RU1HP60R
Abstract: ruichips
Contextual Info: RU1HP60R P-Channel Advanced Power MOSFET Features Pin Description • -100V/-60A, RDS ON =18mΩ(Typ.)@VGS=-10V • Low On-Resistance • Super High Dense Cell Design • Fast Switching and Fully Avalanche Rated • 100% avalanche tested • 175°C Operating Temperature
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RU40L10H
Contextual Info: RU40L10H P-Channel Advanced Power MOSFET MOSFET Features Pin Description • -40V/-9.5A, RDS ON =19mΩ (Typ.) @ VGS=-10V RDS (ON) =30mΩ (Typ.) @ VGS=-4.5V • Super High Dense Cell Design • Reliable and Rugged • ESD Protected SOP-8 • Lead Free and Green Available
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RU55L18L
Abstract: ruichips
Contextual Info: RU55L18L P-Channel Advanced Power MOSFET MOSFET Features Pin Description • -60V/-16A, RDS ON =100mΩ(Typ.)@VGS=-10V RDS (ON) =125mΩ(Typ.)@VGS=-4.5V • Super High Dense Cell Design • ESD protected • Reliable and Rugged TO252 • 100% avalanche tested
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RU1HL13K
Abstract: ruichips
Contextual Info: RU1HL13K P-Channel Advanced Power MOSFET MOSFET Features Pin Description • -100V/-13A, RDS ON =160mΩ(Typ.)@VGS=-10V RDS (ON) =180mΩ(Typ.)@VGS=-4.5V • Super High Dense Cell Design • ESD protected • Reliable and Rugged TO251 • 100% avalanche tested
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RU1HP55R
Abstract: ruichips
Contextual Info: RU1HP55R P-Channel Advanced Power MOSFET Features Pin Description • -100V/-55A, RDS ON =40mΩ(Typ.)@VGS=-10V • Low On-Resistance • Super High Dense Cell Design • Fast Switching and Fully Avalanche Rated • 100% avalanche tested • 175°C Operating Temperature
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RU1HL8L
Abstract: ruichips RUICHI
Contextual Info: RU1HL8L P-Channel Advanced Power MOSFET Features Pin Description • -100V/-8A, RDS ON =350mΩ(Typ.)@VGS=-10V RDS (ON) =400mΩ(Typ.)@VGS=-4.5V • Super High Dense Cell Design • ESD protected • Reliable and Rugged TO252 • 100% avalanche tested • Lead Free and Green Devices Available
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RU55L18R
Abstract: ruichips
Contextual Info: RU55L18R P-Channel Advanced Power MOSFET MOSFET Features Pin Description • -60V/-16A, RDS ON =100mΩ(Typ.)@VGS=-10V RDS (ON) =125mΩ(Typ.)@VGS=-4.5V • Super High Dense Cell Design • ESD protected • Reliable and Rugged TO-220 • 100% avalanche tested
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RU40P3C
Contextual Info: RU40P3C P-Channel Advanced Power MOSFET Features Pin Description • -40V/-3A, RDS ON =100mΩ(Typ.)@VGS=-10V RDS (ON) =150mΩ(Typ.)@VGS=-4.5V D • Low On-Resistance • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant)
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RU60P60R
Abstract: ruichips
Contextual Info: RU60P60R P-Channel Advanced Power MOSFET Features Pin Description • -60V/-60A, RDS ON =22mΩ(Typ.)@VGS=-10V • Low On-Resistance • Super High Dense Cell Design • Fast Switching and Fully Avalanche Rated • 100% avalanche tested • 175°C Operating Temperature
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