ROBINSON NUGENT 2.0 MM Search Results
ROBINSON NUGENT 2.0 MM Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Robinson 2mm Headers /Musent — 2mm Headers, Dual Row P2 Series * * * 9 * * * * High temp, surface mount compatible 2mm pin-to-pin and row-to-row spacing Vertical or right angle through hole product Right angle insulator design with ribs stabilizes connector on PCB |
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OL-m 94V-0
Abstract: Robinson Nugent SM 945
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Contextual Info: DIMMPAK Robinson Nuaent — How to Order 8 Byte DIMM Sockets DIMS Series 5.0 volts Synch DRAM DIMS — 168 B SD 5 — TR Product S eries:. -Voltage Option 5 = 5.0 Volts Assembly Configuration: B = Single Row j£ 7 | RN DIMMPAK Plating Code: Specify TR |
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MO-161 E73746 | |
LA 7693
Abstract: lm 7933 lm 3178 SO 607 mh 4S72 LM 2741 LM 7493 pa 3029 b Robinson Nugent s2 Lm 304 PN
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PAK-50 7-12mm) P50L-XXXP-A-TGF P50L-XXXS-A-T LA 7693 lm 7933 lm 3178 SO 607 mh 4S72 LM 2741 LM 7493 pa 3029 b Robinson Nugent s2 Lm 304 PN | |
Contextual Info: HIGH DENSITY Dual Read Out DIMM Sockets i DIMS Series Superior shock and vibration performance User friendly ejector system for easy module removal High temp material compatible with IR processes How to Order DIMS Series DIMS — XXX — A 5 — R 1 — TR |
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Contextual Info: HIGH DENSITY Dual Read Out DIMM Sockets ^ 2^7 DIMS Series, .300" 9 Effectively provides double density pack aging in single density footprint 9 Durability - 60 cycles minimum RN DIMMPAK 9 Vertical entry allows insertion/removal without disturbing “neighboring DIMMs” |
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Contextual Info: DIMMPAK Mugent -VRAM DIMM Socket * Effectively provides double density packaging * Superior shock and vibration performance * User friendly ejector system for easy module removal High temp material compatible with IR processes |
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MO-172 | |
Contextual Info: VRAM DIMM Socket * Effectively provides double density packaging * Superior shock and vibration performance * User friendly ejector system for easy module removal * High temp material compatible with IR processes * Positive locking of DIMM to socket * Supports JEDEC MO-172 |
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MO-172 MIL-STD-1344. | |
LH0101 equivalentContextual Info: LH0101 3 3 N a t i o n a l mm Semiconductor LH0101 Power Operational Amplifier General Description Features The LH0101 Is a wideband power operational amplifier fea turing FET inputs, Internal compensation, virtually no cross over distortion, and rapid settling time. These features make |
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LH0101 LH0101 LH0101 equivalent | |
Contextual Info: HIGH DENSITY ^ 7_ Dual Read Out DIMM Sockets DIMS Series 9 Superior shock and vibration performani 9 User friendly ejector system for easy module removal 9 High temp material compatible with IR processes How to Order DIMS Series DIMS — XXX — A 5 — R 1 — TR |
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Contextual Info: HIGH DENSITY Dual Read Out DIMM Sockets 4 DIMS Series 9 Superior shock and vibration performance • User friendly ejector system for easy module removal * High temp material compatible with IR processes How to Order DIMS Series DIMS — XXX — A 5 — R 1 — TR |
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Contextual Info: 50 Mil Connectors N u gen t-With Power Ground Pin P50 Series * 20-100 position product * 2 amps/power ground pin Low insertion/withdrawal force * Redundant ribbon contact design insures high normal force, facilitates easy mateability and eliminates pin |
