RWD QT Search Results

EM4001

Abstract: RFID protocol communication em4001 H400X HITAG 2 protocol em 18 reader module EM4001 RFID tag em 18 rfid reader module HITAG micro PROTOCOL HITAG 2 HITAG command
Contextual Info: ib technology Data Sheet RWD_QT.pdf 8 Pages Last Revised 08/05/06 Micro RWD Quad-Tag Reader The MicroRWD “QT” Quad-Tag version is a complete 125kHz reader solution for Hitag 1 (including Hitag S in Plain Memory mode), Hitag 2 (Password mode), EM400X/4102 and

mifare s50 MIFARE command

Abstract: MIFARE DESFire error codes DESFire Create File Command MIFARE Ultralight authentication MF IC S50 Mifare DESFire Create Application Command Mifare Desfire protocol mifare 1k s50 8051 mx philips HITAG 2 protocol
Contextual Info: ib technology Data Sheet MFprot.pdf 27 Pages Last Revised 05/06/06 Micro RWD MF Mifare Reader The MicroRWD MF module is a complete reader and transponder acceptance solution for 13.56 MHz Mifare (1k and 4k byte versions) and Mifare Ultralight cards. In addition the

Wiegand rfid

Abstract: Micro RWD MF Mifare 26 bit wiegand output module wiegand output wiegand output of RFID reader wiegand 26 Wiegand rfid code MIFARE DESFire Commands mifare s50 MIFARE command wiegand code
Contextual Info: ib technology Data Sheet MFPROT_LP.pdf 35 Pages Last Revised 18/02/08 Micro RWD MF Mifare Low Power Version (with auxiliary data outputs) The MicroRWD MF LP (Low Power) module is a complete read and write solution for 13.56 MHz Mifare (1k, 4k and Ultralight versions) and supports “Mifare” contactless operations to

MFprot_LP

Abstract: rwd modules Wiegand rfid HITAG 2 coding algorithm MiFare Ultralight 64 byte HITAG micro PROTOCOL
Contextual Info: ib technology Data Sheet MFPROT_LP.pdf 35 Pages Last Revised 09/08/11 Micro RWD MF Mifare Low Power Version (with auxiliary data outputs) The MicroRWD MF LP (Low Power) module is a complete read and write solution for 13.56 MHz Mifare Classic cards (1k, 4k and Ultralight versions) and supports “Mifare” contactless

Contextual Info: PRELIMINARY MICZRON I 16 MEG X 4 FPM DRAM H R AM LSHMIVI MT4LC16M4A7 MT4LC16M4T8 FEATURES PIN ASSIGNMENT Top View • Single +3.3V ±0.3V power supply • Industry-standard x4 pinout, timing, functions and packages • 13 row, 11 column addresses (A7) 12 row, 12 column addresses (T8)

Contextual Info: L99H01 Motor bridge driver for automotive applications Datasheet − production data Features • Operating supply voltage 6 V to 28 V ■ Central 2 stage charge pump ■ 100% duty cycle ■ Full RDSon down to 6 V normal level MOSFETs ■ Control of reverse battery protection MOSFET

L99H01

Abstract: PowerSSO-36 LQFP32 LQFP-32 L99H01XPTR lqfp-32 package lqfp-32 footprint layout
Contextual Info: L99H01 Motor bridge driver for automotive applications Features • Operating supply voltage 6 V to 28 V ■ Central 2 stage charge pump ■ 100% duty cycle ■ Full RDSon down to 6 V normal level MOSFETs ■ Control of reverse battery protection MOSFET

Contextual Info: L99H01 Motor bridge driver for automotive applications Datasheet - production data Applications • Wiper • Power door • Seat belt tensioner • Seat positioning LQFP32 7x7mm PowerSSO-36 • Valve tronic • Park break • 2H motors Features Description

Contextual Info: L99H01 Motor bridge driver for automotive applications Datasheet - production data Applications • Wiper • Power door • Seat belt tensioner • Seat positioning LQFP32 7x7mm PowerSSO-36 • Valve tronic • Park break • 2H motors Features Description

L99H01

Contextual Info: L99H01 Motor bridge driver for automotive applications Datasheet − production data Features • Operating supply voltage 6 V to 28 V ■ Central 2 stage charge pump ■ 100% duty cycle ■ Full RDSon down to 6 V normal level MOSFETs ■ Control of reverse battery protection MOSFET

Contextual Info: 1, 2, 4 MEG X 64 NONBUFFERED DRAM DIMMs M IC R O N DRAM MODULE MT4LD(T 164A(X) MT8LD264A(X) MT16LD464A(X) FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • JEDEC pin-out in a 168-pin, dual in-line memory module (DIMM) • 8MB (1 Meg x 64), 16MB (2 Meg x 64),

