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    ROE D3 Search Results

    ROE D3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    RB1002

    Abstract: UM83C002 ST412HP UM83C001 127fl
    Contextual Info: UNICORN MIC ROE LECTRONICS 54E D • ^76700 QGQQ37S *1 ■ UM83C002 Ü M Ö RAM Buffer Controller Features ■ ■ * ■ ■ ■ ■ ■ No lost RAM cycles for DMA break-in 3 DMA channels Host processor port Refresh circuit for dynamic RAM buiit-in RAM access priority network


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    127fl7ggqd37sum83c002rb1002+3st412hpum83c001127fl PDF

    48v, 20 amp battery charger circuit diagram

    Abstract: ic ana 650 ana 650 chang capacitor M62258FP 1.6V charger BATTERY CHARGE I.C
    Contextual Info: A R Ytion. MITSUBUSHI <Dig./Ana. INTERFACE> e. ang a N cific ct to ch I e p s e j l I M fina sub M62258FP L is is not alimits are Th tric P RoE e c ti : rame N e pa Som GENERAL PURPOSE BATTERY CHARGER CONTROL IC New Product GENERAL DESCRIPTION PIN CONFIGURATION TOP VIEW


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    m62258fpm34xxx48v, 20 amp battery charger circuit diagramic ana 650+4ana 650chang capacitor1.6v chargerbattery charge i.c PDF

    252063

    Contextual Info: Intel Wireless Flash Memory W18/W30 SCSP 128-Mbit WQ Family with Asynchronous SRAM Datasheet • Flash Architecture — Flexible, Multiple-Partition, Dual-Operation: Read-While-Write / Read-While-Erase — 32 Partitions, 4 Mbits each —31 Main Partitions, 8 Main Blocks each


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    w18/w30128-mbit--32-kwordw18/30+5pf48f3300w0ydq0rd38f3350wwzdq164psram8x10x1252063 PDF

    128W18

    Abstract: 28f128w18t Intel SCSP 28F128W18B 28F640W18T 128W-1 128W18B micron flash otp
    Contextual Info: 128-Mbit 1.8 Volt Intel Wireless Flash Memory W18 + 32-Mbit PSRAM Stacked-CSP Family Datasheet Product Features • ■ ■ ■ Flash Architecture — Flexible, Multiple-Partition, DualOperation: Read-While-Write / ReadWhile-Erase — 32 Partitions, 4 Mbits each


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    128-mbit32-mbit--32-kword128w18+12rd48f3000w0ybq0rd48f3000w0ytq032psramrd38f3040w0ybq0rd38f3040w0ytq028f128w18tintel scsp28f128w18b28f640w18t128w-1128w18bmicron flash otp PDF

    252063

    Contextual Info: Intel Wireless Flash Memory W30 SCSP 128WQ Family Datasheet • Flash Architecture — Flexible, Multiple-Partition, Dual-Operation: Read-While-Write / Read-While-Erase — 32 Partitions, 4 Mbits each —31 Main Partitions, 8 Main Blocks each ■ ■ —1 Parameter Partition, 8 Parameter + 7


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    128wq--32-kword128w30b128w30t+364psramrd38f3350wwzdq1252063 PDF

    64W18

    Abstract: FLASH MEMORY 38F W18 88 FLASH MEMORY 48F 64WQ 251407 PF38F2030W0YTQE PF38F2030W0YTQ1
    Contextual Info: Intel Wireless Flash Memory W18/W30 SCSP 64WQ Family with Asynchronous RAM Datasheet Product Features • ■ ■ ■ ■ Device Architecture — Flash Density: 64-Mbit — Async PSRAM Density: 8-, 16-, 32-Mbit — Async SRAM Density: 4-, 8-, 16-Mbit — Top, Bottom or Dual flash parameter


