RSJC Search Results

OPA111

Abstract: OPA111AIH OPA111AMH OPA111BIH OPA121 OPA121ACH OPA121BCP
Contextual Info: C ir w a y 0 PA 111/121 V th A J i SIGNAL PROCESSING EXCEUJSNCE PRECISION OPERATIONAL AMPLIFIER PRELIMINARY SPECIFICATIONS FEATURES/BENEFITS * * * * * * Low noise Low input bias current Low input offset voltage Low drift [jjaji conimon-modfi rsjcction High open-loop gain

5L27

Abstract: OP-37 HA2-5127 HA-5127 HA-5127A
Contextual Info: - H A - 5 1 2 7 Ü f ê j g , m t y - t '•/ M E Ä - H A R R I S i • « • A * Í I Ü f S E E : 3n V / v r H z u - 121 h : 10V/ u s « ai mt t HA-5127A HA-5127 * Vs-±15V « S t f f ±22 ±22 Ta=25'C A ^ € £ / / V ± 0.7 ±0 .7 V • r f f j f ' J P f , rsjCM RR

stk 300W

Abstract: AACE R3000A TFK J BD 176 NAFI TX39 jalr hce 4060 AAAAEU TFK F BD 175
Contextual Info: 32
 TX System RISC TX39   
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Contextual Info: UESI101 UES1102 UES1103 RECTIFIERS High Efficiency, 2.5A BYV27-50 BYV27-100 BYV27-150 FEATURES DESCRIPTION • • • • An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast recovery and low forward voltage are

Contextual Info: UES1301 BYV28-50 UES1302 BYV28-100 UES1303 BYV28-150 RECTIFIERS High Efficiency, 3.5A FEATURES DESCRIPTION • • • • An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast recovery and low forward voltage are

IRF1Bc40g

Abstract: IRF1BC40 IRF1BC40GLC SAJ 220 IRFIBC40GLC 7z mosfet ID37A
Contextual Info: PD-9.1211 International S Rectifier IRFIBC40GLC HEXFET Pow er M O SFET Isolated Package High Voltage lsolatlon= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance V DSS = 600V R DS on = 1 In = 3.5A D escription Third Generation HEXFETs from International Rectifier provide the designer

15N15

Abstract: rfm15n15 diode RA 225 R
Contextual Info: R FM 15N 12/15N 15 R FP15N12/15N15 3 H a r r is N-Channel Enhancement-Mode Power Field-Effect Transistors A u g u s t 1991 Packages Features T 0 -204A A BOTTOM VIEW • 15 A , 1 2 0V a n d 150V • r D S on) = 0 .1 5 f l DRAIN (FLANGE) SOURCE • S O A is P o w e r-D is s ip a tio n L im ite d

sinewave inverter 5000 watt

Abstract: C157C ALPS lcd inverter C149M10 High power SCR c157a C158PB C154 C165A C158
Contextual Info: INVERTER SCR's SELECTOR GUIDE 2000 1900 1000 1700, 1600 1500 1400 1300 i/i 5 1200 § J> Iioo z 5 1000 E g 900 < (9 g 800 700 600 500 tf IO uV * IO fO o 400 300 <0 ro o * tO fO o 200 100 25 35 63 MO 225 275 300 400 500 700 800 850 900 1000 1150 1500 RMS C U R R E N T -A M P E R E S

GE10016

Abstract: GE10023 GE10015 GE10020 GE10022 GEI0020 GE1001
Contextual Info: u i a u Q D P P n GE10015,16, 20.21.22.23 NPN POWER DARLINGTON TRANSISTORS 500 VOLTS 40-60 AMPS, 250 WATTS These devices are designed for use in high speed switching applications, such as off-line switching power supplies, AC & DC motor control, UPS systems, ultra sonic equipment and

Contextual Info: P D - 9.1106 International H^lRectffier IRGBC20MD2 Short Circuit Rated Fast Copack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short circuit rated -1 Ops @125°C, VGE = 15V • Switching-loss rating includes all "tail” losses

KE7245A1

Abstract: diode 345
Contextual Info: 3RE D POWEREX INC • 7SSMb21 Q0DM3Ô2 M H P R X mNWDL KE7245A1 Powerex, Inc., HIIHs Street, Youngwood, Pennsylvania 1S697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Six-Darlington Transistor Module

