RN EK Search Results

Contextual Info: RN-XV-EK-DS RN-XV-EK Evaluation Board Features • Evaluation board for the RN-XV module, which is based on Roving Networks’ robust RN-171 Wi-Fi module • Supports several antenna options, depending on the RN-XV module selected • WPS pushbutton for easy configuration

Contextual Info: RN-4142-EK-UG RN-41-EK & RN-42-EK Evaluation Kit User’s Guide 2012 Roving Networks. All rights reserved. RN-4142-EK-UG Version 1.0 12/10/12 Copyright © 2012 Roving Networks. All rights reserved. Roving Networks is a registered trademark of Roving Networks. Apple Inc., iPhone, iPad,

rn52

Contextual Info: RN-52-EK-UG RN-52-EK Evaluation Kit User’s Guide 2013 Roving Networks. All rights reserved. RN-52-EK-UG Version 1.0 1/27/13 Copyright © 2013 Roving Networks. All rights reserved. Roving Networks is a registered trademark of Roving Networks. Apple Inc., iPhone, iPad,

KDS 20 Mhz clock

Abstract: apple iphone 5 microprocessor Uart WiFi iphone battery KDS 40 Mhz clock iphone 5 usb cable 30 pin connector iphone iphone 4 android usb connect ipad apple
Contextual Info: RN -17 1-E K-DS RN-171-EK Evaluation Board Features • Ultra-low power: 4-uA sleep, 40-mA Rx, 180-mA Tx at 10 dBm • Configurable transmit power: 0 to +12 dBm • UART hardware interfaces and SPI slave • Up to 1 Mbps data rate over UART • Powered by battery pack 2 AAA batteries or via

Contextual Info: MICMNUW«EKNOI ^ecMuwr twm I «v.| MWW I 0 f t M L - l M I I I M M N M 1 l A i 1U M 0k 1 . . L ME T R I C DO NOT SCALE rn rn m m m I T H JR 0 ANG LE

lJ01

Contextual Info: 4 Internal P r o c e s s o r R e g is te r s This section describes the in te rn a l processor registers of the 21064A microprocessor. The section is organized as follows: • Ibox and Abox In t e rn a l Processor Registers • PAL_TEM P Registers • Lock Registers

MF163

Abstract: FUNKAMATEUR-Bauelementeinformation Funkamateur Manifer doppellochkern Scans-048 ferritkerne
Contextual Info: FUNKAMATEUR-Bauelementeinformation R in g k e rn e Ferritkerne D o p p e llo c h k e rn e Hersteller: V E B K eram ische W e rke Herm sdorf T G L 24724/- Eigenschaften der Manifer-W erkstoffe5 O A llg em ein es W erkstoff M anifer' Anfangsperm eabilität M, B < 1 mT

Contextual Info: K 0 A KAOHSIUNG J L ru 3bE in ] D 5imbDaE RATING t fr Os C n H K I9 DIMENSION m m CIRCU ITS CONSTRUCTION B CIRCUIT SYMBOL NUMBER OF PINS S 4 -1 6 3 -1 6 Ri » CIRCUIT CONSTRUCTION I TYPE DESIGNATION Rz R s ?.Rn: i 2 3 R i = R 2=- R 4 •n+l Rn-i Ri?

BB105

Abstract: BB105A bb105g WARIKAP diody SOD-23 PD2824 ce37 ma373 BB105A/B
Contextual Info: WARIKAP ¥ BB105A, BB105G SWW 1156-151 D iody k rz em o w e e p ip la n a rn e o z m ien n ej pojem n o sci p rz ez n ac zo n e do p ra c y w u k la d z ie glow icy U H F w o d b io rn ik a c h tele w iz y jn y c h i rad io w y ch . 1 3 tf m a x 0,5 max2,5

BF196

Abstract: tewa BF 196 tranzystor C12e3
Contextual Info: n-p-n TRANZYSTOR *• BF196 17 - 74/2 SWW 1156-213 T ra n z y s to r k rz em o w y p la n a rn y m ale j m ocy w ie lk ie j czçstotliw oàci. J e s t przezn aczo n y do sto so w an ia w sto p n iu re g u la c y jn y m w z m acn iacza p o sre d n iej czçstotliw osci w izji, od b io rn ik ó w

BC313

Abstract: BC211 tranzystor A 21E J BC313 2BC313 TEWA
Contextual Info: TRANZYSTOR * BC313 7 - 74/2 p-n-p SWW 1156-221 T ra n z y sto r k rz em o w y e p ip la n a rn y sre d n ie j m ocy m aiej czqstotliw oici. J e s t p rzezn aczo n y do sto so w an ia : — w sto p n iac h ste ru j^ c y c h o d c h y la n ia poziom ego o d b io rn ik o w tele w iz y jn y c h

BF173

Abstract: TEWA tranzystor ne 1374 BF 173
Contextual Info: TRANZYSTOR BF173 n-p-n SWW 1156-213 T ra n z y sto r k rz em o w y e p ip la n a rn y m aie j m ocy w ielk ie] czQstotliwosci. J e s t p rzezn aczo n y do sto so w a n ia w sto p n ia c h w y jsc io w ych w zm acn iaczy p o sre d n ie j cz^stotliw osci w iz ji odb io rn ik ó w tele w izy jn y ch .