Nippon capacitors

Contextual Info: HB56U272E Series 2,097,152-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-713A Z Rev. 1.0 Jan. 27, 1997 Description The HB56U272E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The HB56U272E is a 2M

Contextual Info: MICRON SE M I C ON DU C TO R INC b3E D • blllSHR DDGfibD? 7 3 e! * M R N MICRQN I M T 4 C 8 5 1 2 /3 5 1 2 K X 8 W ID E D R A M SEBICO M O UCTO Rinc WIDE DRAM 512K X 8 DRAM FAST-PAGE-MODE FEATURES PIN ASSIGNMENT Top View • Industry-standard x8 pinouts, timing, functions and

M5117405

Abstract: msm5117405a Q020G m51174
Contextual Info: O K I Semiconductor_ MSM5 1 174 05 A_ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION T he M SM 5117405A is a4,194,304-word x 4-bit d yn am ic R A M fab ricated in O K I’s C M O S silico n gate technology. The M SM 5117405A ach ieves h ig h in teg ratio n , high-speed operatio n, and low -pow er

V53C16258H

Abstract: 3bld
Contextual Info: MOSEL VITELIC V53C16258H 256KX 16 PAGE MODE CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT HIGH PERFORMANCE PRELIMINARY 40 45 50 60 Max. R A S Access Time, tf^c 40 ns 45 ns 50 ns 60 ns Max. Column Address Access Time, (tCAA) 20 ns 22 ns 24 ns 30 ns Min. Extended Data Out Page Mode Cycle Time, (tPC)

RAS 0510

Contextual Info: Order this document by MCM516400C/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4M Advance Information 16M CMOS Dynamic RAM Family Fast Page Mode, x4, 2K and 4K Refresh The family of 16M dynamic RAMs is fabricated using 0.5ji CMOS high-speed silicon-gate process technology. It Includes devices organized as 4,194,304 four-bit

Contextual Info: HICR0N TECHNOLOGY INC bOE D • b l l l S H 1! GGObbOl 43b ■ urn PRELIMINARY 256K x 16 DRAM WIDE DRAM FAST-PAGE-MODE SELF REFRESH FEATURES PIN ASSIGNMENT Top View • SELF REFRESH, or "Sleep M ode" • Industry-standard x l6 p inouts, tim ing, functions

ZIP20-P-400

Abstract: OKI CMOS ina26
Contextual Info: O K I Semiconductor MSM5141 OOC/CL_ 4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514100C/CL is a 4,194,304-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514100C/CL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM514100C/CL is

Contextual Info: MITSUBISHI LSIs M5M411664J,TP,RT-6,-8,-6S,-8S FAST PAGE MODE 1 0 4 8 5 7 6 -B IT 6 5 5 3 6 -W 0 R D BY 16-B IT D Y N A M IC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) T h is is a fa m ily o f 6 5 5 3 6 - w o r d b y 1 6 - b i t d y n a m ic R A M s , fa b ric a te d w ith th e h ig h p e rfo rm a n c e C M O S p ro c e s s , an d

Contextual Info: .¡AN a a ¡991 MICRON I M T42C8127 KCMHOIOCT ML 128K x 8 DRAM with 256 x 8 SAM VRAM FEATURES • • • • • • • • • • • Industry standard pin out, timing and functions High performance CMOS silicon gate process Single+5V ±10% power supply

OPA333 thermocouple

Abstract: PT100 REF200 SBOS445B pt100 spice model BF256A circuit
Contextual Info: INA333 www.ti.com . SBOS445B – JULY 2008 – REVISED OCTOBER 2008 Micro-Power 50µA , Zerø-Drift, Rail-to-Rail Out

Contextual Info: INA333 www.ti.com . SBOS445B – JULY 2008 – REVISED OCTOBER 2008 Micro-Power 50µA , Zerø-Drift, Rail-to-Rail Out

OPA3331

Abstract: RTD CIRCUITS analog instruments mobile ECG Machine msp430 pt100 pt100 msp430 marking i333
Contextual Info: INA333 www.ti.com . SBOS445B – JULY 2008 – REVISED OCTOBER 2008 Micro-Power 50µA , Zerø-Drift, Rail-to-Rail Out

MSM OKI

Contextual Info: O K I Semiconductor M S M 5 1 1 6 6 4 A / A L _ 65,536-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE BYTE WRITE DESCRIPTION The M SM 511664A/AL is a n ew generation dynam ic RAM organized as 65,536-word x 16-bit. The technology used to fabricate the M SM 511664A/AL is OKI's CMOS silicon gate process technology.