RS-170 IMPEDANCE MATCH Search Results

MPN3002

Abstract: 1N5719 1N5767 MPN3001
Contextual Info: Glass Package PIN Diodes for RF Switching and Attenuating A15 PACKAGE Description: Features: The switching diodes are designed for low power, general-purpose switch and switching applications up to 2 GHz. The attenuator diodes have guaranteed R S slopes making them ideal for impedance matched attenuators

AN0015

Abstract: pi RESISTOR NETWORK NBB-300 RFMD nbb 402 RP Lchoke
Contextual Info: AN0015 15 AN0015 Design of “PI” and “T” Network Attenuators for Inter-Stage Buffering Design of “PI” and “T” Network Attenuators for Inter-Stage Buffering The NBB and NDA-series matched amplifiers may be cascaded in a driver chain or used adjacent to other components

N0044

Abstract: n003620 Model 52K N0008 N0034 N0018
Contextual Info: SPICE Model Tutorial of the RSLIC18 AC Loop Application Note October 1998 AN9824 Author: Edward Berrios Introduction providing superb matching, temperature stability and gain accuracies. The AC loop of the RSLIC18 refers to the voice band path which provides full duplex

AN9824

Abstract: n003620 9824 Model 52K 400Z HC55180 HC55181 HC55182 HC55183 HC55184
Contextual Info: SPICE Model Tutorial of the RSLIC18 AC Loop Application Note October 1998 AN9824 Author: Edward Berrios Introduction providing superb matching, temperature stability and gain accuracies. The AC loop of the RSLIC18 refers to the voice band path which provides full duplex

N0044

Abstract: AN9824 400Z HC55180 HC55181 HC55182 HC55183 HC55184 4.00z N0033 A
Contextual Info: SPICE Model Tutorial of the RSLIC18 AC Loop TM Application Note October 1998 AN9824 providing superb matching, temperature stability and gain accuracies. The AC loop of the RSLIC18 refers to the voice band path which provides full duplex signal communication and

cw DWDM laser 1610

Abstract: Samsung Electronics Company DFB DL47B3A GR-468-CORE connector SAMSUNG 30 PIN SAMSUNG DL47B3A
Contextual Info: 1 Technical Data Sheet August 2001 OPTOELECTRONICS DIVISION DL47B3A 2.5 Gbps 1550 nm Direct Modulation DFB Laser Module Features ¾ High-performance MQW DFB Laser ¾ Built-in TEC, Thermistor and Monitor PD ¾ 25Ω Input Impedance Matching ¾ Built-in Optical Isolator

transistor t2

Abstract: 61 TRANSISTOR Q62702-C2158 transistor marking T2 marking BCV Q62702-C2159 Q62702-C2160 Q62702-C2155 transistor T1 Q62702-C2157
Contextual Info: NPN Silicon Double Transistors BCV 61 Preliminary Data To be used as a current mirror ● Good thermal coupling and VBE matching ● High current gain ● Low emitter-saturation voltage ● Type Marking Ordering Code tape and reel BCV 61 A BCV 61 B BCV 61 C

JC JB jt

Abstract: CP-24-7 AD833
Contextual Info: FEATURES Low noise Input voltage noise: 0.85 nV/√Hz Current noise: 2.0 pA/√Hz Excellent ac specifications 200 MHz bandwidth @ G = 4 271 V/ s slew rate Selectable Gain: x4, ×8, ×12, ×16 Active input impedance matching Single-ended input, differential output

DL47B3A

Abstract: GR-468-CORE dfb 10mw cw DWDM laser 1610
Contextual Info: 1 Technical Data Sheet February 2002 FIBEROPTICS DIVISION DL47B3A 2.5 Gbps 1550 nm Direct Modulation DFB Laser Module Features ¾ High-performance MQW DFB Laser ¾ Built-in TEC, Thermistor and Monitor PD ¾ 25Ω Input Impedance Matching ¾ Built-in Optical Isolator

CP-24-7

Abstract: PRB-4
Contextual Info: FEATURES Low noise Input voltage noise: 0.85 nV/√Hz Current noise: 2.0 pA/√Hz High speed 200 MHz bandwidth G = 12.04 dB 295 V/µs slew rate Selectable gain G = 12.04 dB (x4) G = 18.06 dB (×8) G = 21.58 dB (×12) G = 24.08 dB (×16) Active input impedance matching

Contextual Info: FEATURES Low noise Input voltage noise: 0.85 nV/√Hz Current noise: 2.0 pA/√Hz High speed 200 MHz bandwidth G = 12.04 dB 295 V/µs slew rate Selectable gain G = 12.04 dB (x4) G = 18.06 dB (×8) G = 21.58 dB (×12) G = 24.08 dB (×16) Active input impedance matching

Contextual Info: Electrical Specifications Subject to Change LTC6401-20 1.3GHz Low Noise, Low Distortion Differential ADC Driver for 140MHz IF FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 1.3GHz –3dB Bandwidth Fixed Gain of 10V/V 20dB 40.8dBm OIP3 at 140MHz

