RLZ CE Search Results
RLZ CE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Zener Diode minimelf
Abstract: RLZ24 RLZ Series
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Original |
1000hrsds-221725zener diode minimelfrlz24+1 | |
red red green zener diode
Abstract: 5200B RLZ5232B LL34 RLZ5242B Brown Green zener diode RED Color band DIODES brown brown green zener diode RLZ5221B LL-34 diodes color yellow RLZ5240B
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OCR Scan |
5200bll-34rlz5221brlz5237b+13 | |
J27B
Abstract: 1N4148 SMD LL-34 1SS299 J36B RLZ27D J39C rlz5.1c RLZ9.1C 1N746 do-35 smd package J62B
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OCR Scan |
n52451n5245a1n5245b1n5246+16 | |
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Contextual Info: P4C150 ULTRA HIGH SPEED 1K X 4 RESETTABLE STATIC CMOS RAM x i- FEATURES • Full CMOS, 6T Cell ■ Single 5V ± 10% Power Supply ■ High Speed Equal Access and Cycle Times |
OCR Scan |
p4c15024-pin28-pinsmd-5962-88588+3 | |
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Contextual Info: P4C150 ULTRA HIGH SPEED 1K X 4 RESETTABLE STATIC CMOS RAM FEATURES Single 5V ± 10% Power Supply • Full CMOS, 6T Cell Separate Input and Output Ports ■ High Speed Equal Access and Cycle Times -10 /1 2 /1 5 /2 0 /2 5 ns (Commercial) -1 5 /2 0 /2 5 /3 5 ns (Military) |
OCR Scan |
p4c15024-pin28-pin96-bit | |
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Contextual Info: .025 [0.63] REF. 026 [0.66] .026 [0.66]- -,057±.008 [1 ,46±0.20] 120 [3.00] NOTES: 1 CAPACITANCE 1 0 0 0 h rs .): 2) CAP TOLERANCE: 3) DISSIPATION FACTOR: 4% 4) INSULATION RESISTANCE: 2 5 ‘C 1G0HM 5) 2 0 0 VDC RATED @ + 125"C 6) DIELECTRIC WITHSTANDING VOLTAGE: 7 0 0 VDC |
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4000pf | |
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Contextual Info: RAMALE] R 1 9 1 . 9 7 5 . 7 7 1 TECHNICAL COAXIAL CONNECTORS DATA ADAPTOR SMA 3 .5 H - HMS F r Issu e 9218 : Page SERIES. ADAPT MES 50 / 1 CHARACTERISTICS 50 o NOMINAL IMPEDANCE 0-2 FREQUENCY RANGE STANDARDISATION GHz -40/+90 *c TEMPERATURE RATING VSWR 1 . 07 Host |
OCR Scan |
315/flats9-apr-92 | |
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Contextual Info: RAMALE] R 1 9 1 . 9 7 5 . 7 7 1 TECHNICAL COAXIAL CONNECTORS DATA ADAPTOR SMA 3 .5 H - HMS F r Issu e 9218 : Page SERIES. ADAPT MES 50 / 1 CHARACTERISTICS 50 o NOMINAL IMPEDANCE 0-2 FREQUENCY RANGE STANDARDISATION GHz -40/+90 *c TEMPERATURE RATING VSWR 1 . 07 Host |
OCR Scan |
9-apr-92 | |
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Contextual Info: FUJI SU 256K X 8 CMOS SRAM MODULE MB85403A-40 MB85W3A-50 T S 2 6 1 -A 8 8 Y N o v . 1988 CMOS 262,144 Words x 8-Bit STATIC RANDOM ACCESS MEMORY MODULE The Fujitsu MB85403A is a fully decoded, CMOS static random access memory module consists of eight MB81C81A devices mounted on a 44-pin ceramic board. |
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mb85403a-40mb85w3a-50mb85403amb81c81a+4 | |
CQY78
Abstract: CQY77 CQY78 IV CQY77A DIN5033 BPW33 germanium photodiode PIN phototransistor 600 nm solar cell transistor infrared photodiode germanium
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bpw33cqy78cqy77cqy78 iv+6 | |
b414
Abstract: 74LVC245PW LVC245 74LVC245DB 7551 74LVC245 74LVC245D 74lvc245 Philips
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OCR Scan |
74lvc245711002bb41474lvc245pw+5 | |
