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    RN30 Search Results

    RN30 Datasheets (8)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    RN300-100
    Unknown Shortform Power Data Book Short Form PDF 54.13KB 1
    RN-300-2
    Essentra Components Catalog Card Guides, Boxes, Enclosures, Racks, CARD GUIDE NARROW NAT 3" Original PDF 1
    RN3010
    Amplifonix RF AMPLIFIER Original PDF 142.41KB 1
    RN3020
    Unknown Discontinued Transistor Data Book 1975 Scan PDF 216.96KB 2
    RN3020R
    Unknown Discontinued Transistor Data Book 1975 Scan PDF 216.96KB 2
    RN3030
    Unknown Discontinued Transistor Data Book 1975 Scan PDF 216.96KB 2
    RN3030R
    Unknown Discontinued Transistor Data Book 1975 Scan PDF 216.96KB 2
    RN3034B80W
    Philips Semiconductors NPN silicon planar epitaxial microwave power transistor Scan PDF 179.72KB 3
    SF Impression Pixel

    RN30 Price and Stock

    Bourns Inc

    Bourns Inc SRN3015C-3R3M

    IND,3X3X1.3MM,3.3UH20%,2.2A,SHD
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    SRN3015C-3R3M Cut Tape 12,642 1
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    SRN3015C-3R3M Reel 12,000 2,000
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    Mouser Electronics SRN3015C-3R3M 23,938
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    Avnet Abacus SRN3015C-3R3M Reel 13 Weeks 2,000
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    Bourns Inc SRN3015TA-2R2M

    FIXED IND 2.2UH 1.7A 60 MOHM SMD
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    SRN3015TA-2R2M Digi-Reel 11,245 1
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    SRN3015TA-2R2M Reel 10,000 2,000
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    Avnet Americas SRN3015TA-2R2M Reel 8,000 12 Weeks 2,000
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    Avnet Abacus SRN3015TA-2R2M Reel 13 Weeks 2,000
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    Chip Stock SRN3015TA-2R2M 2,825
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    IBS Electronics SRN3015TA-2R2M 4,000 2,000
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    Master Electronics SRN3015TA-2R2M 4,000
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    Bourns Inc SRN3012BTA-5R6M

    FIXED IND 5.6UH 1.9A 0.24OHM SMD
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    DigiKey () SRN3012BTA-5R6M Digi-Reel 2,261 1
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    SRN3012BTA-5R6M Cut Tape 2,261 1
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    Avnet Americas SRN3012BTA-5R6M Reel 12 Weeks 3,000
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    Bourns Inc SRN3015BTA-R68M

    FIXED IND 680NH 3.5A 0.028OHM SM
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    Bourns Inc SRN3015C-R24M

    IND,3X3X1.3MM,0.24UH20%,5A,SHD
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    DigiKey () SRN3015C-R24M Digi-Reel 1,968 1
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    SRN3015C-R24M Cut Tape 1,968 1
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    Avnet Abacus SRN3015C-R24M Reel 13 Weeks 2,000
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    RN30 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TR3093

    Abstract: SM19
    Contextual Info: RF AMPLIFIER MODEL TR3093 Available as: TR3093, 4 Pin TO-8B T8 RN3093, 4 Pin Surface Mount (SM19) BR3093, Connectorized Housing (H2) Features Typical Intermodulation Performance at 25 º C ! Higher Output Power: 1 Watt Typical ! Operating Temp. - 55 ºC to +85 ºC


    Original
    TR3093 TR3093, RN3093, BR3093, TR3093 SM19 PDF

    Contextual Info: RN3030R Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)15 V(BR)GSS (V) I(D) Max. (A) I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC)


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    RN3030R PDF

    Contextual Info: RN3004 / RN3004 Amplifier Performance Datasheet Cross Reference Guide RN3004 / RN3004* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 225.0 - 400.0 MHz Gain 22.8 dB Typical 22.0 dB Min Noise Figure 1.8 dB Typical


    Original
    RN3004 SRN3004* PDF

    BX3010

    Abstract: RN3010 SM19 TR3010
    Contextual Info: RF AMPLIFIER MODEL Available as: TR3010, 4 Pin TO-8B T8 RN3010, 4 Pin Surface Mount (SM19) BX3010, Connectorized Housing (H2) Features Typical Intermodulation Performance at 25 º C ! ! ! ! Environmental Screening Available Second Order Harmonic Intercept Point . +


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    TR3010, RN3010, BX3010, TRC431 BX3010 RN3010 SM19 TR3010 PDF

    TR3070

    Abstract: BR307 SM19 RN3070
    Contextual Info: RF AMPLIFIER MODEL TR3070 Available as: TR3070, 4 Pin TO-8B T8 RN3070, 4 Pin Surface Mount (SM19) BR3070, Connectorized Housing (H2) Features Typical Intermodulation Performance at 25 º C ! ! ! ! Second Order Harmonic Intercept Point . +51 dBm (Typ.)


