S 170 TRANSISTOR Search Results

Contextual Info: SIEMENS BS 170 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • V^GS th = 0.8.2.0V Pin 1 Pin 2 S Type VDS b BS 170 60 V 0.3 A Type BS 170 Ordering Code Q67000-S076 %S(on) 5Û Pin 3 G Package Marking TO-92 BS 170 D

bs 170

Abstract: BS 050 transistor Q67000-S076
Contextual Info: BS 170 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BS 170 60 V 0.3 A 5Ω TO-92 BS 170 Type BS 170 Ordering Code Q67000-S076 D Tape and Reel Information

Q67000-S076

Abstract: BS 050 transistor transistor BS 170
Contextual Info: BS 170 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BS 170 60 V 0.3 A 5Ω TO-92 BS 170 Type BS 170 Ordering Code Q67000-S076 D Tape and Reel Information

BSP 17 D

Contextual Info: BSP 170 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Avalanche rated • VGS th = -2.1.-4.0 V Pin 1 G Type VDS ID RDS(on) Package BSP 170 -60 V -1.7 A 0.35 Ω SOT-223 Type BSP 170 Ordering Code Q67000-S . . . Pin 2 D Pin 3 Pin 4

Contextual Info: S G 5 Ï . S - 1 H M S 0 N iLKêTGMtgS SD1455 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS 170 - 230 MHz 25 VOLTS IMD - 55dB COMMON EMITTER GOLD METALLIZATION HIGH SATURATED POWER CAPABILITY DIFFUSED EMITTER BALLAST RESISTORS DESIGNED FOR HIGH POWER LINEAR

JE170

Contextual Info: TRSISB? 005^075 7 • SGS-THOMSON s[UiOT !D gS r~ p 3 3 - Q ~ 7 MJ E170/171 /172 MJ E180/181 /182 S G S-THOMSON 3ÜE » COMPLEMENTARY POWER TRANSISTORS DESCRIPTIO N The MJE 170, MJE171, MJE172 (PNP types and MJE180, MJE181, MJE182 (NPN types) are silicon

Contextual Info: S G S - IH O M S O N 5 7 . IU SD1458 RF & MICROWAVE TRANSISTORS TV\LINEAR APPLICATIONS 170 - 230 MHz 28 VOLTS IMD -55 dB COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING HIGH SATURATED POWER CAPABILITY DESIGNED FOR HIGH POWER LINEAR OPERATION P o u t = 14 W MIN. WITH 14.0 dB GAIN

Contextual Info: M i- 2N2222A GENERAL PURPOSE NPN TRANSISTOR 61096 OPTOELECTRONIC PRODUCTS DIVISION Features • • • • 0 210 5 33 , 0 170(4 32) [' TO -18 style package Rugged package - able to withstand high acceleration load Hermetically sealed MIL-S-19500 screening available

VN1706m

Abstract: VN1706L
Contextual Info: SILICONIX INC 1ÖE D • ÖSS473S Q014CH4 1 ■ VN1706L, VN1706M f X S ilic o n ix J J f incorporated N-Channel Enhancem ent-M ode M OS Transistors T-2-7-Z5' PRODUCT SUMMARY TO-92 PART NUMBER V BR DSS fDS(ON) (V) ( Í1 ) >d (A) PACKAGE VN1706L 170 6 0.22 TO-92

e1309

Abstract: Dale Resistor 7501 74HC ADV471 ADV478 RS-170 RS-343A 10XXH BIT 3195 G TY1010
Contextual Info: AN ALO G D E V IC E S CM0S80MHz Monolithic 256x24 18 Color Palette RAM-DACs ADV478/AD V471 FEATURES Personal System/2* Compatible 80MHz Pipelined Operation Triple 8-Bit (6-Bit) D/A Converters 256x24(18) Color Palette RAM 15x24(18) Overlay Registers RS-343A/RS-170 Compatible Outputs

SC11402CN

Abstract: SC1140 lm1850 SC11402C B 1403 N transistor 1403
Contextual Info: SC11401/SC11402/SC11403/SC11404 8-Bit Video DACs V SIERRA SEMICONDUCTOR □ TTL or CM O S com patible □ RS-170 and RS-343A com patible □ Low pow er 100 mW □ Up to 75 M H z update rate □ Single 5 V operation □ Internal reference GENERAL DESCRIPTION

RCA 40313

Abstract: 2n1482 RCA 40250 2N3054 2N344 2N5298 2N5786 2N6478 ITO-220
Contextual Info: Ic to 80 A . Pt to 300 W . V c E to 170 V H O M E T A X IA L -B A S E N-P-N POW ER T Y P E S le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.

