ROHM SOT89 MARKING Search Results

2sc3052ef

Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Contextual Info: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters

ECG015B

Abstract: MCR10JW000 ROHM SOT89 MARKING ECG015 marking 0603 CAPACITOR HP RF amplifier SOT-89
Contextual Info: DATA SHEET ECG015 BROADBAND HIGH OIP3 AMPLIFIER 1800 - 2500 MHz Features Applications „ „ 1800 to 2500 MHz Highly Reliable InGaP HBT Excellent Stability „ „ Multi-carrier Systems „ High Linearity Amplifiers „ Cellular, PCS, WLL Package Available -B SOT-89

ROHM SOT89 MARKING

Abstract: ECG009B-1000 ECG009 311 SOT89
Contextual Info: PRODUCTION DATA SHEET ECG009 BROADBAND HIGH OIP3 AMPLIFIER DC - 2500 MHz Features „ Applications DC to 2500 MHz 41 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 19.0 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 MHz 24.0 dBm Typical P1dB at 2170 MHz

9-GHz

Abstract: TOP MARKING C1 ROHM C100 ECG009 JESD22-A113-B MCH185A560JK marking c7 sot-89 JESD22-A108-A ROHM SOT89 MARKING resistor de 27k ohm
Contextual Info: PRODUCTION DATA SHEET ECG009 BROADBAND HIGH OIP3 AMPLIFIER DC - 2500 MHz Features Applications „ „ DC to 2500 MHz 41 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 19.0 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 MHz 24.0 dBm Typical P1dB at 2170 MHz

LL1608-F15N

Abstract: Amplifier 1W SOT-89 J2/TriQuint SOT-89 TAPE AND REEL
Contextual Info: PRODUCTION DATA SHEET ECG014 BROADBAND HIGH OIP3 AMPLIFIER 50 - 2000 MHz Features Applications „ „ 50 to 2000 MHz 41 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 20.5 dB Typical Gain at 900 MHz 23.5 dBm Typical P1dB at 1900 MHz Excellent Stability

F18NJ

Abstract: ROHM SOT89 MARKING 60-000346-000B ECJ-1VF1A105Z
Contextual Info: PRELIMINARY DATA SHEET ECG099 BROADBAND HIGH OIP3 AMPLIFIER DC - 2500 MHz Features Applications „ „ DC to 2500 MHz 41 dBm Typical OIP3 at 2140 MHz Highly Reliable InGaP HBT 19.0 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 & 2140MHz 5.6dB Typical noise figure at 900MHz

Marking R1P

Abstract: ROHM SOT89 MARKING MANUFACTURE of code ROHM
Contextual Info: Abbreviated Symbol Markings for Mini-Mold Produce • For SST SOT23 , SMT (SC59), UMT (SOT323) The model name of general small signal transistors is indicated by a two or three letter alphanum eric code string (see figure 1). the model name of digital transistors

267M3502104K

Abstract: 2425-C
Contextual Info: Preliminary Product Description SXB-4089 Sirenza Microdevices’ SXB-4089 amplifier is a high efficiency InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost, surface-mountable plastic package. 400-2500 MHz ½ W Medium Power InGaP/GaAs HBT Amplifier with

RF AMP marking c7 sot-89

Abstract: marking 25 mmic sot-89 9C0603 ordering Sirenza amplifier SOT-89 Marking
Contextual Info: Preliminary Product Description SXB-4089 Sirenza Microdevices’ SXB-4089 amplifier is a high efficiency InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost, surface-mountable plastic package. 400-2500 MHz ½ W Medium Power InGaP/GaAs HBT Amplifier with

xa3b

Contextual Info: SXA-389B Z SXA-389B(Z) 400MHz to 2500MHz ¼W Medium Power GaAs HBT Amplifier With Active Bias 400MHz to 2500MHz ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features

a3bz

Abstract: MMIC SXA 389Bz marking MCH18 SXA-389B trace code marking RFMD EL115
Contextual Info: SXA-389B Z SXA-389B(Z) 400MHz to 2500MHz ¼W Medium Power GaAs HBT Amplifier With Active Bias 400MHz to 2500MHz ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS Package: SOT-89 Product Description Features RFMD’s SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface mountable plastic

a3bz

Contextual Info: SXA389BZ SXA389BZ 400MHz to 2500MHz ¼W Medium Power GaAs HBT Amplifier With Active Bias 400MHz to 2500MHz ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS Package: SOT-89 Product Description Features RFMD’s SXA389BZ amplifier is a high efficiency GaAs Heterojunction

a3bz

Abstract: SXA-389BZ Sirenza amplifier SOT-89 Marking 1485C trace code marking RFMD lot code RFMD SXA389BZSQ
Contextual Info: SXA389BZ SXA389BZ 400MHz to 2500MHz ¼W Medium Power GaAs HBT Amplifier With Active Bias 400MHz to 2500MHz ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS Package: SOT-89 Product Description Features RFMD’s SXA389BZ amplifier is a high efficiency GaAs Heterojunction

a3bz

Abstract: SXA-389B Sirenza amplifier SOT-89 MMIC SOT 89 marking CODE c4 MCH18 267M3502104 marking c7 sot-89 marking code sirenza SXA-389BZSQ EL115
Contextual Info: SXA-389B Z SXA-389B(Z) 400MHz to 2500MHz ¼W Medium Power GaAs HBT Amplifier With Active Bias 400MHz to 2500MHz ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS Package: SOT-89 Product Description Features RFMD’s SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface mountable plastic

