RT 2070 Search Results

LED infrared

Abstract: ir transmitter receiver sensors 12-240VAC RLK28-55/31/116 RL28-8-H-2000-IR/49/105 20mm-2m or31 ICS5-2000
Contextual Info: Photoelectric Sensors Photoelectric Series 28 Universal Style Diffused Mode with Background Suppression Specifications SENSING RANGE SENSITIVITY ADJUSTMENT 20-400mm 20-400mm 20-400mm 20-400mm Yes Yes Yes Yes RL28-8-H-400-RT/49/115 RL28-8-H-400-RT/49/105 RL28-8-H-400-RT/105/110 RLK28-8-H-400-RT-Z/31/116

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

300A thyristor gate control circuit

Contextual Info: Technische Information / technical information Netz-Thyristor Phase Control Thyristor T2161N Key Parameters enndaten VDRM / VRRM 4800V … 5200V ITAVM 2070A TC=85°C ITSM vT0 55000A 3570A (TC=55°C) 0,81V rT 0,347mΩ RthJC 7,0K/kW Clamping Force 45 … 65kN

GE 2L

Abstract: sk 3050 c SK 3050 J
Contextual Info: * SYNERGY 5V /3.3V 1 :9 D IF F E R E N T IA L Clockworks c l o c k d r i v e r w / o e n a b l e s y io o e ! !!^ S E M IC O N D U C T O R FEATURES DESCRIPTION • 3.3 V a n d 5 V p o w e r s u p p ly o p tio n s ■ 2 0 0 p s p a rt-to -p a rt sk ew

2056-0000

Abstract: 2082-5810-02 2098-3252-01 995022 2098-3251-94
Contextual Info: Index of P a rt Numbers Part Number Assembly Proced. Page 1001-5004-02 10-002 . 75 1001-5045-92 10-052 1 1001-6113-00 359 1001-6115-00 359 1001-7985-00 10-001 . 89 10017985-02 10-001 . 75

2098-3251-94

Contextual Info: Index of P a rt Numbers Part Number Assembly Proced. Page Part Number 1001-5004-02 10-002 . 75 1001-5045-92 10-052 1 1001-6113-00 359 1001-6115-00 359 1001-7985-00 10-001 . 89 1001- 7985-02

SY100E111U

Abstract: sk a 3050 c ay 950
Contextual Info: 5V/3.3V 1:9 D I F F E R E N T I A L Ï.Y10E1 SYNERGY C L O C K D R I V ER w/ o E N A B L E S E M IC O N D U C T O R 11A/ L • ; y i o o E i 11 a /l D E S C R IP T IO N FEATURES ■ 3 .3 V an d 5V p o w e r s u p p ly o p tio n s ■ 2 0 0 p s p a rt-to -p a rt sk ew

c 30275

Abstract: 03A1600 5STP 03A1200
Contextual Info: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 1800 V 325 A 510 A 5000 A 0.89 V 0.850 mΩ Ω Phase Control Thyristor 5STP 03A1800 Doc. No. 5SYA1032-01 Sep. 01 • Designed for traction, energy and industrial applications • Optimum power handling capability Blocking

ABB 5STP 16F2600

Abstract: 5STP 16F2600 16F2200 5STP 16F2800 16F2800 ABB 5STP 12 5STP16F2200
Contextual Info: Key Parameters VDSM = 2800 ITAVM = 1580 ITRMS = 2480 ITSM = 18000 VT0 = 0.82 rT = 0.370 V A A A V mΩ Phase Control Thyristor 5STP 16F2800 Doc. No. 5SYA 1022-02 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

21F1400

Abstract: 5STP21F1200 abb 26000
Contextual Info: Key Parameters VDSM = 1400 ITAVM = 2250 ITRMS = 3530 ITSM = 25000 VT0 = 0.75 rT = 0.157 V A A A V mΩ Phase Control Thyristor 5STP 21F1400 Doc. No. 5SYA 1023-03 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

5STP 07D1200

Abstract: 5STP 07D1600 5STP07D1600 07d18
Contextual Info: Key Parameters VDSM = 1800 ITAVM = 700 ITRMS = 1090 ITSM = 9000 VT0 = 0.80 rT = 0.540 V A A A V mΩ Phase Control Thyristor 5STP 07D1800 Doc. No. 5SYA 1027-03 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