3N170/D

Abstract: 3N170 3N171
Contextual Info: 3N 170, 3N171 N -C h a n n e l E n h a n ce m e n t M ode M O S FIET FEATURES PIN CONFIGURATION • Low Sw itching V olta g e s— VQS ttll} s 3.0 V • Fast Sw itching Tim es — tr s 10 ns TO -72 • Low Drain-Source Resistance rd8,on » 2000 (Max) M A X I M U M R A T I N G S (T a = 2 5 °C unless otherw ise noted)

BDX33C darlington pair

Abstract: 40349 transistor BDY29 2N3773 transistor 2N3055 RCA 528 2n3771 2N3772 RCA RCA transistor 2n3055 RCA 40250
Contextual Info: Ic to 80 A . . . P t to 300 W . . . V c E to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES <e “ 1.6 A max. P T " 8.76 W max. ITO-39J* le a 1 .S A max. PT - 8.7S W m u . TO-391* A i t . AAi 9U X 9U lc » 3.S A max. P y « 10 W max. (TO-391* lc * 4 A max. Pt - GO W max.

Transistor 2n6099

Abstract: BD278 2N3055 2N6478 power amplifier circuit 300W TRANSISTOR AUDIO AMPLIFIER 40636 class ab audio amplifier circuit transistor 2N1482 2N5415 2N344
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . V cE to 170 V H O M ETA XIA L-B A SE N-P-N POWER TYPES <e “ 1.6 A max. P T " 8.76 W max. ITO-39J* A it . AAi 9U X 9U le a 1 .S A max. lc » 3.S A max. Py « 10 W max. TO-391* PT - 8.7S W m u . (TO-391* 90 x 90 90 x lc * 4 A max.

RCA 40410

Abstract: rca 40362 40410 RCA transistor 40406 RCA transistor 40319 transistor 40410 TRANSISTOR 40391 RCA transistor 40410 2N5296 RCA 2N6474
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 1 6 A m a x . • 26 0 W m ax. <e “ 1 .6 A m a x. le a 1 . S A m ax . l c » 3.S A m ax . lc * 4 A m a x . lc a 4 A m ax. le • 3 A m ax. le “ 3 A m ax. le - 7 A m ax.

RCA 40313

Abstract: RCA 528 2n3773 rca 40349 RCA 40349 2N3441 RCA 2N3442 40328 BUX 115 RCA 40250
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 1 6 A m a x . • 26 0 W m ax. lc • 8 0 A m a x . P t - 3 0 0 W m ax. <e “ 1 .6 A m a x. le a 1 . S A m ax . l c » 3.S A m ax . lc * 4 A m a x . lc a 4 A m ax. le • 3 A m ax.

BSP 76

Contextual Info: BSP 170 P SIEMENS Preliminary data SIPMOS Power Transistor • P-Channel • Enhancement mode • Avalanche rated • dv/df rated Type BSP 170 P VDS 60 V b -1.9A ^DSioni 0.3 0 Package fS> VGS UGS = -1 0 V SOT-223 Ordering Code Q67041-S4018 Maximum Ratings , at Tj = 25°C, unless otherwise specified

rjr ce

Abstract: BD170 Scans-0010668 BD 166, 168, 170 bd166 JEDECTO126 BD169 BD - 100 V
Contextual Info: BD166 • BD168 • BD170 Silicon PNP Epitaxial Planar Power Transistors Anwendungen: Allgemein im NF-Bereich Applications: General in AF-range Besondere Merkmale: • Verlustleistung 20 W Features: • Power dissipation 20 W

e1220

Abstract: 2SK2437
Contextual Info: SAfiYO New Products Of New Package 5/6-pi n XP Seri es :FX type 1 The Sanyo new package 5/6-pin XPs are intermediate sized devices between Sanyo PCP and TP packages and have high power capability. This package line includes large current switching transistor series, power MOS FET series, and other device series.

MHT1909

Abstract: MHT1910 MHT2002 MHT2003 MHT2004 MHT2008 MHT1803 germanium transistors NPN 2SA451 MP503
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

j521

Contextual Info: 3135GN-170M Rev 2 3135GN – 170M 170 Watts - 60 Volts, 300 s, 10% 3100 - 3500 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 3135GN-170M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 11dB gain, 170 Watts of pulsed RF

Contextual Info: 2N6659 2N6660 _ / V _ 2N6661 N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical O-MOS transistor in a TO-39 envelope and designed for application as low-power, high-frequency inverters and line drivers.

2N6661

Abstract: 2N6660 2N6661 transistor 2N6659 max 1988
Contextual Info: MIE D m 2N6659 2N6660 2N6661 711Gfl2b □Q2t.7c 3 1 • P H I N PHILIPS INTERNATIONAL T-31'0& N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-39 envelope and designed for application as low-power, high-frequency inverters and. line drivers.