC
Contextual Info: ESAC92-02B 16A • Outline Drawing l o w l o s s s u p e r h ig h s p e e d r e c t i f i e r ■ Connection Diagram ■ Features • Lo w V f • Super high speed switching r>H H«-n !> • High reliability by planer design ■ Applications i■ X • High speed power switching

Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C1233E6PZ Microcontroller identical to LM4F122E5QC D ATA SH E E T D S -T M 4C 1233 E 6 P Z - 1 4 6 0 2 . 2 6 4 8 S P M S 349 C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright

Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C1233D5PM Microcontroller identical to LM4F120C4QR D ATA SHE E T D S -T M 4C 1233 D5 P M - 1 4 9 9 5 . 2 6 6 7 S P M S 346A C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright