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RQA0004PXDQS Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
RQA0004PXDQS		Renesas Technology	Silicon N-Channel MOS FET	Original	PDF	159.71KB	13
RQA0004PXDQS#H1		Renesas Electronics	MOSFET N-CH 16V 300MA UPAK	Original	PDF	174.79KB

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Renesas Electronics Corporation


Renesas Electronics Corporation RQA0004PXDQS-H1 MOSFET N-CH 16V 300MA UPAK
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RQA0004PXDQS Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
RQA0004PXTL-E Contextual Info: Preliminary Datasheet RQA0004PXDQS R07DS0418EJ0500 Rev.5.00 May 09, 2012 Silicon N-Channel MOS FET Features • High Output Power, High Efficiency Pout = +29.7 dBm, PAE = 68% f = 520 MHz  Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A	Original	RQA0004PXDQS R07DS0418EJ0500 PLZZ0004CA-A RQA0004PXTL-E	PDF
RQA0004PXTL-E Abstract: 155-8-1 905-170 diode MARKING CODE 917 RQA0004PXDQS ZO 103 MA 75 623 zo 107 SC-62 1012 Contextual Info: RQA0004PXDQS Silicon N-Channel MOS FET REJ03G1489-0100 Rev.1.00 Dec 12, 2006 Features • High Output Power, High Efficiency Pout = +29 dBm, PAE = 68% f = 520 MHz • Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A	Original	RQA0004PXDQS REJ03G1489-0100 PLZZ0004CA-A RQA0004PXTL-E 155-8-1 905-170 diode MARKING CODE 917 RQA0004PXDQS ZO 103 MA 75 623 zo 107 SC-62 1012	PDF
RQA0004PXTL-E Abstract: RQA0004PXDQS Contextual Info: Preliminary Datasheet RQA0004PXDQS R07DS0418EJ0500 Rev.5.00 May 09, 2012 Silicon N-Channel MOS FET Features • High Output Power, High Efficiency Pout = +29.7 dBm, PAE = 68% f = 520 MHz  Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A	Original	RQA0004PXDQS R07DS0418EJ0500 PLZZ0004CA-A RQA0004PXTL-E RQA0004PXDQS	PDF
RQA0004PXDQS Abstract: RQA0004PXTL-E RQA0004 k 1487 db30a Contextual Info: Preliminary Datasheet RQA0004PXDQS R07DS0418EJ0300 Rev.3.00 Sep 09, 2011 Silicon N-Channel MOS FET Features • High Output Power, High Efficiency Pout = +29.7 dBm, PAE = 68% f = 520 MHz  Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A	Original	RQA0004PXDQS R07DS0418EJ0300 PLZZ0004CA-A RQA0004PXDQS RQA0004PXTL-E RQA0004 k 1487 db30a	PDF
k 1487 Abstract: RQA0004 RQA0004PXTL-E RQA0004PX R07DS0418EJ0201 Contextual Info: Preliminary Datasheet RQA0004PXDQS R07DS0418EJ0201 Rev.2.01 Jun 27, 2011 Silicon N-Channel MOS FET Features • High Output Power, High Efficiency Pout = +29.7 dBm, PAE = 68% f = 520 MHz  Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A	Original	RQA0004PXDQS R07DS0418EJ0201 PLZZ0004CA-A k 1487 RQA0004 RQA0004PXTL-E RQA0004PX	PDF
rjp3053 Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5	Original	REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009	PDF
RQA0004PXDQS Abstract: RQA0004PXTL-E Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF