RN2106 Search Results
RN2106 Datasheets (22)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| RN2106 | Toshiba | PNP transistor | Original | 429.46KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2106 | Toshiba | Silicon PNP Epitaxial Type (PCT Process) Transistor | Original | 259.74KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2106 | Toshiba | Japanese - Transistors | Original | 851.07KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2106 | Toshiba | Transistors | Original | 581.67KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2106 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 93.91KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2106ACT | Toshiba | Japanese - Transistors | Original | 274.08KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2106ACT | Toshiba | Transistors | Original | 189.36KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2106ACT(TPL3) | Toshiba | Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRAN PNP CST3 50V 100A | Original | 8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2106CT | Toshiba | Transistors | Original | 188.15KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2106CT | Toshiba | Japanese - Transistors | Original | 294.02KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2106CT(TPL3) | Toshiba | Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRAN PNP CST3 -20V -50A | Original | 8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2106F | Toshiba | PNP transistor | Original | 557.12KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2106FS | Toshiba | Original | 186.82KB | 8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2106FT | Toshiba | Original | 65.45KB | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2106FV | Toshiba | Silicon PNP Epitaxial Transistor with Resistors | Original | 575.16KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2106,LF(CT | Toshiba America Electronic Components | TRANS PREBIAS PNP 50V 0.1A SSM | Original | 701.11KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2106,LXHF(CT | Toshiba America Electronic Components | AUTO AEC-Q TR PNP Q1BSR=4.7KOHM, | Original | 701.11KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2106MFV | Toshiba | Transistors | Original | 200.08KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2106MFV | Toshiba | Japanese - Transistors | Original | 278.9KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2106MFV,L3F(CT | Toshiba America Electronic Components | TRANS PREBIAS PNP 50V 0.1A VESM | Original | 831.56KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2106 Price and Stock
Toshiba America Electronic Components RN2106,LF(CBRN2106,LF(CB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RN2106,LF(CB | 2,580 | 1,429 |
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Buy Now | ||||||
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RN2106,LF(CB | 2,064 |
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Toshiba America Electronic Components RN2106MFV,L3F(CTSilicon PNP Epitaxial PCT Process Bias Resistor built-in Transistor |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RN2106MFV,L3F(CT | 2,000 | 100 |
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Buy Now | ||||||
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RN2106MFV,L3F(CT |
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RN2106MFV,L3F(CT | Tape & Reel | 42,590 | 100 |
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| RN2106MFV,L3F(CT | Cut Tape | 42,590 | 5 |
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Toshiba America Electronic Components RN2106,LF(CTTrans Digital BJT PNP 50V 0.1A 100mW 3-Pin SSM T/R Automotive AEC-Q101 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RN2106,LF(CT | 270 | 65 |
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Buy Now | ||||||
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RN2106,LF(CT | Tape & Reel | 16 Weeks | 3,000 |
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Buy Now | |||||
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RN2106,LF(CT | 8,952 |
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Buy Now | |||||||
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RN2106,LF(CT | Cut Tape | 85 | 5 |
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| RN2106,LF(CT | Tape & Reel | 85 | 100 |
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Toshiba America Electronic Components RN2106MFV,L3XHF(CTTransistor Digital BJT PNP 50V 100mA 3-Pin SOT-723 - Tape and Reel (Alt: RN2106MFV,L3XHF(CT) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RN2106MFV,L3XHF(CT | Tape & Reel | 36 Weeks | 8,000 |
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Get Quote | |||||
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RN2106MFV,L3XHF(CT | 15,652 |
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Buy Now | |||||||
Toshiba America Electronic Components RN2106,LXHF(CTTransistor Digital BJT PNP 50V 100mA 3-Pin SOT-416 - Tape and Reel (Alt: RN2106,LXHF(CT) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RN2106,LXHF(CT | Tape & Reel | 16 Weeks | 3,000 |
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Get Quote | |||||
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RN2106,LXHF(CT |
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Get Quote | ||||||||
RN2106 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: RN2101MFV~RN2106MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2101MFV, RN2102MFV, RN2103MFV RN2104MFV, RN2105MFV, RN2106MFV Unit: mm z Complementary to the RN1101MFV to RN1106MFV R1 (kΩ) R2 (kΩ) |
Original |
rn2101mfvrn2106mfvrn2102mfvrn2103mfv+4 | |
2106F
Abstract: RN1101FS RN1106FS RN2101FS RN2102FS RN2103FS RN2104FS RN2105FS RN2106FS ib20
