RM 11B Search Results

RM1Z 05

Abstract: 11-Series RM1A
Contextual Info: Rectifier Diodes Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter I F (AV) (A) VRM (V) Type No. EM 2 EM 2A EM 2B RM 1Z RM 1 RM 1A RM 1B RM 1C RM 11A RM 11B RM 11C IFSM (A) Tj (°C) 50Hz Half-cycle Sinewave Single Shot Others IR (H)

Contextual Info: Rectifier Diodes Electrical Characteristics（Ta＝25℃） Absolute Maximum Ratings Parameter I F（ AV） （A） VRM （V） Type No. EM 2 EM 2A EM 2B RM 1Z RM 1 RM 1A RM 1B RM 1C RM 11A RM 11B RM 11C Tj （℃） IFSM （A） Tstg （℃） 50Hz Half-cycle Sinewave

engine control module seg np2

Abstract: tlu 115 tlu 011 CP15 CRC-32 CP12 CP14 l 83s 472 722 C3E 351 IBM powerpc 405 GPr 266MHz PROCESSOR
Contextual Info: Architecture Guide C-5e/C-3e NETWORK PROCESSOR SILICON REVISION B0 C5EC3EARCH-RM Rev 04 PRODUCTION Freescale Semiconductor, Inc., 2004. All rights reserved. Architecture Guide C-5e/C-3e Network Processor Silicon Revision B0 C5EC3EARCH-RM Rev 04 How to Reach Us:

tlu 011

Abstract: CP12 CP14 CP15 CRC-32 4000 SERIES MOTOROLA land dpu 230 RX10B
Contextual Info: Architecture Guide C-5e/C-3e NETWORK PROCESSOR SILICON REVISION B0 C5EC3EARCH-RM Rev 04 PRODUCTION Architecture Guide C-5e/C-3e Network Processor Silicon Revision B0 C5EC3EARCH-RM Rev 04 Copyright 2004 Motorola, Inc. All rights reserved. No part of this documentation may

AL413

Abstract: AL415 MS3106A-14S-6S PTIH-10-6P 8200 shunt honeywell dl MS3102E-14S-6P AL417 Sensotec shunt 8200
Contextual Info: Model RM Rod End In-line Tension Load Cell DESCRIPTION Model RM, with male threads, is a high output rod end load cell The optional high output signal offers resistance to electrical designed to be mounted inline to the load axis to measure ten- noise as well as additional signal resolution. Additional options

Contextual Info: 4-1 Rectifier Diodes ●Surface-Mount V RM V 200 400 IF (AV) (A) Values in parentheses are for the products with heatsinks Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (µA) VR=V RM

am01 130.05

Contextual Info: 4-1 Rectifier Diodes ●Surface-Mount V RM V 200 400 IF (AV) (A) Values in parentheses are for the products with heatsinks Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (µA) VR=V RM

Contextual Info: 4-1 Rectifier Diodes ●Surface-Mount V RM V 200 400 IF (AV) (A) Values in parentheses are for the products with heatsinks Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (µA) VR=V RM

RM1Z

Contextual Info: 4-1 Rectifier Diodes ●Surface-Mount V RM V 200 400 IF (AV) (A) Values in parentheses are for the products with heatsinks Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (µA) VR=V RM

R02Z

Abstract: SG5T RM11C SANKEN
Contextual Info: iBBWiMiHSNieipeiBiie i IODES mm • RECTIFIER DIODES V rm lo IpSM Vf V) (A) (A) Max. @ lF (V) SFPM-52 200 SFPM-54 400 SFPM-62 200 SFPM-64 0.9 30 1.0 1.0 45 0.98 ¡R (A) Vrm lo Ifsm VF ,<V> (A) (A) Max. @ lF Type No. (H A ) Max. (V) RM4Y 100 200 RM 4Z 200

B-CDMB02-4MS

Contextual Info: 2. Schematic: Z 1 6 SHLD 3 "1 M '- l- f c : Sec. m m6 4 5 f 2 3 1 * TX RCV 3. Electrical Specification: @25° Is o la tio n : 1 5 0 0 V rm s 0 .5 m A 2Sec P ri to Sec Is o la tio n : 5 0 0 V rm s 0 .5 m A 2se c (TX to T urns R atio: 1CT: 1 ±2% 1 CT:2.5 ± 2 %

IR detector odti make

Abstract: Theta-JC QFP die down 7181 47 CHB 4U1 by 808 dfx PBS-2 CONNECTOR data sheet IC 7404 pml 017 38A IR receiver data sheet 51ED2
Contextual Info: PM P re lim in a r y In fo rm a tio n D a ta S h e e t • I PM C-960840 IS S U E 3 ^ 1 PM C-Sierra, Inc. # I PM 4388 TOCTL OCTAL T1 FRAMER FEATURES • Integrates eight T1 fra m e rs in a sin g le d evice fo r term inating duplex DS-1 signals. • S upports S F a nd E S F fo rm a t DS-1 signals.