BFP173

Abstract: BFP179 c 2274 t448
Contextual Info: 22 - 74/2 T R A N Z Y S T O R n-p-n V BFP179 SWW 1156-223 T ra n z y sto r k rz em o w y p la n a rn y sre d n ie j mOcy w ie lk ie j cz^stotliw osci. J e s t p rzezn aczo n y do sto so w an ia w sto p n iac h w y jsc io w ych o d b io rn ik ó w te le w iz ji k o lorow ej.

TFK 447

Contextual Info: » SAB 2010 'W Monolithisch integrierte Schaltung Monolithic Integrated circuit P -K anal MOS, Io n enim p lanta tion P -cha nnel MOS, ion im p la n ta tio n Anwendung: F e rn b e d ie n u n g fü r F a rb fe rn s e h e m p fä n g e r D e k o d ie rs c h a ltu n g fü r d e n U ltra s c h a ll- o d e r In fra ro t-E m p fä n g e r

AN-959B

Abstract: ircp250 IRCP450 ircp054 kdsi Lm 741
Contextual Info: APPLICATIO N NOTE 959B An Introduction to the HEXSense Current-Sensing Device HEXSense and H EXFET are tradem arks o f In te rn a tio n a l R ectifier by S. CLEMENTE, H. ISH II, S. YOUNG HEXSense “C” Series Current-Sensing Power MOSFETS Introduction

Contextual Info: TOSHIBA GATE TU RN -O FF THYRISTOR SEMICONDUCTOR T O SH IB A TECHNICAL SG4000JX26 DATA LOW SNUBBER TYPE SG4000JX26 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage : Vdrjv[ = 6000V (Note 1) R.M.S On-State Current : I t (RM S) —1600A (Tf=75°C)

w636

Abstract: 7V65 7A17C OBP16 SA 537 7816A
Contextual Info: 6481~6481}@ /A@<:<@7B3 >39/D 4IFSTQIR Z Rn[fbgZmnk^ Znmhfhmbo^ k^eZr Z Spbg l^iZkZm^ lrlm^fl .Spbg o^klbhg/ Rbg`e^ Spbg Z Sa^ k^_ehp lhe]^kbg` o^klbhg .hi^g o^gm ahe^/ ZoZbeZ[e^ .HFJC2S/ @WPKGFL /PPLKGFSKONR Z QhHR - EKU \hfiebZgm C^gmkZe ]hhk eh\d1 Agmb2ma^_m eh\d1 Ohp^k ]hhkl - pbg]hpl1

modelsim 6.3f

Abstract: ekp 71 set_net_delay micron ddr3 POS-PHY ATM format EP2AGX125 EP2AGX190 EP2AGX45 EP2AGX65 EP3CLS200
Contextual Info: Quartus II Software Release Notes RN-01048-1.0 July 2009 This document provides late-breaking information about the following areas of this version of the Altera Quartus®II software. For information about memory, disk space, system requirements, and device support in this version of the Quartus II software, along with the

EKM capacitors

Abstract: xbt n 200 IFD-53010
Contextual Info: w a rn H EW LETT l æ i PACKARD Silicon Bipolar MMIC 3.5 and 5.5 GHz Divide-by-4 Static Prescalers Technical Data 100 mil Stripline Package Features • Wide O perating Frequency Range: IPD-53010:0.15 to 5.5 GHz IFD-53110:0.15 to 3.5 GHz • Low Phase Noise:

Contextual Info: 06-Nilf-B? 05 : 9O; OI " f£ > u i EK.EE«> ~n o [£ > f£ > > A) rn A) L ) L ) U) -— i Ml Ml < .U < •— * m < l > £> i • — * IJJ < ( 111 ï> ï> mi A) 1 Z Uï H i > <) > i— H U) H A) ÍJ) -c III > 1II < _n (/) < A) II) 11! Ml C> — i Ml 1

2n3997

Abstract: 2N3996 9012 transistor Transistor 9012 ax 2n3999
Contextual Info: TYPES 2N3996, 2N3997, 2N3998, 2N3999 N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTORS FOR HIGH-SPEED POWER SWITCHING APPLICATIONS 3D CO H m C < < — rr* 2 rn £ to m m j • 30 W at 100°C Case Temperature ° ¡ z C/3 CO m 7 it -•Io yn 18 m tri n ? O N

GU-55

Abstract: 1l73 0447r
Contextual Info: r a rn r a N C i n d w t r e s b e l i e b t h e m m o n this □RNM NSTDK ISLIMLC. SMCETHETECHNICAL nramuCTDN a bven phee of d-wrgc. the user ANORBK. PD5ITmNC M3U5TRS3 ASSUUCS ND RE9PDNSnJTTPORRE5UU3 DBTM NEDOR EMPLOTS SUCH INFORMATION AT H 3 <MN DISCRETIDN

B114E

Contextual Info: Transistors Digital transistors built-in resistors DTB114EK/DTB114ES •F e a tu re s •E x te rn a l dim ensions (Units: mm) 1 ) B u ilt-in bias re s is to rs e n a b le the con figu ration of an inverter circu it 2.9±0.2 DTB114EK 1 1 + 0 -2 - 0,1 V9+0.2

rf 157

Contextual Info: Package outlines Package outlines and dimensions Sm artpack packages 4,25 "*i ^ ^ 24 MWHH 44 10 10 -M H 24 44 XT TT 1 H6 . 57 10 -es- K lH -87- C2 . 0,8 tzs. 10 I 113. C3 1.75 rn — 28 — èO 90 LÈ5 i=; 5! n o n o n o . i . o .n.o.n LJ LJ LJ LJ LJ 10 l -