ROBINSON NUGENT 2.0 MM Search Results

Contextual Info: Robinson 2mm Headers /Musent — 2mm Headers, Dual Row P2 Series * * * 9 * * * * High temp, surface mount compatible 2mm pin-to-pin and row-to-row spacing Vertical or right angle through hole product Right angle insulator design with ribs stabilizes connector on PCB

OL-m 94V-0

Abstract: Robinson Nugent SM 945
Contextual Info: Robinson Nuacnt 2mm Sockets — 2mm Sockets P2 Series High temp, surface mount compatible Right angle socket offers variable standoff heights and locator posts to address 2.5" disc drive requirements Top and bottom inverse) entry option gives greater flexibility for PCB stacking

Contextual Info: DIMMPAK Robinson Nuaent — How to Order 8 Byte DIMM Sockets DIMS Series 5.0 volts Synch DRAM DIMS — 168 B SD 5 — TR Product S eries:. -Voltage Option 5 = 5.0 Volts Assembly Configuration: B = Single Row j£ 7 | RN DIMMPAK Plating Code: Specify TR

LA 7693

Abstract: lm 7933 lm 3178 SO 607 mh 4S72 LM 2741 LM 7493 pa 3029 b Robinson Nugent s2 Lm 304 PN
Contextual Info: RN PAK-50 Low Profile 2-Piece Connectors P50L Series Low profile .276" - .472" 7-12mm mated heights to address board stacking applications Eight sizes, 20-120 contacts Hlgh-temp Insulator compatible with IR and wave soldering Low insertion/withdrawal forces

Contextual Info: HIGH DENSITY Dual Read Out DIMM Sockets i DIMS Series Superior shock and vibration performance User friendly ejector system for easy module removal High temp material compatible with IR processes How to Order DIMS Series DIMS — XXX — A 5 — R 1 — TR

Contextual Info: HIGH DENSITY Dual Read Out DIMM Sockets ^ 2^7 DIMS Series, .300" 9 Effectively provides double density pack­ aging in single density footprint 9 Durability - 60 cycles minimum RN DIMMPAK 9 Vertical entry allows insertion/removal without disturbing “neighboring DIMMs”

Contextual Info: DIMMPAK Mugent -VRAM DIMM Socket * Effectively provides double density packaging * Superior shock and vibration performance * User friendly ejector system for easy module removal High temp material compatible with IR processes

Contextual Info: VRAM DIMM Socket * Effectively provides double density packaging * Superior shock and vibration performance * User friendly ejector system for easy module removal * High temp material compatible with IR processes * Positive locking of DIMM to socket * Supports JEDEC MO-172

LH0101 equivalent

Contextual Info: LH0101 3 3 N a t i o n a l mm Semiconductor LH0101 Power Operational Amplifier General Description Features The LH0101 Is a wideband power operational amplifier fea­ turing FET inputs, Internal compensation, virtually no cross­ over distortion, and rapid settling time. These features make

Contextual Info: HIGH DENSITY ^ 7_ Dual Read Out DIMM Sockets DIMS Series 9 Superior shock and vibration performani 9 User friendly ejector system for easy module removal 9 High temp material compatible with IR processes How to Order DIMS Series DIMS — XXX — A 5 — R 1 — TR

Contextual Info: HIGH DENSITY Dual Read Out DIMM Sockets 4 DIMS Series 9 Superior shock and vibration performance • User friendly ejector system for easy module removal * High temp material compatible with IR processes How to Order DIMS Series DIMS — XXX — A 5 — R 1 — TR

Contextual Info: 50 Mil Connectors N u gen t-With Power Ground Pin P50 Series * 20-100 position product * 2 amps/power ground pin Low insertion/withdrawal force * Redundant ribbon contact design insures high normal force, facilitates easy mateability and eliminates pin

Contextual Info: HIGH DENSITY 4 Byte — 8 Byte DIMM Sockets 100 position • Provides 4-byte support for 32-bit applications 112 positon MO-172 9 Supports video RAM applications 168 position MO-161 9 Offers all voltage and application keys supported by JED EC 9 Provides 8-byte support for 64-bit