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rn2101fsrn2106fsrn2102fsrn2103fs+6 | |
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Contextual Info: TOSHIBA RN2101F-RN2106F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2101F, RN2102F, RN2103F RN2104F, RN2105F, RN2106F Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • 1.6 ± 0.1 With Built-in Bias Resistors |
OCR Scan |
rn2101f-rn2106frn2101frn2102frn2103f+5 | |
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Contextual Info: RN2101~RN2106 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2101, RN2102, RN2103 RN2104, RN2105, RN2106 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Built-in bias resistors |
Original |
rn2101rn2106rn2102rn2103+4 | |
2106F
Abstract: RN2101FRN2106F RN2101F 2104F RN1101F RN1106F RN2102F RN2103F RN2104F RN2105F
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Original |
rn2101frn2106frn2102frn2103f+7 | |
TRANSISTOR MARKING YBContextual Info: RN2101FT~RN2106FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FT,RN2102FT,RN2103FT RN2104FT,RN2105FT,RN2106FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm |
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rn2101ftrn2106ftrn2102ftrn2103ft+5 | |
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Contextual Info: RN2101FT~RN2106FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FT,RN2102FT,RN2103FT RN2104FT,RN2105FT,RN2106FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm |
Original |
rn2101ftrn2106ftrn2102ftrn2103ft+4 | |
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Contextual Info: RN2101MFV~RN2106MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2101MFV,RN2102MFV,RN2103MFV RN2104MFV,RN2105MFV,RN2106MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 0.22 ± 0.05 0.32 ± 0.05 |
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rn2101mfvrn2106mfvrn2101mfvrn2102mfvrn2103mfv+5 | |
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Contextual Info: RN2101FS~RN2106FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FS,RN2102FS,RN2103FS RN2104FS,RN2105FS,RN2106FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.6±0.05 |
Original |
rn2101fsrn2106fsrn2102fsrn2103fs+4 | |
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Contextual Info: RN2101FT~RN2106FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FT,RN2102FT,RN2103FT RN2104FT,RN2105FT,RN2106FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm |
Original |
rn2101ftrn2106ftrn2102ftrn2103ft+4 | |
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Contextual Info: RN2101FV~RN2106FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2101FV,RN2102FV,RN2103FV RN2104FV,RN2105FV,RN2106FV Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications 0.22±0.05 Unit: mm 0.32±0.05 With built-in bias resistors |
Original |
rn2101fvrn2106fvrn2102fvrn2103fv+4 | |
RN2103FV
Abstract: RN2104FV RN2105FV RN2106FV RN1101FV RN1106FV RN2101FV RN2102FV
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Original |
rn2101fvrn2106fvrn2101fvrn2102fvrn2103fv+5 | |
2106F
Abstract: 2104F RN1101F RN1106F RN2101F RN2102F RN2103F RN2104F RN2105F RN2106F
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Original |
rn2101frn2106frn2101frn2102frn2103f+7 | |
RN1101FS
Abstract: RN1106FS RN2101FS RN2102FS RN2103FS RN2104FS RN2105FS RN2106FS
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rn2101fsrn2106fsrn2102fsrn2103fs+4 | |
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2106F
Abstract: 2104F RN2101F RN1101F RN1106F RN2102F RN2103F RN2104F RN2105F RN2106F
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Original |
rn2101frn2106frn2101frn2102frn2103f+7 | |
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Contextual Info: RN2101CT ~ RN2106CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101CT,RN2102CT,RN2103CT RN2104CT,RN2105CT,RN2106CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications |
Original |
rn2101ctrn2106ctrn2102ctrn2103ct+4 | |
RN1101FT
Abstract: RN2101FT RN2102FT RN2103FT RN2104FT RN2105FT RN2106FT
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Original |
rn2101ftrn2106ftrn2102ftrn2103ft+4 | |
RN1101MFV
Abstract: RN1106MFV RN2101MFV RN2102MFV RN2103MFV RN2104MFV RN2105MFV RN2106MFV
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Original |
rn2101mfvrn2106mfvrn2101mfvrn2102mfvrn2103mfv+5 | |
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Contextual Info: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: RN2106ACT Category: Transistors /Bipolar Small-Signal Transistors/Bias Resistor Built-in Transistors Single |
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rn2106actrn1106act16-apr-09 | |
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Contextual Info: RN2101~RN2106 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2101, RN2102, RN2103, RN2104, RN2105, RN2106 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Built-in bias resistors Simplified circuit design |
Original |
rn2101rn2106rn2102rn2103+4 | |
RN2101FT
Abstract: RN1101FT RN2102FT RN2103FT RN2104FT RN2105FT RN2106FT
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Original |
rn2101ftrn2106ftrn2102ftrn2103ft+4 | |
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Contextual Info: RN2101CT ~ RN2106CT 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2101CT,RN2102CT,RN2103CT RN2104CT,RN2105CT,RN2106CT ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 |
Original |
rn2101ctrn2106ctrn2102ctrn2103ct+4 | |
RN2102
Abstract: RN1101 RN2101 RN2103 RN2104 RN2105 RN2106
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Original |
rn2101rn2106rn2101rn2102rn2103+4 | |
RN1101
Abstract: RN1106 RN2001 RN2101 RN2102 RN2103 RN2104 RN2105 RN2106
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Original |
rn2101rn2106rn2101rn2102rn2103+6 | |