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    TR3070 TR3070, RN3070, BR3070, TR3070 BR307 SM19 RN3070 PDF

    TR3054

    Abstract: SM19
    Contextual Info: RF AMPLIFIER MODEL TR3054 Available as: Typical Intermodulation Performance at 25 º C Features ! ! ! ! TR3054, 4 Pin TO-8B T8 RN3054, 4 Pin Surface Mount (SM19) BR3054, Connectorized Housing (H2) Second Order Harmonic Intercept Point.+35 dBm (Typ.)


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    TR3054 TR3054, RN3054, BR3054, TR3054 SM19 PDF

    Contextual Info: Available as: RF AMPLIFIER MODEL TR3029 TR3029, 4 Pin TO-8 T4 RN3029, 10 Lead Gull-Wing (SG4) BR3029, Connectorized Housing (H2) Features Typical Intermodulation Performance at 250 C • ■ ■ ■ Second Order Harmonic Intercept Point +46 (Min.) Second Order Two Tone Intercept Point


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    TR3029 TR3029, RN3029, BR3029, PDF

    Contextual Info: RF AMPLIFIER MODEL TR3093 Available as: TR3093, 4 Pin TO-8B T8 RN3093, 4 Pin Surface Mount (SM19) BR3093, Connectorized Housing (H2) Features Typical Intermodulation Performance at 25 º C  Higher Output Power: 1 Watt Typical  Operating Temp. - 55 ºC to +85 ºC


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    TR3093 TR3093, RN3093, BR3093, PDF

    low noise

    Abstract: TR3044 transistor oc 76 150-1 SM19
    Contextual Info: RF AMPLIFIER MODEL TR3044 Available as: TR3044, 4 Pin TO-8B T8 RN3044, 4 Pin Surface Mount (SM19) BR3044, Connectorized Housing (H2) Features Typical Intermodulation Performance at 25 º C ! ! ! ! Second Order Harmonic Intercept Point . +51 dBm (Typ.)


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    TR3044 TR3044, RN3044, BR3044, low noise TR3044 transistor oc 76 150-1 SM19 PDF

    TR3020

    Abstract: RN3020 SM19 BR3020
    Contextual Info: RF AMPLIFIER MODEL TR3020 Available as: TR3020, 4 Pin TO-8B T8 RN3020, Surface Mount (SM19) BR3020, Connectorized Housings (H2) Features Typical Intermodulation Performance at 25 º C ! ! ! ! Second Order Harmonic Intercept Point . +45 dBm (Typ.) Second Order Two Tone Intercept Point . +42 dBm (Typ.)


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    TR3020 TR3020, RN3020, BR3020, TR3020 RN3020 SM19 BR3020 PDF

    Contextual Info: Cross Reference Guide RN3010 / RN3010* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 5.0 - 500.0 MHz Gain 30.0 dB Typical 28.0 dB Min Noise Figure 3.5 dB Typical 5.0 dB Max P1dB 21.5 dBm Typical 20.0 dBm Min


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    RN3010 SRN3010* PDF

    Contextual Info: RN3045 / RN3045 Amplifier Performance Datasheet Cross Reference Guide RN3045 / RN3045* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 5.0 - 125.0 MHz Gain 15.0 dB Typical 14.0 dB Min Noise Figure 2.0 dB Typical


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    RN3045 SRN3045* PDF

    Contextual Info: RN3039 / RN3039 Amplifier Performance Datasheet Cross Reference Guide RN3039 / RN3039* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 100.0 - 220.0 MHz Gain 18.0 dB Typical 17.5 dB Min Noise Figure 2.5 dB Typical


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    RN3039 SRN3039* PDF

    Contextual Info: RN3030 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)15 V(BR)GSS (V) I(D) Max. (A) I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC)


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    RN3030 PDF

    Contextual Info: RF AMPLIFIER MODEL TR3070 Available as: TR3070, 4 Pin TO-8B T8 RN3070, 4 Pin Surface Mount (SM19) BR3070, Connectorized Housing (H2) Features Typical Intermodulation Performance at 25 º C ! ! ! ! Second Order Harmonic Intercept Point . +51 dBm (Typ.)