Contextual Info: DP8344B DP8344B Biphase Communications Processor-BCP RM Literature Number: SNOSC22A DP8344B Biphase Communications Processor Features Transceiver Y Software configurable for 3270 3299 5250 and general 8-bit protocols Y Fully registered status and control

Sii 9573

Abstract: transistor 21Y S-8252 ed 7aa dude hx 630
Contextual Info: R O C K W E L L S E M I C O N D U C T O R S Y S T E M S access RS8250/1/2/3/4/5 ATM Physical Interface Devices - ATM PHY *Ü O ¥ ¡8 S N & B -, Rockwell September 1998 fô i S y s iiîs Preliminary Information This do cum e nt contains in fo rm a tio n on a pro du ct under developm ent. The param etric in fo rm a tio n contains target

TGS203

Abstract: Figaro TGS203 FIGARO ke 25 LV1011 FIC-5401 carbon monoxide ir sensor TGS 832 TCS2113 TGS 832 sensor acetone gas sensor
Contextual Info: TECHNICAL INFO RM ATIO N FOR TGS203 Technical in fo rm atio n for C arbon M o n o xid e Sensors T h c n u i k c t l n g o f T C S2D3 iia rL o d in s o m Leon d u cU v e ty pc c a rb o n m o m v ìd o s c u s a r foaLur¡n g It ig li S L 'k'clii'ily a n d s ta b ility .

TCD58

Abstract: tcd50 HT 25-19 transistor AN2613 power systems analysis, control and fault finding MPC5566RM 6126AN cwm 75 bb 160 TCD42 pt 2399 echo
Contextual Info: MPC5566 Microcontroller Reference Manual Devices Supported: MPC5566 MPC5566 RM Rev. 2.0 23 Apr 2008 How to Reach Us: Home Page: www.freescale.com E-mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370

1.5 128x128 CSTN LCD

Abstract: tft 128x128 1.6 TL0350 i8080 TL0350F1 128x128 Transflective LCD LCD 128x128 GT2016 M6800 1.5 128x128 Color LCD
Contextual Info: JEWEL HILL ELECTRONIC CO.,LTD. JEWEL HILL ELECTRONIC CO.,LTD. SPECIFICATIONS FOR LCD MODULE GT2016 Module No. Office Address: Rm. 518,5/F., 101 Shangbu Industrial District, HuaqiangNorthRoad, Shenzhen, China TEL : 86 -755-83362489 83617492 FAX: (86)-755-83286396

MPC5561

Abstract: mpc5554 ebi NV 15F MPC5500 freescale mpc5xxx JTAG header 14 BGA-16 MH 6211 IS0103 EL B17 MAC MTA E200
Contextual Info: MPC5561 Microcontroller Reference Manual Devices Supported: MPC5561 MPC5561 RM Rev. 2.0 30 May 2008 gggggggggggggggg How to Reach Us: Home Page: www.freescale.com E-mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370

Contextual Info: Advance Information Bt296 T h is d o c u m e n t c o n ta in s in fo rm a tio n o n a p ro d u c t u n d e r d e v e lo p m e n t. T h e p a ra m e tric in fo rm a tio n c o n ta in s ta rg e t p a r a m e te r s a n d is s u b je c t to c h a n g e . Distinguishing Features

N2907

Abstract: L2803
Contextual Info: uTECHNOLOGY rm FCRTURCS Maintains Constant Frequency at Low Output Currents Dual N-Channel MOSFET Synchronous Drive Programmable Fixed Frequency PLL Lockable Wide V|NRange: 3.5V to 36V Operation Low Minimum On-Time (<300ns) for High Frequency, Low Duty Cycle Applications

RBV-408

Abstract: RBV-608
Contextual Info: Rectifier Diodes is with Half-cycle Sinewave Heatsink Single Shot Mass (g) Fig. No. 40 –40 to +150 1.2 1.0 5 50 100 15 0.4 49 35 –40 to +150 0.97 1.0 20 100 100 17 0.3 48 EM 2B 1.2 80 –40 to +150 0.92 1.2 10 50 100 17 0.3 RM 11B 1.2 100 –40 to +150

MC6821 PIA

Abstract: telephone KEYPAD EM-95 SW TACT SPST
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MC34010 A d van ce In fo rm a tio n ELECTRONIC TELEPHONE CIRCUIT Provides A ll Basic Telephone S tation A pparatus Functions In a Single 1C, Including DTMF Dialer, Tone Ringer, Speech N etw ork and Line Voltage Regulator

Contextual Info: DEVELOPMENT DATA rm to This data sheet contains advance inform ation and specifications are subject to change w ith o u t notice. PCF86C410/610 FAMILY SINGLE-CHIP 8-BIT MICROCONTROLLER GENERAL DESCRIPTION The PCF86C410/610 fam ily o f microcontrollers is manufactured in an advanced CMOS technology.

FMM-24S, R

Abstract: AM01 AM01A AM01Z EM01 EM01A EM01Z FMM-22S FMM-24S FMM-26S
Contextual Info: 4-1 Rectifier Diodes ●Surface-Mount VRM V IF (AV) (A) Values in parentheses are for the products with heatsinks Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (µA) VR=V RM max