RN30 Search Results

TR3093

Abstract: SM19
Contextual Info: RF AMPLIFIER MODEL TR3093 Available as: TR3093, 4 Pin TO-8B T8 RN3093, 4 Pin Surface Mount (SM19) BR3093, Connectorized Housing (H2) Features Typical Intermodulation Performance at 25 º C ! Higher Output Power: 1 Watt Typical ! Operating Temp. - 55 ºC to +85 ºC

Contextual Info: RN3030R Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)15 V(BR)GSS (V) I(D) Max. (A) I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC)

Contextual Info: RN3004 / RN3004 Amplifier Performance Datasheet Cross Reference Guide RN3004 / RN3004* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 225.0 - 400.0 MHz Gain 22.8 dB Typical 22.0 dB Min Noise Figure 1.8 dB Typical

BX3010

Abstract: RN3010 SM19 TR3010
Contextual Info: RF AMPLIFIER MODEL Available as: TR3010, 4 Pin TO-8B T8 RN3010, 4 Pin Surface Mount (SM19) BX3010, Connectorized Housing (H2) Features Typical Intermodulation Performance at 25 º C ! ! ! ! Environmental Screening Available Second Order Harmonic Intercept Point . +

TR3070

Abstract: BR307 SM19 RN3070
Contextual Info: RF AMPLIFIER MODEL TR3070 Available as: TR3070, 4 Pin TO-8B T8 RN3070, 4 Pin Surface Mount (SM19) BR3070, Connectorized Housing (H2) Features Typical Intermodulation Performance at 25 º C ! ! ! ! Second Order Harmonic Intercept Point . +51 dBm (Typ.)

TR3054

Abstract: SM19
Contextual Info: RF AMPLIFIER MODEL TR3054 Available as: Typical Intermodulation Performance at 25 º C Features ! ! ! ! TR3054, 4 Pin TO-8B T8 RN3054, 4 Pin Surface Mount (SM19) BR3054, Connectorized Housing (H2) Second Order Harmonic Intercept Point.+35 dBm (Typ.)

Contextual Info: Available as: RF AMPLIFIER MODEL TR3029 TR3029, 4 Pin TO-8 T4 RN3029, 10 Lead Gull-Wing (SG4) BR3029, Connectorized Housing (H2) Features Typical Intermodulation Performance at 250 C • ■ ■ ■ Second Order Harmonic Intercept Point +46 (Min.) Second Order Two Tone Intercept Point

Contextual Info: RF AMPLIFIER MODEL TR3093 Available as: TR3093, 4 Pin TO-8B T8 RN3093, 4 Pin Surface Mount (SM19) BR3093, Connectorized Housing (H2) Features Typical Intermodulation Performance at 25 º C  Higher Output Power: 1 Watt Typical  Operating Temp. - 55 ºC to +85 ºC

low noise

Abstract: TR3044 transistor oc 76 150-1 SM19
Contextual Info: RF AMPLIFIER MODEL TR3044 Available as: TR3044, 4 Pin TO-8B T8 RN3044, 4 Pin Surface Mount (SM19) BR3044, Connectorized Housing (H2) Features Typical Intermodulation Performance at 25 º C ! ! ! ! Second Order Harmonic Intercept Point . +51 dBm (Typ.)

TR3020

Abstract: RN3020 SM19 BR3020
Contextual Info: RF AMPLIFIER MODEL TR3020 Available as: TR3020, 4 Pin TO-8B T8 RN3020, Surface Mount (SM19) BR3020, Connectorized Housings (H2) Features Typical Intermodulation Performance at 25 º C ! ! ! ! Second Order Harmonic Intercept Point . +45 dBm (Typ.) Second Order Two Tone Intercept Point . +42 dBm (Typ.)