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    w18/w3064-mbit32-mbit16-mbit+13rd38f2240wwydqe64w30rd38f2240wwzdq0rd38f2240wwydq0rd38f2240wwdq164w18flash memory 38fw18 88flash memory 48f64wq251407pf38f2030w0ytqepf38f2030w0ytq1 PDF

    38F1020W0YBQ0

    Abstract: 28F320W18 38F1020W0YTQ0 flash "high temperature data retention" mechanism
    Contextual Info: Intel Wireless Flash Memory W18 SCSP 32-Mbit W18 + 8-Mbit SRAM (38F1020W0YTQ0, 38F1020W0YBQ0) Datasheet Product Features • Flash Architecture — Flexible, Multi-Partition, Dual-Operation: Read-While-Write / Read-While-Erase — 8 Partitions, 4 Mbits each


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    32-mbit38f1020w0ytq038f1020w0ybq032-kword+228f320w18flash "high temperature data retention" mechanism PDF

    FLASH MEMORY 38F

    Abstract: Intel SCSP 88-ball
    Contextual Info: Intel Wireless Flash Memory W30 SCSP 128WQ Family Datasheet • Flash Architecture — Flexible, Multiple-Partition, Dual-Operation: Read-While-Write / Read-While-Erase — 32 Partitions, 4 Mbits each —31 Main Partitions, 8 Main Blocks each ■ ■ —1 Parameter Partition, 8 Parameter + 7


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    128wq--32-kword128w30b128w30t+564psramrd38f3350wwzdq1flash memory 38fintel scsp88-ball PDF

    251407

    Abstract: RD48F2000W
    Contextual Info: Intel£ Wireless Flash Memory W18/W30 SCSP 64WQ Family Datasheet Product Features • ■ ■ ■ ■ ■ Device Architecture — Flash Density: 64-Mbit — Async PSRAM Density: 16-, 32-Mbit — Async SRAM Density: 4-, 8-, 16-Mbit — Top, Bottom or Dual flash parameter


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    w18/w3064-mbit32-mbit16-mbit+8100figurationrd48f2000w0zbq0rd38f2010w0ybq0rd38f2020w0ybq0rd38f2020w0zbq0rd38f2030w0ybq0251407rd48f2000w PDF

    W18 88

    Abstract: FLASH MEMORY 38F Intel SCSP FLASH MEMORY 48F intel 24024
    Contextual Info: Intel Wireless Flash Memory W18/W30 SCSP 128-Mbit WQ Family with Asynchronous SRAM Datasheet • Flash Architecture — Flexible, Multiple-Partition, Dual-Operation: Read-While-Write / Read-While-Erase — 32 Partitions, 4 Mbits each —31 Main Partitions, 8 Main Blocks each


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    w18/w30128-mbit--32-kwordw18/30+8128w18128w3064psramw18 88flash memory 38fintel scspflash memory 48fintel 24024 PDF

    Contextual Info: Intel£ Wireless Flash Memory W18/W30 SCSP 64WQ Family Datasheet Product Features • ■ ■ ■ ■ ■ Device Architecture — Flash Density: 64-Mbit — Async PSRAM Density: 16-, 32-Mbit — Async SRAM Density: 4-, 8-, 16-Mbit — Top, Bottom or Dual flash parameter


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    w18/w3064-mbit32-mbit16-mbit+6rd38f2030w0ztq064w30rd38f2030w0zbq1rd38f2030w0ztq164w18rd38f2040w0ybq0 PDF

    28F320W18

    Abstract: 32W18 38F1020W0YBQ0 38F1020W0YTQ0 252635
    Contextual Info: 32-Mbit 1.8 Volt Intel Wireless Flash Memory W18 + 8-Mbit SRAM StackedChip Scale Package 38F1020W0YTQ0, 38F1020W0YBQ0 Datasheet Product Features • Flash Architecture — Flexible, Multi-Partition, Dual-Operation: Read-While-Write / Read-While-Erase — 8 Partitions, 4 Mbits each