7025 vacuum tube

Abstract: 7119 tube 33566 nt 9731 xl 1225 AN267 xl 1225 transistor transistor 9747 34018 9033 transistor
Contextual Info: Order this document by AN267/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN267 MATCHING NETWORK DESIGNS WITH COMPUTER SOLUTIONS Prepared by: Frank Davis INTRODUCTION One of the problems facing the circuit design engineer is the design of high-frequency matching networks. Careful

AN267

Abstract: motorola transistor 7439 57075 xl 1225 transistor Silver mica capacitor xl 1225 32282 8233 vacuum tube transistor 7746
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN267/D SEMICONDUCTOR APPLICATION NOTE AN267 Matching Network Designs with Computer Solutions Prepared by: Frank Davis Freescale Semiconductor, Inc. INTRODUCTION One of the problems facing the circuit design engineer

Contextual Info: SIEMENS NPN Silicon Double Transistors BCV61 • To be used as a current mirror • Good thermal coupling and V be matching • High current gain • Low emitter-saturation voltage Type Marking Ordering Code tape and reel BCV 61 A BCV61 B BCV 61 C 1Js 1Ks

ADG441

Abstract: ADG441BN ADG442 ADG444
Contextual Info: a FEATURES 44 V Supply Maximum Ratings VSS to VDD Analog Signal Range Low On Resistance < 70 Ω Low ∆RON (9 Ω max) Low RON Match (3 Ω max) Low Power Dissipation Fast Switching Times tON < 110 ns tOFF < 60 ns Low Leakage Currents ( 3 nA max) Low Charge Injection (6 pC max)

ADG201

Abstract: ADG444BN ADG441 ADG441BN ADG442 ADG444 DG211 ADG202 ADG211
Contextual Info: a FEATURES 44 V Supply Maximum Ratings VSS to VDD Analog Signal Range Low On Resistance < 70 Ω Low ∆RON (9 Ω max) Low RON Match (3 Ω max) Low Power Dissipation Fast Switching Times tON < 110 ns tOFF < 60 ns Low Leakage Currents ( 3 nA max) Low Charge Injection (6 pC max)

Contextual Info: a FEATURES 44 V Supply Maximum Ratings VSS to VDD Analog Signal Range Low On Resistance < 70 Ω Low ∆RON (9 Ω max) Low RON Match (3 Ω max) Low Power Dissipation Fast Switching Times tON < 110 ns tOFF < 60 ns Low Leakage Currents ( 3 nA max) Low Charge Injection (6 pC max)

ADG1436YRUZ

Contextual Info: 1.5 Ω On Resistance, ±15 V/12 V/±5 V, iCMOS, Dual SPDT Switch ADG1436 FEATURES FUNCTIONAL BLOCK DIAGRAMS 1.5 Ω on resistance 0.3 Ω on-resistance flatness 0.1 Ω on-resistance match between channels Continuous current per channel LFCSP package: up to 400 mA

ADG1436YRUZ-REEL7

Abstract: MO-220-VGGC ADG1436 ADG1436YRUZ SPDT relay 12v
Contextual Info: 1.5 Ω On Resistance, ±15 V/12 V/±5 V, iCMOS, Dual SPDT Switch ADG1436 FEATURES FUNCTIONAL BLOCK DIAGRAMS 1.5 Ω on resistance 0.3 Ω on-resistance flatness 0.1 Ω on-resistance match between channels Continuous current per channel LFCSP package: up to 400 mA

Contextual Info: 1.5 Ω On Resistance, ±15 V/12 V/±5 V, iCMOS, Dual SPDT Switch ADG1436 FUNCTIONAL BLOCK DIAGRAMS FEATURES 1.5 Ω on resistance 0.3 Ω on-resistance flatness 0.1 Ω on-resistance match between channels Continuous current per channel LFCSP package: up to 400 mA

F0311018S

Abstract: Frequency Generator 1GHz Picosecond Pulse Labs amplifier picosecond 2100
Contextual Info: SUMITOMO ELECTRIC INDUSTRIES, LTD. 00.02.28 ♦ Features F0311018S 1 GHz Bandwidth • +5 V single power supply • 19 dB typical gain • 1.2 GHz typical 3 dB-cutoff-frequency • On-chip matching to 50 Ω • 40 mA typical operating current • Low-cost 8-lead SOP package

Adg441

Contextual Info: a FEATURES 44 V Supply Maximum Ratings VSS to VDD Analog Signal Range Low On Resistance < 70 Ω Low ∆RON (9 Ω max) Low RON Match (3 Ω max) Low Power Dissipation Fast Switching Times tON < 110 ns tOFF < 60 ns Low Leakage Currents ( 3 nA max) Low Charge Injection (6 pC max)

r16a diode

Abstract: adg444br ADG441BR ADG441TCHIPS
Contextual Info: a FEATURES 44 V Supply Maximum Ratings VSS to VDD Analog Signal Range Low On Resistance < 70 Ω Low ∆RON (9 Ω max) Low RON Match (3 Ω max) Low Power Dissipation Fast Switching Times tON < 110 ns tOFF < 60 ns Low Leakage Currents ( 3 nA max) Low Charge Injection (6 pC max)