RU1HP60R
Abstract: ruichips
Contextual Info: RU1HP60R P-Channel Advanced Power MOSFET Features Pin Description • -100V/-60A, RDS ON =18mΩ(Typ.)@VGS=-10V • Low On-Resistance • Super High Dense Cell Design • Fast Switching and Fully Avalanche Rated • 100% avalanche tested • 175°C Operating Temperature
|
Original
|
RU1HP60R
-100V/-60A,
RU1HP60R
ruichips
|
PDF
|
RU40L10H
Contextual Info: RU40L10H P-Channel Advanced Power MOSFET MOSFET Features Pin Description • -40V/-9.5A, RDS ON =19mΩ (Typ.) @ VGS=-10V RDS (ON) =30mΩ (Typ.) @ VGS=-4.5V • Super High Dense Cell Design • Reliable and Rugged • ESD Protected SOP-8 • Lead Free and Green Available
|
Original
|
RU40L10H
-40V/-9
RU40L10H
|
PDF
|
RU55L18L
Abstract: ruichips
Contextual Info: RU55L18L P-Channel Advanced Power MOSFET MOSFET Features Pin Description • -60V/-16A, RDS ON =100mΩ(Typ.)@VGS=-10V RDS (ON) =125mΩ(Typ.)@VGS=-4.5V • Super High Dense Cell Design • ESD protected • Reliable and Rugged TO252 • 100% avalanche tested
|
Original
|
RU55L18L
-60V/-16A,
RU55L18L
ruichips
|
PDF
|
RU1HL13K
Abstract: ruichips
Contextual Info: RU1HL13K P-Channel Advanced Power MOSFET MOSFET Features Pin Description • -100V/-13A, RDS ON =160mΩ(Typ.)@VGS=-10V RDS (ON) =180mΩ(Typ.)@VGS=-4.5V • Super High Dense Cell Design • ESD protected • Reliable and Rugged TO251 • 100% avalanche tested
|
Original
|
RU1HL13K
-100V/-13A,
RU1HL13K
ruichips
|
PDF
|
RU1HP55R
Abstract: ruichips
Contextual Info: RU1HP55R P-Channel Advanced Power MOSFET Features Pin Description • -100V/-55A, RDS ON =40mΩ(Typ.)@VGS=-10V • Low On-Resistance • Super High Dense Cell Design • Fast Switching and Fully Avalanche Rated • 100% avalanche tested • 175°C Operating Temperature
|
Original
|
RU1HP55R
-100V/-55A,
RU1HP55R
ruichips
|
PDF
|
RU1HL8L
Abstract: ruichips RUICHI
Contextual Info: RU1HL8L P-Channel Advanced Power MOSFET Features Pin Description • -100V/-8A, RDS ON =350mΩ(Typ.)@VGS=-10V RDS (ON) =400mΩ(Typ.)@VGS=-4.5V • Super High Dense Cell Design • ESD protected • Reliable and Rugged TO252 • 100% avalanche tested • Lead Free and Green Devices Available
|
Original
|
-100V/-8A,
RU1HL8L
ruichips
RUICHI
|
PDF
|
RU55L18R
Abstract: ruichips
Contextual Info: RU55L18R P-Channel Advanced Power MOSFET MOSFET Features Pin Description • -60V/-16A, RDS ON =100mΩ(Typ.)@VGS=-10V RDS (ON) =125mΩ(Typ.)@VGS=-4.5V • Super High Dense Cell Design • ESD protected • Reliable and Rugged TO-220 • 100% avalanche tested
|
Original
|
RU55L18R
-60V/-16A,
O-220
RU55L18R
ruichips
|
PDF
|
RU40P3C
Contextual Info: RU40P3C P-Channel Advanced Power MOSFET Features Pin Description • -40V/-3A, RDS ON =100mΩ(Typ.)@VGS=-10V RDS (ON) =150mΩ(Typ.)@VGS=-4.5V D • Low On-Resistance • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant)
|
Original
|
RU40P3C
-40V/-3A,
OT23-3
RU40P3C
|
PDF
|
RU60P60R
Abstract: ruichips
Contextual Info: RU60P60R P-Channel Advanced Power MOSFET Features Pin Description • -60V/-60A, RDS ON =22mΩ(Typ.)@VGS=-10V • Low On-Resistance • Super High Dense Cell Design • Fast Switching and Fully Avalanche Rated • 100% avalanche tested • 175°C Operating Temperature
|
Original
|
RU60P60R
-60V/-60A,
RU60P60R
ruichips
|
PDF
|