RN2118MFV Search Results

RN1114MFV

Abstract: RN1118MFV RN2114 RN2114MFV RN2115MFV RN2116MFV RN2117MFV RN2118MFV
Contextual Info: RN2114MFV～RN2118MFV 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2114MFV,RN2115MFV,RN2116MFV RN2117MFV,RN2118MFV 単位 : mm R1 (kΩ) R2 (kΩ) RN2114MFV 1 10 RN2115MFV 2.2 10 RN2116MFV 4.7 10 RN2117MFV

RN1114MFV

Abstract: RN1118MFV RN2114MFV RN2115MFV RN2116MFV RN2117MFV RN2118MFV sat 1205
Contextual Info: RN2114MFV~RN2118MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2114MFV,RN2115MFV,RN2116MFV RN2117MFV,RN2118MFV Unit: mm z Complementary to RN1114MFV to RN1118MFV 1 2 0.32±0.05 3 0.13±0.05 z A wide range of resistor values is available for use in various circuits.

transistors bipolar

Contextual Info: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: RN2118MFV Category: Transistors /Bipolar Small-Signal Transistors/Bias Resistor Built-in Transistors Single

Contextual Info: RN2114MFV~RN2118MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2114MFV, RN2115MFV, RN2116MFV RN2117MFV, RN2118MFV Unit: mm z Complementary to RN1114MFV to RN1118MFV 1 2 0.32±0.05 3 0.13±0.05 z A wide range of resistor values is available for use in various circuits.

Contextual Info: RN2114MFV~RN2118MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2114MFV,RN2115MFV,RN2116MFV RN2117MFV,RN2118MFV Unit: mm Complementary to RN1114MFV to RN1118MFV 0.4 1 0.4 0.32±0.05 0.8±0.05 2 3 0.13±0.05 A wide range of resistor values is available for use in various circuits.

Contextual Info: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: RN1118MFV Category: Transistors /Bipolar Small-Signal Transistors/Bias Resistor Built-in Transistors Single

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

RN1117MFV

Abstract: RN1118MFV RN2114MFV RN2118MFV RN1114MFV RN1115MFV RN1116MFV
Contextual Info: RN1114MFV～RN1118MFV 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1114MFV, RN1115MFV, RN1116MFV, RN1117MFV, RN1118MFV ○ スイッチング用 ○ インバータ用 ○ インタフェース回路用

RN1114MFV

Abstract: RN1115MFV RN1116MFV RN1117MFV RN1118MFV RN2114MFV RN2118MFV
Contextual Info: RN1114MFV~RN1118MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1114MFV,RN1115MFV,RN1116MFV,RN1117MFV,RN1118MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm 1.2 ± 0.05

Contextual Info: RN1114MFV~RN1118MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1114MFV, RN1115MFV, RN1116MFV, RN1117MFV, RN1118MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm

GT45F122

Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

GT30J124

Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

Contextual Info: RN1114MFV~RN1118MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1114MFV,RN1115MFV,RN1116MFV,RN1117MFV,RN1118MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm 1.2 ± 0.05

*45F122

Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
Contextual Info: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

RN1114MFV

Abstract: RN1115MFV RN1116MFV RN1117MFV RN1118MFV RN2114MFV RN2118MFV
Contextual Info: RN1114MFV~RN1118MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1114MFV,RN1115MFV,RN1116MFV,RN1117MFV,RN1118MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm 1.2 ± 0.05