Xa2 TRANSISTOR

Abstract: XA2 MMIC SXA-289 Sirenza amplifier SOT-89 marking XA2 EDS-100622 RF transistor marking IN SOT-89 sxa289 TOP MARKING C1 ROHM ROHM SOT89 MARKING
Contextual Info: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable

XA2 MMIC

Abstract: MPO-100136 TOP MARKING C1 ROHM lot No
Contextual Info: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable

Contextual Info: SXB-2089Z SXB-2089Z 5MHz to 2500MHz Medium Power InGaP/GaAs HBT Amplifier 5MHz to 2500MHz MEDIUM POWER InGaP/GaAs HBT AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: SOT-89 Product Description Features RFMD’s SXB-2089Z amplifier is a high linearity InGaP/GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost, surface-mountable plastic package. These amplifiers are specially designed for use as

SXT-289

Abstract: transistor 289 marking 25 mmic sot-89 MMIC "SOT 89" marking Xa2 marking Xa2 TRANSISTOR xamp 034 XA2 MMIC
Contextual Info: Product Description Stanford Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth

Micro-X Marking E

Abstract: marking 47 gain block sot-363 SOT89 marking GA ecg006f sot-363 gain blocks SOT-363 marking ROHM Micro-X Marking v micro-x marking 3
Contextual Info: ECG006 PRELIMINARY DATA SHEET HIGH LINEARITY BROADBAND AMPLIFIER DC - 6000 MHz Features Applications „ „ Broadband Gain Blocks „ „ „ „ DC to 6000 MHz 15 dB Gain at 1000 MHz 15 dBm Output P1dB at 1000 MHz 32 dBm Output IP3 at 1000 MHz 4.0 dB Noise Figure at 2000 MHz

ECG001C-500

Abstract: SOT89 marking GA transistor "micro-x" "marking" 3 micro-x marking 3 Micro-X Marking E MARKING 30 SOT89 DBM ECG001F-3000
Contextual Info: ECG001 PRELIMINARY DATA SHEET HIGH LINEARITY BROADBAND AMPLIFIER DC - 6000 MHz Features Applications „ „ Broadband Gain Blocks „ „ „ „ DC to 6000 MHz 20.0 dB Gain at 1000 MHz 12.5 dBm Output P1dB at 1000 MHz 25 dBm Output IP3 at 1000 MHz 3.7 dB Noise Figure at 2000 MHz

TAJB105KLRH

Abstract: SXB-2089Z GaAs pHEMT MMIC medium power amplifier ROHM TRACE CODE MCH185C
Contextual Info: SXB-2089Z SXB-2089Z 5MHz to 2500MHz Medium Power InGaP/GaAs HBT Amplifier 5MHz to 2500MHz MEDIUM POWER InGaP/GaAs HBT AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SXB-2089Z amplifier is a high linearity InGaP/GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost, surface-mountable plastic package. These amplifiers are specially designed for use as

TAJB105KLRH

Abstract: SXB-2089Z MCH185A220J PSF-S01 marking c7 sot-89
Contextual Info: SXB-2089Z SXB-2089Z 5MHz to 2500MHz Medium Power InGaP/GaAs HBT Amplifier 5MHz to 2500MHz MEDIUM POWER InGaP/GaAs HBT AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SXB-2089Z amplifier is a high linearity InGaP/GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost, surface-mountable plastic package. These amplifiers are specially designed for use as

marking 25 mmic sot-89

Abstract: RF transistor marking IN SOT-89 MARKING 30 SOT89 DBM
Contextual Info: Product Description Stanford Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth

MARUWA CAPACITORS "H series"

Abstract: transistor "micro-x" "marking" 3 Micro-X Marking E
Contextual Info: ECG002 DATA SHEET HIGH LINEARITY BROADBAND AMPLIFIER DC - 6000 MHz Features Applications „ „ Broadband Gain Blocks „ „ „ „ DC to 6000 MHz 20 dB Gain at 1000 MHz 15 dBm Output P1dB at 1000 MHz 29 dBm Output IP3 at 1000 MHz 3.8 dB Noise Figure at 2000 MHz