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Contextual Info: 5 M U W DM©. High-Speed Parallel _> * . _• 4 ^ * First-In First Out Buffer Memories Q QS8201 512x9 QS8202 1Kx9 Advance Information FEATURES/BENEFITS First-In First-Out Dual Port RAM-based cell Asynchronous and Simultaneous Read and Write High Speed access 15 ns with zero fall-through time |
OCR Scan |
qs8201512x9qs8202mil-std-883+2 | |
Z8000
Abstract: z8000 manual
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OCR Scan |
z8030/z8530crc-16z8000z8030+3 | |
C 2335Contextual Info: File Number BUY69A, BUY69B, BUY69C 1237 High Voltage Silicon N-P-N Power Transistors TERM INAL D ESIG N A I lu N S For Horizontal-DefleCtion Circuits and Other High-Voltage Switching Applications Features: • Fast S w itching Speed ■ H igh Voltage Ratings: VCCx - 500-1000V |
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buy69abuy69bbuy69c00-1000v+2 | |
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Contextual Info: P4C150 ULTRA HIGH SPEED 1K x 4 RESETTABLE STATIC CMOS RAM SCRAM FEATURES • Full CMOS, 6T Cell ■ Three-State Outputs ■ High Speed (Equal Access and Cycle Times) -10/12/15/20/25 ns (Commercial) ■ Fully TTL Compatible Inputs and Outputs ■ Produced with PACE II Technology |
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p4c15024-pln096-bitmil-std-883d+3 | |
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Contextual Info: 57C4502-50/65/80 • Retransmit capability • Expandable in both width andjtepth • Increased noise immunity for XI - CMOS threshold • Functional and pin compatible with industry standard devices GENERAL DESCRIPTION This FIFO can accept data and output data asynchro |
OCR Scan |
57c4502-50/65/8057c4502 | |
6Cs smd
Abstract: smd 6CS SMD-5962-88588 sei smd resistors P4C147 P4C150 RS723
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OCR Scan |
p4c15024-pin28-pin096-bit+8 | |
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Contextual Info: P4C151 ULTRA HIGH SPEED 1K x 4 RESETTABLE CACHE-TAG STATIC CMOS RAM SCRAM x f - FEATURES • Single Power Supply - 5V ±10% ■ Full CMOS, 6T Cell ■ High Speed (Equal Access and Cycle Times) |
OCR Scan |
p4c151mil-std-883c-10pc-12pc+5 | |
RLS135
Abstract: 719d GE185 smd DA RN A223D DA228K
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OCR Scan |
ls4447ll-41te21crlr4001+6 | |
DA323U
Abstract: DA323 RB035B-40 DA223 RB031B-40 LS140 RB435 DA226U T106 DAN23SU DA228K
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OCR Scan |
ors4606ll-41rlr4001rlr4002+16 | |
PC902
Abstract: E64380 UAA 170 t225c rlz ce opic
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pc902e64380duty50y0uaa 170+3 | |
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Contextual Info: ADVANCE MT52C4K9A1/ 8K9B2 4K x 9, 8K x 9 FIFO I^ IIC R O N 4K x 9 ,8K x 9 FIFO FIFO FEATURES PIN ASSIGNMENT Top View V ery h ig h sp eed : 15, 20, 25 an d 35n s access H ig h -p e rfo rm a n ce, lo w -p o w er C M O S p ro cess Sin g le + 5 V ± 1 0 % su p p ly |
OCR Scan |
mt52c4k9a1/mt52c4k9a1/mt52c8k9b2 | |
marking g9cContextual Info: 3flE D MICRON TECHNOLOGY INC • IMRN talllSMI OOOBO^fl 5 ADVANCE t -H C -z 2K x 9 FIFO FIFO FEATURES PIN ASSIGNMENT Top View Very high speed: 15,20,25 and 35ns access High-performance, low-power CMOS process Single +5V ±10% supply Low power: 5mW typ. (standby); 350mW typ. (active) |
OCR Scan |
350mwt-46-35marking g9c | |
1S21
Abstract: P4C150
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OCR Scan |
p4c150-713mw24-pln096-bit+4 | |