RO4350B DATA SHEET Search Results

RO4350B

Abstract: RO4350 Thermagon Rogers RO4350B 62NCLR-A Solder Paste, Indium 5.1, Type 3 RO4350 properties pcb fabrication process of multilayer pcb pcb layout computer motherboard
Contextual Info: AMMP-6408 Thermal Application Examples Application Note 5351 Introduction Typical Application The AMMP-6408 is a 1 watt power amplifier operating over the 6 to 18 GHz frequency range and is housed in a 5 x 5 mm surface mount package. The AMMP-6408 is the packaged version of Avago’s AMMC-6408 PHEMT MMIC.

Rogers RO4350B

Abstract: RO4350B ROGERS GRM155R71E103KA01 25C2625 GRM1555C1H181JZ01
Contextual Info: Document Number: MML09212H Rev. 1, 4/2013 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E−pHEMT MML09212HT1 Low Noise Amplifier The MML09212H is a 2−stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed

Contextual Info: Document Number: MML09212H Rev. 0, 10/2012 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MML09212HT1 Low Noise Amplifier The MML09212H is a 2-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed

RO4350B

Abstract: Rogers RO4350B microstrip RC0402FR-07-910RL YAGEO CHIP Capacitors MARKING GRM1555C1H221JZ01 ERJ2GE0R00X marking us capacitor pf l1 GRM1555C1H560JZ01 RC0402JR yageo GRM1555C1H181JZ01
Contextual Info: Freescale Semiconductor Technical Data Document Number: MML09212H Rev. 0, 10/2012 Enhancement Mode pHEMT Technology E-pHEMT MML09212HT1 Low Noise Amplifier The MML09212H is a 2-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed

GJM1555C1H180GB01

Abstract: GRM1555C1H180JA01 C11 inductor RC0402FR-07-1K2RL RO4350B Rogers RO4350B microstrip phemt .s2p 25c2625
Contextual Info: Document Number: MML20242H Rev. 1, 4/2013 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E−pHEMT MML20242HT1 Low Noise Amplifier The MML20242H is a 2−stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed

MG271H

Abstract: marking s22 GRM1555C1H1R0BA01 mmic C5 sot 86 GRM1555C1H1R2BA01 GRM1555C1H1R8BA01
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG20271H9 Rev. 0, 12/2011 Enhancement Mode pHEMT Technology E-pHEMT MMG20271H9T1 High Linearity Amplifier The MMG20271H9 is a high dynamic range, single-stage, low noise amplifier MMIC, housed in a SOT-89 standard plastic package. With high OIP3 and low

Contextual Info: Document Number: MMG20271H9 Rev. 0, 12/2011 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MMG20271H9T1 High Linearity Amplifier The MMG20271H9 is a high dynamic range, single-stage, low noise amplifier MMIC, housed in a SOT-89 standard plastic package. With high OIP3 and low

MML20242H

Abstract: RO4350B Rogers RO4350B microstrip
Contextual Info: Freescale Semiconductor Technical Data Document Number: MML20242H Rev. 0, 10/2012 Enhancement Mode pHEMT Technology E-pHEMT MML20242HT1 Low Noise Amplifier The MML20242H is a 2-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed

Contextual Info: Document Number: MML20242H Rev. 0, 10/2012 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MML20242HT1 Low Noise Amplifier The MML20242H is a 2-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed

MGA-61563

Abstract: Rogers 4350B RO4350B microstripline Rogers RO4350B microstrip 4350B
Contextual Info: MGA-61563 High Performance GaAs MMIC Amplifier Application Note 5012 Application Information The MGA-61563 is a high performance GaAs MMIC amplifier fabricated with Avago Technologies’ EpHEMT process and is targeted for commercial wireless application from 100 MHz to 6 GHz. The MGA-61563

B7HF200

Contextual Info: BGT24MR2 Silicon Germanium 24 GHz Twin IQ Receiver MMIC Data Sheet Revision 3.1, 2014-03-25 RF & Protection Devices Edition 2014-03-25 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

B7HF200

Contextual Info: BGT24MR2 Silicon Germanium 24 GHz Twin IQ Receiver MMIC Data Sheet Revision 3.0, 2013-07-08 RF & Protection Devices Edition 2013-07-08 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

RO4350B ROGERS 0.01

Contextual Info: 05.21.2010 DATA SHEET QFAXX0XSMTF FEATURES APPLICATIONS • 36 – 50 GHz • Surface Mount for Pick and Place Assembly • 1206 Small Footprint • RoHS Compliant Versions • Available on Tape & Reel • Same Footprint, Temperature Variable Versions Available

RO4403

Abstract: Rogers RO4003 rt/duroid 5880 RO4450F rogers 5880 RO3006 RO4350B rogers laminate materials RO4450B RO3210
Contextual Info: Ordering Information: Standard Thickness, Tolerance and Panel Size Rogers’ high frequency laminates can be purchased by contacting a Rogers Customer Service Representative at 480 961-1382 or one of our international offices listed below. To ensure that you receive the material for your application, please include order information for each of the

Contextual Info: BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC Data Sheet Revision 3.2, 2014-07-15 RF & Protection Devices Edition 2014-07-15 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

Contextual Info: BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC Data Sheet Revision 3.0, 2013-07-08 RF & Protection Devices Edition 2013-07-08 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

MGA-62563

Abstract: microstripline FR4 RO4350B 4350B 62563 62563 amplifier MGA-6x563 Rogers 4350B LL1608-FS47NJ LL1608-FS4N7S
Contextual Info: MGA-62563 High Performance GaAs MMIC Amplifier Application Note 5011 Application Information The MGA-62563 is a high performance GaAs MMIC amplifier fabricated with Avago Technologies E-pHEMT process and is targeted for commercial wireless application from 100 MHz to 3 GHz. The MGA-62563

Contextual Info: QTVAXX0NXXXSMTF DATA SHEET REV 07/28/2010 FEATURES APPLICATIONS • 36 – 50 GHz • Surface Mount for Pick and Place Assembly • 1206 Small Footprint • RoHS Compliant Versions • Available on Tape & Reel • Same Footprint, Fixed Versions Available • Point to Point Radios

Rogers RO4350B

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMZ25333B Rev. 1, 8/2014 2 W High Gain Power Amplifier for Cellular Infrastructure InGaP GaAs HBT The MMZ25333B is a versatile 3-stage power amplifier targeted at driver and pre-driver applications for macro and micro base stations and final-stage

Contextual Info: BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC Data Sheet Revision 3.1, 2014-03-25 RF & Protection Devices Edition 2014-03-25 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

MTL ICC 317

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMZ25333B Rev. 0, 6/2014 2 W High Gain Power Amplifier for Cellular Infrastructure InGaP GaAs HBT The MMZ25333B is a versatile 3-stage power amplifier targeted at driver and pre-driver applications for macro and micro base stations and final-stage

Contextual Info: BGT24MTR11 Silicon Germanium 24 GHz Transceiver MMIC Data Sheet Revision 3.0, 2013-07-08 RF & Protection Devices Edition 2013-07-08 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

Contextual Info: BGT24MTR11 Silicon Germanium 24 GHz Transceiver MMIC Data Sheet Revision 3.1, 2014-03-25 RF & Protection Devices Edition 2014-03-25 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

Contextual Info: Evaluation Board Document o Description o Assembly Drawing Description: The uPG2417T6M-EVAL-A evaluation board provides a quick and convenient means of evaluating the performance of the Renesas uPG2417T6M switch. In addition to the device, the board provides DC block capacitors, power supply bypass capacitors, and RF and DC