08G6500

Abstract: 5STP 08G6500
Contextual Info: Key Parameters VDSM = 6500 ITAVM = 815 ITRMS = 1270 ITSM = 11600 VT0 = 1.22 rT = 0.970 V A A A V mΩ Phase Control Thyristor 5STP 08G6500 Doc. No. 5SYA 1006-02 May, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

Contextual Info: Key Parameters VSM = 5200 ITAVM = 2500 ITRMS = 3920 ITSM = 42000 VT0 = 1.00 rT = 0.225 Bi-Directional Control Thyristor V A A A V mΩ 5STB 25U5200 Tentative Doc. No. 5SYA 1038-01 July 98 Features •Two thyristors integrated into one wafer •Patented free-floating silicon technology

5STP06D2600

Contextual Info: Key Parameters VDSM = 2800 ITAVM = 590 ITRMS = 920 ITSM = 8000 VT0 = 0.92 rT = 0.780 V A A A V mΩ Phase Control Thyristor 5STP 06D2800 Doc. No. 5SYA 1020-02 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

5STP24H2800

Abstract: ABB 5STP abb S 24H220 24H2600 24H2800
Contextual Info: Key Parameters VDSM = 2800 ITAVM = 2625 ITRMS = 4120 ITSM = 43000 VT0 = 0.85 rT = 0.160 V A A A V mΩ Phase Control Thyristor 5STP 24H2800 Doc. No. 5SYA 1047-01 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

ABB 5STP 12

Abstract: 5STP03A1600
Contextual Info: Key Parameters VDSM = 1800 ITAVM = 325 ITRMS = 510 ITSM = 5000 VT0 = 0.89 rT = 0.850 V A A A V mΩ Phase Control Thyristor 5STP 03A1800 Doc. No. 5SYA 1032-01 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

5STP04D5200

Abstract: 04D5200
Contextual Info: Key Parameters VDSM = 5200 ITAVM = 400 ITRMS = 628 ITSM = 5000 VT0 = 1.20 rT = 1.600 V A A A V mΩ Phase Control Thyristor 5STP 04D5200 Doc. No. 5SYA 1026-02 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

Contextual Info: Key Parameters VDSM = 6500 ITAVM = 350 ITRMS = 550 ITSM = 4500 VT0 = 1.20 rT = 2.300 V A A A V mΩ Phase Control Thyristor 5STP 03X6500 Doc. No. 5SYA 1003-02 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

thyristor ABB 5stp 18f1600

Contextual Info: Key Parameters VDSM = 1800 ITAVM = 1845 ITRMS = 2890 ITSM = 21000 VT0 = 0.83 rT = 0.230 V A A A V mΩ Phase Control Thyristor 5STP 18F1800 Doc. No. 5SYA 1028-03 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

5stp18h4200

Abstract: 18H3600
Contextual Info: Key Parameters VDSM = 4200 ITAVM = 2075 ITRMS = 3260 ITSM = 32000 VT0 = 0.96 rT = 0.285 V A A A V mΩ Phase Control Thyristor 5STP 18H4200 Doc. No. 5SYA 1046-01 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

5STP 27H1800

Abstract: 27H1200 27H1800
Contextual Info: Key Parameters VDSM = 1800 ITAVM = 3000 ITRMS = 4710 ITSM = 47000 VT0 = 0.88 rT = 0.103 V A A A V mΩ Phase Control Thyristor 5STP 27H1800 Doc. No. 5SYA 1048-01 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

Contextual Info: Key Parameters VDSM = 4200 ITAVM = 425 ITRMS = 660 ITSM = 6400 VT0 = 1.00 rT = 1.500 V A A A V mΩ Phase Control Thyristor 5STP 04D4200 Doc. No. 5SYA 1025-02 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

ABB 4600

Abstract: ABB 5STP 12 5STP12F4200 5STP 12F4200
Contextual Info: Key Parameters VDSM = 4200 ITAVM = 1225 ITRMS = 1920 ITSM = 15000 VT0 = 0.95 rT = 0.575 V A A A V mΩ Phase Control Thyristor 5STP 12F4200 Doc. No. 5SYA 1021-02 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

Contextual Info: Catalog 65481 AMP Sealed Connectors Note: This index lists all cataloged parts by base no. only. Complete part nos. with prefixes and/or suffixes are shown on the page(s) indicated. Part Number Index Page P a rt No. Page 171630 8-9 184008 58, 63 206151 40