S 170 TRANSISTOR Search Results

Contextual Info: SIEMENS BS 170 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • V^GS th = 0.8.2.0V Pin 1 Pin 2 S Type VDS b BS 170 60 V 0.3 A Type BS 170 Ordering Code Q67000-S076 %S(on) 5Û Pin 3 G Package Marking TO-92 BS 170 D

bs 170

Abstract: BS 050 transistor Q67000-S076
Contextual Info: BS 170 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BS 170 60 V 0.3 A 5Ω TO-92 BS 170 Type BS 170 Ordering Code Q67000-S076 D Tape and Reel Information

Q67000-S076

Abstract: BS 050 transistor transistor BS 170
Contextual Info: BS 170 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BS 170 60 V 0.3 A 5Ω TO-92 BS 170 Type BS 170 Ordering Code Q67000-S076 D Tape and Reel Information

BSP 17 D

Contextual Info: BSP 170 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Avalanche rated • VGS th = -2.1.-4.0 V Pin 1 G Type VDS ID RDS(on) Package BSP 170 -60 V -1.7 A 0.35 Ω SOT-223 Type BSP 170 Ordering Code Q67000-S . . . Pin 2 D Pin 3 Pin 4

Q67041-S4018

Abstract: transistor SMD bsp 62
Contextual Info: BSP 170 P Preliminary data SIPMOS Power Transistor •P-Channel •Enhancement mode •Avalanche rated •dv/dt rated Type VDS ID RDS on BSP 170 P 60 V -1.9 A 0.3 Ω Pin 1 Pin 2/4 Pin 3 G D S Package @ VGS VGS = -10 V SOT-223 Ordering Code Q67041-S4018

Contextual Info: S G 5 Ï . S - 1 H M S 0 N iLKêTGMtgS SD1455 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS 170 - 230 MHz 25 VOLTS IMD - 55dB COMMON EMITTER GOLD METALLIZATION HIGH SATURATED POWER CAPABILITY DIFFUSED EMITTER BALLAST RESISTORS DESIGNED FOR HIGH POWER LINEAR

Contextual Info: S C S -T H O M S O N S D 1456 T C C 3100 5 7 . RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS 170 - 230 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST

JE170

Contextual Info: TRSISB? 005^075 7 • SGS-THOMSON s[UiOT !D gS r~ p 3 3 - Q ~ 7 MJ E170/171 /172 MJ E180/181 /182 S G S-THOMSON 3ÜE » COMPLEMENTARY POWER TRANSISTORS DESCRIPTIO N The MJE 170, MJE171, MJE172 (PNP types and MJE180, MJE181, MJE182 (NPN types) are silicon

Contextual Info: S G S - IH O M S O N 5 7 . IU SD1458 RF & MICROWAVE TRANSISTORS TV\LINEAR APPLICATIONS 170 - 230 MHz 28 VOLTS IMD -55 dB COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING HIGH SATURATED POWER CAPABILITY DESIGNED FOR HIGH POWER LINEAR OPERATION P o u t = 14 W MIN. WITH 14.0 dB GAIN

Contextual Info: M i- 2N2222A GENERAL PURPOSE NPN TRANSISTOR 61096 OPTOELECTRONIC PRODUCTS DIVISION Features • • • • 0 210 5 33 , 0 170(4 32) [' TO -18 style package Rugged package - able to withstand high acceleration load Hermetically sealed MIL-S-19500 screening available

Contextual Info: NSL12AW High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com Features: • • • • High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A) Small Size

transistor c830

Contextual Info: P ow er _ l - 3 3 - O f i 2 N 170 0 HARR IS S E M I C O N D S E CT OR File Number 141 B7E D • M 3 0 2 2 7 1 G G l ^ f l Q ^ ■ HAS Silicon N-P-N Power-Switching Transistor TERMINAL DESIGNATIONS

BD 468 S

Abstract: bj 170 BD170
Contextual Info: PNP SILICON TRANSISTORS, EP ITAXIAL BASE BG166 T R A N S IS TO R S PNP S IL IC IU M , B A S E E P IT A X IE E g Q - |g g BD 170 Compl.of BD 165, BD 167, BD 169 PR E LIM IN A R Y DATA N O T IC E P R E L IM IN A IR E These transistors are intended for complemen­