Contextual Info: Cross Reference Guide RN3010 / RN3010* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 5.0 - 500.0 MHz Gain 30.0 dB Typical 28.0 dB Min Noise Figure 3.5 dB Typical 5.0 dB Max P1dB 21.5 dBm Typical 20.0 dBm Min

Contextual Info: RN3045 / RN3045 Amplifier Performance Datasheet Cross Reference Guide RN3045 / RN3045* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 5.0 - 125.0 MHz Gain 15.0 dB Typical 14.0 dB Min Noise Figure 2.0 dB Typical

Contextual Info: RN3039 / RN3039 Amplifier Performance Datasheet Cross Reference Guide RN3039 / RN3039* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 100.0 - 220.0 MHz Gain 18.0 dB Typical 17.5 dB Min Noise Figure 2.5 dB Typical

Contextual Info: RN3030 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)15 V(BR)GSS (V) I(D) Max. (A) I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC)

Contextual Info: RF AMPLIFIER MODEL TR3070 Available as: TR3070, 4 Pin TO-8B T8 RN3070, 4 Pin Surface Mount (SM19) BR3070, Connectorized Housing (H2) Features Typical Intermodulation Performance at 25 º C ! ! ! ! Second Order Harmonic Intercept Point . +51 dBm (Typ.)

RN3034B80W

Contextual Info: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor RN3034B80W FEATURES QUICK REFERENCE DATA • Suitable for short and medium pulse application up to 100 |j.s pulse width, 10% duty factor. Microwave performance up to Tmb = 25 °C in a common base class C

Contextual Info: RN3005 / RN3005 Amplifier Performance Datasheet Cross Reference Guide RN3005 / RN3005* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 100.0 - 450.0 MHz Gain 16.0 dB Typical 14.5 dB Min Noise Figure 1.8 dB Typical

MAX232 G4

Abstract: IC404 IC808 ic401 diode C728 diode c729 transistor C721 IC818 ic811 C729
Contextual Info: MPC555 Evaluation Board Schematics A B C D VCC3_3 1 2 3 4 5 6 7 8 9 10 R101 4K75 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 VCC5 VCC3_3 CLKOUT B_CNTX0 B_CNRX0 1 6 2 7 3 8 4 9 5 TP102 TP103 CB100 100n /SRESET /PORESET A_CNTX0 A_CNRX0 TP100 TP101 SUBD9

OSC4/SM

Abstract: MDLS-20265 OPTREX C-51505 MDLS-24265 short stop 12v p18 30a rs232 converter dmx Mosfet J49 LCM-S01602 lcm-s02402 Vishay SOT23 MARKING F5
Contextual Info: LatticeXP2 Advanced Evaluation Board User’s Guide January 2009 Revision: EB30_01.3 LatticeXP2 Advanced Evaluation Board User’s Guide Lattice Semiconductor Introduction The LatticeXP2 Advanced Evaluation Board provides a convenient platform to evaluate, test and debug user

TR3069

Abstract: TR306 to8b SM19
Contextual Info: RF AMPLIFIER MODEL TR3069 Available as: Features Typical Intermodulation Performance at 25 º C ! ! ! ! Second Order Harmonic Intercept Point . +46 dBm Typ. Second Order Two Tone Intercept Point . +41 dBm (Typ.) Third Order Two Tone Intercept Point . +31 dBm (Typ.)

RM250-100

Abstract: TG150-50 RJ150-50 TT40-50 RE100-100 rf125-100 TC250-50 DM250P F1E6 TA150-50
Contextual Info: Device D10P DM10P DM30P DM50P D100P DM100P DM 150 PA DM150PB DM250P 0912-70 0912-100 0912-200 CD2147 Device L7-28 LM25-28 LM150PX TABLE J Power Gain dB Coll. Eff. <Typ°o) Power Diss. (Watts) 10.0 10.0 30.0 50.0 100.0 100.0 140.0 140.0 280.0 70.0 100.0 200.0

BN301

Abstract: ara3
Contextual Info: C INTERFACE INC IDE D | 00233A3 0D0045M A | BN301 ^ Iam ey. T - W - U STANLEY INFRARED LED i Package Dimensions • FEATURES 1 High emission output (Typ. 7mW /sr at I f = 20m A ) (2) High directivity type (3) Low cost, High efficient by use o f clear epoxy package o f lens dia 5 mm

TIL78

Abstract: til78 phototransistor L44A BFX82 K1504 MT101B P1028 phototransistor OCP71 transistor k1502
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

P1027

Abstract: 2N3379 P1069E SD5011 UC-41 2N4088 K1502 RN1030 1203 6d ML111B
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I