RN111 Search Results

1117F

Contextual Info: T O S H IB A RN1112F,RN1113F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS R •m N ■ 1117F 'm m m m m g R N 1 1 1 3 F■ m m m 'm m m m m tr SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors

ic 2113

Contextual Info: RN2112,2113 RN2112 U nit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • 1.6 ± 0.2 03 With. Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and M anufacturing Process Complementary to RN1112, RN1113

103 SSM MARKING

Contextual Info: RN1112,1113 RN1112 U nit in mm S W IT C H IN G , IN V E R T E R C IR C U IT , IN T E R F A C E C IR C U IT A N D D R IV E R C IR C U IT A P P L IC A T IO N S . • • • • 0.8 ± 0.1 W ith Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and M anufacturing Process

Contextual Info: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: RN1118MFV Category: Transistors /Bipolar Small-Signal Transistors/Bias Resistor Built-in Transistors Single

Contextual Info: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: RN1112CT Category: Transistors /Bipolar Small-Signal Transistors/Bias Resistor Built-in Transistors Single

RN1112

Abstract: RN1113 RN2112 RN2113
Contextual Info: RN1112,RN1113 シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) 東芝トランジスタ RN1112,RN1113 ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm

RN1112FT

Abstract: RN1113FT RN2112FT RN2113FT
Contextual Info: RN1112FT,RN1113FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1112FT,RN1113FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin

RN1112F

Abstract: RN1113F RN2112F RN2113F
Contextual Info: RN1112F,RN1113F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1112F,RN1113F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

Contextual Info: RN1112F,RN1113F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1112F,RN1113F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process

Contextual Info: RN1112MFV,RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1112MFV, RN1113MFV Unit: mm 1.2 ± 0.05 A wide range of resistor values is available for use in various circuits. z Complementary to the RN2112MFV and RN2113MFV

Contextual Info: RN1110CT, RN1111CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1110CT, RN1111CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 0.65±0.02

Contextual Info: RN1112CT,RN1113CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1112CT, RN1113CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 0.65±0.02

RN1110MFV

Abstract: RN1111MFV RN2110MFV RN2111MFV
Contextual Info: RN1110MFV,RN1111MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1110MFV,RN1111MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 0.22 ± 0.05 0.32 ± 0.05 0.80 ± 0.05 0.4 0.8 ± 0.05 1 1 0.4 A wide range of resistor values is available for use in various circuits.

RN1112FS

Abstract: RN1113FS RN2112FS RN2113FS
Contextual Info: RN1112FS,RN1113FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1112FS, RN1113FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • 0.6±0.05 Reducing the parts count enables the manufacture of ever more

RN1114

Abstract: RN1115 RN1116 RN1117 RN1118 RN2114
Contextual Info: RN1114~RN1118 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1114, RN1115, RN1116, RN1117, RN1118 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors. z Simplified circuit design

Contextual Info: RN1112CT,RN1113CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1112CT,RN1113CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications • Unit: mm

Contextual Info: RN1119MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1119MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 0.32±0.05 1.2±0.05 0.4 0.8±0.05 1 0.4 With built-in bias resistors

Contextual Info: RN1110CT, RN1111CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1110CT,RN1111CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications • Unit: mm

Contextual Info: RN1112ACT, RN1113ACT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1112ACT,RN1113ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications • •

Contextual Info: RN1110FS,RN1111FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1110FS, RN1111FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.6±0.05 • Complementary to RN2110FS, RN2111FS

Contextual Info: RN1114FT~RN1118FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1114FT, RN1115FT, RN1116FT, RN1117FT, RN1118FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z Built-in bias resistors z Enabling simplified circuit design

Contextual Info: RN1110F,RN1111F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1110F,RN1111F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process

Contextual Info: RN1112,RN1113 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1112, RN1113 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm With built-in bias resistors Simplified circuit design Reduced number of parts and simplified process

RN2110FV

Abstract: RN1110FV
Contextual Info: RN1110FV,RN1111FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1110FV, RN1111FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 0.22 ± 0.05 1.2 ± 0.05 Simplified circuit design 1 0.4 0.8 ± 0.05 Complementary to RN2110FV and RN2111FV