RN0807 Search Results

Contextual Info: SPI80N08S2-07R OptiMOS =Power-Transistor Product Summary Feature
N-Channel
Enhancement mode
175°C operating temperature VDS 75 V R DS on 7.3 m
ID 80 A P- TO262 -3-1
Avalanche rated
dv/dt rated
Integrated gate resistance for easy parallel connection

max5470

Abstract: Q67060-S7417
Contextual Info: Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 75 V RDS on 7.3 mΩ ID 80 A • Enhancement mode •=175°C operating temperature • Avalanche rated P-TO262-3-1 • dv/dt rated •=Integrated gate resistance for easy parallel connection

300W buck converter 60V OUTPUT

Abstract: S5830
Contextual Info: SPI80N08S2-07R OptiMOS
Power-Transistor Product Summary Feature
N-Channel
Enhancement mode
175°C operating temperature VDS 75 V R DS on 7.3 m
ID 80 A P- TO262 -3-1
Avalanche rated
dv/dt rated
Ideal for fast switching buck converter
Integrated gate resistance

s7417

Abstract: ANPS071E BSPI80N08S2-07R SPI80N08S2-07R Q67060-S7417
Contextual Info: SPI80N08S2-07R OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 75 V • Enhancement mode R DS on 7.3 mΩ ID 80 A • 175°C operating temperature • Avalanche rated P- TO262 -3-1 • dv/dt rated • Integrated gate resistance for easy parallel connection