RT/DUROID 5880 Search Results

RO4403

Abstract: Rogers RO4003 rt/duroid 5880 RO4450F rogers 5880 RO3006 RO4350B rogers laminate materials RO4450B RO3210
Contextual Info: Ordering Information: Standard Thickness, Tolerance and Panel Size Rogers’ high frequency laminates can be purchased by contacting a Rogers Customer Service Representative at 480 961-1382 or one of our international offices listed below. To ensure that you receive the material for your application, please include order information for each of the

SMTO-8

Abstract: WATKINS-JOHNSON CO WATKINS-JOHNSON CO SMTO-8 IN5880
Contextual Info: A Revolutionary RF/Microwave "Surface-Mount" Product Line by: Louis M. Seieroe, Kenneth S. Ledford, Timothy J. Bianey and Louis Hsiao Watkins-Johnson Company Palo Alto, CA The emphasis on improving system per­ formance by adding new features, while at the same time reducing overall system

RF331

Abstract: RT DUROID 5880 RF3311
Contextual Info: BROADBAND HIGH REPEATABILITY TO-5 RELAY SPDT DC–8 GHz SERIES DESIGNATION RF311 RF331 RELAY TYPE RF311 SPDT RF TO-5 relay RF331 Sensitive, SPDT RF TO-5 relay INTERNAL CONSTRUCTION UNI-FRAME SERIES PERFORMANCE FEATURES UPPER STATIONARY CONTACT MOVING CONTACT

RF311

Contextual Info: BROADBAND HIGH REPEATABILITY TO-5 RELAY SPDT DC–8 GHz SERIES DESIGNATION RF311 SPDT RF TO-5 relay Sensitive, SPDT RF TO-5 relay INTERNAL CONSTRUCTION PERFORMANCE FEATURES UPPER STATIONARY CONTACT MOVING CONTACT ARMATURE LOWER STATIONARY CONTACT ENVIRONMENTAL AND

rogers 5880

Abstract: RT DUROID 5880 rt/duroid 5880
Contextual Info: BROADBAND HIGH REPEATABILITY TO-5 RELAY SPDT DC–8 GHz SERIES DESIGNATION RF311 RF331 RELAY TYPE RF311 SPDT RF TO-5 relay RF331 Sensitive, SPDT RF TO-5 relay INTERNAL CONSTRUCTION UNI-FRAME SERIES PERFORMANCE FEATURES UPPER STATIONARY CONTACT MOVING CONTACT

AN-A002

Abstract: AN-G002 testing amplifier circuit ATF-10136 TF-10136 low noise design ATF 10136 stub tuner matching 10136 stub tuner waveguide AM Noise Reduction System
Contextual Info: W hpfiM %PH AE CWKLAERT DT mL' AN-G 002 A TF-10136 Dem onstration Am plifier Novem ber, 1990 Introduction This Applications Bulletin describes a one stage low noise am plifier designed using the HP ATF-10136 G aAs FET transistor. This amplifier demonstrates the capabilities of this

ATF13136

Abstract: AN-A002 transistor atf TVRO stub tuner matching 5091-9055E ATF-13136
Contextual Info: ATF-13X36 Demonstration Amplifier Application Note G001 Although the following information covers the ATF-13136, the ATF-13336 and the ATF-13736 could be substituted, with some degradation in noise performance. Introduction This Application Note describes a one stage low noise amplifier

rf311

Abstract: RF311RF331 J412 to-5 RELAY-SPDT RF300 motor RT DUROID 5880 er116c
Contextual Info: BROADBAND HIGH REPEATABILITY TO-5 RELAY SPDT DC–8 GHz SERIES DESIGNATION RF311 RF331 RELAY TYPE RF311 SPDT RF TO-5 relay RF331 Sensitive, SPDT RF TO-5 relay INTERNAL CONSTRUCTION UNI-FRAME SERIES PERFORMANCE FEATURES UPPER STATIONARY CONTACT MOVING CONTACT

gold detector circuit free

Abstract: coil gold detector microstrip directional coupler yig oscillator rt/duroid 5880 hfss directional coupler sampling gate stripline directional couplers 20ghz vco ghz coupler
Contextual Info: Novel Design for Microwave Source Author: Saddique Mohammed Published in: Microwave Engineering Europe Date: October 1998 BACKGROUND As in all other fields of electronics, the microwave subsystem is undergoing a period of miniaturisation. The drive from microwave component purchasers who want to pack as much

