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RS-160
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Redux
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E1/T1 Over Ip/ethernet Processor |
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213.07KB |
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RS16041%R
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Stackpole Electronics
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Metal Oxide Resistor - RS 1 604 1% R |
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100.49KB |
2 |
MURS160
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JCET Group
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Super fast recovery rectifier diodes in SMBG package with repetitive peak reverse voltage from 200V to 600V, average forward current of 1A, surge current capability up to 30A, and low reverse recovery time for high-frequency applications. |
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MURS160
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CREATEK Microelectronics
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Surface mount ultrafast plastic rectifier in SMB package with 400V or 600V peak reverse voltage, 1.0A to 2.0A average forward current, 50ns to 75ns reverse recovery time, suitable for high frequency rectification and switching applications. |
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MBRS160
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SLKOR
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MURS160
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SUNMATE electronic Co., LTD
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Surface mount ultrafast power rectifier diode in SMB/DO-214AA case, 1.0 A average rectified current, 50 to 600 V repetitive reverse voltage, low forward voltage drop, fast recovery time, suitable for automatic assembly. |
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MURS160(SMAG)
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JCET Group
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Super fast recovery rectifier diodes in SMAG package with repetitive peak reverse voltage from 200V to 600V, average forward current of 1.0A, and high surge current capability up to 30A. |
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MBRS160
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SUNMATE electronic Co., LTD
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Surface mount Schottky barrier diode MBRS120 to MBRS1100 with 1.0 A average rectified current, 20 to 100 V DC blocking voltage, 30 A non-repetitive peak forward surge current, and low forward voltage drop.Surface mount Schottky barrier diode MBRS120-MBRS1100 with 1.0A average rectified current, 20-100V DC blocking voltage, 30A peak forward surge current, low forward voltage drop, and operating junction temperature from -65 to +125°C.Surface mount Schottky barrier diode MBRS120-MBRS1100 with 1.0A average rectified current, 20-100V DC blocking voltage, 30A peak forward surge current, low forward voltage drop, and operating junction temperature from -65 to +125°C.Surface mount Schottky barrier diode MBRS120-MBRS1100 with 1.0 A average rectified current, 20-100 V reverse voltage range, 30 A peak forward surge current, low forward voltage drop, and operating junction temperature from -65 to +125 °C.Surface mount Schottky barrier diode MBRS120-MBRS1100 with 1.0 A average rectified current, 20-100 V DC blocking voltage, 30 A peak forward surge current, low forward voltage drop, and operating junction temperature from -65 to +125°C.Surface mount Schottky barrier diode MBRS120–MBRS1100 with 1.0 A average rectified current, 20–100 V DC blocking voltage, low forward voltage drop, and surge current rating of 30 A at 8.3 ms.Surface mount Schottky barrier diode MBRS120 to MBRS1100, 1.0A average rectified current, 20-100V DC blocking voltage, 30A peak forward surge current, low forward voltage drop, suitable for automatic assembly in low voltage applications. |
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MURS160