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    TR3070 TR3070, RN3070, BR3070, PDF

    RN3034B80W

    Contextual Info: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor RN3034B80W FEATURES QUICK REFERENCE DATA • Suitable for short and medium pulse application up to 100 |j.s pulse width, 10% duty factor. Microwave performance up to Tmb = 25 °C in a common base class C


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    RN3034B80W 711DflEb RN3034B80W PDF

    Contextual Info: RN3005 / RN3005 Amplifier Performance Datasheet Cross Reference Guide RN3005 / RN3005* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 100.0 - 450.0 MHz Gain 16.0 dB Typical 14.5 dB Min Noise Figure 1.8 dB Typical


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    RN3005 SRN3005* PDF

    MAX232 G4

    Abstract: IC404 IC808 ic401 diode C728 diode c729 transistor C721 IC818 ic811 C729
    Contextual Info: MPC555 Evaluation Board Schematics A B C D VCC3_3 1 2 3 4 5 6 7 8 9 10 R101 4K75 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 VCC5 VCC3_3 CLKOUT B_CNTX0 B_CNRX0 1 6 2 7 3 8 4 9 5 TP102 TP103 CB100 100n /SRESET /PORESET A_CNTX0 A_CNRX0 TP100 TP101 SUBD9


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    MPC555 TP102 TP103 CB100 TP100 TP101 CO101 MAX232-6 MAX232-2 MAX232-13 MAX232 G4 IC404 IC808 ic401 diode C728 diode c729 transistor C721 IC818 ic811 C729 PDF

    OSC4/SM

    Abstract: MDLS-20265 OPTREX C-51505 MDLS-24265 short stop 12v p18 30a rs232 converter dmx Mosfet J49 LCM-S01602 lcm-s02402 Vishay SOT23 MARKING F5
    Contextual Info: LatticeXP2 Advanced Evaluation Board User’s Guide January 2009 Revision: EB30_01.3 LatticeXP2 Advanced Evaluation Board User’s Guide Lattice Semiconductor Introduction The LatticeXP2 Advanced Evaluation Board provides a convenient platform to evaluate, test and debug user


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    LatticeXP2-17 24-6R8 OSC4/SM MDLS-20265 OPTREX C-51505 MDLS-24265 short stop 12v p18 30a rs232 converter dmx Mosfet J49 LCM-S01602 lcm-s02402 Vishay SOT23 MARKING F5 PDF

    TR3069

    Abstract: TR306 to8b SM19
    Contextual Info: RF AMPLIFIER MODEL TR3069 Available as: Features Typical Intermodulation Performance at 25 º C ! ! ! ! Second Order Harmonic Intercept Point . +46 dBm Typ. Second Order Two Tone Intercept Point . +41 dBm (Typ.) Third Order Two Tone Intercept Point . +31 dBm (Typ.)


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    TR3069 TR3069, RN3069, BR3069, TR3069 TR306 to8b SM19 PDF

    RM250-100

    Abstract: TG150-50 RJ150-50 TT40-50 RE100-100 rf125-100 TC250-50 DM250P F1E6 TA150-50
    Contextual Info: Device D10P DM10P DM30P DM50P D100P DM100P DM 150 PA DM150PB DM250P 0912-70 0912-100 0912-200 CD2147 Device L7-28 LM25-28 LM150PX TABLE J Power Gain dB Coll. Eff. <Typ°o) Power Diss. (Watts) 10.0 10.0 30.0 50.0 100.0 100.0 140.0 140.0 280.0 70.0 100.0 200.0


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    DM10P DM30P DM50P D100P DM100P DM150PB DM250P CD2147 TA150-50 TB200-50 RM250-100 TG150-50 RJ150-50 TT40-50 RE100-100 rf125-100 TC250-50 F1E6 PDF

    BN301

    Abstract: ara3
    Contextual Info: C INTERFACE INC IDE D | 00233A3 0D0045M A | BN301 ^ Iam ey. T - W - U STANLEY INFRARED LED i Package Dimensions • FEATURES 1 High emission output (Typ. 7mW /sr at I f = 20m A ) (2) High directivity type (3) Low cost, High efficient by use o f clear epoxy package o f lens dia 5 mm


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    00233A3 0D0045M BN301 100ms T-41-11 BN301 ara3 PDF

    TIL78

    Abstract: til78 phototransistor L44A BFX82 K1504 MT101B P1028 phototransistor OCP71 transistor k1502
    Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


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    PDF

    P1027

    Abstract: 2N3379 P1069E SD5011 UC-41 2N4088 K1502 RN1030 1203 6d ML111B
    Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


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    NPN110. FT4020 FT4021 FT4022 BVCEO-45V ICBO-10nA BVCEO-60V P1027 2N3379 P1069E SD5011 UC-41 2N4088 K1502 RN1030 1203 6d ML111B PDF