Contextual Info: BROADBAND HIGH REPEATABILITY TO-5 RELAY SPDT DC–8 GHz SERIES DESIGNATION RF311 RF331 RELAY TYPE RF311 SPDT RF TO-5 relay RF331 Sensitive, SPDT RF TO-5 relay INTERNAL CONSTRUCTION UNI-FRAME SERIES PERFORMANCE FEATURES UPPER STATIONARY CONTACT MOVING CONTACT

NE3517S03

Abstract: rt/duroid 5880 RT DUROID 5880 NE3517S03-A marking t1c rogers 5880 HS350 NE3517S03-T1D-A NE3517S03-T1C rt duroid
Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3517S03 K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET FEATURES • Super low noise figure, high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • K-band Micro-X plastic S03 package APPLICATIONS

NE3514S02

Abstract: NE3514 NE3514S02-A transistor "micro-x" "marking" 3 RT DUROID 5880 NE3514S02-T1D NE3514S02-T1C-A ir260 N-CHANNEL HJ-FET NE3514S02-T1D-A
Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3514S02 K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.75 dB TYP., Ga = 10 dB TYP. @ f = 20 GHz • Micro-X plastic S02 package APPLICATIONS

NE3517S03-A

Abstract: NE3517S03-T1C NE3517S03 HS350
Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3517S03 K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET FEATURES • Super low noise figure, high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • K-band Micro-X plastic S03 package APPLICATIONS

RT DUROID 5880

Abstract: NE3512 NE3512S02-T1D-A PG10592EJ01V0DS HS350
Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3512S02 C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic S02 package APPLICATIONS

AD8313-EVAL

Abstract: AD8313 EVAL-AD8313EB sma 906 SMA pcb footprint Connector
Contextual Info: AD8313 Evaluation Board EVAL-AD8313EB BOARD DESCRIPTION Schematic and Layout Figure 5 shows the schematic of the evaluation board that was used to characterize the AD8313. Note that uninstalled components are drawn in as dashed. This is a 3-layer board signal, ground, and power , with a Duroid

Contextual Info: SIEMENS ICs for Communications LNA/MIXER P M B 2332 Version 1.2 Preliminary Specification 06.96 T2332-XV12-P2-7600 053SbO S 0 C H flb 4 3 7bfc> E d itio n 06 .96 A u s g a b e 06 .9 6 P u b lis h e d b y S ie m e n s A G , B e re ic h H a lb le ite r, M a rk e tin g K o m m u n ik a tio n , B ala n s tra B e 73,

NE3512S02-T1D-A and s2p

Abstract: rt/duroid 5880 NE3512 NE3512S02-T1C ne3512s02 s2p d marking Micro-X maximum gain s2p NE3512S02-T1C-A NE3512S02-T1D-A HS350
Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3512S02 C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic S02 package APPLICATIONS

ne3514s02

Abstract: NE3514 NE3514S02-T1C s2p marking t1c rogers 5880 HS350 k-band amplifier
Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3514S02 K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.75 dB TYP., Ga = 10 dB TYP. @ f = 20 GHz • Micro-X plastic S02 package APPLICATIONS

NE350184C

Abstract: NE350184C-T1A-A rogers 5880 rt/duroid 5880 17802A GA-13 HS350 NE350184C-T1 NE350184C-T1A k-band amplifier
Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE350184C K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • Micro-X ceramic 84C package APPLICATIONS

Contextual Info: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES_ • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP • LOW NOISE: 1.5 dB TYP at 500 MHz

NE3514

Abstract: NE3514S02 HS350 PG10593EJ01V0DS
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3514S02 K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.75 dB TYP., Ga = 10 dB TYP. @ f = 20 GHz • Micro-X plastic S02 package APPLICATIONS

ne3511s02 s2p

Abstract: NE3511S02 NE3511S02-T1D rt/duroid 5880 HS350 NE3511S02-T1C NE3511S02-T1C-A lnb ku-band rogers 5880
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3511S02 X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.30 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic S02 package

MJ 15007 transistor

Abstract: MJ 15007 NE41634 transistor XM SOT-89 Transistor 33735 low noise transistor bc 179 NE46134 equivalent
Contextual Info: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES_ • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP • LOW NOISE: 1.5 dB TYP at 500 MHz

GPS05121

Abstract: PMB2331
Contextual Info: ICs for Communications MIXER PMB 2331 Version 1.2 Preliminary Data Sheet 02.96 T2331-XV12-P1-7600 PMB 2331 Revision History: Previous Version: Page in Version Page (in new Version) Current Version: 02.96 none Subjects (major changes since last revision)