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    32-mbit38f1020w0ytq038f1020w0ybq032-kword+328f320w1832w18252635 PDF

    PF48F4400L0

    Abstract: RD38F3040L0YBQ0 rd38f405 RD48F4400L0 strataflash reliability PF48F4000L0YBQ0 5,5 KW asynchronous FLASH MEMORY 48F intel MLC flash Intel SCSP
    Contextual Info: Intel StrataFlash£ Wireless Memory System LV18/LV30 SCSP 768-Mbit LVQ Family with Asynchronous Static RAM Datasheet Product Features • ■ ■ ■ ■ Device Architecture — Code and data segment: 128- and 256Mbit density; PSRAM: 32- and 64-Mbit density; SRAM: 8 Mbit density.


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    lv18/lv30768-mbit256mbit64-mbit+1616-kword128-mbit256-mbitrd48f3000l0ytq0nz48f4000l0ytq0rd48f3000l0ybq0pf48f4400l0rd38f3040l0ybq0rd38f405rd48f4400l0strataflash reliabilitypf48f4000l0ybq05,5 kw asynchronousflash memory 48fintel mlc flashintel scsp PDF

    FLASH MEMORY 38F

    Abstract: 88-ball 28F320W18 38F1020W0YBQ0 38F1020W0YTQ0
    Contextual Info: Intel Wireless Flash Memory W18 SCSP 32-Mbit W18 + 8-Mbit SRAM (38F1020W0YTQ0, 38F1020W0YBQ0) Datasheet Product Features • Flash Architecture — Flexible, Multi-Partition, Dual-Operation: Read-While-Write / Read-While-Erase — 8 Partitions, 4 Mbits each


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    32-mbit38f1020w0ytq038f1020w0ybq032-kword+3flash memory 38f88-ball28f320w18 PDF

    RD38F3040L0YBQ0

    Abstract: flash "high temperature data retention" mechanism rd38f405 PF48F4400L Intel SCSP LV30 28F256L18 28F256L30 400000-40FFFF RD48F4400L
    Contextual Info: Intel StrataFlash£ Wireless Memory System LV18/LV30 SCSP 768-Mbit LVQ Family with Asynchronous Static RAM Datasheet Product Features • ■ ■ ■ ■ Device Architecture — Code and data segment: 128- and 256Mbit density; PSRAM: 32- and 64-Mbit density; SRAM: 8 Mbit density.


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    lv18/lv30768-mbit256mbit64-mbit+1516-kword128-mbit256-mbitrd48f3000l0ytq0nz48f4000l0ytq0rd38f3040l0ybq0flash "high temperature data retention" mechanismrd38f405pf48f4400lintel scsplv3028f256l1828f256l30400000-40ffffrd48f4400l PDF

    XO-31

    Abstract: AAD00-AAD04 wtl3164 weitek NS32580-30 NS32081
    Contextual Info: PRELIMINARY NS32580-20/NS32580-25/NS32580-30 Floating Point Controller G eneral Description The NS32580 Floating-Point Controller FPC is an interface device designed to couple the NS32532 Microprocessor with the Weitek WTL 3164 Floating-Point Data Path (FPDP).


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    ns32580-20/ns32580-25/ns32580-30ns32580ns32532ns32081+5xo-31aad00-aad04wtl3164weitekns32580-30 PDF

    TDA1011

    Abstract: SCN-8031 full bridge mosfet smps MEA8000 TDA1011 equivalent
    Contextual Info: Signetics Linear Products Preliminary Speech Synthesizer DESCRIPTION The MEA8000 is a 24-pin N MOS integrated circu it for generating good quality speech from dig ita l code w ith a program m able b it rate. The circu it is prim arily intended fo r applications in m icroprocessor controlled


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    mea800024-pin32-bittda1011+3scn-8031full bridge mosfet smpstda1011 equivalent PDF

    weitek 3164

    Abstract: WTL-3164-15 weitek FPU weitek AADD CA001 NS32532 t03h 32580-WTL3164 R4X20
    Contextual Info: PRELIM INARY NS32580-20/NS32580-25/NS32580-30 Floating Point Controller G eneral Description The NS32580 Floating-Point Controller FPC is an interface device designed to couple the NS32532 Microprocessor with the Weitek WTL 3164 Floating-Point Data Path (FPDP).