KSF24505

Abstract: ksf2 transistor C 459 transistor 1240 SF245
Contextual Info: POWEREX I N C 3 TE D • TSTMbSl m m e n e x _ OODHObM 1 * P R X KSF24505 Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 F S S t S w itc h in g

Contextual Info: SAM S UN G E L E C T R O N I C S INC TlbMlHE DGCHBbM b M S M Ö K 4EE D LM317 LINEAR INTEGRATED CIRCUIT 3-TERMINAL POSITIVE ADJUSTABLE REGULATOR This monolithic integrated circuit is an adjustable 3-terminal positive voltage regulator designed to supply more than 1,5A of load current with

Marking v5j

Contextual Info: MP SERIES □ □ □ □ □ Industry’s widest range of TO-style power resistors! Standard resistance range: 0 .0 1 fi to 5 6 K fl Standard tolerance: ±1%, ±2%, ±5% available to 0.1% Non-Inductive performance Resistor is electrically isolated from the mounting surface

MRF393

Contextual Info: ioducti, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN Silicon Push-Pull RF Power TVansistor MRF393 . . . designed primarily for wideband large-signal output and driver amplifier

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MJ16010 Designer's Data Sheet MJW16010 SWITCHMODE Series NPN Silicon Power Transistors MJ16012* These transistors are designed for high-voltage, high-speed, power switching in

UJT-2N2646 PIN DIAGRAM DETAILS

Abstract: speed control of dc motor using ujt scr c107m TRANSISTOR equivalent UJT pin diagram 2N2646 1000w inverter PURE SINE WAVE schematic diagram TY6008 triac ot 239 class d 1000w amplifier inverter welder 4 schematic thyristor zo 402
Contextual Info: Theory and Applications Chapters 1 thru 9 Selector Guide Data Sheets Outline Dimensions and Leadform Options Index and Cross Reference E (g ) M OTOROLA THYRISTOR DATA Prepared by Technical Information Center This second edition of the Thyristor Data Manual has been revised extensively to reflect

Contextual Info: _^ 2 • 4305571 0DS4425 ÛSE ■ HAS RFH30N12 RFH30N15 H a r r is N-Channel Enhancement-Mode Power Field-Effect Transistors A u g u st 1991 Package Features TO-218AC • 30A , 120V and 150V TOP VIEW • rp g to n = 0 .0 7 5 ÎÎ • SOA is Power-Dissipation Limited

PN200

Abstract: PN4250A
Contextual Info: S E M I C O N D U C T O R ¡m PN4250A PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absolute Màximum RStinQS

PN200

Abstract: PN4249
Contextual Info: SEMICONDUCTOR PN4249 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absolute Màximum RStinQS TA = 2 5 ° C unless o th e rw ise noted

Contextual Info: 4302571 0 0 5 4 7 5 ‘ï LT? • HAS ÎH HARRIS RFD12N06RLE, RFD12N06RLESM U U RFP12N06RLE S E M , C O N D U C T O R January1994 N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors MegaFETs Features Packages • 12A,60V • r DS(on) RFD12N06RLE (TO-251)

Contextual Info: HA RR IS S E M I C O N D S E CT OR böE D • 4 3 02 27 1 G G S G 2 ti3 Lfll « H A S HGTG24N60D1D ÍE 24A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode December 1993 Package Features JEDEC STYLE TO-247 TOP VIEW • 24 Amp, 600 Volt • Latch Free Operation

C 32725

Abstract: BC327 C327 C327 C 327-25 C327 PNP BC327B c328 bc328c
Contextual Info: BC327,-16,-25 BC328,-16,-25 MAXIMUM RATINGS Rating S ym bol BC 327 VCEO -4 5 C o lle c to r-B a s e V o lta g e VCBO - 50 E m itte r-B a s e V o lta g e V £B O - 5.0 V dc >C -8 0 0 m Adc PD 625 5.0 C o lle c to r-E m itte r V o lta g e C o lle c to r C u rre n t —

MPS4258

Contextual Info: M A X IM U M RATINGS Symbol Value Collector-Emitter Voltage VCEO -1 2 Vdc Collector-Base Voltage VCBO -1 2 Vdc Emitter-Base Voltage Ve b o Rating Unit -4 .5 Vdc Collector Current — Continuous >c -80 m Adc Total Device Dissipation @ Derate above 25°C = 25°C