NSL12AW

Abstract: NSL12AWT1 NSL12AWT1G
Contextual Info: NSL12AW High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com Features • • • • • 12 VOLTS 3.0 AMPS PNP TRANSISTOR High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A)

VN1706m

Abstract: VN1706L
Contextual Info: SILICONIX INC 1ÖE D • ÖSS473S Q014CH4 1 ■ VN1706L, VN1706M f X S ilic o n ix J J f incorporated N-Channel Enhancem ent-M ode M OS Transistors T-2-7-Z5' PRODUCT SUMMARY TO-92 PART NUMBER V BR DSS fDS(ON) (V) ( Í1 ) >d (A) PACKAGE VN1706L 170 6 0.22 TO-92

rc4191

Abstract: Indiana general ferrite core ferroxcube Ee core
Contextual Info: Raytheon Electronics S e m ic o n d u c to r D iv is io n RC4391 Inverting and Step-Down Switching Regulator Features • Versatile — Inverting function + to - Step-down function Adjustable output voltage Regulates supply changes • M icropower — Low quiescent current — 170 |lA

e1309

Abstract: Dale Resistor 7501 74HC ADV471 ADV478 RS-170 RS-343A 10XXH BIT 3195 G TY1010
Contextual Info: AN ALO G D E V IC E S CM0S80MHz Monolithic 256x24 18 Color Palette RAM-DACs ADV478/AD V471 FEATURES Personal System/2* Compatible 80MHz Pipelined Operation Triple 8-Bit (6-Bit) D/A Converters 256x24(18) Color Palette RAM 15x24(18) Overlay Registers RS-343A/RS-170 Compatible Outputs

ZN423T

Abstract: ZN424E tr3 5m V2N3055
Contextual Info: r IS ZE TE X INC D 1170570 OOOt.170 Q 95D 06178 D "7^ S 3 - 0 7 Precision voltage reference source FEATURES DESCRIPTION • The Z N 4 2 3 is a monolithic integrated circuit utilising the energy bandgap voltage of a baseemitter junction to produce a precise, stable,

BD329/BD330

Abstract: BD329 BD330
Contextual Info: BD329 PHILIPS INTERNATIONAL 5fc>E D TllDôHb 004EÛ7G =170 • P H I N ■ T " 3 3 -0 7 SILICON PLANAR EPITAXIAL POWER TRANSISTOR N -P -N tr a n s is to r in a SOT-32 p la stic envelope intended fo r c a r - r a d io output sta g e s. P -N -P com plem ent is BD330. M atched p a irs can be supplied.

SC11402CN

Abstract: SC1140 lm1850 SC11402C B 1403 N transistor 1403
Contextual Info: SC11401/SC11402/SC11403/SC11404 8-Bit Video DACs V SIERRA SEMICONDUCTOR □ TTL or CM O S com patible □ RS-170 and RS-343A com patible □ Low pow er 100 mW □ Up to 75 M H z update rate □ Single 5 V operation □ Internal reference GENERAL DESCRIPTION

RCA 40411 transistor

Abstract: rca 40411 audio amplifier with rca 40411 RCA 528 transistor 40411 40411 transistor 40411 RCA 40250 transistor BDY29 RCA 2N6254
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . V cE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.

RCA 40636 transistor

Abstract: rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327
Contextual Info: Ic to 80 A . . . P t to 300 W . . . V cE to 170 V H O M ETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.

RCA 40313

Abstract: 2n1482 RCA 40250 2N3054 2N344 2N5298 2N5786 2N6478 ITO-220
Contextual Info: Ic to 80 A . Pt to 300 W . V c E to 170 V H O M E T A X IA L -B A S E N-P-N POW ER T Y P E S le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.

3N170/D

Abstract: 3N170 3N171
Contextual Info: 3N 170, 3N171 N -C h a n n e l E n h a n ce m e n t M ode M O S FIET FEATURES PIN CONFIGURATION • Low Sw itching V olta g e s— VQS ttll} s 3.0 V • Fast Sw itching Tim es — tr s 10 ns TO -72 • Low Drain-Source Resistance rd8,on » 2000 (Max) M A X I M U M R A T I N G S (T a = 2 5 °C unless otherw ise noted)