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Contextual Info: HIGH DENSITY 4 Byte — 8 Byte DIMM Sockets 100 position • Provides 4-byte support for 32-bit applications 112 positon MO-172 9 Supports video RAM applications 168 position MO-161 9 Offers all voltage and application keys supported by JED EC 9 Provides 8-byte support for 64-bit |
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32-bit MO-172 MO-161 64-bit MIL-STD-1344. | |
Contextual Info: tß February 1995 Semiconductor LH0101 Power Operational Amplifier General Description Features The LH0101 is a wideband power operational amplifier fea turing F E T inputs, internal compensation, virtually no cross over distortion, and rapid settling time. These features make |
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LH0101 bS011E4 | |
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Contextual Info: DS 1250Y/AB DALLAS DS1250Y/AB 4096K Nonvolatile SRAM SEMICONDUCTOR PIN ASSIGNMENT FEATURES • 10 years minimum data retention in the absence of external power Vcc A15 • Data is automatically protected during power loss A17 • Directly replaces 512K x 8 volatile static RAM |
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1250Y/AB DS1250Y/AB 4096K DS1250Y) DS1250AB) 32-pin packa10 DD13S12 DS1250Y/A | |
34-pin
Abstract: 32-PIN DS1250 DS1250AB DS1250Y
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DS1250Y/AB 4096K DS1250AB) DS1250Y/AB 34-PIN DS34PIN 32-PIN DS1250 DS1250AB DS1250Y | |
32-PIN
Abstract: 34-PIN DS1250 DS1250AB DS1250Y al229
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DS1250Y/AB 4096K DS1250Y) DS1250AB) 32-pin DS1250Y/AB 34-PIN 68-pin DS1250 DS1250AB DS1250Y al229 | |
Contextual Info: DS1250Y/AB DS1250Y/AB 4096K Nonvolatile SRAM DALLAS SEMICONDUCTOR PIN ASSIGNMENT FEATURES • 10 years minimum data retention in the absence of external power Vcc A15 • Data is automatically protected during power loss A17 • Directly replaces 512K x 8 volatile static RAM |
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DS1250Y/AB DS1250Y) DS1250AB) 32-pin 68-pin DS1250Y/AB DS12S0Y/AB 34-PIN | |
32-PIN
Abstract: DS1245 DS1245AB DS1245AB-70 DS1245Y DS1245Y-70 DS1245Y-85
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DS1245Y/AB 1024K DS1245YL/ABL 34-PIN DS34PIN 32-PIN DS1245 DS1245AB DS1245AB-70 DS1245Y DS1245Y-70 DS1245Y-85 | |
DS1245VContextual Info: DS 1245Y/A B DALLAS DS1245Y/AB 1024K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss NC 1 1 A16 A14 • DIP-package devices directly replace 128K x 8 vola |
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1245Y/A 1024K DS1245Y/AB DS1245Y) Hbl413D DS1245YL/ABL 34-PIN 68-pin 34P-SM DS1245V | |
DALLAS SEMICONDUCTOR Ds1230
Abstract: dallas ds1230 EEPROM 28256 1230Y 34-PIN DS1230 DS1230AB DS1230Y CI 0740 LV 2.8 DS1230Y-150 DALLAS
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DS1230 DS1230Y/AB DS1230Y) DS1230AB) 28-pin 2bl4130 DS1230YL/ABL 34-PIN 68-pin DALLAS SEMICONDUCTOR Ds1230 dallas ds1230 EEPROM 28256 1230Y DS1230AB DS1230Y CI 0740 LV 2.8 DS1230Y-150 DALLAS | |
28256 eeprom
Abstract: DALLAS SEMICONDUCTOR Ds1230 EEPROM 28256 dallas ds1230 a7 surface mount diode DS1230Y-200 DALLAS DS1230Y-70 DS1230Y-85 DQ213 DS1230AB
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DS1230Y/AB DS1230YL/ABL DS34PIN 28256 eeprom DALLAS SEMICONDUCTOR Ds1230 EEPROM 28256 dallas ds1230 a7 surface mount diode DS1230Y-200 DALLAS DS1230Y-70 DS1230Y-85 DQ213 DS1230AB | |
DS1245V
Abstract: 32-PIN 34-PIN DS1245 DS1245AB DS1245Y DS1243AB-100
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DS1245Y/AB 1024K DS1245Y) DS1245AB) 32-pin 2blH13D DS1245YL/ABL 34-PIN DS1245V DS1245 DS1245AB DS1245Y DS1243AB-100 | |
1230YContextual Info: D S 1230Y/A B DALLAS DS1230Y/AB 256K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 I1 1 • Data is automatically protected during power loss A12 I A7 I A6 I • Dl P-package devices directly replace 32K x 8 volatile |
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1230Y/A DS1230Y/AB DS1230Y) DS1230AB) 2bl4130 013S3t S1230Y/AB DS1230YL/ABL 34-PIN DS34P 1230Y |