RMJ CE Search Results

RMJ-K-S

Abstract: RMJ-J-R RSJ-K-R RMJ-K-R RSJ-J-S RSJ-J-R RMJ-J-S pitot sensor RMJ-T-R rsj-5
Contextual Info: Round Hole Panel Jacks Type RSJ Standard Size Type RMJ Miniature Size FRONT MOUNT HARDWARE INCLUDED ANSI color code shown To order IEC color code see pg. A-9 ALL MODELS AVAILABLE FOR FAST DELIVERY! 22.4 mm 0.88" Dia. Cutout Free Dust Cap and Nut Included

Contextual Info: HEF4082B DUAL 4-INPUT AND GATE The HEF4082B provides the positive dual 4-input AND function. The outputs are fully buffered for highest noise immunity and pattern insensitivity of output impedance. rMJ^jJTzUïïTJiôU^ Vqo O2 la 3 HEF4082B 11 11 I? I3 I5 ¡6

RREL 24 Relay

Abstract: RREL 20 Relay RK415 rril 24-15-RRIL rrmj RRIL-23 RK 0313 RRIG Rmj Relay
Contextual Info: ASEA Catalogue RK 41-2 E Instantaneous current and voltage relays type RRIL and RREL / For use in sho rt-circuit protections, earth-fault protections etc. frequently in com bination with tim e-lag relays • Are electrom agnetic load capacity ■ with high

sfc 4.5 ma

Contextual Info: P H I L IP S E C G INC 17E 0 • E C G 1133 TV SOUND IF DETECTOR semiconductors ,870 3 Stage D ifferential IF Am plifier . 19 - Phase Detector Ä lM iÄ li D C Operated Volum e Control ¿to A F A m plifier .240 Easily Adjustable with Ceramic Filter Ï Ï Ï Ï Ï Ï Ï Ï

Contextual Info: Sample & Buy Product Folder Support & Community Tools & Software Technical Documents DRV8801A-Q1 SLVSC79A – JUNE 2014 – REVISED SEPTEMBER 2014 DRV8801A-Q1 DMOS Full-Bridge Motor Drivers 1 Features 3 Description • • • • • • • • The DRV8801A-Q1 device provides a versatile

rrmj

Abstract: RMJ2 ASEA rrmj RMJ 2 ASEA rrmj relay rrm ASEA rrmj4 RM1S asea relay RI Rmj Relay
Contextual Info: ,.|.vs IN S T A N T A N E O U S CURRENT AND V O L T A G E RELAYS <36934] The A S E A instantaneous over-current, under-current, over-volt age and under-voltage re la y s , designated K M J and R R M J, arc of the electromagnetic type and designed' for either direct current or alternating current. They are

Contextual Info: / = 7 SGS-THOM SOil BUTW92 HIGH CURRENT NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR APPLICATIONS: . MOTOR CONTROL . HIGH FREQUENCY AND EFFICIENCY CONVERTERS DESCRIPTION High current, high speed transistor suited for power conversion applications, high efficency

RMJ BH

Abstract: SKIIP2* CASE
Contextual Info: s e MIKRO n SKiiP 262 GPL 060 - 452 W T 12 Absolute Maximum Ratings Symbol | Conditions1* IGBT & Inverse Diode V ces V c c 101 lc iCM T j 3' Visol 41 If I fm I fsm l2t Diode) Driver Vsi V s 2 9* dv/dt Top, Tstg Operating DC link voltage Theatsink - 25 °C

BPW 64 photo

Abstract: PHOTOVOLTAIC CELL Fotodiode BPW24 "PHOTOVOLTAIC CELL" BPW 64 photo diode BPW 64 photovoltaic A1183 Din 5033
Contextual Info: Silizium-Foto-PIN-Diode Silicon Photo PIN Diode Anwendung: Ultra-schneller Foto-Detektor Application: Ultra high speed photo-detector Besondere Merkmale: Features: • Kurze Ansprechzeiten bei kleinen Spannungen • Fast response times at low operating voltages

41 BTJ

Abstract: BFJ 49 marking code AYJ td 1410 85L1 bfj 47 WL 431 P4SMA10A P4SMA11 P4SMA11A
Contextual Info: TAIWAN SEMICONDUCTOR P4SMA SERIES 400 Watts Surface Mount Transient Voltage Suppressor SM A/DO-214AC ¿i COMPLIANCE RoHS ca;iK! y.K'.i.ii] Features •‘r F o r s u rfa c e b o a rd <> L o w m o u n te d a p p lic a tio n In o r d o r to p ro tlle G le B S

MURATA CDA 5.5 MHZ

Abstract: CDA 5,5 MC FT-707 MURATA CDA 5.5 MC CDA 4.5 mc CDA MC murata cda sfc 4.5 ma 0-12V ECG1133
Contextual Info: PHILIPS E C G INC 17E 0 • bbSBTSfl 00041BÛ G ■ 7 ^ 7 7 * 0 7 - 6 7 E C G 1133 TV SOUND IF DETECTOR semiconductors ,870 3 Stage Differential IF Amplifier .»IS - Phase Detector AA&&AÂÂÂ DC Operated Volume Control .2 *0 A F Am plifier 77mm E a sily A djusta ble with C e ram ic Filter

mi cj

Abstract: CPT30135 CPT30140 CPT30145
Contextual Info: Schottky PowerMod CPT30135 - CPT30145 ¥ Dim. Inches Min. Baseplate A=Common Anode V U l- 1 1 H h 1 / -1 - 1 \ ! Baseplate Common Cathode F / u \ — , r l~ 1 l _ ° N <= | N ° Baseplate D=Doubler A B C E F G H N Q R U V W M illim eters Max. Max. Min.