Contextual Info: tß February 1995 Semiconductor LH0101 Power Operational Amplifier General Description Features The LH0101 is a wideband power operational amplifier fea­ turing F E T inputs, internal compensation, virtually no cross­ over distortion, and rapid settling time. These features make

Contextual Info: DS 1250Y/AB DALLAS DS1250Y/AB 4096K Nonvolatile SRAM SEMICONDUCTOR PIN ASSIGNMENT FEATURES • 10 years minimum data retention in the absence of external power Vcc A15 • Data is automatically protected during power loss A17 • Directly replaces 512K x 8 volatile static RAM

34-pin

Abstract: 32-PIN DS1250 DS1250AB DS1250Y
Contextual Info: DS1250Y/AB DS1250Y/AB 4096K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A18 1 32 VCC A16 2 31 A15 A14 3 30 A17 A12 4 29 WE A7 5 28 A13 • Low-power CMOS A6 6 27 A8 • Read and write access times as fast as 70 ns

32-PIN

Abstract: 34-PIN DS1250 DS1250AB DS1250Y al229
Contextual Info: D S 1250Y /A B DALLAS DS1250Y/AB 4096K Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power Vcc • Data is automatically protected during power loss A15 A17 • Directly replaces 512K x 8 volatile static RAM

Contextual Info: DS1250Y/AB DS1250Y/AB 4096K Nonvolatile SRAM DALLAS SEMICONDUCTOR PIN ASSIGNMENT FEATURES • 10 years minimum data retention in the absence of external power Vcc A15 • Data is automatically protected during power loss A17 • Directly replaces 512K x 8 volatile static RAM

32-PIN

Abstract: DS1245 DS1245AB DS1245AB-70 DS1245Y DS1245Y-70 DS1245Y-85
Contextual Info: DS1245Y/AB DS1245Y/AB 1024K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power NC 1 32 VCC A16 2 31 A15 A14 3 30 NC A12 4 29 WE A7 5 28 A13 A6 6 27 A8 • Low-power CMOS A5 7 26 A9 • Read and write access times as fast as 70 ns

DS1245V

Contextual Info: DS 1245Y/A B DALLAS DS1245Y/AB 1024K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss NC 1 1 A16 A14 • DIP-package devices directly replace 128K x 8 vola­

DALLAS SEMICONDUCTOR Ds1230

Abstract: dallas ds1230 EEPROM 28256 1230Y 34-PIN DS1230 DS1230AB DS1230Y CI 0740 LV 2.8 DS1230Y-150 DALLAS
Contextual Info: DS 1230Y/A B DALLAS DS1230Y/AB SEM ICON DUCTOR FEATURES 256K Nonvolatile SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 I1 1 • Data is automatically protected during power loss A12 I1 A7 I1 A6 I1 A5 I1 A4 I1

28256 eeprom

Abstract: DALLAS SEMICONDUCTOR Ds1230 EEPROM 28256 dallas ds1230 a7 surface mount diode DS1230Y-200 DALLAS DS1230Y-70 DS1230Y-85 DQ213 DS1230AB
Contextual Info: DS1230Y/AB DS1230Y/AB 256K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • DIP-package devices directly replace 32K x 8 volatile static RAM or EEPROM

DS1245V

Abstract: 32-PIN 34-PIN DS1245 DS1245AB DS1245Y DS1243AB-100
Contextual Info: D S 1245Y /A B DALLAS s e m ic o n d u c t o r DS1245Y/AB 1024K Nonvolatile SRAM FEATURES PIN ASSIGNM ENT * 1 0 years minimum data retention in the absence of external power 1 1 NC A16 • Data is automatically protected during power loss Í A14 • Dl P-package devices directly replace 128K x 8 vola­

1230Y

Contextual Info: D S 1230Y/A B DALLAS DS1230Y/AB 256K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 I1 1 • Data is automatically protected during power loss A12 I A7 I A6 I • Dl P-package devices directly replace 32K x 8 volatile