RSH23 Search Results

SD-041-12-22-211

Abstract: T-23 2901222041 SD 102 M
Contextual Info: BLUE ENHANCED PIN PHOTODIODES SPECIFICATIONS Responsivity: Part Number 0.20 A/W min., 0.23 A/W typ. @ 450nm Total Area mm2 SD 041-12-22-011 isolated –211 0.85 SD 076-12-22-011 isolated -211 2.91 SD 100-12-22-021 isolated -221 5.1 SD 172-12-22-021 isolated -221

Contextual Info: PHOTODIODE ARRAYS SPECIFICATIONS Part Number SD 219-51-03-301 SD 484-52-05-301 Number of Elements 12 32 `` `` Element Dimensions Pitch Responsivity Shunt Resistance1 Dark Current1 at 10V mm 0.965 x 2.01 (mm) Min. (A/W) Min. (MΩ) Max. (nA) Max. (pF) Typ.

Contextual Info: A dvanced P H o r o ik , I n c . ULTRA-LOW NOISE PIN PHOTODIODES SPECIFICATIONS Responsivity: 0.32 A/W minimum, 0.36 A/W typical @ 632.8nm; 0.50 A/W minimum, 0.55 A/W typical @ 900nm Series Resistance: 100£2maximum measured by applying +10mA to photodiode and measuring voltage

Contextual Info: Blue/Visible Blue Enhanced PIN Photodiodes Specifications Responsivity: 0.20 A/W minimum, 0.28 A/W typical @ 450nm Series Resistance: 100Ω maximum measured by applying +10mA to photodiode and measuring voltage across anode and cathode Part Number Active Area

445142

Contextual Info: Ultra Low Noise Ultra-Low Noise PIN Photodiodes Specifications Responsivity: Series Resistance: 0.50 A/W minimum, 0.55 A/W typical @ 900nm 100Ω maximum measured by applying +10mA to photodiode and measuring voltage across anode and cathode Part Number

T-23

Contextual Info: UV ENHANCED PIN PHOTODIODES SPECIFICATIONS Responsivity: Part Number 0.10 A/W min., 0.18 A/W typ. @ 365nm Total Area mm2 SD 172-13-23-222 15 Active Area Shunt Resistance1 (in) 0.185 x Dark Current1 at 5V Breakdown Voltage2 at 10µA Capacitance3 NEP4 Max

0852321021

Abstract: T-23 178 09T
Contextual Info: BI-CELL AND QUADRANT PHOTODIODES SPECIFICATIONS PER ELEMENT Responsivity: 0.32 A/W min., 0.38 A/W typ. @ 632.8nm; 0.50 A/W min., 0.62 A/W typ. @ 900nm Non-uniformity between elements: Part Number Total Shunt Area Resistance1 per Element (mm2) 5% deviation max., 1% typ.

111 305

Abstract: T-23
Contextual Info: ULTRA LOW NOISE PIN PHOTODIODES SPECIFICATIONS Responsivity: Part Number 0.32 A/W min., 0.38 A/W typ. @ 632.8nm; 0.50 A/W min., 0.62 A/W typ. @ 900nm Total Area mm2 SD 057-14-21-011 1.67 Active Area (in) 0.051 x Shunt Resistance1 Dark Current1 at 5V Breakdown

Contextual Info: ULTRA LOW NOISE PIN PHOTODIODES SPECIFICATIONS Responsivity: Part Number 0.32 A/W min., 0.38 A/W typ. @ 632.8nm; 0.50 A/W min., 0.62 A/W typ. @ 900nm Total Area mm2 SD 057-14-21-011 1.67 Active Area (in) 0.051 x Shunt Resistance1 Dark Current1 at 5V Breakdown

Contextual Info: Arrays Photodiode Arrays Specifications Part Number Number of Elements Element Dimensions Pitch Responsivity Shunt1 Resistance Dark Current1 @ 10V Capacitance @ 0V Uniformity2 NEP3 . . mm (mm) (min) (A/W) (min) (M-Ohm) (max) (nA) (max) (pF) (typ) (%) (typ)

T-23

Contextual Info: SOLDERABLE CHIPS SPECIFICATIONS Responsivity: Part Number SD 150-61-2537 0.34 A/W min., 0.40 A/W typ. @ 632.8nm; 0.55 A/W min., 0.66 A/W typ. @ 900nm Total Active Area Chip Dimensions mm2 (in) 9 ISC1 Shunt Resistance2 Dark Current2 at 1V Capacitance3 NEP4

Contextual Info: UV ENHANCED PIN PHOTODIODES SPECIFICATIONS Responsivity: Part Number 0.10 A/W min., 0.18 A/W typ. @ 365nm Total Area mm2 SD 172-13-23-222 15 Active Area Shunt Resistance1 (in) 0.185 x Dark Current1 at 5V Breakdown Voltage2 at 10µA Capacitance3 NEP4 Max

10011210

Abstract: 0571121
Contextual Info: General Purpose Pin General Purpose PIN Photodiodes Specifications Responsivity: 0.32 A/W minimum, 0.36 A/W typical @ 632.8nm; 0.50 A/W minimum, 0.55 A/W typical @ 900 nm Series Resistance: 100Ω maximum measured by applying +10mA to photodiode and measuring voltage across anode and cathode

T-23

Abstract: ID23
Contextual Info: PHOTODIODE ARRAYS SPECIFICATIONS Part Number SD 219-51-03-301 SD 484-52-05-301 Number of Elements 12 32 `` Pitch Responsivity Shunt Resistance1 Dark Current1 at 10V mm 0.965 x 2.01 (mm) Min. (A/W) Min. (MΩ) Max. (nA) Max. (pF) Typ. (%) Typ. (W/√Hz) 1.01

Contextual Info: GENERAL PURPOSE PIN PHOTODIODES SPECIFICATIONS Responsivity: Part Number 0.32 A/W min., 0.38 A/W typ. @ 632.8nm; 0.50 A/W min., 0.62 A/W typ. @ 900nm Total Area mm2 SD 057-11-21-015 1.67 Active Area (in) 0.051 x Shunt Resistance1 Dark Current1 at 5V Breakdown

Contextual Info: BLUE ENHANCED PIN PHOTODIODES SPECIFICATIONS Responsivity: Part Number 0.20 A/W min., 0.23 A/W typ. @ 450nm Total Area mm2 SD 041-12-22-011 isolated –211 0.85 SD 076-12-22-011 isolated -211 2.91 SD 100-12-22-021 isolated -221 5.1 SD 172-12-22-021 isolated -221

Contextual Info: BI-CELL AND QUADRANT PHOTODIODES SPECIFICATIONS PER ELEMENT Responsivity: 0.32 A/W min., 0.38 A/W typ. @ 632.8nm; 0.50 A/W min., 0.62 A/W typ. @ 900nm Non-uniformity between elements: Part Number Total Shunt Area Resistance1 per Element (mm2) 5% deviation max., 1% typ.

Contextual Info: Solderable Solderable Chips Specifications Responsivity: 0.34 A/W minimum, 0.38 A/W typical @ 632.8nm; 0.55 A/W minimum, 0.60 A/W typical @ 900 nm Series Resistance: 100Ω maximum measured by applying +10mA to photodiode and measuring voltage across anode and cathode

Contextual Info: UV Enhanced UV Enhanced PIN Photodiodes Specifications Responsivity: Series Resistance: Part Number 0.10 A/W minimum, 0.18 A/W typical @ 365nm 100Ω maximum measured by applying +10mA to photodiode and measuring voltage across anode and cathode Dark Current1