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    ns32580-20/ns32580-25/ns32580-30ns32580ns32532ns32081+9weitek 3164wtl-3164-15weitek fpuweitekaaddca001t03h32580-wtl3164r4x20 PDF

    RT5014

    Abstract: NS32081 BC-NB weitek S3258 e9421
    Contextual Info: PRELIMINARY NS32580-20/NS32580-25/NS32580-30 Floating Point Controller General Description The NS32580 Floating-Point Controller FPC is an interface device designed to couple the NS32532 Microprocessor with the Weitek WTL 3164 Floating-Point Data Path (FPDP).


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    ns32580-20/ns32580-25/ns32580-30ns32580ns32532ns32081+5rt5014bc-nbweiteks3258e9421 PDF

    Contextual Info: FEDL2240DIGEST-04 Issue Date: Nov 24, 2009 ML2240 4-Channel Mixing Oki ADPCM Algorithm-Based Speech Synthesis LSI GENERAL DESCRIPTION The ML2240 is a 4-channel mixing speech synthesis device which connects an external ROM expanded up to 128-Mbit maximum . This ML2240 allows to select the playback method from the 8-bit PCM, non-linear 8-bit


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    fedl2240digest-04ml2240128-mbit16-bit+114-bit PDF

    speech synthesizer

    Contextual Info: Signetics Linear Products Preliminary Speech Synthesizer DESCRIPTION The MEA8000 is a 24-pin N MOS integrated circu it for generating good qua lity speech from dig ita l code w ith a program m able b it rate. The circu it is prim arily intended fo r a pplications In m icroprocessor controlled


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    mea800024-pin32-bitspeech synthesizer PDF

    MSM9811

    Abstract: ROE capacitor m9811 MSM9811GS-BK QFP64-P-1414-0 RA21 RA23 QFP64-P-1414
    Contextual Info: FEDL9811DIGEST-02 1Semiconductor MSM9811 This version: May 2001 Previous version: Jun. 2000 4-Channel Mixing OKI ADPCM Type Voice Synthesis LSI This document contains minimum specifications. For full specifications, please contact your nearest Oki office or


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    fedl9811digest-02msm981114-bitroe capacitor+6m9811msm9811gs-bkqfp64-p-1414-0ra21ra23qfp64-p-1414 PDF

    amcc s5933

    Abstract: S5933 Logic diagram for asynchronous FIFO sc3528 Asynchronous FIFO ROE d3 74F32 74F74 CY7C464 IDT72240
    Contextual Info: S5933 32 Bit FIFO Example Application Note Revision 2 November 20, 1998 Introduction Asynchronous Design Example Objective This application note provides the designer with two external FIFO interface examples. Shown first is an asynchronous external 32 bit FIFO interface and considerations when


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    s5933amcc s5933logic diagram for asynchronous fifosc3528+6asynchronous fiforoe d374f3274f74cy7c464idt72240 PDF

    MSM9810B

    Abstract: ROE capacitor M9810B MSM9810BGS-BK QFP64-P-1414-0 RA21 RA23 QFP64-P-1414
    Contextual Info: FEDL9810BDIGEST-02 1Semiconductor MSM9810B This version: May 2001 Previous version: Jun. 2000 8-Channel Mixing OKI ADPCM Type Voice Synthesis LSI This document contains minimum specifications. For full specifications, please contact your nearest Oki office or


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    fedl9810bdigest-02msm9810b14-bitroe capacitor+6m9810bmsm9810bgs-bkqfp64-p-1414-0ra21ra23qfp64-p-1414 PDF