TDM30002

Abstract: TDM30004 TDM30006 TDM30008 TDM30010 TDM30012 TDM30014 TDM30016 DM-300
Contextual Info: Twin Diode Module rDM300 ¥ Baseplate A=Common Anode V -» Baseplate Common Cathode r °N | N ° H *"1 ! L i H h ♦ Í -1 J c 1 M ! Baseplate D=Doubler Dim . Inches Max. Min. A B C D E F G H J K L M _ 4.600 1.260 .925 1.240 - 3.99 BSC 1.98 BSC 0.320

Contextual Info: 2J0Amp SCHOTTKY D a ta Sheet BARRIER RECTIFIERS Semiconductor Mechanical Dimensions 1^ 4 .06/4 .60^ s 4E Cathode _ Package “SMB I3.30/3.90 h-s.io/5/58^ .11/.30 1 .65/2 .191- •! 1 .91/2.4 .01/. 20 1 .90/ 2.15 Featwes • EXTREMELY LOW V F ■ M AJORITY CARRIER CONDUCTION

Contextual Info: F l 7.5 Amp SCHOTTKY BARRIER RECTIFIERS D a ta Sheet Semiconductor Description Mechanical Dimensions m Features • HIGH CURREHT CAPABILITY WITH LOW V F ■ HIGH SURGE VOLTAGE AND TRANSIENT PROTECTION ■ SUPERIOR M ETAL PROCESS ■ M EETS UL SPECIFICATION 94V-0

Contextual Info: 35 Amp PLASTIC SILICON AUTOMOTIVE RECTIFIERS D a ta Sheet Semiconductor Mechanical Dimensions Description Q Leads 1.00typ. ,05Dia. m m m Features • LOW COST ■ LOW LEAKAGE CURRENT ■ HIGH SURGE CAPABILITY ■ HIGH TEMPERATURE CAPABILITY ■ DIFFUSED JUNCTION

BCP54

Abstract: BCP51 BCP52 BCP53 BCP54-10 BCP54-16 BCP55 BCP56
Contextual Info: • bbSB^Bl 0Q24551 AIT B A P X N AMER PHILIPS/DISCRETE b?E D JV. BCP54 BCP55 BCP56 SILICON PLANAR EPITAXIAL TRANSISTORS M edium p ow er npn transistors in a m inia tu re plastic envelope intended fo r applications in th ic k and th in -film circuits. T h e y are general purpose transistors, p rim a rily designed fo r audio a m p lifie r o u tp u t

Contextual Info: S E M IC O N D U C T O R tm 74F86 2-Input Exclusive-OR Gate General Description This device contains four independent gates, each of which performs the logic exclusive-OR function. Ordering Code: Commercial Package Package Description Number 74F86PC N14A 14-Lead 0.300" Wide Molded Dual-in-Line

BUK657-500B

Abstract: T0220AB transistor D 587
Contextual Info: N AMER PHILIPS/DISCRETE hTE D • ^53*131 00308^0 ESI « A P X Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

2T2 transistor

Abstract: BUK456 BUK456-200A BUK456-200B T0220AB PHILIPS 016
Contextual Info: PHILIPS INTERNATIONAL bSE T> m TUDfiEb OObHlEl 5^3 • PHIN Philips Semiconductors Product Specification BUK456-200A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: N ANER PHILIPS/DISCRETE fc.'lE D bbSBTBl DQBDafciD SHI * A P X Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. FREDFET with fast recovery

circuit diagram for samsung lcd

Abstract: ks531 IC mark A09 lcd circuit diagram for samsung digital alarm watch circuit
Contextual Info: SAMSUNG SE MI CO ND UCTOR INC 05 KS5184 D E j 7 ^ 4 1 4 5 aD0Sb7a fi | D. CMOS DIGITAL INTEGRATED CIRCUIT 6 FUNCTION 6 DIGIT ALARM WATCH WITH CHIME FOR DUPLEXED LCD The KS5184 is a CMOS 6 function watch circuit with alarm function and chime; designed to use with 6 Digit duplexed liquid crystal display with

BFJ 64

Abstract: p4sma75a
Contextual Info: P4SMA SERIES creat by art 400 Watts Suface Mount Transient Voltage Suppressor SMA/DO-214AC Pb RoHS COMPLIANCE Features — For surface mounted application in order to optimize board space — Low profile package — Built-in strain relief — Glass passivated junction

P4SMA10

Abstract: P4SMA10A P4SMA11 P4SMA11A P4SMA12 P4SMA12A P4SMA200A
Contextual Info: P4SMA SERIES creat by art 400 Watts Suface Mount Transient Voltage Suppressor SMA/DO-214AC Pb RoHS COMPLIANCE Features — UL Recognized File # E-326243 — For surface mounted application in order to optimize board space — Low profile package — Built-in strain relief