RM100 Search Results

S1WB60

Abstract: SIWB RBV-1506 S1WB(A)60B 100C RBV-2506 RBV-602L RBV-604 RBV-606 RBV-606H
Contextual Info: - fé Wì £ tfc « PRSM CkW RBV-602L BBV-604 RBV-606 RBV-606H RBV-608 RBV-1506 RBV-2506 RM30TB-H RM30TB-M RM30TC-24 RM30TC-2H RM75TC-24 RM75TC-2H RM75TC-H RM75TC-M RM100D2Z—40 S1NB20 S1NB60 S1RBA10 S1RBA20 S1RBA20Z S1RBA40 S1RBA40Z S1RBA60 S1RBA80 S1VB20

Contextual Info: MITSUBISHI DIODE MODULES RM100DZ/CZ-M,-H HIGH POWER GENERAL USE INSULATED TYPE RM100DZ/CZ-M,-H • lF AV • VRRM Average forward current.100A Repetitive peak reverse voltage 400/800V • DOUBLE A R M S • Insulated Type • UL Recognized Yellow Card No. E80276 <N)

Contextual Info: MITSUBISHI DIODE MODULES RM100D2Z-40 HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE RM100D2Z-40 Average forward current. 1 0 0 A Repetitive peak reverse voltage 2000V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 N

Contextual Info: MITSUBISHI DIODE MODULES RM100DZ/CZ-M,-H HIGH POWER GENERAL USE INSULATED TYPE RM1 OODZ/CZ-M,-H Average forward current 100A Repetitive peak reverse voltage . 400/800V DOUBLE ARMS Insulated Type UL Recognized Yellow Card No. E80276 N File No. E80271

rm-1005

Abstract: RM1005 M55342K03
Contextual Info: State of the Art, Inc. Thick Film Chip Resistor GLASS PASSIVATION M55342/03 RM1005 WRAPAROUND TERMINATIONS RESISTOR FILM 96% ALUMINA CHIP PERFORMANCE POWER DISSIPATION CURRENT NOISE CHARACTERISTICS* M K TESTS TCR -55 to +125 °C in ppm/°C Thermal Shock

E80276

Contextual Info: MITSUBISHI DIODE MODULES RM100DZ/CZ-24,-2H HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE RM100DZ/CZ-24,-2H • IF AV • VRRM Average forward current . 100A Repetitive peak reverse voltage .1200/1600V • DOUBLE ARMS • Insulated Type

Contextual Info: M ITSUBISHI DIODE MODULES RM100SZ-6S,-6R MEDIUM POWER GENERAL USE NON-INSULATED TYPE RM 10 0 SZ-6 S.6 R • lF AV • V rrm Average forward current.100A Repetitive peak reverse voltage 300V • TRIPLE ARMS • IMon-Insulated Type APPLICATION Welders

S2000K

Abstract: E80276 RM100D2Z-40 bl 2030
Contextual Info: RM 100D 2Z-40 &Œ B RM100D2Z -4 0 • If av 100A • Vrrm b°—ÿmfèLxËW Œ .2000V • yy'ji'T-M, • m im • U L IS Æ ^ ffl Yellow Card No ; E80276 (N) File No ; E80271 & ^cD flfeH Sftü ifésaig g ïE ^ Vrrm Vrsm

SIWB

Abstract: btb 137 RBV-1506 S1RBA40 S1WB(A)60B S1WB60 100C RBV-2506 RBV-602L RBV-604
Contextual Info: - fé Wì £ tfc « PRSM CkW RBV-602L BBV-604 RBV-606 RBV-606H RBV-608 RBV-1506 RBV-2506 RM30TB-H RM30TB-M RM30TC-24 RM30TC-2H RM75TC-24 RM75TC-2H RM75TC-H RM75TC-M RM100D2Z—40 S1NB20 S1NB60 S1RBA10 S1RBA20 S1RBA20Z S1RBA40 S1RBA40Z S1RBA60 S1RBA80 S1VB20

Contextual Info: MITSUBISHI DIODE MODULES RM100D2Z-40 HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE RM100D2Z-40 Average forward current 100A Repetitive peak reverse voltage . 2000V DOUBLE ARMS Insulated Type UL Recognized Yellow Card No. E80276 N

VR300

Abstract: RM100HA-XXF E80276
Contextual Info: MITSUBISHI FAST RECOVERY DIODE MODULES RM100HA-XXF HIGH SPEED SWITCHING USE INSULATED TYPE RM100HA-XXF • IDC • VRRM DC current . 100A Repetitive peak reverse voltage . 600/1000/1200V • trr Reverse recovery time . 0.8µs

E80276

Contextual Info: MITSUBISHI FAST RECOVERY DIODE MODULES RM100CA/C1A-XXF HIGH SPEED SWITCHING USE INSULATED TYPE RM100CA/C1A-XXF • IDC • VRRM DC current . 100A Repetitive peak reverse voltage . 600/800/1000/1200V • trr Reverse recovery time . 0.8µs

S1RBA-10

Abstract: S1RBA80 S1WB(A)60B SIWB RBV-1506 S1WB(A)60 S1WB60 100C RBV-2506 RBV-602L
Contextual Info: - fé Wì £ tfc « PRSM CkW RBV-602L BBV-604 RBV-606 RBV-606H RBV-608 RBV-1506 RBV-2506 RM30TB-H RM30TB-M RM30TC-24 RM30TC-2H RM75TC-24 RM75TC-2H RM75TC-H RM75TC-M RM100D2Z—40 S1NB20 S1NB60 S1RBA10 S1RBA20 S1RBA20Z S1RBA40 S1RBA40Z S1RBA60 S1RBA80 S1VB20

TABAI PL-2G

Abstract: tabai espec espec ess-630a rm100-48 tabai espec pl-2g lambda power supply RM100-48-2 Lambda instruction manual lambda a serie
Contextual Info: L a m b d a 's n ew R M S e rie s o f P o w er M odules are id e a lly d e s ig n e d f o r T e le c o m m u n ic a tio n s and N etw ork applications, w here high efficiency and low profile are critical. TECHNICAL DATA RM100-48 Series of Power Modules lambda Electronics inc. A

Contextual Info: MITSUBISHI DIODE MODULES RM100DZ/CZ-M,-H HIGH POWER GENERAL USE INSULATED TYPE RM100DZ/CZ-M,-H Average forward current . 100A Repetitive peak reverse voltage .400/800V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 N

Contextual Info: MITSUBISHI DIODE MODULES RM100D2Z-40 HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE RM100D2Z-40 Average forward current . 100A Repetitive peak reverse voltage . 2000V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 N

rm1005

Abstract: rm-1005 M55342H
Contextual Info: State of the Art, Inc. PROTECTIVE ENCAPSULANT Thin Film Chip Resistor M55342/03 RM1005 PRECISION THIN FILM RESISTOR 99.6% ALUMINA CHIP WRAPAROUND TERMINATIONS PRETINNED PERFORMANCE CURRENT NOISE CHARACTERISTICS* H E TESTS TCR -55 to +125 °C in ppm/°C Thermal Shock

S1WB40

Abstract: SIWB S1VBA60 S1WB60 SIWB(A)10 s1vbs0 RBV-1506 S1RBA80 S1WB(A)60B 100C
Contextual Info: - fé Wì £ tfc « PRSM CkW RBV-602L BBV-604 RBV-606 RBV-606H RBV-608 RBV-1506 RBV-2506 RM30TB-H RM30TB-M RM30TC-24 RM30TC-2H RM75TC-24 RM75TC-2H RM75TC-H RM75TC-M RM100D2Z—40 S1NB20 S1NB60 S1RBA10 S1RBA20 S1RBA20Z S1RBA40 S1RBA40Z S1RBA60 S1RBA80 S1VB20

E80276

Contextual Info: 三菱半導体〈高速ダイオードモジュール〉 RM100CA/C1A-XXF 高速スイッチング用 絶縁形 RM100CA/C1A-XXF ¡IDC 直流電流 . 100A ¡VRRM ピーク繰返し逆電圧 . 600/800/1000/1200V ¡trr 逆回復時間 . 0.8µs

Contextual Info: < HIGH VOLTAGE DIODE MODULES > RM1000DC-66F HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Modules RM1000DC-66F       IF •································································· 2 x 1000A

Lucent Technologies RM1000.Series

Abstract: RM1000-Series RM1000-Series lucent technologies 162DPA CISPR22 CSA22 IEC1000-3-2 IEC1000-4-4 IEC1000-4-5 UL-1950
Contextual Info: Data Sheet June 1997 RM1000-Series Front-End Power Supplies: 85 Vac to 264 Vac Input; 48 Vdc to 56 Vdc Output; 1000 W Features • Universal input voltage ■ Power-factor correction meets IEC1000-3-2 requirements ■ Overvoltage and overcurrent protection

Contextual Info: MITSUBISHI HVDi MODULES Prepared by S. Iura Revision: 1.0 Approved by H. Yamaguchi : Apr. 2009 RM1000DC-66F HIGH POWER SWITCHING USE INSULATED TYPE HVDi High Voltage Diode Modules RM1000DC-66F N/A ● IF ……………………… 2 x 1000 A ● Vrrm ……………………

Contextual Info: MITSUBISHI DIODE MODULES RM100DZ/CZ-24,-2H HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE RM100DZ/CZ-24,-2H Average forward current . 100A Repetitive peak reverse voltage .1200/1600V • DOUBLE ARMS • Insulated Type • UL Recognized

RM100SZ-6S

Contextual Info: MITSUBISHI DIODE MODULES RM100SZ-6S,-6R MEDIUM POWER GENERAL USE NON-INSULATED TYPE RM100SZ-6S,6R • IF AV • VRRM Average forward current . 100A Repetitive peak reverse voltage . 300V • TRIPLE ARMS • Non-Insulated Type